JP2009540122A - 連続送り物体へのロールツーロール原子層堆積システム及び方法 - Google Patents

連続送り物体へのロールツーロール原子層堆積システム及び方法 Download PDF

Info

Publication number
JP2009540122A
JP2009540122A JP2009514435A JP2009514435A JP2009540122A JP 2009540122 A JP2009540122 A JP 2009540122A JP 2009514435 A JP2009514435 A JP 2009514435A JP 2009514435 A JP2009514435 A JP 2009514435A JP 2009540122 A JP2009540122 A JP 2009540122A
Authority
JP
Japan
Prior art keywords
chamber
substrate
precursor gas
location
introducing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2009514435A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009540122A5 (enExample
Inventor
アーラット，アーメット・ガン
ブライトュング，エリック・マイケル
ヘラー，クリスティアン・マリア・アントン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of JP2009540122A publication Critical patent/JP2009540122A/ja
Publication of JP2009540122A5 publication Critical patent/JP2009540122A5/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45514—Mixing in close vicinity to the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
    • C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2009514435A 2006-06-05 2007-04-05 連続送り物体へのロールツーロール原子層堆積システム及び方法 Pending JP2009540122A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/446,077 US20070281089A1 (en) 2006-06-05 2006-06-05 Systems and methods for roll-to-roll atomic layer deposition on continuously fed objects
PCT/US2007/066029 WO2008057625A2 (en) 2006-06-05 2007-04-05 Systems and methods for roll-to-roll atomic layer deposition on continuously fed objects

Publications (2)

Publication Number Publication Date
JP2009540122A true JP2009540122A (ja) 2009-11-19
JP2009540122A5 JP2009540122A5 (enExample) 2010-05-20

Family

ID=38790571

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009514435A Pending JP2009540122A (ja) 2006-06-05 2007-04-05 連続送り物体へのロールツーロール原子層堆積システム及び方法

Country Status (5)

Country Link
US (1) US20070281089A1 (enExample)
EP (1) EP2029792A2 (enExample)
JP (1) JP2009540122A (enExample)
KR (1) KR20090043474A (enExample)
WO (1) WO2008057625A2 (enExample)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011137208A (ja) * 2009-12-28 2011-07-14 Sony Corp 成膜装置および成膜方法
WO2012133541A1 (ja) 2011-03-29 2012-10-04 凸版印刷株式会社 巻き取り成膜装置
JP2012201899A (ja) * 2011-03-23 2012-10-22 Toppan Printing Co Ltd 原子層堆積法成膜装置における回転ドラムおよび原子層堆積法成膜装置
JP2013067832A (ja) * 2011-09-22 2013-04-18 Toppan Printing Co Ltd 原子層堆積法によるフレキシブル基板への成膜方法及び成膜装置
JP2013535575A (ja) * 2010-07-23 2013-09-12 ロータス アプライド テクノロジー エルエルシー ロール・ツー・ロール薄膜堆積用の可撓性ウェブ基板の片面接触式基板輸送機構
WO2013180005A1 (ja) 2012-05-31 2013-12-05 凸版印刷株式会社 巻き取り成膜装置
JP2013544965A (ja) * 2010-10-16 2013-12-19 ケンブリッジ・ナノテック・インコーポレイテッド Ａｌｄコーティングシステム
JP2015519479A (ja) * 2012-06-15 2015-07-09 ピコサン オーワイＰｉｃｏｓｕｎ Ｏｙ 原子層堆積法による基板ウェブのコーティング
JP2015525298A (ja) * 2012-06-15 2015-09-03 ピコサン オーワイＰｉｃｏｓｕｎ Ｏｙ 原子層堆積法による基板ウェブのコーティング
JP2016504497A (ja) * 2012-11-30 2016-02-12 エルジー・ケム・リミテッド 膜形成装置
WO2016043277A1 (ja) * 2014-09-19 2016-03-24 凸版印刷株式会社 成膜装置及び成膜方法
WO2016059789A1 (ja) * 2014-10-14 2016-04-21 凸版印刷株式会社 フレキシブル基板上への気相成長法による成膜方法
JP2016526095A (ja) * 2013-05-06 2016-09-01 ロータス アプライド テクノロジー エルエルシーＬｏｔｕｓ Ａｐｐｌｉｅｄ Ｔｅｃｈｎｏｌｏｇｙ， Ｌｌｃ 可撓性基材上に薄膜を成膜するためのプラズマ生成
JP2016172901A (ja) * 2015-03-17 2016-09-29 凸版印刷株式会社 成膜装置
JP2017092454A (ja) * 2015-09-28 2017-05-25 ウルトラテック インク 高スループットの複数チャンバ原子層堆積システムおよび方法

Families Citing this family (93)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6623861B2 (en) 2001-04-16 2003-09-23 Battelle Memorial Institute Multilayer plastic substrates
US7198832B2 (en) * 1999-10-25 2007-04-03 Vitex Systems, Inc. Method for edge sealing barrier films
US20100330748A1 (en) 1999-10-25 2010-12-30 Xi Chu Method of encapsulating an environmentally sensitive device
US8900366B2 (en) 2002-04-15 2014-12-02 Samsung Display Co., Ltd. Apparatus for depositing a multilayer coating on discrete sheets
US7510913B2 (en) 2003-04-11 2009-03-31 Vitex Systems, Inc. Method of making an encapsulated plasma sensitive device
US7648925B2 (en) 2003-04-11 2010-01-19 Vitex Systems, Inc. Multilayer barrier stacks and methods of making multilayer barrier stacks
US7767498B2 (en) 2005-08-25 2010-08-03 Vitex Systems, Inc. Encapsulated devices and method of making
EP2000008B1 (en) * 2006-03-26 2011-04-27 Lotus Applied Technology, Llc Atomic layer deposition system and method for coating flexible substrates
US8187679B2 (en) 2006-07-29 2012-05-29 Lotus Applied Technology, Llc Radical-enhanced atomic layer deposition system and method
US11136667B2 (en) 2007-01-08 2021-10-05 Eastman Kodak Company Deposition system and method using a delivery head separated from a substrate by gas pressure
JP2009179427A (ja) * 2008-01-30 2009-08-13 Fujifilm Corp 搬送装置および真空成膜装置
US9238867B2 (en) * 2008-05-20 2016-01-19 Asm International N.V. Apparatus and method for high-throughput atomic layer deposition
US20090291209A1 (en) * 2008-05-20 2009-11-26 Asm International N.V. Apparatus and method for high-throughput atomic layer deposition
US8851012B2 (en) * 2008-09-17 2014-10-07 Veeco Ald Inc. Vapor deposition reactor using plasma and method for forming thin film using the same
US8770142B2 (en) * 2008-09-17 2014-07-08 Veeco Ald Inc. Electrode for generating plasma and plasma generator
JP5405075B2 (ja) * 2008-09-24 2014-02-05 富士フイルム株式会社 ガスバリア膜の形成方法およびガスバリア膜
FI122032B (fi) * 2008-10-03 2011-07-29 Teknologian Tutkimuskeskus Vtt Kuitutuote, jossa on barrierkerros ja menetelmä sen valmistamiseksi
JP2012511106A (ja) * 2008-12-05 2012-05-17 ロータス アプライド テクノロジー エルエルシー 改善されたバリア層の性質を有する薄膜の高速成膜
US8350470B2 (en) * 2008-12-17 2013-01-08 General Electric Company Encapsulation structures of organic electroluminescence devices
US8102119B2 (en) * 2008-12-17 2012-01-24 General Electric Comapny Encapsulated optoelectronic device and method for making the same
CN101768731B (zh) * 2008-12-29 2012-10-17 K.C.科技股份有限公司 原子层沉积装置
US8871628B2 (en) 2009-01-21 2014-10-28 Veeco Ald Inc. Electrode structure, device comprising the same and method for forming electrode structure
US8257799B2 (en) 2009-02-23 2012-09-04 Synos Technology, Inc. Method for forming thin film using radicals generated by plasma
US20100221426A1 (en) * 2009-03-02 2010-09-02 Fluens Corporation Web Substrate Deposition System
US8758512B2 (en) 2009-06-08 2014-06-24 Veeco Ald Inc. Vapor deposition reactor and method for forming thin film
EP2281921A1 (en) 2009-07-30 2011-02-09 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO Apparatus and method for atomic layer deposition.
US20110023775A1 (en) * 2009-07-31 2011-02-03 E.I. Du Pont De Nemours And Company Apparatus for atomic layer deposition
US8657959B2 (en) * 2009-07-31 2014-02-25 E I Du Pont De Nemours And Company Apparatus for atomic layer deposition on a moving substrate
BR112012005212A2 (pt) 2009-09-22 2016-03-15 3M Innovative Properties Co método para aplicação de revestimetos por deposição de camada atômica em subtratos não cerâmicos porosos
CN102639749B (zh) * 2009-10-14 2015-06-17 莲花应用技术有限责任公司 在原子层沉积系统中抑制过量前体在单独前体区之间运送
US20110097494A1 (en) * 2009-10-27 2011-04-28 Kerr Roger S Fluid conveyance system including flexible retaining mechanism
US8637123B2 (en) 2009-12-29 2014-01-28 Lotus Applied Technology, Llc Oxygen radical generation for radical-enhanced thin film deposition
KR101141069B1 (ko) * 2010-01-26 2012-05-10 주식회사 엔씨디 배치형 원자층 증착 장치
EP2360293A1 (en) 2010-02-11 2011-08-24 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO Method and apparatus for depositing atomic layers on a substrate
EP2362002A1 (en) 2010-02-18 2011-08-31 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO Continuous patterned layer deposition
EP2362411A1 (en) 2010-02-26 2011-08-31 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO Apparatus and method for reactive ion etching
US20110262641A1 (en) * 2010-04-26 2011-10-27 Aventa Systems, Llc Inline chemical vapor deposition system
US8865259B2 (en) * 2010-04-26 2014-10-21 Singulus Mocvd Gmbh I.Gr. Method and system for inline chemical vapor deposition
FI124414B (fi) 2010-04-30 2014-08-29 Beneq Oy Lähde ja järjestely substraatin käsittelemiseksi
FI124113B (fi) * 2010-08-30 2014-03-31 Beneq Oy Laitteisto ja menetelmä substraatin pinnan muokkaamiseksi
FI20105905A0 (fi) 2010-08-30 2010-08-30 Beneq Oy Suutinpää ja laite
US8771791B2 (en) * 2010-10-18 2014-07-08 Veeco Ald Inc. Deposition of layer using depositing apparatus with reciprocating susceptor
US8877300B2 (en) 2011-02-16 2014-11-04 Veeco Ald Inc. Atomic layer deposition using radicals of gas mixture
US9163310B2 (en) 2011-02-18 2015-10-20 Veeco Ald Inc. Enhanced deposition of layer on substrate using radicals
EP2557198A1 (en) 2011-08-10 2013-02-13 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO Method and apparatus for depositing atomic layers on a substrate
JP6231483B2 (ja) 2011-10-31 2017-11-15 スリーエム イノベイティブ プロパティズ カンパニー ロール形態の基材にコーティングを適用する方法
WO2013071100A1 (en) * 2011-11-11 2013-05-16 Charles Hillel Rosendorf Method and equipment for quantum vacuum energy extraction
DE102012207172A1 (de) * 2012-04-30 2013-10-31 Osram Gmbh Vorrichtung und verfahren zur oberflächenbehandlung eines substrats und verfahren zum herstellen eines optoelektronischen bauelements
KR101576702B1 (ko) * 2012-06-08 2015-12-10 코오롱인더스트리 주식회사 유리섬유시트의 수지조성물 도포장치
KR20130142869A (ko) * 2012-06-20 2013-12-30 주식회사 엠티에스나노테크 원자층 증착 장치 및 방법
KR101372309B1 (ko) * 2012-08-07 2014-03-13 (주)씨엔원 롤투롤 방식의 원자층 증착 장비 및 원자층 증착 방법
KR101372310B1 (ko) * 2012-08-14 2014-03-14 (주)씨엔원 롤투롤 방식의 원자층 증착 장비 및 원자층 증착 방법
KR20140063303A (ko) 2012-11-16 2014-05-27 삼성디스플레이 주식회사 플렉서블 디스플레이 장치의 제조 방법
WO2014084700A1 (ko) * 2012-11-30 2014-06-05 주식회사 엘지화학 롤
CN103966572A (zh) * 2013-02-05 2014-08-06 王东君 卷对卷式原子层沉积设备及其使用方法
EP2765218A1 (en) 2013-02-07 2014-08-13 Nederlandse Organisatie voor toegepast-natuurwetenschappelijk Onderzoek TNO Method and apparatus for depositing atomic layers on a substrate
KR20160024882A (ko) * 2013-06-27 2016-03-07 피코순 오와이 원자층 증착 반응기 내 기판 웹 트랙의 형성
KR20160032128A (ko) 2013-07-16 2016-03-23 쓰리엠 이노베이티브 프로퍼티즈 컴파니 필름의 롤 가공
US9598769B2 (en) 2013-07-24 2017-03-21 Uchicago Argonne, Llc Method and system for continuous atomic layer deposition
KR102244070B1 (ko) * 2014-01-07 2021-04-26 삼성디스플레이 주식회사 기상 증착 장치, 기상 증착 방법 및 유기 발광 표시 장치 제조 방법
US9755235B2 (en) 2014-07-17 2017-09-05 Ada Technologies, Inc. Extreme long life, high energy density batteries and method of making and using the same
CN104152844A (zh) * 2014-08-11 2014-11-19 江南石墨烯研究院 一种在真空中搭载衬底的方式
JP6305314B2 (ja) * 2014-10-29 2018-04-04 東京エレクトロン株式会社 成膜装置およびシャワーヘッド
US11984553B2 (en) 2014-12-02 2024-05-14 Polyplus Battery Company Lithium ion conducting sulfide glass fabrication
US20190173128A1 (en) 2014-12-02 2019-06-06 Polyplus Battery Company Making and inspecting a web of vitreous lithium sulfide separator sheet and lithium electrode assemblies and battery cells
US10147968B2 (en) 2014-12-02 2018-12-04 Polyplus Battery Company Standalone sulfide based lithium ion-conducting glass solid electrolyte and associated structures, cells and methods
US12294050B2 (en) 2014-12-02 2025-05-06 Polyplus Battery Company Lithium ion conducting sulfide glass fabrication
US10164289B2 (en) 2014-12-02 2018-12-25 Polyplus Battery Company Vitreous solid electrolyte sheets of Li ion conducting sulfur-based glass and associated structures, cells and methods
US11749834B2 (en) 2014-12-02 2023-09-05 Polyplus Battery Company Methods of making lithium ion conducting sulfide glass
US12454478B2 (en) 2022-09-09 2025-10-28 Polyplus Battery Company Ionically conductive glass preform
US12051824B2 (en) 2020-07-10 2024-07-30 Polyplus Battery Company Methods of making glass constructs
WO2016209460A2 (en) 2015-05-21 2016-12-29 Ada Technologies, Inc. High energy density hybrid pseudocapacitors and method of making and using the same
US12027661B2 (en) 2015-06-01 2024-07-02 Forge Nano Inc. Nano-engineered coatings for anode active materials, cathode active materials, and solid-state electrolytes and methods of making batteries containing nano-engineered coatings
US12401042B2 (en) 2015-06-01 2025-08-26 Forge Nano Inc. Nano-engineered coatings for anode active materials, cathode active materials, and solid-state electrolytes and methods of making batteries containing nano-engineered coatings
US11996564B2 (en) 2015-06-01 2024-05-28 Forge Nano Inc. Nano-engineered coatings for anode active materials, cathode active materials, and solid-state electrolytes and methods of making batteries containing nano-engineered coatings
WO2017023797A1 (en) 2015-07-31 2017-02-09 Ada Technologies, Inc. High energy and power electrochemical device and method of making and using same
US11244822B2 (en) * 2015-10-20 2022-02-08 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus for manufacturing a thin film and a method therefor
JP6697706B2 (ja) * 2015-12-07 2020-05-27 凸版印刷株式会社 原子層堆積装置
EP3436620A1 (en) * 2016-04-01 2019-02-06 3M Innovative Properties Company Roll-to-roll atomic layer deposition apparatus and method
US10868293B2 (en) 2017-07-07 2020-12-15 Polyplus Battery Company Treating sulfide glass surfaces and making solid state laminate electrode assemblies
WO2017197039A1 (en) 2016-05-10 2017-11-16 Polyplus Battery Company Solid-state laminate electrode assemblies and methods of making
US11631889B2 (en) 2020-01-15 2023-04-18 Polyplus Battery Company Methods and materials for protection of sulfide glass solid electrolytes
US10629950B2 (en) 2017-07-07 2020-04-21 Polyplus Battery Company Encapsulated sulfide glass solid electrolytes and solid-state laminate electrode assemblies
US12482827B2 (en) 2021-04-13 2025-11-25 Polyplus Battery Company Binary phosphorus nitride protective solid electrolyte intermediary structures for electrode assemblies
TWI620830B (zh) * 2016-12-30 2018-04-11 Nat Chung Shan Inst Science & Tech Batch coating process system
US11024846B2 (en) 2017-03-23 2021-06-01 Ada Technologies, Inc. High energy/power density, long cycle life, safe lithium-ion battery capable of long-term deep discharge/storage near zero volt and method of making and using the same
KR102713152B1 (ko) * 2018-09-20 2024-10-07 주식회사 엘지에너지솔루션 원자층 증착 장치
CN109082648A (zh) * 2018-11-13 2018-12-25 北京工业大学 原子层沉积连续式双面镀膜的卷绕装置
WO2021250477A1 (en) * 2020-06-10 2021-12-16 3M Innovative Properties Company Roll-to-roll vapor deposition apparatus and method
US12021187B2 (en) 2020-08-04 2024-06-25 Polyplus Battery Company Surface treatment of a sulfide glass solid electrolyte layer
US12034116B2 (en) 2020-08-04 2024-07-09 Polyplus Battery Company Glass solid electrolyte layer, methods of making glass solid electrolyte layer and electrodes and battery cells thereof
US12021238B2 (en) 2020-08-04 2024-06-25 Polyplus Battery Company Glassy embedded solid-state electrode assemblies, solid-state batteries and methods of making electrode assemblies and solid-state batteries
US12180586B2 (en) 2021-08-13 2024-12-31 NanoMaster, Inc. Apparatus and methods for roll-to-roll (R2R) plasma enhanced/activated atomic layer deposition (PEALD/PAALD)

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03138371A (ja) * 1989-10-23 1991-06-12 Canon Inc 堆積膜形成方法
JPH04165078A (ja) * 1990-10-29 1992-06-10 Sumitomo Electric Ind Ltd 長尺体用コーティング装置およびコーティング方法
JPH11504072A (ja) * 1995-04-17 1999-04-06 エナージー コンバーション デバイセス インコーポレーテッド 強固なバリヤ・コーティングの蒸着のためのマイクロ波ｃｖｄ法
US20020043216A1 (en) * 2000-08-09 2002-04-18 Chul-Ju Hwang Atomic layer deposition method and semiconductor device fabricating apparatus having rotatable gas injectors
WO2004073893A2 (en) * 2003-02-19 2004-09-02 Energy Conversion Devices, Inc. Gas gate for isolating regions of differing gaseous pressure
JP2004319484A (ja) * 2003-04-11 2004-11-11 Eastman Kodak Co 透明防湿層を形成するための方法及び装置並びに防湿型ｏｌｅｄデバイス
US6821563B2 (en) * 2002-10-02 2004-11-23 Applied Materials, Inc. Gas distribution system for cyclical layer deposition
WO2005076918A2 (en) * 2004-02-09 2005-08-25 The Boc Group, Inc. Barrier layer process and arrangement
JP2005248206A (ja) * 2004-03-01 2005-09-15 Tokyo Electron Ltd 成膜方法
WO2006042074A2 (en) * 2004-10-04 2006-04-20 Atomicity Systems, Inc. Multi-zone atomic layer deposition apparatus and method
WO2006093168A1 (ja) * 2005-03-04 2006-09-08 Youtec Co., Ltd. Ｃｖｄ装置と、それを用いた多層膜形成方法と、それにより形成された多層膜

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3314393A (en) * 1962-07-05 1967-04-18 Nippon Electric Co Vapor deposition device
US3379803A (en) * 1964-05-04 1968-04-23 Union Carbide Corp Coating method and apparatus for deposition of polymer-forming vapor under vacuum
US3650042A (en) * 1969-05-19 1972-03-21 Ibm Gas barrier for interconnecting and isolating two atmospheres
SE393967B (sv) * 1974-11-29 1977-05-31 Sateko Oy Forfarande och for utforande av stroleggning mellan lagren i ett virkespaket
EP0122092A3 (en) * 1983-04-06 1985-07-10 General Engineering Radcliffe Limited Vacuum coating apparatus
KR940000259A (ko) * 1992-06-12 1994-01-03 게리 리 그리스월드 테이프 지지체상에서의 다층 필름 제조 시스템 및 방법
US5736431A (en) * 1995-02-28 1998-04-07 Semiconductor Energy Laboratory Co., Ltd. Method for producing thin film solar battery
JP2006124784A (ja) * 2004-10-29 2006-05-18 Canon Inc 真空装置および真空チャンバーの排気方法
DE102005058869A1 (de) * 2005-12-09 2007-06-14 Cis Solartechnik Gmbh & Co. Kg Verfahren und Vorrichtung zur Beschichtung von Bändern
EP2000008B1 (en) * 2006-03-26 2011-04-27 Lotus Applied Technology, Llc Atomic layer deposition system and method for coating flexible substrates
US7413982B2 (en) * 2006-03-29 2008-08-19 Eastman Kodak Company Process for atomic layer deposition
US7456429B2 (en) * 2006-03-29 2008-11-25 Eastman Kodak Company Apparatus for atomic layer deposition

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03138371A (ja) * 1989-10-23 1991-06-12 Canon Inc 堆積膜形成方法
JPH04165078A (ja) * 1990-10-29 1992-06-10 Sumitomo Electric Ind Ltd 長尺体用コーティング装置およびコーティング方法
JPH11504072A (ja) * 1995-04-17 1999-04-06 エナージー コンバーション デバイセス インコーポレーテッド 強固なバリヤ・コーティングの蒸着のためのマイクロ波ｃｖｄ法
US20020043216A1 (en) * 2000-08-09 2002-04-18 Chul-Ju Hwang Atomic layer deposition method and semiconductor device fabricating apparatus having rotatable gas injectors
US6821563B2 (en) * 2002-10-02 2004-11-23 Applied Materials, Inc. Gas distribution system for cyclical layer deposition
WO2004073893A2 (en) * 2003-02-19 2004-09-02 Energy Conversion Devices, Inc. Gas gate for isolating regions of differing gaseous pressure
JP2004319484A (ja) * 2003-04-11 2004-11-11 Eastman Kodak Co 透明防湿層を形成するための方法及び装置並びに防湿型ｏｌｅｄデバイス
WO2005076918A2 (en) * 2004-02-09 2005-08-25 The Boc Group, Inc. Barrier layer process and arrangement
JP2005248206A (ja) * 2004-03-01 2005-09-15 Tokyo Electron Ltd 成膜方法
WO2006042074A2 (en) * 2004-10-04 2006-04-20 Atomicity Systems, Inc. Multi-zone atomic layer deposition apparatus and method
WO2006093168A1 (ja) * 2005-03-04 2006-09-08 Youtec Co., Ltd. Ｃｖｄ装置と、それを用いた多層膜形成方法と、それにより形成された多層膜

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011137208A (ja) * 2009-12-28 2011-07-14 Sony Corp 成膜装置および成膜方法
JP2013535575A (ja) * 2010-07-23 2013-09-12 ロータス アプライド テクノロジー エルエルシー ロール・ツー・ロール薄膜堆積用の可撓性ウェブ基板の片面接触式基板輸送機構
JP2013544965A (ja) * 2010-10-16 2013-12-19 ケンブリッジ・ナノテック・インコーポレイテッド Ａｌｄコーティングシステム
JP2012201899A (ja) * 2011-03-23 2012-10-22 Toppan Printing Co Ltd 原子層堆積法成膜装置における回転ドラムおよび原子層堆積法成膜装置
WO2012133541A1 (ja) 2011-03-29 2012-10-04 凸版印刷株式会社 巻き取り成膜装置
JP2013067832A (ja) * 2011-09-22 2013-04-18 Toppan Printing Co Ltd 原子層堆積法によるフレキシブル基板への成膜方法及び成膜装置
JPWO2013180005A1 (ja) * 2012-05-31 2016-01-21 凸版印刷株式会社 巻き取り成膜装置
WO2013180005A1 (ja) 2012-05-31 2013-12-05 凸版印刷株式会社 巻き取り成膜装置
US9687868B2 (en) 2012-05-31 2017-06-27 Toppan Printing Co., Ltd. Rolled film formation apparatus
JP2015525298A (ja) * 2012-06-15 2015-09-03 ピコサン オーワイＰｉｃｏｓｕｎ Ｏｙ 原子層堆積法による基板ウェブのコーティング
JP2015519479A (ja) * 2012-06-15 2015-07-09 ピコサン オーワイＰｉｃｏｓｕｎ Ｏｙ 原子層堆積法による基板ウェブのコーティング
JP2016504497A (ja) * 2012-11-30 2016-02-12 エルジー・ケム・リミテッド 膜形成装置
JP2016526095A (ja) * 2013-05-06 2016-09-01 ロータス アプライド テクノロジー エルエルシーＬｏｔｕｓ Ａｐｐｌｉｅｄ Ｔｅｃｈｎｏｌｏｇｙ， Ｌｌｃ 可撓性基材上に薄膜を成膜するためのプラズマ生成
WO2016043277A1 (ja) * 2014-09-19 2016-03-24 凸版印刷株式会社 成膜装置及び成膜方法
JPWO2016043277A1 (ja) * 2014-09-19 2017-06-29 凸版印刷株式会社 成膜装置及び成膜方法
WO2016059789A1 (ja) * 2014-10-14 2016-04-21 凸版印刷株式会社 フレキシブル基板上への気相成長法による成膜方法
JP2016172901A (ja) * 2015-03-17 2016-09-29 凸版印刷株式会社 成膜装置
JP2017092454A (ja) * 2015-09-28 2017-05-25 ウルトラテック インク 高スループットの複数チャンバ原子層堆積システムおよび方法

Also Published As

Publication number Publication date
US20070281089A1 (en) 2007-12-06
EP2029792A2 (en) 2009-03-04
WO2008057625A2 (en) 2008-05-15
KR20090043474A (ko) 2009-05-06
WO2008057625A3 (en) 2009-03-19

Similar Documents

Publication Publication Date Title
JP2009540122A (ja) 連続送り物体へのロールツーロール原子層堆積システム及び方法
TWI817978B (zh) 半導體處理裝置及處理基板之方法
JP2009540122A5 (enExample)
EP2954094B1 (en) Method and apparatus for depositing atomic layers on a substrate
JP5989682B2 (ja) 原子層堆積のための装置及びプロセス
JP5206908B2 (ja) 巻き取り成膜装置
US20100221426A1 (en) Web Substrate Deposition System
JP5927305B2 (ja) 基板群を処理する原子層堆積反応炉およびその方法
KR20180130548A (ko) 롤-투-롤 원자 층 침착 장치 및 방법
TW201404921A (zh) 用於塗覆基體幅板之方法及裝置
TW202010865A (zh) 空間原子層沈積中的氣體分離控制
US20140199856A1 (en) Method of depositing a film and film deposition apparatus
JP6119745B2 (ja) 巻き取り成膜装置
TWI684667B (zh) 沉積技術（一）
WO2011088024A1 (en) Methods and apparatus for atomic layer deposition on large area substrates
US20110262641A1 (en) Inline chemical vapor deposition system
US20160138163A1 (en) Forming a substrate web track in an atomic layer deposition reactor
WO2014084700A1 (ko) 롤
KR101238534B1 (ko) 리니어 다층박막 증착장치
US8780314B2 (en) Strengthened structural module and method of fabrication
JP5733507B2 (ja) 成膜方法
WO2017188947A1 (en) System for atomic layer deposition on flexible substrates and method for the same
KR101760666B1 (ko) 원자층 증착장치
JP5736857B2 (ja) 成膜装置
KR20150037261A (ko) 막 형성 장치

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090611

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A711

Effective date: 20090716

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20090716

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100329

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20100329

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20100329

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110322

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120911

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20130423