JP2009543269A5 - - Google Patents

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Publication number
JP2009543269A5
JP2009543269A5 JP2009518644A JP2009518644A JP2009543269A5 JP 2009543269 A5 JP2009543269 A5 JP 2009543269A5 JP 2009518644 A JP2009518644 A JP 2009518644A JP 2009518644 A JP2009518644 A JP 2009518644A JP 2009543269 A5 JP2009543269 A5 JP 2009543269A5
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JP
Japan
Prior art keywords
subset
memory cells
precharge
bit lines
row
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2009518644A
Other languages
English (en)
Japanese (ja)
Other versions
JP5209619B2 (ja
JP2009543269A (ja
Filing date
Publication date
Priority claimed from US11/771,853 external-priority patent/US7724593B2/en
Application filed filed Critical
Priority claimed from PCT/US2007/072974 external-priority patent/WO2008006075A2/en
Publication of JP2009543269A publication Critical patent/JP2009543269A/ja
Publication of JP2009543269A5 publication Critical patent/JP2009543269A5/ja
Application granted granted Critical
Publication of JP5209619B2 publication Critical patent/JP5209619B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2009518644A 2006-07-07 2007-07-06 フロントエンドプリチャージを有するメモリ Active JP5209619B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US81929606P 2006-07-07 2006-07-07
US60/819,296 2006-07-07
US11/771,853 2007-06-29
US11/771,853 US7724593B2 (en) 2006-07-07 2007-06-29 Memories with front end precharge
PCT/US2007/072974 WO2008006075A2 (en) 2006-07-07 2007-07-06 Memories with front end precharge

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012229226A Division JP2013037760A (ja) 2006-07-07 2012-10-16 フロントエンドプリチャージを有するメモリ

Publications (3)

Publication Number Publication Date
JP2009543269A JP2009543269A (ja) 2009-12-03
JP2009543269A5 true JP2009543269A5 (https=) 2010-03-04
JP5209619B2 JP5209619B2 (ja) 2013-06-12

Family

ID=38895499

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2009518644A Active JP5209619B2 (ja) 2006-07-07 2007-07-06 フロントエンドプリチャージを有するメモリ
JP2012229226A Pending JP2013037760A (ja) 2006-07-07 2012-10-16 フロントエンドプリチャージを有するメモリ

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2012229226A Pending JP2013037760A (ja) 2006-07-07 2012-10-16 フロントエンドプリチャージを有するメモリ

Country Status (7)

Country Link
EP (1) EP2041750B1 (https=)
JP (2) JP5209619B2 (https=)
KR (1) KR101088548B1 (https=)
CN (2) CN101542629B (https=)
AT (1) ATE479186T1 (https=)
DE (1) DE602007008729D1 (https=)
WO (1) WO2008006075A2 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7755961B2 (en) * 2006-07-07 2010-07-13 Rao G R Mohan Memories with selective precharge
US7995409B2 (en) * 2007-10-16 2011-08-09 S. Aqua Semiconductor, Llc Memory with independent access and precharge
US20160141020A1 (en) * 2014-11-18 2016-05-19 Mediatek Inc. Static random access memory free from write disturb and testing method thereof
CN105701040B (zh) 2014-11-28 2018-12-07 杭州华为数字技术有限公司 一种激活内存的方法及装置
US10373665B2 (en) 2016-03-10 2019-08-06 Micron Technology, Inc. Parallel access techniques within memory sections through section independence
CN108962324B (zh) * 2017-05-24 2020-12-15 华邦电子股份有限公司 存储器存储装置
KR20220138961A (ko) * 2021-04-07 2022-10-14 에스케이하이닉스 주식회사 메모리 장치 및 메모리 장치의 동작 방법

Family Cites Families (31)

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JPS581883A (ja) * 1981-06-25 1983-01-07 Fujitsu Ltd 低電力スタチツクｒａｍ
JPS63266689A (ja) * 1987-04-24 1988-11-02 Hitachi Ltd 半導体メモリ
US4845677A (en) * 1987-08-17 1989-07-04 International Business Machines Corporation Pipelined memory chip structure having improved cycle time
JPH02128249A (ja) * 1988-11-09 1990-05-16 Hitachi Ltd 記憶制御方式
JPH04162665A (ja) * 1990-10-26 1992-06-08 Matsushita Electric Ind Co Ltd 半導体記憶装置
JPH0512873A (ja) * 1991-07-05 1993-01-22 Fujitsu Ltd 半導体記憶装置
JPH0644784A (ja) * 1991-12-13 1994-02-18 Kawasaki Steel Corp 半導体スタティックメモリ
JP3481263B2 (ja) * 1992-02-19 2003-12-22 株式会社リコー シリアル記憶装置
JPH06119793A (ja) * 1992-10-07 1994-04-28 Matsushita Electric Ind Co Ltd 読み出し専用記憶装置
JP3559312B2 (ja) * 1994-06-30 2004-09-02 松下電器産業株式会社 Ｒｏｍ装置
JP2773665B2 (ja) * 1994-12-28 1998-07-09 ヤマハ株式会社 半導体記憶装置
JP2773663B2 (ja) * 1994-12-27 1998-07-09 ヤマハ株式会社 半導体記憶装置
US5630174A (en) * 1995-02-03 1997-05-13 Cirrus Logic, Inc. Adapter for detecting whether a peripheral is standard or multimedia type format and selectively switching the peripheral to couple or bypass the system bus
KR0147706B1 (ko) * 1995-06-30 1998-09-15 김주용 고속 동기형 마스크 롬
US5598374A (en) * 1995-07-14 1997-01-28 Cirrus Logic, Inc. Pipeland address memories, and systems and methods using the same
US5636174A (en) * 1996-01-11 1997-06-03 Cirrus Logic, Inc. Fast cycle time-low latency dynamic random access memories and systems and methods using the same
US6061759A (en) * 1996-02-09 2000-05-09 Apex Semiconductor, Inc. Hidden precharge pseudo cache DRAM
JPH1011969A (ja) * 1996-06-21 1998-01-16 Toshiba Microelectron Corp 半導体記憶装置
JPH10106264A (ja) * 1996-09-26 1998-04-24 Nec Corp 半導体記憶装置
US5828610A (en) * 1997-03-31 1998-10-27 Seiko Epson Corporation Low power memory including selective precharge circuit
US6314049B1 (en) * 2000-03-30 2001-11-06 Micron Technology, Inc. Elimination of precharge operation in synchronous flash memory
US6779076B1 (en) * 2000-10-05 2004-08-17 Micron Technology, Inc. Method and system for using dynamic random access memory as cache memory
JP5041631B2 (ja) * 2001-06-15 2012-10-03 ルネサスエレクトロニクス株式会社 半導体記憶装置
US6529412B1 (en) * 2002-01-16 2003-03-04 Advanced Micro Devices, Inc. Source side sensing scheme for virtual ground read of flash eprom array with adjacent bit precharge
JP2003271445A (ja) * 2002-03-15 2003-09-26 Sony Corp メモリ制御装置及び方法
US6834023B2 (en) 2002-08-01 2004-12-21 Micron Technology, Inc. Method and apparatus for saving current in a memory device
US7154795B2 (en) * 2004-07-30 2006-12-26 United Memories, Inc. Clock signal initiated precharge technique for active memory subarrays in dynamic random access memory (DRAM) devices and other integrated circuit devices incorporating embedded DRAM
FR2874734A1 (fr) * 2004-08-26 2006-03-03 St Microelectronics Sa Procede de lecture de cellules memoire programmables et effacables electriquement, a precharge anticipee de lignes de bit
JP2007035169A (ja) * 2005-07-27 2007-02-08 Matsushita Electric Ind Co Ltd 半導体記憶装置
US7755961B2 (en) * 2006-07-07 2010-07-13 Rao G R Mohan Memories with selective precharge
US7995409B2 (en) * 2007-10-16 2011-08-09 S. Aqua Semiconductor, Llc Memory with independent access and precharge

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