JP5346605B2 - 固体撮像装置 - Google Patents
固体撮像装置 Download PDFInfo
- Publication number
- JP5346605B2 JP5346605B2 JP2009020465A JP2009020465A JP5346605B2 JP 5346605 B2 JP5346605 B2 JP 5346605B2 JP 2009020465 A JP2009020465 A JP 2009020465A JP 2009020465 A JP2009020465 A JP 2009020465A JP 5346605 B2 JP5346605 B2 JP 5346605B2
- Authority
- JP
- Japan
- Prior art keywords
- solid
- imaging device
- state imaging
- charges
- units
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000003384 imaging method Methods 0.000 title claims description 46
- 238000009825 accumulation Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14806—Structural or functional details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76816—Output structures
Description
Claims (1)
- マルチポート型の固体撮像装置であって、
複数の画素列を有する撮像領域と、
前記撮像領域からの電荷に基づく信号を生成する複数のユニットと、
を備え、
前記複数のユニットの各々は、
前記複数の画素列のうち一以上の対応の画素列からの電荷を転送する出力レジスタと、
並列に設けられた複数の増倍レジスタであって、前記出力レジスタからの電荷を受けて個別に増倍された電荷を生成する複数の増倍レジスタと、
前記並列に設けられた複数の増倍レジスタから、増倍された電荷を受けて、該増倍された電荷に基づく信号を生成する一つのアンプと、
を有している、
固体撮像装置。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009020465A JP5346605B2 (ja) | 2009-01-30 | 2009-01-30 | 固体撮像装置 |
US13/147,046 US8520111B2 (en) | 2009-01-30 | 2010-01-22 | Solid-state imaging device including a plurality of units each having a corner register |
CN201080003562.1A CN102246508B (zh) | 2009-01-30 | 2010-01-22 | 固体摄像装置 |
PCT/JP2010/050776 WO2010087277A1 (ja) | 2009-01-30 | 2010-01-22 | 固体撮像装置 |
KR1020117007270A KR101594201B1 (ko) | 2009-01-30 | 2010-01-22 | 고체촬상장치 |
EP10735746A EP2393282A4 (en) | 2009-01-30 | 2010-01-22 | SOLID STATE IMAGE DEVICE |
TW099102274A TWI531235B (zh) | 2009-01-30 | 2010-01-27 | Solid state camera device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009020465A JP5346605B2 (ja) | 2009-01-30 | 2009-01-30 | 固体撮像装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010178195A JP2010178195A (ja) | 2010-08-12 |
JP5346605B2 true JP5346605B2 (ja) | 2013-11-20 |
Family
ID=42395539
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009020465A Active JP5346605B2 (ja) | 2009-01-30 | 2009-01-30 | 固体撮像装置 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8520111B2 (ja) |
EP (1) | EP2393282A4 (ja) |
JP (1) | JP5346605B2 (ja) |
KR (1) | KR101594201B1 (ja) |
CN (1) | CN102246508B (ja) |
TW (1) | TWI531235B (ja) |
WO (1) | WO2010087277A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5237843B2 (ja) * | 2009-01-30 | 2013-07-17 | 浜松ホトニクス株式会社 | 固体撮像装置 |
US8643758B2 (en) * | 2010-12-20 | 2014-02-04 | Omnivision Technologies, Inc. | Method for processing an image captured by an image sensor having a charge multiplication output channel and a charge sensing output channel |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2323471B (en) * | 1997-03-22 | 2002-04-17 | Eev Ltd | CCd imagers |
GB2371403B (en) | 2001-01-18 | 2005-07-27 | Marconi Applied Techn Ltd | Solid state imager arrangements |
US7420605B2 (en) * | 2001-01-18 | 2008-09-02 | E2V Technologies (Uk) Limited | Solid state imager arrangements |
JP2002369081A (ja) * | 2001-06-08 | 2002-12-20 | Fuji Photo Film Co Ltd | 電荷増倍型固体電子撮像装置およびその制御方法 |
JP2003018467A (ja) | 2001-07-04 | 2003-01-17 | Fuji Photo Film Co Ltd | 電荷増倍型固体電子撮像装置およびその制御方法 |
US6784412B2 (en) | 2001-08-29 | 2004-08-31 | Texas Instruments Incorporated | Compact image sensor layout with charge multiplying register |
JP2005064304A (ja) * | 2003-08-15 | 2005-03-10 | Koji Eto | 高感度高速撮像素子 |
US7522205B2 (en) * | 2004-09-10 | 2009-04-21 | Eastman Kodak Company | Image sensor with charge multiplication |
GB2429521A (en) * | 2005-08-18 | 2007-02-28 | E2V Tech | CCD device for time resolved spectroscopy |
GB2431538B (en) | 2005-10-24 | 2010-12-22 | E2V Tech | CCD device |
JP4958602B2 (ja) | 2007-03-30 | 2012-06-20 | 富士フイルム株式会社 | 撮像装置及びその画像合成方法 |
-
2009
- 2009-01-30 JP JP2009020465A patent/JP5346605B2/ja active Active
-
2010
- 2010-01-22 WO PCT/JP2010/050776 patent/WO2010087277A1/ja active Application Filing
- 2010-01-22 KR KR1020117007270A patent/KR101594201B1/ko active IP Right Grant
- 2010-01-22 US US13/147,046 patent/US8520111B2/en not_active Expired - Fee Related
- 2010-01-22 EP EP10735746A patent/EP2393282A4/en not_active Ceased
- 2010-01-22 CN CN201080003562.1A patent/CN102246508B/zh not_active Expired - Fee Related
- 2010-01-27 TW TW099102274A patent/TWI531235B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP2393282A4 (en) | 2012-09-19 |
KR20110105762A (ko) | 2011-09-27 |
TW201034454A (en) | 2010-09-16 |
US20110298958A1 (en) | 2011-12-08 |
TWI531235B (zh) | 2016-04-21 |
KR101594201B1 (ko) | 2016-02-15 |
EP2393282A1 (en) | 2011-12-07 |
CN102246508B (zh) | 2014-06-18 |
JP2010178195A (ja) | 2010-08-12 |
WO2010087277A1 (ja) | 2010-08-05 |
US8520111B2 (en) | 2013-08-27 |
CN102246508A (zh) | 2011-11-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5664141B2 (ja) | 固体撮像素子およびカメラシステム | |
JP5631050B2 (ja) | 固体撮像装置およびカメラ | |
JP5764783B2 (ja) | 固体撮像装置 | |
JP5237844B2 (ja) | 固体撮像装置 | |
JP2010130657A (ja) | 固体撮像装置及びそれを用いた撮像システム | |
JP5895525B2 (ja) | 撮像素子 | |
JP5959187B2 (ja) | 固体撮像装置、撮像装置、および信号読み出し方法 | |
JP6734649B2 (ja) | 撮像装置、撮像システム、及び、撮像装置の制御方法 | |
JP5764784B2 (ja) | 固体撮像装置 | |
JP2008099066A (ja) | 固体撮像装置 | |
JP2011199196A (ja) | 固体撮像装置 | |
JP5237843B2 (ja) | 固体撮像装置 | |
JP5346605B2 (ja) | 固体撮像装置 | |
CN101185166B (zh) | 场效应晶体管布置对称的像素 | |
JP7458746B2 (ja) | 光電変換装置、撮像システム及び移動体 | |
JP2008172704A (ja) | 固体撮像装置及びその駆動方法 | |
JP5893372B2 (ja) | 固体撮像装置、撮像装置、および信号読み出し方法 | |
JP5655783B2 (ja) | 画像読取装置 | |
JP5945463B2 (ja) | 固体撮像装置 | |
JP5914612B2 (ja) | 固体撮像装置およびカメラ | |
JP2010118777A (ja) | 固体撮像装置及びその駆動方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20111012 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130326 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130514 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130813 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130819 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5346605 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |