CN102246508B - 固体摄像装置 - Google Patents

固体摄像装置 Download PDF

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CN102246508B
CN102246508B CN201080003562.1A CN201080003562A CN102246508B CN 102246508 B CN102246508 B CN 102246508B CN 201080003562 A CN201080003562 A CN 201080003562A CN 102246508 B CN102246508 B CN 102246508B
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electric charge
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camera head
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CN102246508A (zh
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铃木久则
米田康人
高木慎一郎
前田坚太郎
村松雅治
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Hamamatsu Photonics KK
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14806—Structural or functional details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76816—Output structures

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Studio Devices (AREA)

Abstract

本发明的一个实施方式的固体摄像装置，为多端口型的固体摄像装置，其具备摄像区域、及多个单元。摄像区域具有多个像素列。多个单元生成基于来自摄像区域的电荷的信号。多个单元分别具有输出寄存器、多个倍增寄存器、及放大器。输出寄存器传输来自多个像素列中一个以上的对应的像素列的电荷。多个倍增寄存器并联设置，且接收来自输出寄存器的电荷而个别地生成倍增的电荷。放大器生成基于来自多个倍增寄存器的经倍增的电荷的信号。

Description

固体摄像装置
技术领域
本发明涉及多端口型且电荷倍增型的固体摄像装置。
背景技术
固体摄像装置中，存在如日本特开2007-124675号公报及日本专利3862850号说明书中所记载的多端口型且电荷倍增型的固体摄像装置。这样的固体摄像装置具备摄像区域、及多个单元。摄像区域包含多个像素列。多个单元分别具有：输出寄存器，其传输来自多个像素列中一个以上的对应的像素列的电荷；倍增寄存器，其接收由该输出寄存器传输的电荷而生成经倍增的电荷；及放大器，其生成基于来自倍增寄存器的经倍增的电荷的信号。
专利文献1：日本特开2007-124675号公报
专利文献2：日本专利3862850号说明书
发明内容
发明所要解决的问题
对于多端口型且电荷倍增型的固体摄像装置，所期望的是减小所有单元的倍增寄存器的增益的偏差。然而，由于制造偏差等种种原因，通常难以抑制单元间的增益的偏差。
本发明的目的在于提供一种固体摄像装置，其为将基于来自摄像区域的电荷的信号从多个单元输出的多端口型且电荷倍增型的固体摄像装置，其可减少单元间的增益的偏差。
解决问题的技术手段
本发明的固体摄像装置，为多端口型的固体摄像装置，其具备摄像区域、及多个单元。摄像区域具有多个像素列。多个单元生成基于来自摄像区域的电荷的信号。多个单元分别具有输出寄存器、多个倍增寄存器、及放大器。输出寄存器传输来自多个像素列中一个以上的对应的像素列的电荷。多个倍增寄存器并联设置，且接收来自输出寄存器的电荷而个别地生成经倍增的电荷。放大器生成基于来自多个倍增寄存器的经倍增的电荷的信号。
根据该固体摄像装置，由于构成多端口的多个单元分别具有并联设置的多个倍增寄存器，因此即使多个倍增寄存器间的增益存在偏差，各单元的增益被平均化。其结果，可减少单元间的增益的偏差。
发明的效果
如以上说明，根据本发明可提供一种固体摄像装置，其为将基于来自摄像区域的电荷的信号从多个单元输出的多端口型且电荷倍增型的固体摄像装置，其可减少单元间的增益的偏差。
附图说明
图1为表示一实施方式的固体摄像装置的图。
具体实施方式
以下参照附图详细说明本发明的优选的实施方式。
图1为显示一实施方式的固体摄像装置的图。图1所示的固体摄像装置10具备摄像区域12、及多个单元14。
摄像区域12为感应入射的光而产生电荷的区域。具体而言，摄像区域12包含以二维排列的多个像素，各像素包含光电二极管。
本实施方式的固体摄像装置10除了摄像区域12的外还具备电荷存储区域16。电荷存储区域16为将由摄像区域12生成的电荷在传输至后述的输出寄存器前，暂时存储的部分。这样的具有电荷存储区域16的固体摄像装置10，称为帧传输(frame transfer)CCD影像传感器。然而，本发明的固体摄像装置也可为隔行(interline)CCD影像传感器、或全帧传输(full frame transfer)CCD影像传感器。
摄像区域12具有多个区域12a～12d。多个区域12a～12d在水平方向并列，且各区域包含多个像素列。由多个区域12a～12d所生成的电荷输出至对应的单元14。另外，固体摄像装置10的摄像区域12包含四个区域。即，具有4个端口的固体摄像装置，但本发明的固体摄像装置的端口数并非限定于四个。
多个单元14分别具有输出寄存器18、多个倍增寄存器20、及放大器22。本实施方式中，多个单元14分别进而包含转角寄存器24。
输出寄存器18为接收由摄像区域12的对应的区域生成、且朝垂直方向传输的电荷，并将该电荷在水平方向传输的传输寄存器。转角寄存器24与输出寄存器18相同，为传输电荷的传输寄存器。转角寄存器24设于输出寄存器18与倍增寄存器20之间。转角寄存器24将由输出寄存器18所传输的电荷传输至倍增寄存器20。
多个倍增寄存器20为通过碰撞电离效应将电荷倍增，且传输经倍增的电荷的寄存器。本实施方式中，虽然各单元具有三个倍增寄存器，但本发明的固体摄像装置中各单元只要具有两个以上的倍增寄存器即可。
固体摄像装置10中，多个倍增寄存器20并联设置于输出寄存器18与放大器22之间。该多个倍增寄存器20经由转角寄存器24接收由输出寄存器18传输的电荷，且将倍增的电荷输出至放大器22。
放大器22接收由多个倍增寄存器20所倍增的电荷，进行电荷电压转换，并生成对应于所接收的电荷量的信号。作为放大器22，可使用浮动扩散放大器。
根据以上说明的固体摄像装置10，基于由并联设置的多个倍增寄存器20所倍增的电荷的信号，从放大器22输出。因此，即使多个倍增寄存器20各自的增益存在偏差，各单元14的增益也被平均化。其结果，多个单元14间的增益的偏差被减少。故可使由固体摄像装置10所获得的图像成为高质量。
符号说明
10 固体摄像装置
12 摄像区域
14 单元
16 电荷存储区域
18 输出寄存器
20 倍增寄存器
22 放大器
24 转角寄存器

Claims (1)

1.一种固体摄像装置，其特征在于，
是多端口型的固体摄像装置，
具备：
摄像区域，具有多个像素列；及
多个单元，生成基于来自所述摄像区域的电荷的信号，
所述多个单元分别具有：
输出寄存器，传输来自所述多个像素列中一个以上的对应的像素列的电荷；
转角寄存器，传输由所述输出寄存器所传输的电荷；
多个倍增寄存器，接收来自所述转角寄存器的电荷而个别地生成经倍增的电荷；以及
放大器，生成基于来自所述多个倍增寄存器的经倍增的电荷的信号，
所述转角寄存器设置在所述输出寄存器与所述倍增寄存器之间，
所述多个倍增寄存器直接连接于所述转角寄存器，且并列设置。
CN201080003562.1A 2009-01-30 2010-01-22 固体摄像装置 Expired - Fee Related CN102246508B (zh)

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JP2009020465A JP5346605B2 (ja) 2009-01-30 2009-01-30 固体撮像装置
JP2009-020465 2009-01-30
PCT/JP2010/050776 WO2010087277A1 (ja) 2009-01-30 2010-01-22 固体撮像装置

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EP (1) EP2393282A4 (zh)
JP (1) JP5346605B2 (zh)
KR (1) KR101594201B1 (zh)
CN (1) CN102246508B (zh)
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JP5237843B2 (ja) * 2009-01-30 2013-07-17 浜松ホトニクス株式会社 固体撮像装置
US8643758B2 (en) * 2010-12-20 2014-02-04 Omnivision Technologies, Inc. Method for processing an image captured by an image sensor having a charge multiplication output channel and a charge sensing output channel

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CN101277374A (zh) * 2007-03-30 2008-10-01 富士胶片株式会社 驱动固态成像器的方法和装置、成像设备和图像合成方法

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US6444968B1 (en) * 1997-03-22 2002-09-03 Eev Ltd CCD imager with separate charge multiplication elements
EP1755167A2 (en) * 2005-08-18 2007-02-21 E2V Technologies (UK) Limited System & device for time resolved spectroscopy
CN101277374A (zh) * 2007-03-30 2008-10-01 富士胶片株式会社 驱动固态成像器的方法和装置、成像设备和图像合成方法

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EP2393282A4 (en) 2012-09-19
TWI531235B (zh) 2016-04-21
WO2010087277A1 (ja) 2010-08-05
CN102246508A (zh) 2011-11-16
KR20110105762A (ko) 2011-09-27
KR101594201B1 (ko) 2016-02-15
US8520111B2 (en) 2013-08-27
EP2393282A1 (en) 2011-12-07
JP2010178195A (ja) 2010-08-12
JP5346605B2 (ja) 2013-11-20
US20110298958A1 (en) 2011-12-08

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