JP2010178195A - 固体撮像装置 - Google Patents
固体撮像装置 Download PDFInfo
- Publication number
- JP2010178195A JP2010178195A JP2009020465A JP2009020465A JP2010178195A JP 2010178195 A JP2010178195 A JP 2010178195A JP 2009020465 A JP2009020465 A JP 2009020465A JP 2009020465 A JP2009020465 A JP 2009020465A JP 2010178195 A JP2010178195 A JP 2010178195A
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- imaging device
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- 238000003384 imaging method Methods 0.000 title claims abstract description 53
- 238000009825 accumulation Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14806—Structural or functional details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76816—Output structures
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Ceramic Engineering (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Studio Devices (AREA)
Abstract
【解決手段】固体撮像装置10は、撮像領域12、及び、複数のユニット14を備えている。撮像領域12は、複数の画素列を有している。複数のユニット14は、撮像領域からの電荷に基づく信号を生成するものである。複数のユニット14の各々は、出力レジスタ24、複数の増倍レジスタ20、及び、アンプ22を有している。出力レジスタ24は、複数の画素列のうち一以上の対応の画素列からの電荷を転送する。複数の増倍レジスタ20は、並列に設けられており、出力レジスタ24からの電荷を受けて個別に増倍された電荷を生成する。アンプ22は、複数の増倍レジスタからの増倍された電荷に基づく信号を生成する。
【選択図】図1
Description
Claims (1)
- マルチポート型の固体撮像装置であって、
複数の画素列を有する撮像領域と、
前記撮像領域からの電荷に基づく信号を生成する複数のユニットと、
を備える固体撮像装置であって、
前記複数のユニットの各々は、
前記複数の画素列のうち一以上の対応の画素列からの電荷を転送する出力レジスタと、
並列に設けられた複数の増倍レジスタであって、前記出力レジスタからの電荷を受けて個別に増倍された電荷を生成する複数の増倍レジスタと、
前記複数の増倍レジスタからの増倍された電荷に基づく信号を生成するアンプと、
を有している、
固体撮像装置。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009020465A JP5346605B2 (ja) | 2009-01-30 | 2009-01-30 | 固体撮像装置 |
EP10735746A EP2393282A4 (en) | 2009-01-30 | 2010-01-22 | SOLID STATE IMAGE DEVICE |
US13/147,046 US8520111B2 (en) | 2009-01-30 | 2010-01-22 | Solid-state imaging device including a plurality of units each having a corner register |
PCT/JP2010/050776 WO2010087277A1 (ja) | 2009-01-30 | 2010-01-22 | 固体撮像装置 |
KR1020117007270A KR101594201B1 (ko) | 2009-01-30 | 2010-01-22 | 고체촬상장치 |
CN201080003562.1A CN102246508B (zh) | 2009-01-30 | 2010-01-22 | 固体摄像装置 |
TW099102274A TWI531235B (zh) | 2009-01-30 | 2010-01-27 | Solid state camera device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009020465A JP5346605B2 (ja) | 2009-01-30 | 2009-01-30 | 固体撮像装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010178195A true JP2010178195A (ja) | 2010-08-12 |
JP5346605B2 JP5346605B2 (ja) | 2013-11-20 |
Family
ID=42395539
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009020465A Active JP5346605B2 (ja) | 2009-01-30 | 2009-01-30 | 固体撮像装置 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8520111B2 (ja) |
EP (1) | EP2393282A4 (ja) |
JP (1) | JP5346605B2 (ja) |
KR (1) | KR101594201B1 (ja) |
CN (1) | CN102246508B (ja) |
TW (1) | TWI531235B (ja) |
WO (1) | WO2010087277A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5237843B2 (ja) * | 2009-01-30 | 2013-07-17 | 浜松ホトニクス株式会社 | 固体撮像装置 |
US8643758B2 (en) * | 2010-12-20 | 2014-02-04 | Omnivision Technologies, Inc. | Method for processing an image captured by an image sensor having a charge multiplication output channel and a charge sensing output channel |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10304256A (ja) * | 1997-03-22 | 1998-11-13 | Eev Ltd | Ccdイメージャ |
JP2005064304A (ja) * | 2003-08-15 | 2005-03-10 | Koji Eto | 高感度高速撮像素子 |
JP2008252790A (ja) * | 2007-03-30 | 2008-10-16 | Fujifilm Corp | 固体撮像素子の駆動方法,撮像装置,撮像装置の画像合成方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2371403B (en) | 2001-01-18 | 2005-07-27 | Marconi Applied Techn Ltd | Solid state imager arrangements |
US7420605B2 (en) * | 2001-01-18 | 2008-09-02 | E2V Technologies (Uk) Limited | Solid state imager arrangements |
JP2002369081A (ja) * | 2001-06-08 | 2002-12-20 | Fuji Photo Film Co Ltd | 電荷増倍型固体電子撮像装置およびその制御方法 |
JP2003018467A (ja) * | 2001-07-04 | 2003-01-17 | Fuji Photo Film Co Ltd | 電荷増倍型固体電子撮像装置およびその制御方法 |
US6784412B2 (en) | 2001-08-29 | 2004-08-31 | Texas Instruments Incorporated | Compact image sensor layout with charge multiplying register |
US7522205B2 (en) * | 2004-09-10 | 2009-04-21 | Eastman Kodak Company | Image sensor with charge multiplication |
GB2429521A (en) * | 2005-08-18 | 2007-02-28 | E2V Tech | CCD device for time resolved spectroscopy |
GB2431538B (en) | 2005-10-24 | 2010-12-22 | E2V Tech | CCD device |
-
2009
- 2009-01-30 JP JP2009020465A patent/JP5346605B2/ja active Active
-
2010
- 2010-01-22 US US13/147,046 patent/US8520111B2/en not_active Expired - Fee Related
- 2010-01-22 WO PCT/JP2010/050776 patent/WO2010087277A1/ja active Application Filing
- 2010-01-22 KR KR1020117007270A patent/KR101594201B1/ko active IP Right Grant
- 2010-01-22 EP EP10735746A patent/EP2393282A4/en not_active Ceased
- 2010-01-22 CN CN201080003562.1A patent/CN102246508B/zh not_active Expired - Fee Related
- 2010-01-27 TW TW099102274A patent/TWI531235B/zh not_active IP Right Cessation
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10304256A (ja) * | 1997-03-22 | 1998-11-13 | Eev Ltd | Ccdイメージャ |
JP2005064304A (ja) * | 2003-08-15 | 2005-03-10 | Koji Eto | 高感度高速撮像素子 |
JP2008252790A (ja) * | 2007-03-30 | 2008-10-16 | Fujifilm Corp | 固体撮像素子の駆動方法,撮像装置,撮像装置の画像合成方法 |
Also Published As
Publication number | Publication date |
---|---|
CN102246508B (zh) | 2014-06-18 |
TW201034454A (en) | 2010-09-16 |
JP5346605B2 (ja) | 2013-11-20 |
EP2393282A1 (en) | 2011-12-07 |
CN102246508A (zh) | 2011-11-16 |
KR101594201B1 (ko) | 2016-02-15 |
US20110298958A1 (en) | 2011-12-08 |
US8520111B2 (en) | 2013-08-27 |
KR20110105762A (ko) | 2011-09-27 |
TWI531235B (zh) | 2016-04-21 |
WO2010087277A1 (ja) | 2010-08-05 |
EP2393282A4 (en) | 2012-09-19 |
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