JP2010045396A - 窒化ガリウム系半導体素子の製造方法 - Google Patents

窒化ガリウム系半導体素子の製造方法 Download PDF

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Publication number
JP2010045396A
JP2010045396A JP2009261321A JP2009261321A JP2010045396A JP 2010045396 A JP2010045396 A JP 2010045396A JP 2009261321 A JP2009261321 A JP 2009261321A JP 2009261321 A JP2009261321 A JP 2009261321A JP 2010045396 A JP2010045396 A JP 2010045396A
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Japan
Prior art keywords
gallium nitride
based semiconductor
nitride based
semiconductor film
magnesium
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Abandoned
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JP2009261321A
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English (en)
Japanese (ja)
Inventor
Hideto Sugawara
秀人 菅原
Chie Hongo
智恵 本郷
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Toshiba Corp
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Toshiba Corp
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Priority to JP2009261321A priority Critical patent/JP2010045396A/ja
Publication of JP2010045396A publication Critical patent/JP2010045396A/ja
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H10D10/821—Vertical heterojunction BJTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02389—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/021—Manufacture or treatment of heterojunction BJTs [HBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/854—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs further characterised by the dopants
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/8215—Bodies characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/8242—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP characterised by the dopants

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
JP2009261321A 2005-04-05 2009-11-16 窒化ガリウム系半導体素子の製造方法 Abandoned JP2010045396A (ja)

Priority Applications (1)

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JP2009261321A JP2010045396A (ja) 2005-04-05 2009-11-16 窒化ガリウム系半導体素子の製造方法

Applications Claiming Priority (2)

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JP2005108474 2005-04-05
JP2009261321A JP2010045396A (ja) 2005-04-05 2009-11-16 窒化ガリウム系半導体素子の製造方法

Related Parent Applications (1)

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JP2006103819A Division JP4444230B2 (ja) 2005-04-05 2006-04-05 窒化ガリウム系半導体素子

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JP2010045396A true JP2010045396A (ja) 2010-02-25

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US (1) US7714350B2 (enExample)
EP (1) EP1710841A3 (enExample)
JP (1) JP2010045396A (enExample)
CN (1) CN100485955C (enExample)
TW (1) TW200711171A (enExample)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007098215A2 (en) * 2006-02-17 2007-08-30 The Regents Of The University Of California Method for growth of semipolar (al,in,ga,b)n optoelectronic devices
KR101502195B1 (ko) * 2007-11-21 2015-03-12 미쓰비시 가가꾸 가부시키가이샤 질화물 반도체 및 질화물 반도체의 결정 성장 방법 그리고 질화물 반도체 발광 소자
JP4486701B1 (ja) 2008-11-06 2010-06-23 パナソニック株式会社 窒化物系半導体素子およびその製造方法
JP5394717B2 (ja) * 2008-12-15 2014-01-22 日本オクラロ株式会社 窒化物半導体光素子の製造方法
WO2011013621A1 (ja) * 2009-07-31 2011-02-03 日亜化学工業株式会社 窒化物半導体レーザダイオード
JP4769905B2 (ja) * 2009-12-10 2011-09-07 Ｄｏｗａエレクトロニクス株式会社 ｐ型ＡｌＧａＮ層の製造方法およびＩＩＩ族窒化物半導体発光素子
CN102511085A (zh) * 2009-12-25 2012-06-20 松下电器产业株式会社 氮化物系半导体元件及其制造方法
JP2012094688A (ja) * 2010-10-27 2012-05-17 Sumitomo Electric Ind Ltd 半導体装置およびその製造方法
JP5175918B2 (ja) 2010-12-01 2013-04-03 株式会社東芝 半導体発光素子
JP2012156253A (ja) * 2011-01-25 2012-08-16 Sumitomo Electric Ind Ltd 窒化物半導体素子の製造方法
JP5649514B2 (ja) 2011-05-24 2015-01-07 株式会社東芝 半導体発光素子、窒化物半導体層、及び、窒化物半導体層の形成方法
KR101237351B1 (ko) * 2011-05-27 2013-03-04 포항공과대학교 산학협력단 전극 및 이를 포함한 전자 소자
US9312432B2 (en) * 2012-03-13 2016-04-12 Tsmc Solid State Lighting Ltd. Growing an improved P-GaN layer of an LED through pressure ramping
JP6054620B2 (ja) * 2012-03-29 2016-12-27 トランスフォーム・ジャパン株式会社 化合物半導体装置及びその製造方法
JP5934575B2 (ja) 2012-05-16 2016-06-15 サンケン電気株式会社 窒化物半導体装置の製造方法
JP2014127708A (ja) * 2012-12-27 2014-07-07 Toshiba Corp 半導体発光素子及び半導体発光素子の製造方法
JP6170300B2 (ja) * 2013-01-08 2017-07-26 住友化学株式会社 窒化物半導体デバイス
JP2015043413A (ja) 2013-07-22 2015-03-05 パナソニックＩｐマネジメント株式会社 窒化物半導体発光素子
JP6070526B2 (ja) * 2013-12-11 2017-02-01 豊田合成株式会社 半導体装置の製造方法
JP6001627B2 (ja) * 2014-12-08 2016-10-05 Ｄｏｗａエレクトロニクス株式会社 Ｉｉｉ族窒化物半導体発光素子の製造方法
EP3442026B1 (en) 2017-08-11 2023-03-08 IMEC vzw Gate for an enhancement-mode transistor
JP7204570B2 (ja) * 2019-04-15 2023-01-16 株式会社東芝 半導体装置及びその製造方法
WO2021125147A1 (ja) * 2019-12-18 2021-06-24 富士電機株式会社 半導体装置および半導体装置の製造方法

Citations (5)

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JPH11150296A (ja) * 1997-11-19 1999-06-02 Toshiba Corp 窒化物系半導体素子及びその製造方法
JP2000183466A (ja) * 1998-12-21 2000-06-30 Toshiba Corp 化合物半導体レーザおよびその製造方法
JP2001119064A (ja) * 1999-10-15 2001-04-27 Matsushita Electric Ind Co Ltd 窒化物半導体発光素子
JP2001320084A (ja) * 2000-03-02 2001-11-16 Ricoh Co Ltd Ｉｉｉ族窒化物半導体およびその作製方法および半導体装置
JP2004103930A (ja) * 2002-09-11 2004-04-02 Mitsubishi Cable Ind Ltd ｐ型ＧａＮ系化合物半導体の製造方法

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DE69637304T2 (de) 1995-03-17 2008-08-07 Toyoda Gosei Co., Ltd. Lichtemittierende Halbleitervorrichtung bestehend aus einer III-V Nitridverbindung
JP3198912B2 (ja) 1995-03-30 2001-08-13 住友化学工業株式会社 ３−５族化合物半導体の製造方法
US6020602A (en) 1996-09-10 2000-02-01 Kabushiki Kaisha Toshba GaN based optoelectronic device and method for manufacturing the same
JPH11177134A (ja) 1997-12-15 1999-07-02 Sharp Corp 半導体素子の製造方法及び半導体素子、並びに発光素子の製造方法及び発光素子
JP3233139B2 (ja) 1999-09-30 2001-11-26 松下電器産業株式会社 窒化物半導体発光素子及びその製造方法
JP4103309B2 (ja) 2000-07-13 2008-06-18 松下電器産業株式会社 ｐ型窒化物半導体の製造方法
JP2001298214A (ja) 2000-02-10 2001-10-26 Sharp Corp 半導体発光素子およびその製造方法
JP3453558B2 (ja) 2000-12-25 2003-10-06 松下電器産業株式会社 窒化物半導体素子
TW540170B (en) 2002-07-08 2003-07-01 Arima Optoelectronics Corp Ohmic contact structure of semiconductor light emitting device and its manufacturing method

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11150296A (ja) * 1997-11-19 1999-06-02 Toshiba Corp 窒化物系半導体素子及びその製造方法
JP2000183466A (ja) * 1998-12-21 2000-06-30 Toshiba Corp 化合物半導体レーザおよびその製造方法
JP2001119064A (ja) * 1999-10-15 2001-04-27 Matsushita Electric Ind Co Ltd 窒化物半導体発光素子
JP2001320084A (ja) * 2000-03-02 2001-11-16 Ricoh Co Ltd Ｉｉｉ族窒化物半導体およびその作製方法および半導体装置
JP2004103930A (ja) * 2002-09-11 2004-04-02 Mitsubishi Cable Ind Ltd ｐ型ＧａＮ系化合物半導体の製造方法

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Publication number Publication date
US20060220044A1 (en) 2006-10-05
CN100485955C (zh) 2009-05-06
US7714350B2 (en) 2010-05-11
EP1710841A3 (en) 2009-07-01
CN1848452A (zh) 2006-10-18
EP1710841A2 (en) 2006-10-11
TW200711171A (en) 2007-03-16
TWI323044B (enExample) 2010-04-01

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