JP2010178194A - 固体撮像装置 - Google Patents
固体撮像装置 Download PDFInfo
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- JP2010178194A JP2010178194A JP2009020457A JP2009020457A JP2010178194A JP 2010178194 A JP2010178194 A JP 2010178194A JP 2009020457 A JP2009020457 A JP 2009020457A JP 2009020457 A JP2009020457 A JP 2009020457A JP 2010178194 A JP2010178194 A JP 2010178194A
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- 238000003384 imaging method Methods 0.000 title claims abstract description 68
- 238000009825 accumulation Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76816—Output structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14806—Structural or functional details thereof
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/67—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
- H04N25/671—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction
- H04N25/672—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction between adjacent sensors or output registers for reading a single image
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/713—Transfer or readout registers; Split readout registers or multiple readout registers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Electromagnetism (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
【解決手段】撮像領域は、複数の画素列を含む。複数のユニットは、複数の画素列が配列された方向に配列されており、撮像領域からの電荷に基づく信号を生成する。各ユニットは出力レジスタ、増倍レジスタ及びアンプを有する。出力レジスタは、一以上の対応の画素列からの電荷を転送する。増倍レジスタは、出力レジスタからの電荷を受けて増倍された電荷を生成する。アンプは、増倍レジスタからの増倍された電荷に基づく信号を生成する。本固体撮像装置は、複数のユニットが設けられた領域と、当該領域の上記方向における両側に位置する第1のダミー領域と第2のダミー領域とを含んでる。第1のダミー領域と第2のダミー領域のそれぞれには、増倍レジスタ及びアンプが設けられている。
【選択図】図1
Description
18…出力レジスタ、18d…出力レジスタ(ダミー)、20…増倍レジスタ、20d…増倍レジスタ(ダミー)、22…アンプ、22d…アンプ(ダミー)、24…コーナーレジスタ、24d…コーナーレジスタ(ダミー)、OD…出力ドレイン端子、OG…出力ゲート端子、OS…出力ソース端子、RD…リセットドレイン端子、RG…リセットゲート端子、P1〜P3…端子、PDC…端子、PM1〜PM3…端子、R…領域、R1…第1のダミー領域、R2…第2のダミー領域。
Claims (1)
- マルチポート型の固体撮像装置であって、
複数の画素列を含む撮像領域と、
前記撮像領域からの電荷に基づく信号を生成する複数のユニットであって、前記複数の画素列が配列された方向に配列された該複数のユニットと、
を備え、
前記複数のユニットの各々は、
前記複数の画素列のうち一以上の対応の画素列からの電荷を転送する出力レジスタと、
前記出力レジスタからの電荷を受けて増倍された電荷を生成する増倍レジスタと、
前記増倍レジスタからの増倍された電荷に基づく信号を生成するアンプと、
を有しており、
該固体撮像装置は、
前記複数のユニットが設けられた領域と、該領域の前記方向における両側に位置する第1のダミー領域と第2のダミー領域と、を含み、
前記第1のダミー領域と前記第2のダミー領域のそれぞれに、増倍レジスタ及びアンプを備えている、
固体撮像装置。
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009020457A JP5237843B2 (ja) | 2009-01-30 | 2009-01-30 | 固体撮像装置 |
PCT/JP2010/050777 WO2010087278A1 (ja) | 2009-01-30 | 2010-01-22 | 固体撮像装置 |
EP10735747A EP2247099B1 (en) | 2009-01-30 | 2010-01-22 | Solid-state imaging device |
KR1020107015311A KR101178670B1 (ko) | 2009-01-30 | 2010-01-22 | 고체 촬상 장치 |
US12/920,142 US8367999B2 (en) | 2009-01-30 | 2010-01-22 | Solid state imaging device comprising dummy regions each containing a multiplication register and an amplifier |
AT10735747T ATE550874T1 (de) | 2009-01-30 | 2010-01-22 | Festkörperabbildungsvorrichtung |
CN2010800011468A CN101960837B (zh) | 2009-01-30 | 2010-01-22 | 固体摄像装置 |
TW099102275A TWI481257B (zh) | 2009-01-30 | 2010-01-27 | Solid state camera device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009020457A JP5237843B2 (ja) | 2009-01-30 | 2009-01-30 | 固体撮像装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010178194A true JP2010178194A (ja) | 2010-08-12 |
JP5237843B2 JP5237843B2 (ja) | 2013-07-17 |
Family
ID=42395540
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009020457A Active JP5237843B2 (ja) | 2009-01-30 | 2009-01-30 | 固体撮像装置 |
Country Status (8)
Country | Link |
---|---|
US (1) | US8367999B2 (ja) |
EP (1) | EP2247099B1 (ja) |
JP (1) | JP5237843B2 (ja) |
KR (1) | KR101178670B1 (ja) |
CN (1) | CN101960837B (ja) |
AT (1) | ATE550874T1 (ja) |
TW (1) | TWI481257B (ja) |
WO (1) | WO2010087278A1 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5330001B2 (ja) * | 2009-01-30 | 2013-10-30 | 浜松ホトニクス株式会社 | 固体撮像装置 |
US8773563B2 (en) | 2011-05-25 | 2014-07-08 | Truesense Imaging, Inc. | Multi-purpose architecture for CCD image sensors |
US8411189B2 (en) * | 2011-05-25 | 2013-04-02 | Truesense Imaging, Inc. | Multi-purpose architecture for CCD image sensors |
US8800130B2 (en) | 2011-05-25 | 2014-08-12 | Truesense Imaging, Inc. | Methods for producing image sensors having multi-purpose architecture |
CN104767945B (zh) * | 2015-04-14 | 2018-02-06 | 中国电子科技集团公司第四十四研究所 | 能提高emccd转移效率的驱动电路 |
CN106601767B (zh) * | 2016-12-02 | 2019-06-04 | 中国电子科技集团公司第四十四研究所 | 能缩减电极信号延迟的正照帧转移ccd |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09186937A (ja) * | 1995-12-27 | 1997-07-15 | Nec Corp | 固体撮像装置 |
JPH10304256A (ja) * | 1997-03-22 | 1998-11-13 | Eev Ltd | Ccdイメージャ |
JP2000299818A (ja) * | 1999-04-14 | 2000-10-24 | Nippon Hoso Kyokai <Nhk> | Ccd型撮像素子の駆動方法およびccd型撮像装置 |
JP2001119010A (ja) * | 1999-10-18 | 2001-04-27 | Nikon Corp | マルチ出力固体撮像装置 |
JP2006201044A (ja) * | 2005-01-21 | 2006-08-03 | Hitachi High-Technologies Corp | 欠陥検査方法及びその装置 |
Family Cites Families (20)
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GB8901200D0 (en) | 1989-01-19 | 1989-03-15 | Eev Ltd | Camera using imaging array |
KR100298039B1 (ko) * | 1991-07-11 | 2001-10-24 | 윌리엄 비. 켐플러 | 전하증배장치및그제조방법 |
US6278142B1 (en) * | 1999-08-30 | 2001-08-21 | Isetex, Inc | Semiconductor image intensifier |
JP5026641B2 (ja) | 2000-04-28 | 2012-09-12 | テキサス インスツルメンツ インコーポレイテッド | 固体撮像センサ |
GB2371403B (en) * | 2001-01-18 | 2005-07-27 | Marconi Applied Techn Ltd | Solid state imager arrangements |
US7420605B2 (en) * | 2001-01-18 | 2008-09-02 | E2V Technologies (Uk) Limited | Solid state imager arrangements |
US7190400B2 (en) * | 2001-06-04 | 2007-03-13 | Texas Instruments Incorporated | Charge multiplier with logarithmic dynamic range compression implemented in charge domain |
JP3689866B2 (ja) * | 2002-05-30 | 2005-08-31 | 日本テキサス・インスツルメンツ株式会社 | Cmd及びcmd搭載ccd装置 |
US6791858B2 (en) * | 2002-08-26 | 2004-09-14 | Micron Technology, Inc. | Power reduction in CMOS imagers by trimming of master current reference |
US20050029553A1 (en) * | 2003-08-04 | 2005-02-10 | Jaroslav Hynecek | Clocked barrier virtual phase charge coupled device image sensor |
GB2413007A (en) * | 2004-04-07 | 2005-10-12 | E2V Tech Uk Ltd | Multiplication register for amplifying signal charge |
CN100539650C (zh) * | 2004-07-20 | 2009-09-09 | 株式会社岛津制作所 | 固体摄像装置、摄像装置和摄像元件 |
JP4442608B2 (ja) | 2004-07-20 | 2010-03-31 | 株式会社島津製作所 | 固体撮像装置、撮像装置並びに撮像素子 |
GB0503827D0 (en) * | 2005-02-24 | 2005-04-06 | E2V Tech Uk Ltd | Enhanced spectral range imaging sensor |
JP4687155B2 (ja) * | 2005-03-09 | 2011-05-25 | ソニー株式会社 | 固体撮像装置およびその駆動方法 |
GB2424758A (en) * | 2005-03-31 | 2006-10-04 | E2V Tech | CCD device |
GB2431538B (en) * | 2005-10-24 | 2010-12-22 | E2V Tech | CCD device |
US7755685B2 (en) * | 2007-09-28 | 2010-07-13 | Sarnoff Corporation | Electron multiplication CMOS imager |
JP5346605B2 (ja) * | 2009-01-30 | 2013-11-20 | 浜松ホトニクス株式会社 | 固体撮像装置 |
GB2468668B (en) * | 2009-03-17 | 2014-07-16 | E2V Tech Uk Ltd | CCD imaging array with extended dynamic range |
-
2009
- 2009-01-30 JP JP2009020457A patent/JP5237843B2/ja active Active
-
2010
- 2010-01-22 US US12/920,142 patent/US8367999B2/en not_active Expired - Fee Related
- 2010-01-22 CN CN2010800011468A patent/CN101960837B/zh not_active Expired - Fee Related
- 2010-01-22 EP EP10735747A patent/EP2247099B1/en not_active Not-in-force
- 2010-01-22 WO PCT/JP2010/050777 patent/WO2010087278A1/ja active Application Filing
- 2010-01-22 KR KR1020107015311A patent/KR101178670B1/ko active IP Right Grant
- 2010-01-22 AT AT10735747T patent/ATE550874T1/de active
- 2010-01-27 TW TW099102275A patent/TWI481257B/zh not_active IP Right Cessation
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09186937A (ja) * | 1995-12-27 | 1997-07-15 | Nec Corp | 固体撮像装置 |
JPH10304256A (ja) * | 1997-03-22 | 1998-11-13 | Eev Ltd | Ccdイメージャ |
JP2000299818A (ja) * | 1999-04-14 | 2000-10-24 | Nippon Hoso Kyokai <Nhk> | Ccd型撮像素子の駆動方法およびccd型撮像装置 |
JP2001119010A (ja) * | 1999-10-18 | 2001-04-27 | Nikon Corp | マルチ出力固体撮像装置 |
JP2006201044A (ja) * | 2005-01-21 | 2006-08-03 | Hitachi High-Technologies Corp | 欠陥検査方法及びその装置 |
Also Published As
Publication number | Publication date |
---|---|
WO2010087278A1 (ja) | 2010-08-05 |
TWI481257B (zh) | 2015-04-11 |
KR20100109550A (ko) | 2010-10-08 |
EP2247099A4 (en) | 2011-03-23 |
EP2247099A1 (en) | 2010-11-03 |
US8367999B2 (en) | 2013-02-05 |
CN101960837B (zh) | 2012-11-28 |
US20110031377A1 (en) | 2011-02-10 |
ATE550874T1 (de) | 2012-04-15 |
JP5237843B2 (ja) | 2013-07-17 |
EP2247099B1 (en) | 2012-03-21 |
TW201127031A (en) | 2011-08-01 |
KR101178670B1 (ko) | 2012-08-30 |
CN101960837A (zh) | 2011-01-26 |
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