JP5330001B2 - 固体撮像装置 - Google Patents
固体撮像装置 Download PDFInfo
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- JP5330001B2 JP5330001B2 JP2009020200A JP2009020200A JP5330001B2 JP 5330001 B2 JP5330001 B2 JP 5330001B2 JP 2009020200 A JP2009020200 A JP 2009020200A JP 2009020200 A JP2009020200 A JP 2009020200A JP 5330001 B2 JP5330001 B2 JP 5330001B2
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- multiplication
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- 238000003384 imaging method Methods 0.000 title claims description 152
- 238000009826 distribution Methods 0.000 claims description 79
- 239000006185 dispersion Substances 0.000 claims description 38
- 230000002708 enhancing effect Effects 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- 230000009471 action Effects 0.000 claims description 4
- 230000006698 induction Effects 0.000 claims description 3
- 230000004048 modification Effects 0.000 description 12
- 238000012986 modification Methods 0.000 description 12
- 238000010586 diagram Methods 0.000 description 11
- 230000000694 effects Effects 0.000 description 8
- 108091006146 Channels Proteins 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 230000001939 inductive effect Effects 0.000 description 5
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- 102000004129 N-Type Calcium Channels Human genes 0.000 description 4
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Images
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
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- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Description
[第1の実施形態]
[第2の実施形態]
[第3の実施形態]
[第4の実施形態]
[第5の実施形態]
[第6の実施形態]
[第7の実施形態]
[第8の実施形態]
[第9の実施形態]
[第10の実施形態]
Claims (4)
- 電荷増倍型の固体撮像装置において、
入射光量に応じた電荷を生成する撮像領域と、
前記撮像領域からの電荷を受ける出力レジスタ部と、
前記出力レジスタ部からの電荷を増倍する増倍レジスタ部と、
前記増倍レジスタ部に入力される電荷を、転送方向と直交する幅方向に分散させる少なくとも1つの電荷分散手段と、
を備え、
前記電荷分散手段は、前記増倍レジスタ部における少なくとも入力側に配置されると共に、前記幅方向に離間して複数配置され、電荷の転送を阻害する半導体領域又は絶縁領域からなり、
前記増倍レジスタ部に入力される電荷は、前記電荷分散手段の間に形成される複数の転送経路であって、前記幅方向に分散して形成される当該複数の転送経路へ分散される、
固体撮像装置。 - 電荷増倍型の固体撮像装置において、
入射光量に応じた電荷を生成する撮像領域と、
前記撮像領域からの電荷を受ける出力レジスタ部と、
前記出力レジスタ部からの電荷を増倍する増倍レジスタ部と、
前記増倍レジスタ部に入力される電荷を、転送方向と直交する幅方向に分散させる少なくとも1つの電荷分散手段と、
前記出力レジスタ部と前記増倍レジスタ部との間に配置された中間レジスタ部と、
を備え、
前記電荷分散手段は、前記中間レジスタ部における少なくとも出力側に配置されると共に、前記幅方向に離間して複数配置され、電荷の転送を阻害する半導体領域又は絶縁領域からなる、
固体撮像装置。 - 電荷増倍型の固体撮像装置において、
入射光量に応じた電荷を生成する撮像領域と、
前記撮像領域からの電荷を受ける出力レジスタ部と、
前記出力レジスタ部からの電荷を増倍する増倍レジスタ部と、
前記増倍レジスタ部に入力される電荷を、転送方向と直交する幅方向に分散させる少なくとも1つの電荷分散手段と、
前記出力レジスタ部と前記増倍レジスタ部との間に配置された中間レジスタ部と、
を備え、
前記電荷分散手段は、前記中間レジスタ部における少なくとも出力側に配置されると共に、前記幅方向における電荷密度が低い位置に配置され、電荷誘導作用を高めるための電極を含む、
固体撮像装置。 - 電荷増倍型の固体撮像装置において、
入射光量に応じた電荷を生成する撮像領域と、
前記撮像領域からの電荷を受ける出力レジスタ部と、
前記出力レジスタ部からの電荷を増倍する増倍レジスタ部と、
前記増倍レジスタ部に入力される電荷を、転送方向と直交する幅方向に分散させる少なくとも1つの電荷分散手段と、
を備え、
前記電荷分散手段は、前記増倍レジスタ部における少なくとも入力側に配置されると共に、前記幅方向における電荷密度が低い位置に配置され、電荷誘導作用を高めるための電極を含む、
固体撮像装置。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009020200A JP5330001B2 (ja) | 2009-01-30 | 2009-01-30 | 固体撮像装置 |
US13/139,855 US8599296B2 (en) | 2009-01-30 | 2010-01-22 | Charge multiplying solid-state imaging device |
EP10735758.4A EP2385697B1 (en) | 2009-01-30 | 2010-01-22 | Solid-state imaging device |
PCT/JP2010/050819 WO2010087289A1 (ja) | 2009-01-30 | 2010-01-22 | 固体撮像装置 |
CN201080006073.1A CN102301695B (zh) | 2009-01-30 | 2010-01-22 | 固体摄像装置 |
KR1020117007771A KR101614567B1 (ko) | 2009-01-30 | 2010-01-22 | 고체 촬상 장치 |
TW099102303A TWI519159B (zh) | 2009-01-30 | 2010-01-27 | Solid-state imaging device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009020200A JP5330001B2 (ja) | 2009-01-30 | 2009-01-30 | 固体撮像装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010178179A JP2010178179A (ja) | 2010-08-12 |
JP5330001B2 true JP5330001B2 (ja) | 2013-10-30 |
Family
ID=42395551
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009020200A Expired - Fee Related JP5330001B2 (ja) | 2009-01-30 | 2009-01-30 | 固体撮像装置 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8599296B2 (ja) |
EP (1) | EP2385697B1 (ja) |
JP (1) | JP5330001B2 (ja) |
KR (1) | KR101614567B1 (ja) |
CN (1) | CN102301695B (ja) |
TW (1) | TWI519159B (ja) |
WO (1) | WO2010087289A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103698018B (zh) * | 2013-12-20 | 2016-06-29 | 北京理工大学 | 一种带电子倍增的铂硅红外焦平面探测器 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2441961A1 (fr) * | 1978-11-17 | 1980-06-13 | Thomson Csf | Filtre a transfert de charges electriques, programmable numeriquement |
GB2323471B (en) | 1997-03-22 | 2002-04-17 | Eev Ltd | CCd imagers |
US6278142B1 (en) * | 1999-08-30 | 2001-08-21 | Isetex, Inc | Semiconductor image intensifier |
EP1152469B1 (en) * | 2000-04-28 | 2015-12-02 | Texas Instruments Japan Limited | High dynamic range charge readout system |
US7420605B2 (en) * | 2001-01-18 | 2008-09-02 | E2V Technologies (Uk) Limited | Solid state imager arrangements |
GB2371403B (en) * | 2001-01-18 | 2005-07-27 | Marconi Applied Techn Ltd | Solid state imager arrangements |
JP2003009000A (ja) | 2001-06-21 | 2003-01-10 | Fuji Photo Film Co Ltd | 撮像装置 |
US20050029553A1 (en) * | 2003-08-04 | 2005-02-10 | Jaroslav Hynecek | Clocked barrier virtual phase charge coupled device image sensor |
GB2413007A (en) * | 2004-04-07 | 2005-10-12 | E2V Tech Uk Ltd | Multiplication register for amplifying signal charge |
GB0503827D0 (en) * | 2005-02-24 | 2005-04-06 | E2V Tech Uk Ltd | Enhanced spectral range imaging sensor |
JP4958602B2 (ja) * | 2007-03-30 | 2012-06-20 | 富士フイルム株式会社 | 撮像装置及びその画像合成方法 |
GB0717484D0 (en) * | 2007-09-07 | 2007-10-17 | E2V Tech Uk Ltd | Gain measurement method |
JP5270392B2 (ja) * | 2009-01-30 | 2013-08-21 | 浜松ホトニクス株式会社 | 固体撮像装置 |
JP5243984B2 (ja) * | 2009-01-30 | 2013-07-24 | 浜松ホトニクス株式会社 | 電子増倍機能内蔵型の固体撮像素子 |
JP5243983B2 (ja) * | 2009-01-30 | 2013-07-24 | 浜松ホトニクス株式会社 | 電子増倍機能内蔵型の固体撮像素子 |
JP5237843B2 (ja) * | 2009-01-30 | 2013-07-17 | 浜松ホトニクス株式会社 | 固体撮像装置 |
-
2009
- 2009-01-30 JP JP2009020200A patent/JP5330001B2/ja not_active Expired - Fee Related
-
2010
- 2010-01-22 KR KR1020117007771A patent/KR101614567B1/ko active IP Right Grant
- 2010-01-22 EP EP10735758.4A patent/EP2385697B1/en not_active Not-in-force
- 2010-01-22 WO PCT/JP2010/050819 patent/WO2010087289A1/ja active Application Filing
- 2010-01-22 US US13/139,855 patent/US8599296B2/en not_active Expired - Fee Related
- 2010-01-22 CN CN201080006073.1A patent/CN102301695B/zh not_active Expired - Fee Related
- 2010-01-27 TW TW099102303A patent/TWI519159B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR101614567B1 (ko) | 2016-04-21 |
CN102301695A (zh) | 2011-12-28 |
CN102301695B (zh) | 2015-02-11 |
US20110254989A1 (en) | 2011-10-20 |
US8599296B2 (en) | 2013-12-03 |
EP2385697A4 (en) | 2013-02-20 |
WO2010087289A1 (ja) | 2010-08-05 |
JP2010178179A (ja) | 2010-08-12 |
EP2385697B1 (en) | 2017-03-01 |
TWI519159B (zh) | 2016-01-21 |
TW201034455A (en) | 2010-09-16 |
KR20110105763A (ko) | 2011-09-27 |
EP2385697A1 (en) | 2011-11-09 |
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