JP2010141294A - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法 Download PDFInfo
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- JP2010141294A JP2010141294A JP2009241235A JP2009241235A JP2010141294A JP 2010141294 A JP2010141294 A JP 2010141294A JP 2009241235 A JP2009241235 A JP 2009241235A JP 2009241235 A JP2009241235 A JP 2009241235A JP 2010141294 A JP2010141294 A JP 2010141294A
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Abstract
【解決手段】第1の基板上に第1の分離層と第1の半導体素子層を形成し、第1の半導体素子層に第1のレーザビームを照射することにより第1の開口部を形成し、第1の開口部に第1の半導体素子層と接続する第1の配線を形成し、第1の半導体素子層上に第1の保護材を形成し、第1の保護材に第1の配線に接続する第1の電極を形成し、第1の分離層に沿って第1の基板と第1の半導体素子層を分離し、上述の作製工程により第2の基板上に、第2の分離層、第2の半導体素子層、第2の配線、第2の保護材、第2の電極を作製し、第2の電極と第1の配線を接続するように第2の保護材上に第1の半導体素子層を貼り合わせ、第2の分離層に沿って第2の基板と第2の半導体素子層を含む積層構造を分離する半導体装置の作製方法に関する。
【選択図】図2
Description
本実施の形態を、図1(A)〜図1(F)、図2(A)〜図2(D)、図3(A)〜図3(E)、図4(A)〜図4(D)、図5(A)〜図5(D)、図6(A)〜図6(C)、図7(A)〜図7(C)図8(A)〜図8(B)、図9、図10、図11(A)〜図11(B)を用いて説明する。
102 分離層
103 レーザビーム
104 開口部
105 配線
106 保護材
107 電極
109 半導体素子層
111 半導体回路素子
113 シート状繊維体
113a 経糸
113b 緯糸
113c バスケットホール
114 有機樹脂
115 積層構造体
120 構造体
122 レーザビーム
123 溝
125 積層構造体
129 半導体素子層
131 レーザビーム
132 レーザビーム
133 レーザビーム
134 レーザビーム
135 開口部
136 開口部
137 開口部
138 開口部
141 配線
142 配線
145 導電性樹脂
146 導電性樹脂
152a TFT
152b TFT
153a 不純物領域
153b 不純物領域
154 ゲート絶縁膜
155a ゲート電極
155b ゲート電極
156 絶縁膜
157a 配線
157b 配線
158a 配線
158b 配線
159a 不純物領域
159b 不純物領域
161 島状半導体膜
162 島状半導体膜
163a チャネル形成領域
163b チャネル形成領域
165 絶縁膜
166 絶縁膜
167 絶縁膜
171 半導体回路素子
Claims (5)
- 第1の基板上に第1の分離層を形成し、
前記第1の分離層上に第1の半導体素子層を形成し、
前記第1の半導体素子層及び前記第1の分離層に第1のレーザビームを照射することにより、前記第1の半導体素子層及び前記第1の分離層の一部を除去して第1の開口部を形成し、
前記第1の開口部に、前記第1の半導体素子層と電気的に接続する第1の配線を形成し、
前記第1の半導体素子層上に第1の保護材を形成し、
前記第1の保護材中に、前記第1の配線に電気的に接続する第1の電極を形成して、
前記第1の分離層に沿って、前記第1の基板、及び、前記第1の保護材が形成された前記第1の半導体素子層を分離し、
第2の基板上に第2の分離層を形成し、
前記第2の分離層上に第2の半導体素子層を形成し、
前記第2の半導体素子層及び前記第2の分離層に第2のレーザビームを照射することにより、前記第2の半導体素子層及び前記第2の分離層の一部を除去して第2の開口部を形成し、
前記第2の開口部に、前記第2の半導体素子層と電気的に接続する第2の配線を形成し、
前記第2の半導体素子層上に第2の保護材を形成し、
前記第2の保護材中に、前記第2の配線に電気的に接続する第2の電極を形成して、
前記第2の保護材上に、前記第2の電極と前記第1の配線が電気的に接続されるように、前記第1の半導体素子層を貼り合わせ、
前記第2の分離層に沿って、前記第2の基板、並びに、前記第2の保護材が形成された前記第2の半導体素子層及び前記第1の保護材が形成された前記第1の半導体素子層を分離することを特徴とする半導体装置の作製方法。 - 請求項1において、
前記保護材は、シート状繊維体に有機樹脂が含浸された構造体であることを特徴とする半導体装置の作製方法。 - 請求項1または請求項2において、
前記第1の電極及び第2の電極は、それぞれ導電性樹脂であることを特徴とする半導体装置の作製方法。 - 請求項1乃至請求項3のいずれか1項において、
前記第1のレーザビーム及び第2のレーザビームはそれぞれ、紫外領域の波長10nm以上400nm以下を有するレーザビーム、可視領域の波長400nm以上700nm以下を有するレーザビーム、または、赤外領域の波長700nm以上1mm以下を有するレーザビームであることを特徴とする半導体装置の作製方法。 - 請求項1乃至請求項3のいずれか1項において、
前記第1のレーザビーム及び第2のレーザビームはそれぞれ、エキシマレーザ発振器、気体レーザ発振器、固体レーザ発振器、半導体レーザ発振器のいずれかにより発振されたレーザビームであることを特徴とする半導体装置の作製方法。
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