JP2009252885A - 電力半導体装置 - Google Patents
電力半導体装置 Download PDFInfo
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Abstract
【解決手段】電力半導体素子4,5を搭載する第1フレーム部2aと対向する位置に載置された放熱板14を、制御用集積回路6が載置される第2フレーム部2cの下面部まで延伸し、その厚みが放熱板14の前記第1フレーム部2aと対向している部分より厚くし前記第2フレーム部2cと近接させた延伸部15を有している。
【選択図】図1
Description
(1)特許文献1記載の従来技術においては発熱部であるスイッチング素子と温度センサとの距離が比較的遠く、スイッチング素子で発生した熱が金属配線層及び良熱伝導層を介して温度センサに伝達するまで時間がかかるため、過熱状態の検出に時間的遅れが生じる。一般に半導体素子であるスイッチング素子が過熱状態になった場合は速やかにその駆動を停止させる必要があるため、前記時間的遅れは信頼性上問題となる。
(2)また、特許文献1記載の従来技術においては良熱伝導層を載置したりさらには放熱板に凹み加工を施す必要があり、工数、コストが増加する。
また、放熱板の延伸部はスイッチング素子や制御用集積回路とともにモールド樹脂内に封止されており、スイッチング素子で発生した熱の制御用集積回路への伝達経路が比較的短いため、スイッチング素子が過熱状態になった場合において速やかにその駆動を停止させることができる。
また、本発明の実現には放熱板の一部を延伸し延伸部とするだけでよく、追加の部材や切削加工などは必要でないため、工数やコストの増加を防ぐことができる。
この発明を実施するための実施の形態1における電力半導体装置について以下説明する。電力半導体装置の側面断面図を図1に示し、半導体素子搭載およびワイヤボンディング後の電力半導体装置における内部構成を示す平面図を図4に示す。
前記リードフレーム部2は、導電性、熱伝導性に優れた銅などの材質が用いられ、一枚板状の銅板をパンチングなどによって所定の形状に打ち抜かれると同時に、次の段落で説明する前記第1フレーム部2aの沈め加工が施される。さらに、前記第1フレーム部2a、前記第2フレーム部2cの一方主面およびボンディングワイヤ8が接続される所定のリードフレームのボンディング領域に銀などでメッキ処理が施される。
図2に本発明の実施の形態2における電力半導体装置の側面断面図を示す。なお、各図において実施の形態1と同一の構成には同一の符号を付し、重複する説明については省略する。
図3に本発明の実施の形態2における電力半導体装置の側面断面図を示す。なお、各図において実施の形態1、2と同一の構成には同一の符号を付し、重複する説明については省略する。
Claims (4)
- 電力半導体素子と、
前記電力半導体素子を制御するための制御用集積回路と、
前記電力半導体素子が一方主面に搭載される第1フレーム部、前記制御用集積回路が一方主面に搭載される第2フレーム部、前記第1フレーム部に接続される第1リード端子および前記第2フレーム部に接続される第2リード端子を有するリードフレーム部と、
前記電力半導体素子および前記制御用集積回路を含む前記リードフレーム部を封止するモールド樹脂と、
前記第1フレーム部の一方主面と反対側の他方主面と対向して配置される放熱板と、
を備え、
前記第1フレーム部は、前記第1リード端子とリード段差部を介して支持され、前記第2フレーム部と略平行かつ、前記第2フレーム部よりも前記モールド樹脂の外面に接近するように配置され、
前記放熱板は、前記第1フレーム部と対向する第1面と反対側の第2面を有し、前記第2面の少なくとも一部が前記モールド樹脂の外部に露出するとともに、少なくとも一部が前記第2フレーム部側に延伸している延伸部を有し、
前記延伸部の前記第2フレーム部と対向する面と、前記第2フレーム部の一方主面と反対側の他方主面との距離が、前記第1フレーム部の他方主面と前記放熱板の第1面との距離以下であり、
前記制御用集積回路には、温度を検出する感温素子が集積されることを特徴とする半導体装置。 - 電力半導体素子と、
前記電力半導体素子を制御するための制御用集積回路と、
前記電力半導体素子が一方主面に搭載される第1フレーム部、前記制御用集積回路が一方主面に搭載される第2フレーム部、前記第1フレーム部に接続される第1リード端子および前記第2フレーム部に接続される第2リード端子を有するリードフレーム部と、
前記電力半導体素子および前記制御用集積回路を含む前記リードフレーム部を封止するモールド樹脂と、
前記第1フレーム部の一方主面と反対側の他方主面と対向して配置される放熱板と、
を備え、
前記第1フレーム部は、前記第1リード端子とリード段差部を介して支持され、前記第2フレーム部と略平行かつ、前記第2フレーム部よりも前記モールド樹脂の外面に接近するように配置され、
前記放熱板は、前記第1フレーム部と対向する第1面と反対側の第2面を有し、前記第2面の少なくとも一部が前記モールド樹脂の外部に露出するとともに、少なくとも一部が前記第2フレーム部側に延伸している延伸部を有し、
前記延伸部上に温度センサをさらに設け、
前記温度センサは、検知した温度に応じた電気信号を前記制御用集積回路に出力することを特徴とする半導体装置。 - 前記延伸部の厚みは、前記放熱板の外部に露出している面から前記第1フレーム部の前記電力半導体素子が搭載されている面までの距離と略同一であることを特徴とする請求項2に記載の半導体装置。
- 前記延伸部の厚みは、前記放熱板の外部に露出している面から前記第2フレーム部の前記制御用集積回路が搭載されている面までの距離と略同一であることを特徴とする請求項2に記載の半導体装置。
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Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011199149A (ja) * | 2010-03-23 | 2011-10-06 | Sanken Electric Co Ltd | 半導体装置 |
JP2012212863A (ja) * | 2011-03-30 | 2012-11-01 | Internatl Rectifier Corp | 温度センサーを具えたデュアルコンパートメント半導体パッケージ |
CN102820288A (zh) * | 2011-06-10 | 2012-12-12 | 三菱电机株式会社 | 功率模块及其制造方法 |
KR101222831B1 (ko) | 2011-09-16 | 2013-01-15 | 삼성전기주식회사 | 전력 모듈 패키지 |
WO2013091141A1 (zh) * | 2011-12-21 | 2013-06-27 | 武汉飞恩微电子有限公司 | 功率器件封装结构及封装工艺 |
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US8637981B2 (en) | 2011-03-30 | 2014-01-28 | International Rectifier Corporation | Dual compartment semiconductor package with temperature sensor |
CN102820288A (zh) * | 2011-06-10 | 2012-12-12 | 三菱电机株式会社 | 功率模块及其制造方法 |
JP2012256803A (ja) * | 2011-06-10 | 2012-12-27 | Mitsubishi Electric Corp | パワーモジュールとその製造方法 |
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CN104011855A (zh) * | 2011-12-21 | 2014-08-27 | 武汉飞恩微电子有限公司 | 功率器件封装结构及封装工艺 |
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JP2014007203A (ja) * | 2012-06-21 | 2014-01-16 | Panasonic Corp | 実装基板およびその製造方法、ledモジュール |
US8970261B2 (en) | 2012-08-21 | 2015-03-03 | Mitsubishi Electric Corporation | Power module |
JP2014146751A (ja) * | 2013-01-30 | 2014-08-14 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
CN110676237A (zh) * | 2019-09-15 | 2020-01-10 | 天水华天电子集团股份有限公司 | 基于微小级别ssop封装的散热智能功率半导体模块及其制备方法与应用 |
US20230014718A1 (en) * | 2021-07-14 | 2023-01-19 | Texas Instruments Incorporated | Semiconductor package with temperature sensor |
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