TWI531235B - Solid state camera device - Google Patents

Solid state camera device Download PDF

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TWI531235B
TWI531235B TW099102274A TW99102274A TWI531235B TW I531235 B TWI531235 B TW I531235B TW 099102274 A TW099102274 A TW 099102274A TW 99102274 A TW99102274 A TW 99102274A TW I531235 B TWI531235 B TW I531235B
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Taiwan
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register
charge
solid
corner
multiplying
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TW099102274A
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TW201034454A (en
Inventor
Hisanori Suzuki
Yasuhito Yoneta
Shinichiro Takagi
Kentaro Maeta
Masaharu Muramatsu
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Hamamatsu Photonics Kk
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14806—Structural or functional details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76816—Output structures

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Studio Devices (AREA)

Description

固態攝像裝置
本發明係關於多埠型且電荷倍增型之固態攝像裝置。
固態攝像裝置中，存在如日本特開2007-124675號公報及日本專利3862850號說明書中所記載之多埠型且電荷倍增型之固態攝像裝置。如此之固態攝像裝置具備攝像區域、及複數之單元。攝像區域包含複數之像素行。複數之單元分別具有：輸出暫存器，其係傳送來自複數之像素行中一個以上之對應之像素行的電荷；倍增暫存器，其係接受由該輸出暫存器傳送之電荷而產生倍增之電荷；及放大器，其係產生基於來自倍增暫存器之經倍增電荷的信號。
專利文獻1：日本特開2007-124675號公報
專利文獻2：日本專利3862850號說明書
對於多埠型且電荷倍增型之固態攝像裝置，所期望的是減小所有單元之倍增暫存器之增益的不均一。然而，由於製造不均一等種種原因，一般情形下係難以控制單元間之增益的不均一。
本發明之目的在於提供一種固態攝像裝置，其係將基於來自攝像區域之電荷的信號從複數之單元輸出之多埠型且電荷倍增型的固態攝像裝置，其可減少單元間之增益之不均一。
本發明之固態攝像裝置，係多埠型之固態攝像裝置，其具備攝像區域、及複數之單元。攝像區域具有複數之像素行。複數之單元係產生基於來自攝像區域之電荷的信號者。複數之單元分別具有輸出暫存器、複數之倍增暫存器、及放大器。輸出暫存器係傳送來自複數之像素行中一個以上之對應之像素行的電荷。複數之倍增暫存器係並聯設置，且接受來自輸出暫存器之電荷而個別產生倍增之電荷。放大器係產生基於來自複數之倍增暫存器之經倍增電荷的信號。
根據該固態攝像裝置，由於構成多埠之複數之單元分別具有並聯設置之複數的倍增暫存器，因此即使複數之倍增暫存器間之增益存有不均一，各單元之增益亦為平均化者。其結果，可減少單元間之增益之不均一。
如以上說明，根據本發明可提供一種固態攝像裝置，其係將基於來自攝像區域之電荷的信號從複數之單元輸出之多埠型且電荷倍增型的固態攝像裝置，其可減少單元間之增益之不均一。
以下茲參照圖式詳細說明本發明之適宜之實施形態。
圖1係顯示一實施形態之固態攝像裝置的圖。圖1所示之固態攝像裝置10係具備攝像區域12、及複數之單元14。
攝像區域12係感應入射之光而產生電荷之區域。具體而 言，攝像區域12包含以二維排列之複數之像素，各像素包含光電二極體。
本實施形態之固態攝像裝置10除了攝像區域12之外又具備電荷蓄積區域16。電荷蓄積區域16係將由攝像區域12產生之電荷在傳送於後述之輸出暫存器前，暫時蓄積之部分。如此之具有電荷蓄積區域16之固態攝像裝置10，係稱為訊框傳送CCD影像感測器。然而，本發明之固態攝像裝置亦可為交線CCD影像感測器、或全訊框傳送CCD影像感測器。
攝像區域12具有複數之區域12a~12d。複數之區域12a~12d係並列於水平方向，且各區域包含複數之像素行。由複數之區域12a~12d所產生之電荷係輸出於對應之單元14。另，固態攝像裝置10之攝像區域12包含四個區域。即，具有4個埠之固態攝像裝置，但本發明之固態攝像裝置之埠數並非限定於四個。
複數之單元14分別具有輸出暫存器18、複數之倍增暫存器20、及放大器22。本實施形態中，複數之單元14分別進而亦包含轉角暫存器24。
輸出暫存器18係接受由攝像區域12之對應之區域產生、且朝垂直方向傳送之電荷，並將該電荷傳送於水平方向之傳送暫存器。轉角暫存器24係與輸出暫存器18相同，為傳送電荷之傳送暫存器。轉角暫存器24係設於輸出暫存器18與倍增暫存器20之間。轉角暫存器24係將由輸出暫存器18所傳送之電荷傳送至倍增暫存器20。
複數之倍增暫存器20係藉由碰撞游離效應將電荷倍增，且傳送經倍增之電荷的暫存器。本實施形態中，各單元具有三個倍增暫存器，但本發明之固態攝像裝置中各單元只要具有兩個以上之倍增暫存器即可。
固態攝像裝置10中，複數之倍增暫存器20係並聯設置於輸出暫存器18與放大器22之間。該等複數之倍增暫存器20係經由轉角暫存器24接受由輸出暫存器18傳送之電荷，且將倍增之電荷輸出至放大器22。
放大器22係接受由複數之倍增暫存器20所倍增之電荷，進行電荷電壓轉換，並產生對應於所接受之電荷量的信號。作為放大器22，可使用浮動擴散放大器。
根據以上說明之固態攝像裝置10，基於由並聯設置之複數個倍增暫存器20所倍增之電荷的信號，係從放大器22輸出。因此，即使複數之倍增暫存器20各自之增益存在不均一之情事，各單元14之增益亦被平均化。其結果，複數之單元14間之增益的不均一獲得減少。故可使由固態攝像裝置10所獲得之圖像成為高品質者。
10‧‧‧固態攝像裝置
12‧‧‧攝像區域
14‧‧‧單元
16‧‧‧電荷蓄積區域
18‧‧‧輸出暫存器
20‧‧‧倍增暫存器
22‧‧‧放大器
24‧‧‧轉角暫存器
圖1係顯示一實施形態之固態攝像裝置的圖。
10‧‧‧固態攝像裝置
12‧‧‧攝像區域
12a‧‧‧區域
12b‧‧‧區域
12c‧‧‧區域
12d‧‧‧區域
14‧‧‧單元
16‧‧‧電荷蓄積區域
18‧‧‧輸出暫存器
20‧‧‧倍增暫存器
22‧‧‧放大器
24‧‧‧轉角暫存器

Claims (1)

  1. 一種固態攝像裝置，其係多埠型之固態攝像裝置，包含：攝像區域，其具有複數之像素行；及複數之單元，其係產生基於來自上述攝像區域之電荷的信號；且上述複數之單元分別包含：輸出暫存器，其係傳送來自上述複數之像素行中一個以上之對應之像素行的電荷；轉角暫存器(corner register)，其係傳送自上述輸出暫存器被傳送之電荷；複數之倍增暫存器，其係接受來自上述轉角暫存器之電荷而個別產生倍增之電荷；及放大器，其係產生基於來自上述複數之倍增暫存器之經倍增電荷的信號；上述轉角暫存器係設於上述輸出暫存器與該等複數之倍增暫存器之間，上述複數之倍增暫存器係相對於上述轉角暫存器而並排地設置，且直接連結於該轉角暫存器。
TW099102274A 2009-01-30 2010-01-27 Solid state camera device TWI531235B (zh)

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JP2009020465A JP5346605B2 (ja) 2009-01-30 2009-01-30 固体撮像装置

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TWI531235B true TWI531235B (zh) 2016-04-21

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US (1) US8520111B2 (zh)
EP (1) EP2393282A4 (zh)
JP (1) JP5346605B2 (zh)
KR (1) KR101594201B1 (zh)
CN (1) CN102246508B (zh)
TW (1) TWI531235B (zh)
WO (1) WO2010087277A1 (zh)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5237843B2 (ja) * 2009-01-30 2013-07-17 浜松ホトニクス株式会社 固体撮像装置
US8643758B2 (en) * 2010-12-20 2014-02-04 Omnivision Technologies, Inc. Method for processing an image captured by an image sensor having a charge multiplication output channel and a charge sensing output channel

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2323471B (en) * 1997-03-22 2002-04-17 Eev Ltd CCd imagers
US7420605B2 (en) * 2001-01-18 2008-09-02 E2V Technologies (Uk) Limited Solid state imager arrangements
GB2371403B (en) 2001-01-18 2005-07-27 Marconi Applied Techn Ltd Solid state imager arrangements
JP2002369081A (ja) * 2001-06-08 2002-12-20 Fuji Photo Film Co Ltd 電荷増倍型固体電子撮像装置およびその制御方法
JP2003018467A (ja) * 2001-07-04 2003-01-17 Fuji Photo Film Co Ltd 電荷増倍型固体電子撮像装置およびその制御方法
US6784412B2 (en) 2001-08-29 2004-08-31 Texas Instruments Incorporated Compact image sensor layout with charge multiplying register
JP2005064304A (ja) * 2003-08-15 2005-03-10 Koji Eto 高感度高速撮像素子
US7522205B2 (en) * 2004-09-10 2009-04-21 Eastman Kodak Company Image sensor with charge multiplication
GB2429521A (en) * 2005-08-18 2007-02-28 E2V Tech CCD device for time resolved spectroscopy
GB2431538B (en) 2005-10-24 2010-12-22 E2V Tech CCD device
JP4958602B2 (ja) 2007-03-30 2012-06-20 富士フイルム株式会社 撮像装置及びその画像合成方法

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CN102246508B (zh) 2014-06-18
JP5346605B2 (ja) 2013-11-20
EP2393282A4 (en) 2012-09-19
US8520111B2 (en) 2013-08-27
EP2393282A1 (en) 2011-12-07
CN102246508A (zh) 2011-11-16
KR20110105762A (ko) 2011-09-27
US20110298958A1 (en) 2011-12-08
TW201034454A (en) 2010-09-16
KR101594201B1 (ko) 2016-02-15
JP2010178195A (ja) 2010-08-12
WO2010087277A1 (ja) 2010-08-05

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