JP2009532860A5 - - Google Patents
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- JP2009532860A5 JP2009532860A5 JP2009502775A JP2009502775A JP2009532860A5 JP 2009532860 A5 JP2009532860 A5 JP 2009532860A5 JP 2009502775 A JP2009502775 A JP 2009502775A JP 2009502775 A JP2009502775 A JP 2009502775A JP 2009532860 A5 JP2009532860 A5 JP 2009532860A5
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- JP
- Japan
- Prior art keywords
- substrate
- film
- etching gas
- temperature
- substrate temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000000034 method Methods 0.000 claims description 106
- 239000000758 substrate Substances 0.000 claims description 77
- 239000007789 gas Substances 0.000 claims description 32
- 238000005530 etching Methods 0.000 claims description 21
- 229910052731 fluorine Inorganic materials 0.000 claims description 11
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- 229910004129 HfSiO Inorganic materials 0.000 claims description 4
- 229910003902 SiCl 4 Inorganic materials 0.000 claims description 4
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 4
- 229910006501 ZrSiO Inorganic materials 0.000 claims description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 2
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 2
- 239000012080 ambient air Substances 0.000 claims description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 2
- 238000004140 cleaning Methods 0.000 claims description 2
- -1 epitaxial Si Inorganic materials 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- 239000011261 inert gas Substances 0.000 claims description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 2
- 238000000137 annealing Methods 0.000 claims 2
- 239000001257 hydrogen Substances 0.000 claims 2
- 239000012535 impurity Substances 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/393,736 | 2006-03-31 | ||
| US11/393,736 US7501349B2 (en) | 2006-03-31 | 2006-03-31 | Sequential oxide removal using fluorine and hydrogen |
| PCT/US2007/002373 WO2007126460A1 (en) | 2006-03-31 | 2007-01-30 | Sequential oxide removal using fluorine and hydrogen |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013252742A Division JP2014053643A (ja) | 2006-03-31 | 2013-12-06 | フッ素及び水素を使用する順次の酸化物の取り除き |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009532860A JP2009532860A (ja) | 2009-09-10 |
| JP2009532860A5 true JP2009532860A5 (https=) | 2010-03-18 |
| JP5638238B2 JP5638238B2 (ja) | 2014-12-10 |
Family
ID=38575877
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009502775A Expired - Fee Related JP5638238B2 (ja) | 2006-03-31 | 2007-01-30 | フッ素及び水素を使用する順次の酸化物の取り除き |
| JP2013252742A Pending JP2014053643A (ja) | 2006-03-31 | 2013-12-06 | フッ素及び水素を使用する順次の酸化物の取り除き |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013252742A Pending JP2014053643A (ja) | 2006-03-31 | 2013-12-06 | フッ素及び水素を使用する順次の酸化物の取り除き |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7501349B2 (https=) |
| JP (2) | JP5638238B2 (https=) |
| TW (1) | TWI343079B (https=) |
| WO (1) | WO2007126460A1 (https=) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3822947A1 (de) | 1988-07-07 | 1990-01-11 | Wilkinson Sword Gmbh | Spendersystem fuer rasierklingeneinheiten |
| US7780862B2 (en) * | 2006-03-21 | 2010-08-24 | Applied Materials, Inc. | Device and method for etching flash memory gate stacks comprising high-k dielectric |
| US8722547B2 (en) * | 2006-04-20 | 2014-05-13 | Applied Materials, Inc. | Etching high K dielectrics with high selectivity to oxide containing layers at elevated temperatures with BC13 based etch chemistries |
| US7628866B2 (en) * | 2006-11-23 | 2009-12-08 | United Microelectronics Corp. | Method of cleaning wafer after etching process |
| JP2008258349A (ja) * | 2007-04-04 | 2008-10-23 | Nec Electronics Corp | 半導体装置の製造方法 |
| KR20130092574A (ko) * | 2010-08-04 | 2013-08-20 | 어플라이드 머티어리얼스, 인코포레이티드 | 기판 표면으로부터 오염물들 및 자연 산화물들을 제거하는 방법 |
| US9437449B2 (en) * | 2012-12-31 | 2016-09-06 | Texas Instruments Incorporated | Uniform, damage free nitride etch |
| US20140186544A1 (en) * | 2013-01-02 | 2014-07-03 | Applied Materials, Inc. | Metal processing using high density plasma |
| JP2014189442A (ja) * | 2013-03-27 | 2014-10-06 | Sumitomo Electric Ind Ltd | 炭化珪素半導体基板の製造方法 |
| US8975706B2 (en) | 2013-08-06 | 2015-03-10 | Intermolecular, Inc. | Gate stacks including TaXSiYO for MOSFETS |
| KR102245729B1 (ko) | 2013-08-09 | 2021-04-28 | 어플라이드 머티어리얼스, 인코포레이티드 | 에피택셜 성장 이전에 기판 표면을 사전 세정하기 위한 방법 및 장치 |
| US8945414B1 (en) | 2013-11-13 | 2015-02-03 | Intermolecular, Inc. | Oxide removal by remote plasma treatment with fluorine and oxygen radicals |
| US9653291B2 (en) * | 2014-11-13 | 2017-05-16 | Applied Materials, Inc. | Method for removing native oxide and residue from a III-V group containing surface |
| WO2018052477A2 (en) * | 2016-09-15 | 2018-03-22 | Applied Materials, Inc. | An integrated method for wafer outgassing reduction |
| JP7373302B2 (ja) * | 2019-05-15 | 2023-11-02 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理装置 |
| US12272558B2 (en) * | 2022-05-09 | 2025-04-08 | Tokyo Electron Limited | Selective and isotropic etch of silicon over silicon-germanium alloys and dielectrics; via new chemistry and surface modification |
| CN115458409A (zh) * | 2022-08-25 | 2022-12-09 | 上海华力集成电路制造有限公司 | 一种SiGe沟道的形成方法 |
| CN117802582B (zh) * | 2024-03-01 | 2024-08-06 | 浙江求是半导体设备有限公司 | 外延炉清洗方法和N型SiC的制备方法 |
| CN120977894A (zh) * | 2024-05-15 | 2025-11-18 | 盛美半导体设备(上海)股份有限公司 | 种子层预处理装置及方法、基板处理设备 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03288432A (ja) * | 1990-04-04 | 1991-12-18 | Nippon Telegr & Teleph Corp <Ntt> | 表面清浄化法 |
| JPH042125A (ja) * | 1990-04-19 | 1992-01-07 | Fujitsu Ltd | シリコンの表面処理方法 |
| JPH0496226A (ja) * | 1990-08-03 | 1992-03-27 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPH07263672A (ja) * | 1991-10-17 | 1995-10-13 | Nec Corp | 半導体装置の製造方法および製造装置 |
| JPH0737823A (ja) * | 1993-07-21 | 1995-02-07 | Oki Electric Ind Co Ltd | 半導体膜形成方法及び半導体膜形成装置 |
| JPH0786240A (ja) * | 1993-09-10 | 1995-03-31 | Hitachi Ltd | 表面処理装置 |
| WO1997015069A1 (en) * | 1995-10-19 | 1997-04-24 | Massachusetts Institute Of Technology | Metals removal process |
| US5869405A (en) * | 1996-01-03 | 1999-02-09 | Micron Technology, Inc. | In situ rapid thermal etch and rapid thermal oxidation |
| EP1048064A1 (en) | 1998-01-13 | 2000-11-02 | Applied Materials, Inc. | Etching methods for anisotropic platinum profile |
| US6703290B2 (en) | 1999-07-14 | 2004-03-09 | Seh America, Inc. | Growth of epitaxial semiconductor material with improved crystallographic properties |
| JP4910231B2 (ja) * | 2000-10-25 | 2012-04-04 | ソニー株式会社 | 半導体装置の製造方法 |
| JP4060580B2 (ja) | 2001-11-29 | 2008-03-12 | 株式会社ルネサステクノロジ | ヘテロ接合バイポーラトランジスタ |
| JP2004128281A (ja) * | 2002-10-03 | 2004-04-22 | Tokyo Electron Ltd | 基板処理方法および基板処理装置 |
| US6774000B2 (en) * | 2002-11-20 | 2004-08-10 | International Business Machines Corporation | Method of manufacture of MOSFET device with in-situ doped, raised source and drain structures |
| US6949451B2 (en) | 2003-03-10 | 2005-09-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | SOI chip with recess-resistant buried insulator and method of manufacturing the same |
| JP2005019463A (ja) * | 2003-06-23 | 2005-01-20 | Toshiba Corp | 半導体装置 |
| JP3929939B2 (ja) * | 2003-06-25 | 2007-06-13 | 株式会社東芝 | 処理装置、製造装置、処理方法及び電子装置の製造方法 |
| US20050048742A1 (en) * | 2003-08-26 | 2005-03-03 | Tokyo Electron Limited | Multiple grow-etch cyclic surface treatment for substrate preparation |
| US7037816B2 (en) | 2004-01-23 | 2006-05-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | System and method for integration of HfO2 and RTCVD poly-silicon |
-
2006
- 2006-03-31 US US11/393,736 patent/US7501349B2/en not_active Expired - Fee Related
-
2007
- 2007-01-30 WO PCT/US2007/002373 patent/WO2007126460A1/en not_active Ceased
- 2007-01-30 JP JP2009502775A patent/JP5638238B2/ja not_active Expired - Fee Related
- 2007-03-28 TW TW096110752A patent/TWI343079B/zh not_active IP Right Cessation
-
2013
- 2013-12-06 JP JP2013252742A patent/JP2014053643A/ja active Pending
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