JP2005248206A - 成膜方法 - Google Patents
成膜方法 Download PDFInfo
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- JP2005248206A JP2005248206A JP2004056628A JP2004056628A JP2005248206A JP 2005248206 A JP2005248206 A JP 2005248206A JP 2004056628 A JP2004056628 A JP 2004056628A JP 2004056628 A JP2004056628 A JP 2004056628A JP 2005248206 A JP2005248206 A JP 2005248206A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
- H01L21/28562—Selective deposition
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45529—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making a layer stack of alternating different compositions or gradient compositions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
Abstract
【解決手段】原料物質として蒸気圧が高く下地に対する濡れ性の良好なCuカルボン酸錯体またはその誘導体を用い還元ガスとしてH2を用いて原料供給工程S1、原料供給停止・残留ガス除去工程S2、還元性ガス供給工程S3、還元性ガス停止・残留ガス除去工程S4を目的の膜厚となるまで反復するALD(Atomic Layer Deposition)により基板上にCuの成膜を行う。
【選択図】図3
Description
また本発明は、成膜工程のスループット向上と、Cu薄膜の面粗さの低減および下地への密着性の向上等を両立させることが可能な成膜方法を提供することを目的とする。
図1は本発明の一実施形態に係る成膜方法を実施する成膜装置の構成の一例を示す略断面、図2は本実施の形態の成膜方法の一例を示す線図、図3は図1の成膜装置のガス供給系の変形例を示す概略図である。
このプロセスの実施に際しては、ヒーター5によりウエハWを、50〜350℃の温度に加熱しながら排気装置38によりチャンバー1内を排気してチャンバー1内を10〜1400Paに維持した状態とする。
Cu(CF3COO)2+2H* → Cu+2CF3COOH
2…サセプタ
2a…下部電極
3…支持部材
5…ヒーター
10…シャワーヘッド
20…ガス供給機構
21,41…Cu原料供給源
22…ヒーター
23…Arガス供給源
24…H2ガス供給源
25,27,28,44…ガスライン
45…気化器
S1,S11,S12…原料供給工程
S2,S4,S12,S14,S22,S24…原料供給停止・残留ガス除去工程
S3,S13,S23…還元性ガス供給工程
W…ウエハ
Claims (14)
- Cuカルボン酸錯体またはその誘導体を含む原料物質を用いたCVDにより、基板上にCu膜を成膜することを特徴とする成膜方法。
- Cuカルボン酸錯体またはその誘導体を含む原料物質を基板上に供給する工程と、
前記原料物質の供給を停止後、還元性ガスを前記基板に供給する工程と
を交互に実施することを特徴とする成膜方法。 - 処理容器内に基板を配置し、
(a)Cuカルボン酸錯体またはその誘導体を含む原料物質を基板に供給する工程、
(b)前記原料物質の供給停止後、前記処理容器内の残留ガスを除去する工程、
(c)還元性ガスを基板に供給する工程、
(d)前記還元性ガスの供給停止後、前記処理容器内の残留ガスを除去する工程
の(a)〜(d)の工程を繰り返すことを特徴とする成膜方法。 - 前記(b)の工程および前記(d)の工程は、前記処理容器内の雰囲気を不活性ガスで置換するか、または前記処理容器内を真空排気することを特徴とする請求項3に記載の成膜方法。
- 前記還元性ガスを基板に供給する際に、プラズマによりラジカル化することを特徴とする請求項2から請求項4のいずれか1項に記載の成膜方法。
- 前記還元性ガスは、H2ガスであることを特徴とする請求項2から請求項5のいずれか1項に記載の成膜方法。
- 前記原料物質は、トリフルオロ酢酸Cuを含むことを特徴とする請求項1から請求項6のいずれか1項に記載の成膜方法。
- Cu含有原料物質を基板上に供給する工程と、前記Cu含有原料物質の供給を停止後、還元性ガスを前記基板に供給する工程とを交互に実施する成膜方法であって、
成膜初期に還元性ガスの供給時間を第1の時間T1として前記2つの工程を交互に実施する第1成膜期間と、その後、前記還元性ガスの供給時間を前記T1よりも短い第2の時間T2として前記2つの工程を交互に実施する第2成膜期間とを有することを特徴とする成膜方法。 - 処理容器内に基板を配置し、
(a)Cu含有原料物質を基板に供給する工程、
(b)前記Cu含有原料物質の供給停止後、前記処理容器内の残留ガスを除去する工程、
(c)還元性ガスを基板に供給する工程、
(d)前記還元性ガスの供給停止後、前記処理容器内の残留ガスを除去する工程
の(a)〜(d)の工程を繰り返す成膜方法であって、
成膜初期に還元性ガスの供給時間を第1の時間T1として前記(a)〜(d)の工程を繰り返す第1成膜期間と、その後、前記還元性ガスの供給時間を前記第1の時間T1よりも短い第2の時間T2として前記(a)〜(d)の工程を繰り返す第2成膜期間とを有することを特徴とする成膜方法。 - 前記(b)の工程および前記(d)の工程は、前記処理容器内の雰囲気を不活性ガスで置換するか、または前記処理容器内を真空排気することを特徴とする請求項9に記載の成膜方法。
- 前記第1成膜期間は前記基板に形成されるCuが当該基板上で連続膜となるまでであり、前記第2成膜期間は前記基板に形成されるCuの膜厚が目的の膜厚になるまでであることを特徴とする請求項8または請求項10に記載の成膜方法。
- 前記第1の時間T1は3〜20秒間であり、前記第2の時間T2は1〜5秒であることを特徴とする請求項8から請求項11のいずれか1項に記載の成膜方法。
- 前記還元性ガスを基板に供給する際に、プラズマによりラジカル化することを特徴とする請求項8から請求項12のいずれか1項に記載の成膜方法。
- 前記還元性ガスは、H2ガスであることを特徴とする請求項8から請求項13のいずれか1項に記載の成膜方法。
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004056628A JP4601975B2 (ja) | 2004-03-01 | 2004-03-01 | 成膜方法 |
TW094105899A TW200533778A (en) | 2004-03-01 | 2005-02-25 | Method for forming copper film |
CNB2005800003719A CN100572592C (zh) | 2004-03-01 | 2005-02-25 | 铜膜的成膜方法 |
EP05710705A EP1743953B1 (en) | 2004-03-01 | 2005-02-25 | Method for forming copper film |
PCT/JP2005/003155 WO2005083152A1 (ja) | 2004-03-01 | 2005-02-25 | 銅膜の成膜方法 |
US10/591,476 US8211500B2 (en) | 2004-03-01 | 2005-02-25 | Copper film deposition method |
KR1020067017675A KR100771725B1 (ko) | 2004-03-01 | 2005-02-25 | 구리막의 성막 방법 |
CN2009102058754A CN101684547B (zh) | 2004-03-01 | 2005-02-25 | 铜膜的成膜方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004056628A JP4601975B2 (ja) | 2004-03-01 | 2004-03-01 | 成膜方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005248206A true JP2005248206A (ja) | 2005-09-15 |
JP4601975B2 JP4601975B2 (ja) | 2010-12-22 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2004056628A Expired - Fee Related JP4601975B2 (ja) | 2004-03-01 | 2004-03-01 | 成膜方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8211500B2 (ja) |
EP (1) | EP1743953B1 (ja) |
JP (1) | JP4601975B2 (ja) |
KR (1) | KR100771725B1 (ja) |
CN (2) | CN100572592C (ja) |
TW (1) | TW200533778A (ja) |
WO (1) | WO2005083152A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009540122A (ja) * | 2006-06-05 | 2009-11-19 | ゼネラル・エレクトリック・カンパニイ | 連続送り物体へのロールツーロール原子層堆積システム及び方法 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2000008B1 (en) | 2006-03-26 | 2011-04-27 | Lotus Applied Technology, Llc | Atomic layer deposition system and method for coating flexible substrates |
JP2008031541A (ja) * | 2006-07-31 | 2008-02-14 | Tokyo Electron Ltd | Cvd成膜方法およびcvd成膜装置 |
KR101791033B1 (ko) | 2010-07-23 | 2017-10-27 | 로터스 어플라이드 테크놀로지, 엘엘씨 | 롤-투-롤 박막 증착을 위한 유연한 웹 기재의 한쪽 측면과 접촉하는 기재 이동 메커니즘 |
KR101657341B1 (ko) * | 2011-04-25 | 2016-09-13 | 도쿄엘렉트론가부시키가이샤 | 성막 방법 |
CN102851645A (zh) * | 2012-10-11 | 2013-01-02 | 电子科技大学 | 一种低残余应力的铜薄膜制备方法 |
CN104264123B (zh) * | 2014-09-19 | 2015-04-22 | 中南民族大学 | 一种用于催化甲醇合成反应的CuNi合金薄膜的原子层沉积制备方法 |
CN112813406B (zh) * | 2020-12-30 | 2023-07-14 | 武汉工程大学 | 基于cvd技术在异形件表面制备三维金属单质薄膜的设备及方法 |
Citations (1)
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JPS635424B2 (ja) * | 1979-10-17 | 1988-02-03 | Ruhrchemie Ag |
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JPS635424A (ja) | 1986-06-25 | 1988-01-11 | Matsushita Electric Ind Co Ltd | 電子機器 |
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US6200893B1 (en) * | 1999-03-11 | 2001-03-13 | Genus, Inc | Radical-assisted sequential CVD |
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US20020013487A1 (en) * | 2000-04-03 | 2002-01-31 | Norman John Anthony Thomas | Volatile precursors for deposition of metals and metal-containing films |
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US7015138B2 (en) * | 2001-03-27 | 2006-03-21 | Sharp Laboratories Of America, Inc. | Multi-layered barrier metal thin films for Cu interconnect by ALCVD |
JP2005518088A (ja) * | 2001-07-16 | 2005-06-16 | アプライド マテリアルズ インコーポレイテッド | タングステン複合膜の形成 |
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JP2003138378A (ja) | 2001-10-30 | 2003-05-14 | Anelva Corp | 薄膜形成方法 |
WO2003044242A2 (en) * | 2001-11-16 | 2003-05-30 | Applied Materials, Inc. | Atomic layer deposition of copper using a reducing gas and non-fluorinated copper precursors |
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-
2004
- 2004-03-01 JP JP2004056628A patent/JP4601975B2/ja not_active Expired - Fee Related
-
2005
- 2005-02-25 TW TW094105899A patent/TW200533778A/zh not_active IP Right Cessation
- 2005-02-25 WO PCT/JP2005/003155 patent/WO2005083152A1/ja active Application Filing
- 2005-02-25 KR KR1020067017675A patent/KR100771725B1/ko not_active IP Right Cessation
- 2005-02-25 US US10/591,476 patent/US8211500B2/en not_active Expired - Fee Related
- 2005-02-25 EP EP05710705A patent/EP1743953B1/en not_active Not-in-force
- 2005-02-25 CN CNB2005800003719A patent/CN100572592C/zh not_active Expired - Fee Related
- 2005-02-25 CN CN2009102058754A patent/CN101684547B/zh not_active Expired - Fee Related
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS635424B2 (ja) * | 1979-10-17 | 1988-02-03 | Ruhrchemie Ag |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009540122A (ja) * | 2006-06-05 | 2009-11-19 | ゼネラル・エレクトリック・カンパニイ | 連続送り物体へのロールツーロール原子層堆積システム及び方法 |
Also Published As
Publication number | Publication date |
---|---|
TW200533778A (en) | 2005-10-16 |
US8211500B2 (en) | 2012-07-03 |
EP1743953A1 (en) | 2007-01-17 |
CN1826426A (zh) | 2006-08-30 |
EP1743953A4 (en) | 2008-02-27 |
CN100572592C (zh) | 2009-12-23 |
KR100771725B1 (ko) | 2007-10-30 |
US20070197398A1 (en) | 2007-08-23 |
CN101684547A (zh) | 2010-03-31 |
WO2005083152A1 (ja) | 2005-09-09 |
JP4601975B2 (ja) | 2010-12-22 |
EP1743953B1 (en) | 2012-11-14 |
TWI308936B (ja) | 2009-04-21 |
KR20060114378A (ko) | 2006-11-06 |
CN101684547B (zh) | 2011-12-28 |
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