JP5270392B2 - 固体撮像装置 - Google Patents
固体撮像装置 Download PDFInfo
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- JP5270392B2 JP5270392B2 JP2009020453A JP2009020453A JP5270392B2 JP 5270392 B2 JP5270392 B2 JP 5270392B2 JP 2009020453 A JP2009020453 A JP 2009020453A JP 2009020453 A JP2009020453 A JP 2009020453A JP 5270392 B2 JP5270392 B2 JP 5270392B2
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- 238000003384 imaging method Methods 0.000 title claims description 120
- 238000007599 discharging Methods 0.000 claims description 6
- 101000666890 Aedes aegypti Vitellogenin-A1 Proteins 0.000 description 7
- 101100466647 Schizosaccharomyces pombe (strain 972 / ATCC 24843) pvg2 gene Proteins 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000000265 homogenisation Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14806—Structural or functional details thereof
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/713—Transfer or readout registers; Split readout registers or multiple readout registers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14887—Blooming suppression
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76816—Output structures
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/72—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors using frame transfer [FT]
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Signal Processing (AREA)
- Multimedia (AREA)
- Ceramic Engineering (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Description
18…増倍レジスタ、20…第1のアンプ、22…第2のアンプ、24…オーバースキャンエレメント、26a ,26b…オーバーフロードレイン、28…電荷蓄積領域、3…p型基板、32…p型エピタキシャル層、34…n型領域、36…電極、38…チャネルストップ層、40…誘電体層、42a,42b…オーバーフローゲート、44…誘電体層、46…n−型半導体領域、P1,P2,P3,PM1,PM2,PM3,PDC,PVG1,PVG2…端子、VG1…第1のバルブゲート電極、VG2…第2のバルブゲート電極、10A…固体撮像装置、12A…撮像領域、121…第1のエリア,122…第2のエリア、14A…出力レジスタ、141…第1の出力レジスタ、142…第2の出力レジスタ、161…第1のコーナーレジスタ、162…第2のコーナーレジスタ、181…第1の増倍レジスタ、182…第2の増倍レジスタ、20A…第1のアンプ、22A…第2のアンプ、P11,P21,P31,P12,P22,P32,PM11,PM21,PM31,PM12,PM22,PM32,PDC1,PDC2…端子。
Claims (5)
- 撮像領域と、
前記撮像領域から転送される電荷を受けて該電荷を転送する出力レジスタであって、一方向と該一方向と逆の他方向とに選択的に電荷を転送可能な該出力レジスタと、
前記出力レジスタから前記一方向に転送される電荷を転送するコーナーレジスタと、
前記コーナーレジスタからの電荷を受けて増倍された電荷を生成する増倍レジスタと、
前記増倍レジスタからの増倍された電荷に基づく信号を出力する第1のアンプと、
前記出力レジスタによって前記他方向に転送される電荷に基づく信号を生成する第2のアンプと、
前記第2のアンプのみから信号を出力する場合に、前記出力レジスタと前記コーナーレジスタとの間での電荷の転送を妨げるためのバルブゲート電極と、
を備える固体撮像装置。 - 前記コーナーレジスタ及び前記増倍レジスタに蓄積された電荷を排出するためのオーバーフロードレインを更に備える、請求項1に記載の固体撮像装置。
- 前記出力レジスタから前記他方向に転送される電荷を前記第2のアンプに転送するためのレジスタであるオーバースキャンエレメントと、
前記第1のアンプのみから信号を出力する場合に、前記出力レジスタと前記オーバースキャンエレメントとの間での電荷の転送を妨げるための別のバルブゲート電極と、
を更に備える、請求項1又は2に記載の固体撮像装置。 - 撮像領域と、
前記撮像領域から転送される電荷を受けて該電荷を転送する出力レジスタであって、一方向と該一方向と逆の他方向とに選択的に電荷を転送可能な該出力レジスタと、
前記出力レジスタから前記一方向に転送される電荷を転送する第1のコーナーレジスタと、
前記第1のコーナーレジスタからの電荷を受けて増倍された電荷を生成する第1の増倍レジスタと、
前記第1の増倍レジスタからの増倍された電荷に基づく信号を生成する第1のアンプと、
前記出力レジスタから前記他方向に転送される電荷を転送する第2のコーナーレジスタと、
前記第2のコーナーレジスタからの電荷を受けて増倍された電荷を生成する第2の増倍レジスタと、
前記第2の増倍レジスタからの増倍された電荷に基づく信号を生成する第2のアンプと、
前記第2のアンプのみから信号を出力する場合に、前記出力レジスタと前記第1のコーナーレジスタとの間での電荷の転送を妨げるための第1のバルブゲート電極と、
前記第1のアンプのみから信号を出力する場合に、前記出力レジスタと前記第2のコーナーレジスタとの間での電荷の転送を妨げるための第2のバルブゲート電極と、
を備える固体撮像装置。 - 前記第1及び第2のコーナーレジスタ及び前記第1及び第2の増倍レジスタに蓄積された電荷を放出するためのオーバーフロードレインを更に備える、請求項4に記載の固体撮像装置。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009020453A JP5270392B2 (ja) | 2009-01-30 | 2009-01-30 | 固体撮像装置 |
CN201080001167XA CN101960597B (zh) | 2009-01-30 | 2010-01-22 | 固体摄像装置 |
US12/920,114 US8552352B2 (en) | 2009-01-30 | 2010-01-22 | Solid-state imaging device including corner register |
EP10735748.5A EP2249390B1 (en) | 2009-01-30 | 2010-01-22 | Solid-state imaging device |
KR1020107019369A KR101066341B1 (ko) | 2009-01-30 | 2010-01-22 | 고체 촬상 장치 |
PCT/JP2010/050778 WO2010087279A1 (ja) | 2009-01-30 | 2010-01-22 | 固体撮像装置 |
TW099102710A TWI499294B (zh) | 2009-01-30 | 2010-01-29 | Solid state camera device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009020453A JP5270392B2 (ja) | 2009-01-30 | 2009-01-30 | 固体撮像装置 |
Publications (3)
Publication Number | Publication Date |
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JP2010177564A JP2010177564A (ja) | 2010-08-12 |
JP2010177564A5 JP2010177564A5 (ja) | 2011-12-08 |
JP5270392B2 true JP5270392B2 (ja) | 2013-08-21 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2009020453A Active JP5270392B2 (ja) | 2009-01-30 | 2009-01-30 | 固体撮像装置 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8552352B2 (ja) |
EP (1) | EP2249390B1 (ja) |
JP (1) | JP5270392B2 (ja) |
KR (1) | KR101066341B1 (ja) |
CN (1) | CN101960597B (ja) |
TW (1) | TWI499294B (ja) |
WO (1) | WO2010087279A1 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5330001B2 (ja) * | 2009-01-30 | 2013-10-30 | 浜松ホトニクス株式会社 | 固体撮像装置 |
JP5243983B2 (ja) * | 2009-01-30 | 2013-07-24 | 浜松ホトニクス株式会社 | 電子増倍機能内蔵型の固体撮像素子 |
US8773563B2 (en) | 2011-05-25 | 2014-07-08 | Truesense Imaging, Inc. | Multi-purpose architecture for CCD image sensors |
US8411189B2 (en) * | 2011-05-25 | 2013-04-02 | Truesense Imaging, Inc. | Multi-purpose architecture for CCD image sensors |
US8800130B2 (en) | 2011-05-25 | 2014-08-12 | Truesense Imaging, Inc. | Methods for producing image sensors having multi-purpose architecture |
CN110335882B (zh) * | 2019-06-25 | 2021-05-07 | 中国电子科技集团公司第四十四研究所 | 一种可提高帧转移ccd响应度像元结构 |
Family Cites Families (21)
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DE69231482T2 (de) | 1991-07-11 | 2001-05-10 | Texas Instruments Inc | Für einen CCD-Bildsensor mit kleiner Bildpunktgrösse geeigneter Ladungsvervielfachungsdetektor (CMD) |
JPH0530432A (ja) * | 1991-07-19 | 1993-02-05 | Sharp Corp | 固体撮像装置 |
GB2323471B (en) * | 1997-03-22 | 2002-04-17 | Eev Ltd | CCd imagers |
US6278142B1 (en) | 1999-08-30 | 2001-08-21 | Isetex, Inc | Semiconductor image intensifier |
EP1152469B1 (en) | 2000-04-28 | 2015-12-02 | Texas Instruments Japan Limited | High dynamic range charge readout system |
US6509616B2 (en) * | 2000-09-29 | 2003-01-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and its manufacturing method |
JP2002218327A (ja) * | 2001-01-15 | 2002-08-02 | Sony Corp | 固体撮像装置およびカメラシステム |
US7420605B2 (en) * | 2001-01-18 | 2008-09-02 | E2V Technologies (Uk) Limited | Solid state imager arrangements |
JP2002325720A (ja) * | 2001-04-27 | 2002-11-12 | Fuji Photo Film Co Ltd | 内視鏡装置 |
US7190400B2 (en) | 2001-06-04 | 2007-03-13 | Texas Instruments Incorporated | Charge multiplier with logarithmic dynamic range compression implemented in charge domain |
US7184085B2 (en) * | 2001-08-20 | 2007-02-27 | Fuji Photo Film Co., Ltd. | Charge multiplying solid-state electronic image sensing device and method of controlling same |
JP2003158679A (ja) * | 2001-08-20 | 2003-05-30 | Fuji Photo Film Co Ltd | 電荷増倍型固体電子撮像装置およびその制御方法 |
US6784412B2 (en) | 2001-08-29 | 2004-08-31 | Texas Instruments Incorporated | Compact image sensor layout with charge multiplying register |
AU2003214199A1 (en) * | 2002-03-18 | 2003-10-08 | Massachusetts Institute Of Technology | Event-driven charge-coupled device design and applications therefor |
JP3689866B2 (ja) | 2002-05-30 | 2005-08-31 | 日本テキサス・インスツルメンツ株式会社 | Cmd及びcmd搭載ccd装置 |
US20050029553A1 (en) | 2003-08-04 | 2005-02-10 | Jaroslav Hynecek | Clocked barrier virtual phase charge coupled device image sensor |
GB2413007A (en) | 2004-04-07 | 2005-10-12 | E2V Tech Uk Ltd | Multiplication register for amplifying signal charge |
US7522205B2 (en) | 2004-09-10 | 2009-04-21 | Eastman Kodak Company | Image sensor with charge multiplication |
JP4772337B2 (ja) * | 2005-02-17 | 2011-09-14 | 浜松ホトニクス株式会社 | 撮像装置、撮像システム、及び共焦点顕微鏡 |
GB2424758A (en) | 2005-03-31 | 2006-10-04 | E2V Tech | CCD device |
GB2431538B (en) | 2005-10-24 | 2010-12-22 | E2V Tech | CCD device |
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2009
- 2009-01-30 JP JP2009020453A patent/JP5270392B2/ja active Active
-
2010
- 2010-01-22 EP EP10735748.5A patent/EP2249390B1/en active Active
- 2010-01-22 US US12/920,114 patent/US8552352B2/en active Active
- 2010-01-22 CN CN201080001167XA patent/CN101960597B/zh active Active
- 2010-01-22 WO PCT/JP2010/050778 patent/WO2010087279A1/ja active Application Filing
- 2010-01-22 KR KR1020107019369A patent/KR101066341B1/ko active IP Right Grant
- 2010-01-29 TW TW099102710A patent/TWI499294B/zh active
Also Published As
Publication number | Publication date |
---|---|
EP2249390B1 (en) | 2013-10-09 |
KR20100107067A (ko) | 2010-10-04 |
WO2010087279A1 (ja) | 2010-08-05 |
TW201119373A (en) | 2011-06-01 |
CN101960597A (zh) | 2011-01-26 |
EP2249390A4 (en) | 2012-03-07 |
TWI499294B (zh) | 2015-09-01 |
US8552352B2 (en) | 2013-10-08 |
CN101960597B (zh) | 2012-07-04 |
KR101066341B1 (ko) | 2011-09-20 |
JP2010177564A (ja) | 2010-08-12 |
US20110024606A1 (en) | 2011-02-03 |
EP2249390A1 (en) | 2010-11-10 |
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