JP2010245533A - 太陽電池用多層薄膜構造 - Google Patents
太陽電池用多層薄膜構造 Download PDFInfo
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- 239000010409 thin film Substances 0.000 title claims abstract description 104
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 239000010408 film Substances 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 5
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 2
- 239000010410 layer Substances 0.000 abstract description 83
- 230000000903 blocking effect Effects 0.000 abstract description 9
- 239000011247 coating layer Substances 0.000 abstract description 2
- 238000002834 transmittance Methods 0.000 description 19
- DQXBYHZEEUGOBF-UHFFFAOYSA-N but-3-enoic acid;ethene Chemical compound C=C.OC(=O)CC=C DQXBYHZEEUGOBF-UHFFFAOYSA-N 0.000 description 11
- 239000005038 ethylene vinyl acetate Substances 0.000 description 11
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 11
- 238000010248 power generation Methods 0.000 description 8
- 238000002845 discoloration Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000008033 biological extinction Effects 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 230000002087 whitening effect Effects 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- -1 Si 3 N 4 Inorganic materials 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Inorganic materials O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
- H01L31/0465—PV modules composed of a plurality of thin film solar cells deposited on the same substrate comprising particular structures for the electrical interconnection of adjacent PV cells in the module
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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- Condensed Matter Physics & Semiconductors (AREA)
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- Computer Hardware Design (AREA)
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Abstract
【解決手段】太陽電池素子を保護する透明基板上に複数の高屈折率薄膜層と低屈折率薄膜層とが交互にコーティングされてなる構造を有し、複数の低屈折率薄膜層のうちいずれかの層の膜厚が他の高屈折率薄膜層の膜厚よりも厚く、他の低屈折率薄膜層の膜厚よりも1.5倍以上厚く形成されることを特徴とする。
【選択図】図2
Description
110:透明基板
200:太陽電池用多層薄膜
300:太陽電池素子
310:緩衝部材
Claims (6)
- 透明基板上に複数の高屈折率薄膜層と低屈折率薄膜層とが交互にコーティングされてなる構造を有し、
前記複数の低屈折率薄膜層のうち最厚膜の低屈折率薄膜層の膜厚が前記全ての高屈折率薄膜層の膜厚よりも厚く、他の全ての低屈折率薄膜層の膜厚よりも1.5倍以上厚く形成されることを特徴とする太陽電池用多層薄膜構造。 - 前記最厚膜の低屈折率薄膜層の膜厚は150nm以上であることを特徴とする請求項1に記載の太陽電池用多層薄膜構造。
- 前記高屈折率薄膜層は、屈折率が2.0以上、2.4以下の薄膜層であることを特徴とする請求項1に記載の太陽電池用多層薄膜構造。
- 前記高屈折率薄膜層は、TiO2、Ta2O5、Ti2O3、Si3N4、Ti3O5、ZrO2、Nb2O5、DLC、またはDLCを含む物質のうちのいずれかで形成されることを特徴とする請求項3に記載の太陽電池用多層薄膜構造。
- 前記低屈折率薄膜層は、屈折率が1.38以上、1.46以下の薄膜層であることを特徴とする請求項1に記載の太陽電池用多層薄膜構造。
- 前記低屈折率薄膜層は、SiO2、MgF2、DLC、またはDLCを含む物質のうちのいずれかで形成されることを特徴とする請求項5に記載の太陽電池用多層薄膜構造。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020090028562A KR101149308B1 (ko) | 2009-04-02 | 2009-04-02 | 태양전지용 다층박막 구조 |
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JP2010245533A true JP2010245533A (ja) | 2010-10-28 |
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JP2010082192A Pending JP2010245533A (ja) | 2009-04-02 | 2010-03-31 | 太陽電池用多層薄膜構造 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20100252100A1 (ja) |
JP (1) | JP2010245533A (ja) |
KR (1) | KR101149308B1 (ja) |
CN (1) | CN101859805A (ja) |
DE (1) | DE102010003379A1 (ja) |
Cited By (1)
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---|---|---|---|---|
WO2016148119A1 (ja) * | 2015-03-18 | 2016-09-22 | 住友化学株式会社 | 反射板を有する光電変換素子 |
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US20120024362A1 (en) * | 2011-05-31 | 2012-02-02 | Primestar Solar, Inc. | Refractive index matching of thin film layers for photovoltaic devices and methods of their manufacture |
KR101283072B1 (ko) * | 2011-10-18 | 2013-07-05 | 엘지이노텍 주식회사 | 태양광 발전장치 및 이의 제조방법 |
CN103579389B (zh) * | 2012-07-30 | 2016-12-21 | 比亚迪股份有限公司 | 一种太阳能电池组件及其制备方法 |
WO2014146317A1 (zh) * | 2013-03-22 | 2014-09-25 | 韩华新能源(启东)有限公司 | 新型光伏组件 |
CN105185923A (zh) * | 2015-08-25 | 2015-12-23 | 张家港康得新光电材料有限公司 | 水汽阻隔膜及其制作方法、柔性显示器件及其制作方法 |
CN105824061B (zh) * | 2016-04-28 | 2018-01-02 | 西安应用光学研究所 | 一种氟化镁中波红外光学窗口高强度保护膜的膜系结构 |
TWI615988B (zh) * | 2016-08-01 | 2018-02-21 | 具有抗反射頻譜增加結構的光電元件 | |
CN110034197A (zh) * | 2018-01-10 | 2019-07-19 | 协鑫能源工程有限公司 | 光伏组件 |
TWI703725B (zh) * | 2019-08-28 | 2020-09-01 | 友達光電股份有限公司 | 顯示裝置 |
CN111477708A (zh) * | 2020-05-08 | 2020-07-31 | 北京金茂绿建科技有限公司 | 一种光伏组件用灰色前板玻璃及其制备的灰色光伏组件 |
CN114815004B (zh) * | 2022-05-20 | 2024-03-15 | 无锡泓瑞航天科技有限公司 | 一种红外金属化全通型蓝宝石窗片及其制备方法和应用 |
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- 2009-04-02 KR KR1020090028562A patent/KR101149308B1/ko not_active IP Right Cessation
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2010
- 2010-03-26 US US12/732,483 patent/US20100252100A1/en not_active Abandoned
- 2010-03-29 DE DE102010003379A patent/DE102010003379A1/de not_active Ceased
- 2010-03-30 CN CN201010140054A patent/CN101859805A/zh active Pending
- 2010-03-31 JP JP2010082192A patent/JP2010245533A/ja active Pending
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Publication number | Priority date | Publication date | Assignee | Title |
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WO2016148119A1 (ja) * | 2015-03-18 | 2016-09-22 | 住友化学株式会社 | 反射板を有する光電変換素子 |
JPWO2016148119A1 (ja) * | 2015-03-18 | 2017-12-28 | 住友化学株式会社 | 反射板を有する光電変換素子 |
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Publication number | Publication date |
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US20100252100A1 (en) | 2010-10-07 |
KR20100110140A (ko) | 2010-10-12 |
DE102010003379A1 (de) | 2010-11-25 |
CN101859805A (zh) | 2010-10-13 |
KR101149308B1 (ko) | 2012-05-24 |
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