JP2010147502A - 静電チャック - Google Patents

静電チャック Download PDF

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Publication number
JP2010147502A
JP2010147502A JP2010056825A JP2010056825A JP2010147502A JP 2010147502 A JP2010147502 A JP 2010147502A JP 2010056825 A JP2010056825 A JP 2010056825A JP 2010056825 A JP2010056825 A JP 2010056825A JP 2010147502 A JP2010147502 A JP 2010147502A
Authority
JP
Japan
Prior art keywords
electrostatic chuck
wafer
protrusion
temperature
protrusions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2010056825A
Other languages
English (en)
Japanese (ja)
Inventor
Shinya Nishimoto
伸也 西本
Hiroyuki Nakayama
博之 中山
Hidetoshi Kimura
英利 木村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Sumitomo Osaka Cement Co Ltd
Original Assignee
Tokyo Electron Ltd
Sumitomo Osaka Cement Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd, Sumitomo Osaka Cement Co Ltd filed Critical Tokyo Electron Ltd
Priority to JP2010056825A priority Critical patent/JP2010147502A/ja
Publication of JP2010147502A publication Critical patent/JP2010147502A/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2010056825A 2003-12-05 2010-03-13 静電チャック Pending JP2010147502A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010056825A JP2010147502A (ja) 2003-12-05 2010-03-13 静電チャック

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003408224 2003-12-05
JP2010056825A JP2010147502A (ja) 2003-12-05 2010-03-13 静電チャック

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2004351448A Division JP4674792B2 (ja) 2003-12-05 2004-12-03 静電チャック

Publications (1)

Publication Number Publication Date
JP2010147502A true JP2010147502A (ja) 2010-07-01

Family

ID=34779858

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2010056825A Pending JP2010147502A (ja) 2003-12-05 2010-03-13 静電チャック
JP2010056826A Expired - Lifetime JP4909424B2 (ja) 2003-12-05 2010-03-13 静電チャック

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2010056826A Expired - Lifetime JP4909424B2 (ja) 2003-12-05 2010-03-13 静電チャック

Country Status (5)

Country Link
US (1) US7663860B2 (enExample)
JP (2) JP2010147502A (enExample)
KR (1) KR100666039B1 (enExample)
CN (1) CN1310303C (enExample)
TW (1) TW200524075A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103038874A (zh) * 2010-08-11 2013-04-10 Toto株式会社 静电吸盘
KR20150055551A (ko) * 2013-11-13 2015-05-21 도쿄엘렉트론가부시키가이샤 접합 장치 및 접합 시스템
CN107078086A (zh) * 2014-02-07 2017-08-18 恩特格里斯公司 静电夹具以及制造其之方法
CN110720137A (zh) * 2017-08-29 2020-01-21 应用材料公司 具备吸附力控制的静电吸附基板支撑件

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7663860B2 (en) 2003-12-05 2010-02-16 Tokyo Electron Limited Electrostatic chuck
US20060238954A1 (en) * 2005-04-21 2006-10-26 Applied Materials, Inc., A Delaware Corporation Electrostatic chuck for track thermal plates
JP4657824B2 (ja) * 2005-06-17 2011-03-23 東京エレクトロン株式会社 基板載置台、基板処理装置および基板載置台の製造方法
US7248457B2 (en) * 2005-11-15 2007-07-24 Toto Ltd. Electrostatic chuck
CN1994839B (zh) * 2006-01-05 2012-07-18 财团法人工业技术研究院 静电吸附装置
JP5069452B2 (ja) * 2006-04-27 2012-11-07 アプライド マテリアルズ インコーポレイテッド 二重温度帯を有する静電チャックをもつ基板支持体
US8226769B2 (en) 2006-04-27 2012-07-24 Applied Materials, Inc. Substrate support with electrostatic chuck having dual temperature zones
JP5032818B2 (ja) * 2006-09-29 2012-09-26 新光電気工業株式会社 静電チャック
WO2008075340A1 (en) * 2006-12-18 2008-06-26 Camtek Ltd. A chuck and a method for supporting an object
CN101221893B (zh) * 2007-01-12 2010-05-19 北京北方微电子基地设备工艺研究中心有限责任公司 一种促进半导体晶片上静电电荷消散的方法
JP4864757B2 (ja) * 2007-02-14 2012-02-01 東京エレクトロン株式会社 基板載置台及びその表面処理方法
US20080225261A1 (en) * 2007-03-13 2008-09-18 Noriyuki Hirayanagi Exposure apparatus and device manufacturing method
KR100855002B1 (ko) * 2007-05-23 2008-08-28 삼성전자주식회사 플라즈마 이온 주입시스템
KR100938874B1 (ko) * 2007-07-24 2010-01-27 주식회사 에스에프에이 유리기판 지지용 서셉터 및 그 제조 방법, 그리고 그유리기판 지지용 서셉터를 구비한 화학 기상 증착장치
US7944677B2 (en) * 2007-09-11 2011-05-17 Canon Anelva Corporation Electrostatic chuck
KR101007534B1 (ko) * 2008-11-05 2011-01-14 주식회사 테스 반도체 제조장치 및 이를 이용한 실리콘 산화막 건식 식각 방법
US20100116788A1 (en) * 2008-11-12 2010-05-13 Lam Research Corporation Substrate temperature control by using liquid controlled multizone substrate support
CN102859645B (zh) 2010-02-24 2016-05-04 威科仪器有限公司 带温度分布控制的加工方法和装置
JP5510411B2 (ja) * 2010-08-11 2014-06-04 Ｔｏｔｏ株式会社 静電チャック及び静電チャックの製造方法
JP5993568B2 (ja) * 2011-11-09 2016-09-14 東京エレクトロン株式会社 基板載置システム、基板処理装置、静電チャック及び基板冷却方法
JP6010433B2 (ja) * 2012-11-15 2016-10-19 東京エレクトロン株式会社 基板載置台および基板処理装置
US9395404B2 (en) * 2012-12-14 2016-07-19 Infineon Technologies Ag Method for testing semiconductor chips or semiconductor chip modules
KR102112368B1 (ko) * 2013-02-28 2020-05-18 도쿄엘렉트론가부시키가이샤 탑재대 및 플라즈마 처리 장치
JP6173936B2 (ja) * 2013-02-28 2017-08-02 東京エレクトロン株式会社 載置台及びプラズマ処理装置
US9273413B2 (en) 2013-03-14 2016-03-01 Veeco Instruments Inc. Wafer carrier with temperature distribution control
JP6119430B2 (ja) 2013-05-31 2017-04-26 住友大阪セメント株式会社 静電チャック装置
KR20150138959A (ko) * 2014-05-30 2015-12-11 (주)아이씨디 챔버 내 피처리 대상물 접촉구조, 정전 척 및 그 제조방법
KR20160015510A (ko) * 2014-07-30 2016-02-15 삼성전자주식회사 정전척 어셈블리, 이를 구비하는 반도체 제조장치, 및 이를 이용한 플라즈마 처리방법
JP6168162B2 (ja) * 2014-09-30 2017-07-26 住友大阪セメント株式会社 静電チャック装置
JP6149945B2 (ja) * 2014-09-30 2017-06-21 住友大阪セメント株式会社 静電チャック装置
US20160230269A1 (en) * 2015-02-06 2016-08-11 Applied Materials, Inc. Radially outward pad design for electrostatic chuck surface
KR20180011119A (ko) * 2015-05-22 2018-01-31 어플라이드 머티어리얼스, 인코포레이티드 방위방향으로 튜닝가능한 다중-구역 정전 척
CN108780773B (zh) * 2016-02-10 2022-10-21 恩特格里斯公司 具有改善粒子性能的晶片接触表面突部轮廓
JP6183567B1 (ja) * 2016-05-13 2017-08-23 Toto株式会社 静電チャック
JP6215426B1 (ja) * 2016-09-21 2017-10-18 オリジン電気株式会社 加熱装置及び板状部材の製造方法
US20180148835A1 (en) 2016-11-29 2018-05-31 Lam Research Corporation Substrate support with varying depths of areas between mesas and corresponding temperature dependent method of fabricating
KR102411272B1 (ko) * 2018-03-26 2022-06-22 엔지케이 인슐레이터 엘티디 정전척 히터
US11133212B2 (en) * 2018-05-16 2021-09-28 Applied Materials, Inc. High temperature electrostatic chuck
JP7248608B2 (ja) 2020-02-04 2023-03-29 日本碍子株式会社 静電チャックヒータ
US11929278B2 (en) 2021-05-19 2024-03-12 Applied Materials, Inc. Low impedance current path for edge non-uniformity tuning
CN114678316A (zh) * 2021-12-10 2022-06-28 北京华卓精科科技股份有限公司 控制颗粒污染的晶圆吸附构件及装置
US12412769B2 (en) * 2023-05-16 2025-09-09 Applied Materials, Inc. Electrostatic chucks with hybrid pucks to improve thermal performance and leakage current stability

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1041378A (ja) * 1996-04-25 1998-02-13 Applied Materials Inc 温度フィードバックと接触面積が小さくされた圧力ゾーンを有する基板支持体
JP2002009064A (ja) * 2000-06-21 2002-01-11 Hitachi Ltd 試料の処理装置及び試料の処理方法
JP2003086664A (ja) * 2001-09-13 2003-03-20 Sumitomo Osaka Cement Co Ltd 吸着固定装置及びその製造方法

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JPH056933A (ja) 1991-06-27 1993-01-14 Kyocera Corp セラミツク製静電チヤツク
JPH0718438A (ja) * 1993-06-17 1995-01-20 Anelva Corp 静電チャック装置
JPH07153825A (ja) * 1993-11-29 1995-06-16 Toto Ltd 静電チャック及びこの静電チャックを用いた被吸着体の処理方法
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JP2000340640A (ja) 1999-05-31 2000-12-08 Toto Ltd 非接触型静電吸着装置
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JP4387563B2 (ja) * 2000-06-05 2009-12-16 住友大阪セメント株式会社 サセプタ及びサセプタの製造方法
JP4697833B2 (ja) 2000-06-14 2011-06-08 キヤノンアネルバ株式会社 静電吸着機構及び表面処理装置
JP2002009139A (ja) * 2000-06-20 2002-01-11 Nikon Corp 静電チャック
JPWO2002043441A1 (ja) * 2000-11-24 2004-04-02 イビデン株式会社 セラミックヒータ、および、セラミックヒータの製造方法
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JPH1041378A (ja) * 1996-04-25 1998-02-13 Applied Materials Inc 温度フィードバックと接触面積が小さくされた圧力ゾーンを有する基板支持体
JP2002009064A (ja) * 2000-06-21 2002-01-11 Hitachi Ltd 試料の処理装置及び試料の処理方法
JP2003086664A (ja) * 2001-09-13 2003-03-20 Sumitomo Osaka Cement Co Ltd 吸着固定装置及びその製造方法

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103038874A (zh) * 2010-08-11 2013-04-10 Toto株式会社 静电吸盘
KR20150055551A (ko) * 2013-11-13 2015-05-21 도쿄엘렉트론가부시키가이샤 접합 장치 및 접합 시스템
KR102316311B1 (ko) * 2013-11-13 2021-10-25 도쿄엘렉트론가부시키가이샤 접합 장치 및 접합 시스템
CN107078086A (zh) * 2014-02-07 2017-08-18 恩特格里斯公司 静电夹具以及制造其之方法
US11114327B2 (en) 2017-08-29 2021-09-07 Applied Materials, Inc. ESC substrate support with chucking force control
JP2020521321A (ja) * 2017-08-29 2020-07-16 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ チャック力制御を有する静電チャック基板支持体
KR20200008033A (ko) * 2017-08-29 2020-01-22 어플라이드 머티어리얼스, 인코포레이티드 척킹력 제어를 이용한 esc 기판 지지
CN110720137A (zh) * 2017-08-29 2020-01-21 应用材料公司 具备吸附力控制的静电吸附基板支撑件
JP7107972B2 (ja) 2017-08-29 2022-07-27 アプライド マテリアルズ インコーポレイテッド チャック力制御を有する静電チャック基板支持体
KR102438574B1 (ko) * 2017-08-29 2022-08-30 어플라이드 머티어리얼스, 인코포레이티드 척킹력 제어를 이용한 esc 기판 지지
KR20220123483A (ko) * 2017-08-29 2022-09-06 어플라이드 머티어리얼스, 인코포레이티드 척킹력 제어를 이용한 esc 기판 지지
CN110720137B (zh) * 2017-08-29 2023-08-15 应用材料公司 具备吸附力控制的静电吸附基板支撑件
KR102585068B1 (ko) * 2017-08-29 2023-10-04 어플라이드 머티어리얼스, 인코포레이티드 척킹력 제어를 이용한 esc 기판 지지

Also Published As

Publication number Publication date
KR100666039B1 (ko) 2007-01-10
CN1310303C (zh) 2007-04-11
US20050207088A1 (en) 2005-09-22
US7663860B2 (en) 2010-02-16
JP4909424B2 (ja) 2012-04-04
JP2010135851A (ja) 2010-06-17
KR20050054831A (ko) 2005-06-10
TWI358785B (enExample) 2012-02-21
CN1624892A (zh) 2005-06-08
TW200524075A (en) 2005-07-16

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