JP2010258233A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2010258233A JP2010258233A JP2009106917A JP2009106917A JP2010258233A JP 2010258233 A JP2010258233 A JP 2010258233A JP 2009106917 A JP2009106917 A JP 2009106917A JP 2009106917 A JP2009106917 A JP 2009106917A JP 2010258233 A JP2010258233 A JP 2010258233A
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- semiconductor device
- temperature
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- thermistor element
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
【解決手段】半導体装置であって、金属接合部で基板に接合された半導体デバイスを備え、半導体デバイス周辺領域に温度に応じて電気抵抗の変化するサーミスタ素子160が設けられ、トランジスタ素子120の制御電極122に接続されている。接合部でクラックによる異常発熱があると、サーミスタ素子160の抵抗が変化しトランジスタ素子120の動作状態を制御できる。よって、異常温度時に半導体デバイスの動作を停止させることができる。
【選択図】図3
Description
Claims (5)
- 半導体デバイスと、該半導体デバイスを搭載する基板を備える半導体装置であって、
前記半導体デバイスは、金属接合部によって前記基板に接合されており、
前記半導体デバイスは、トランジスタ素子と、前記半導体デバイスの周辺領域に設けられ温度に応じて電気抵抗の変化するサーミスタ素子と、を備え、
前記トランジスタ素子の制御電極に、前記サーミスタ素子が接続されていることを特徴とする半導体装置。 - 請求項1に記載の半導体装置において、
前記サーミスタ素子は、温度上昇に応じて電気抵抗が低下する特性を備えることを特徴とする半導体装置。 - 請求項1又は請求項2に記載の半導体装置において、
前記サーミスタ素子は、前記トランジスタ素子のゲート電極又はベース電極と、ソース電極又はエミッタ電極との間に接続されていることを特徴とする半導体装置。 - 請求項1〜請求項3のいずれか一項に記載の半導体装置において、
前記半導体デバイスは、絶縁ゲートバイポーラ素子を備え、前記サーミスタ素子は、該絶縁ゲートバイポーラ素子の絶縁ゲート電極とエミッタ電極との間に接続されていることを特徴とする半導体装置。 - 請求項1〜請求項4のいずれか一項に記載の半導体装置において、
所定温度以上になると前記サーミスタ素子によって、前記トランジスタ素子の制御電極の電圧が、該トランジスタ素子の非動作電圧に制御されることを特徴とする半導体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009106917A JP5369868B2 (ja) | 2009-04-24 | 2009-04-24 | 半導体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009106917A JP5369868B2 (ja) | 2009-04-24 | 2009-04-24 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010258233A true JP2010258233A (ja) | 2010-11-11 |
JP5369868B2 JP5369868B2 (ja) | 2013-12-18 |
Family
ID=43318798
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2009106917A Expired - Fee Related JP5369868B2 (ja) | 2009-04-24 | 2009-04-24 | 半導体装置 |
Country Status (1)
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JP (1) | JP5369868B2 (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20140252072A1 (en) * | 2013-03-08 | 2014-09-11 | Hon Hai Precision Industry Co., Ltd. | Device for assembling photoelectric element on substrate |
KR20140140478A (ko) * | 2013-05-29 | 2014-12-09 | 미쓰비시덴키 가부시키가이샤 | 반도체장치 및 그 제조방법 |
JP2018116979A (ja) * | 2017-01-16 | 2018-07-26 | 株式会社豊田中央研究所 | 半導体装置 |
CN111834336A (zh) * | 2019-04-22 | 2020-10-27 | 珠海零边界集成电路有限公司 | 一种igbt芯片及其制备方法、ipm模块 |
JP2021526319A (ja) * | 2018-07-19 | 2021-09-30 | ミツビシ・エレクトリック・アールアンドディー・センター・ヨーロッパ・ビーヴィMitsubishi Electric R&D Centre Europe B.V. | パワー半導体モジュール、マスク、測定方法、コンピュータソフトウェア、及び記録媒体 |
KR102602641B1 (ko) * | 2023-02-15 | 2023-11-16 | (주)아인테크놀러지 | 기판 크랙 검사장치 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05121736A (ja) * | 1991-10-28 | 1993-05-18 | Hitachi Ltd | 過温度遮断回路を内蔵した半導体装置 |
JP2000031290A (ja) * | 1998-07-10 | 2000-01-28 | Nissan Motor Co Ltd | 半導体装置 |
JP2008218611A (ja) * | 2007-03-02 | 2008-09-18 | Toyota Motor Corp | 半導体装置 |
JP2009059821A (ja) * | 2007-08-30 | 2009-03-19 | Toyota Motor Corp | 半導体装置 |
-
2009
- 2009-04-24 JP JP2009106917A patent/JP5369868B2/ja not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05121736A (ja) * | 1991-10-28 | 1993-05-18 | Hitachi Ltd | 過温度遮断回路を内蔵した半導体装置 |
JP2000031290A (ja) * | 1998-07-10 | 2000-01-28 | Nissan Motor Co Ltd | 半導体装置 |
JP2008218611A (ja) * | 2007-03-02 | 2008-09-18 | Toyota Motor Corp | 半導体装置 |
JP2009059821A (ja) * | 2007-08-30 | 2009-03-19 | Toyota Motor Corp | 半導体装置 |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20140252072A1 (en) * | 2013-03-08 | 2014-09-11 | Hon Hai Precision Industry Co., Ltd. | Device for assembling photoelectric element on substrate |
US9132513B2 (en) * | 2013-03-08 | 2015-09-15 | Hon Hai Precision Industry Co., Ltd. | Device for assembling photoelectric element on substrate |
KR20140140478A (ko) * | 2013-05-29 | 2014-12-09 | 미쓰비시덴키 가부시키가이샤 | 반도체장치 및 그 제조방법 |
JP2014232803A (ja) * | 2013-05-29 | 2014-12-11 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
US9240358B2 (en) | 2013-05-29 | 2016-01-19 | Mitsubishi Electric Corporation | Semiconductor device provided with temperature sensing diode and manufacturing method thereof |
KR101672689B1 (ko) | 2013-05-29 | 2016-11-04 | 미쓰비시덴키 가부시키가이샤 | 반도체장치 및 그 제조방법 |
JP2018116979A (ja) * | 2017-01-16 | 2018-07-26 | 株式会社豊田中央研究所 | 半導体装置 |
JP2021526319A (ja) * | 2018-07-19 | 2021-09-30 | ミツビシ・エレクトリック・アールアンドディー・センター・ヨーロッパ・ビーヴィMitsubishi Electric R&D Centre Europe B.V. | パワー半導体モジュール、マスク、測定方法、コンピュータソフトウェア、及び記録媒体 |
JP7101878B2 (ja) | 2018-07-19 | 2022-07-15 | ミツビシ・エレクトリック・アールアンドディー・センター・ヨーロッパ・ビーヴィ | パワー半導体モジュール、マスク、測定方法、コンピュータソフトウェア、及び記録媒体 |
CN111834336A (zh) * | 2019-04-22 | 2020-10-27 | 珠海零边界集成电路有限公司 | 一种igbt芯片及其制备方法、ipm模块 |
CN111834336B (zh) * | 2019-04-22 | 2022-02-11 | 珠海零边界集成电路有限公司 | 一种igbt芯片及其制备方法、ipm模块 |
KR102602641B1 (ko) * | 2023-02-15 | 2023-11-16 | (주)아인테크놀러지 | 기판 크랙 검사장치 |
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