JP4442608B2 - 固体撮像装置、撮像装置並びに撮像素子 - Google Patents
固体撮像装置、撮像装置並びに撮像素子 Download PDFInfo
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- JP4442608B2 JP4442608B2 JP2006529237A JP2006529237A JP4442608B2 JP 4442608 B2 JP4442608 B2 JP 4442608B2 JP 2006529237 A JP2006529237 A JP 2006529237A JP 2006529237 A JP2006529237 A JP 2006529237A JP 4442608 B2 JP4442608 B2 JP 4442608B2
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- H—ELECTRICITY
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- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
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- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/72—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors using frame transfer [FT]
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14831—Area CCD imagers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14831—Area CCD imagers
- H01L27/1485—Frame transfer
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Description
さらに、撮像信号温度変動抑止手段は、抵抗値が変更可能な抵抗値制御型抵抗素子を有し、固体撮像素子の素子温度の結果に基づいて抵抗値制御型抵抗素子の抵抗値を変化させて、撮像信号温度変動抑止手段の増幅機能の増幅率を調整することで電荷電圧変換手段の変換利得を電気的に調整する。
また、抵抗値制御型抵抗素子を備えた撮像信号温度変動抑止手段よりも電荷増倍手段の近くに配設されている温度センサにより固体撮像素子の素子温度が的確に検出されるので、固体撮像素子の素子温度の変化に起因して生じる撮像信号の信号強度の変動を的確に抑えることができる。
1A … (被写体像の)投影面
8 … 光電変換部
9 … CCDセル
10 … CCDセル
11 … 出力レジスタ
12 … 電荷電圧変換部
13 … 電荷増倍部
13A … 増倍レジスタ
14,17 … 撮像信号温度変動抑止部
15 … 温度センサ
φ3 … 駆動電圧
Claims (8)
- 撮像を行う固体撮像装置において、固体撮像素子と電荷増倍手段と撮像信号温度変動抑止手段とを備えるとともに、前記固体撮像素子は、被写体像の投影面において2次元アレイ配置された複数の光電変換手段と、各光電変換手段により光電変換されて検出された信号電荷を転送する電荷転送手段と、電荷転送手段から転送された信号電荷を電圧信号に変換し撮像信号として出力する電荷電圧変換手段と、固体撮像素子の素子温度を検出する温度センサとを備え、前記電荷増倍手段は信号電荷が高電界領域を通過する間に起こす衝突電離現象により信号電荷を増倍し、その電荷増倍手段を前記電荷電圧変換手段の前段側に配設し、前記撮像信号温度変動抑止手段は、前記温度センサによって検出された固体撮像素子の素子温度の変化に応じて電荷電圧変換手段の変換利得を電気的に調整して固体撮像素子の素子温度の変化に起因して生じる電荷増倍手段の電荷増倍利得の変動を抑えるとともに、抵抗値が変更可能な抵抗値制御型抵抗素子を有し、固体撮像素子の素子温度の結果に基づいて抵抗値制御型抵抗素子の抵抗値を変化させて、撮像信号温度変動抑止手段の増幅機能の増幅率を調整することで電荷電圧変換手段の変換利得を電気的に調整して、固体撮像素子の素子温度の変化に起因して生じる電荷増倍手段の電荷増倍利得の変動を抑え、前記温度センサを、前記抵抗値制御型抵抗素子を備えた撮像信号温度変動抑止手段よりも電荷増倍手段の近くに配設して、前記抵抗値制御型抵抗素子を備えた撮像信号温度変動抑止手段を電荷増倍手段から距離を離して配設し、前記抵抗値制御型抵抗素子を備えた撮像信号温度変動抑止手段、前記温度センサ、電荷増倍手段の順に配設し、前記温度センサの出力が前記抵抗値制御型抵抗素子の抵抗値を制御するように両者を接続し、前記撮像信号温度変動抑止手段と前記電荷増倍手段とを前記電荷電圧変換手段とを介して接続することを特徴とする固体撮像装置。
- 請求項1に記載の固体撮像装置において、前記電荷増倍手段は、信号電荷を順次に転送する複数段の増倍レジスタからなり、各増倍レジスタは、駆動電圧の印加に伴って増倍レジスタの要素内に電荷増倍用の高電界領域を生成し、信号電荷を転送する際に電荷増倍用の高電界領域を通過させて、印加される駆動電圧の電圧値の変化により電荷増倍用の高電界領域の電界強度が変化するように構成されており、固体撮像素子の素子温度の変化に応じて駆動電圧の電圧値を変化させることで電荷増倍手段の電荷増倍利得を電気的に制御することを特徴とする固体撮像装置。
- 請求項1〜2に記載の固体撮像装置において、前記固体撮像素子と前記電荷増倍手段とを別体で配設することを特徴とする固体撮像装置。
- 請求項1〜3に記載の固体撮像装置において、前記温度センサを固体撮像素子自体に配設し、前記温度センサで検出された固体撮像素子の素子温度にしたがって撮像信号温度変動抑止手段を作動させることを特徴とする固体撮像装置。
- 請求項1〜4に記載の固体撮像装置において、前記温度センサは、サーミスタであることを特徴とする固体撮像装置。
- 請求項1〜4に記載の固体撮像装置において、前記温度センサは、金属細線を用いた測温体であることを特徴とする固体撮像装置。
- 請求項1〜6に記載の固体撮像装置において、前記各光電変換手段ごとに、各光電変換手段により光電変換されて検出される信号電荷を蓄積する複数の信号電荷蓄積手段をそれぞれ付設することを特徴とする固体撮像装置。
- 請求項1〜7に記載の固体撮像装置を備える撮像装置。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
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JP2004211478 | 2004-07-20 | ||
JP2004211478 | 2004-07-20 | ||
JP2004240722 | 2004-08-20 | ||
JP2004240722 | 2004-08-20 | ||
PCT/JP2005/013302 WO2006009164A1 (ja) | 2004-07-20 | 2005-07-20 | 固体撮像装置、撮像装置並びに撮像素子 |
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JPWO2006009164A1 JPWO2006009164A1 (ja) | 2008-07-31 |
JP4442608B2 true JP4442608B2 (ja) | 2010-03-31 |
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JP2006529237A Expired - Fee Related JP4442608B2 (ja) | 2004-07-20 | 2005-07-20 | 固体撮像装置、撮像装置並びに撮像素子 |
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US (1) | US7692707B2 (ja) |
EP (1) | EP1781025A1 (ja) |
JP (1) | JP4442608B2 (ja) |
KR (1) | KR100910501B1 (ja) |
WO (1) | WO2006009164A1 (ja) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2007259135A (ja) * | 2006-03-23 | 2007-10-04 | Fujifilm Corp | 撮像装置およびその駆動方法 |
JP4932578B2 (ja) * | 2006-04-27 | 2012-05-16 | 株式会社日立国際電気 | 撮像装置の感度補正方法および撮像装置 |
KR100849475B1 (ko) * | 2006-04-27 | 2008-07-30 | 가부시키가이샤 히다치 고쿠사이 덴키 | 촬상장치 및 촬상장치의 감도 보정방법 |
JP4759444B2 (ja) * | 2006-06-05 | 2011-08-31 | 富士フイルム株式会社 | Ccd型固体撮像素子の駆動方法、固体撮像装置 |
JP4857996B2 (ja) * | 2006-08-02 | 2012-01-18 | ソニー株式会社 | 撮像装置 |
JP5037078B2 (ja) * | 2006-09-15 | 2012-09-26 | 富士フイルム株式会社 | 固体撮像素子およびその駆動方法 |
KR20080064031A (ko) | 2007-01-03 | 2008-07-08 | 삼성전자주식회사 | 온도센서를 구비한 이미지 센서 및 그것의 구동 방법 |
JP5237843B2 (ja) | 2009-01-30 | 2013-07-17 | 浜松ホトニクス株式会社 | 固体撮像装置 |
JP5237844B2 (ja) * | 2009-01-30 | 2013-07-17 | 浜松ホトニクス株式会社 | 固体撮像装置 |
US8264486B2 (en) * | 2009-07-24 | 2012-09-11 | The United States Of America As Represented By The Secretary Of The Navy | Real-time high-speed three dimensional modeling system |
JP5403369B2 (ja) * | 2010-03-31 | 2014-01-29 | ソニー株式会社 | 固体撮像素子および駆動方法、並びに電子機器 |
US8847285B2 (en) | 2011-09-26 | 2014-09-30 | Semiconductor Components Industries, Llc | Depleted charge-multiplying CCD image sensor |
JP6162972B2 (ja) * | 2013-02-14 | 2017-07-12 | 日本放送協会 | 画素周辺記録型撮像素子用駆動装置 |
US9282309B1 (en) | 2013-12-22 | 2016-03-08 | Jasmin Cosic | Methods, systems and apparatuses for multi-directional still pictures and/or multi-directional motion pictures |
US10102226B1 (en) | 2015-06-08 | 2018-10-16 | Jasmin Cosic | Optical devices and apparatuses for capturing, structuring, and using interlinked multi-directional still pictures and/or multi-directional motion pictures |
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JP3483261B2 (ja) | 1992-07-10 | 2004-01-06 | テキサス インスツルメンツ インコーポレイテツド | イメージセンサ |
GB2323471B (en) | 1997-03-22 | 2002-04-17 | Eev Ltd | CCd imagers |
GB9828166D0 (en) * | 1998-12-22 | 1999-02-17 | Eev Ltd | Imaging apparatus |
JP2001251556A (ja) * | 2000-03-08 | 2001-09-14 | Minolta Co Ltd | 固体撮像装置 |
JP3704052B2 (ja) * | 2000-03-28 | 2005-10-05 | リンク・リサーチ株式会社 | 高速撮像素子及び高速撮影装置 |
US7139023B2 (en) * | 2001-03-12 | 2006-11-21 | Texas Instruments Incorporated | High dynamic range charge readout system |
JP2002290836A (ja) | 2001-03-23 | 2002-10-04 | Sanyo Electric Co Ltd | 固体撮像素子及びその駆動方法 |
JP2002330352A (ja) * | 2001-04-27 | 2002-11-15 | Fuji Photo Film Co Ltd | 撮像装置 |
US7190400B2 (en) * | 2001-06-04 | 2007-03-13 | Texas Instruments Incorporated | Charge multiplier with logarithmic dynamic range compression implemented in charge domain |
US7184085B2 (en) * | 2001-08-20 | 2007-02-27 | Fuji Photo Film Co., Ltd. | Charge multiplying solid-state electronic image sensing device and method of controlling same |
US6784412B2 (en) * | 2001-08-29 | 2004-08-31 | Texas Instruments Incorporated | Compact image sensor layout with charge multiplying register |
-
2005
- 2005-07-20 US US11/632,964 patent/US7692707B2/en not_active Expired - Fee Related
- 2005-07-20 EP EP05766453A patent/EP1781025A1/en not_active Withdrawn
- 2005-07-20 JP JP2006529237A patent/JP4442608B2/ja not_active Expired - Fee Related
- 2005-07-20 KR KR1020077001464A patent/KR100910501B1/ko not_active IP Right Cessation
- 2005-07-20 WO PCT/JP2005/013302 patent/WO2006009164A1/ja active Application Filing
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US20080303933A1 (en) | 2008-12-11 |
JPWO2006009164A1 (ja) | 2008-07-31 |
EP1781025A1 (en) | 2007-05-02 |
WO2006009164A1 (ja) | 2006-01-26 |
US7692707B2 (en) | 2010-04-06 |
KR20070036779A (ko) | 2007-04-03 |
KR100910501B1 (ko) | 2009-07-31 |
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