JP5638238B2 - フッ素及び水素を使用する順次の酸化物の取り除き - Google Patents

フッ素及び水素を使用する順次の酸化物の取り除き Download PDF

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Publication number
JP5638238B2
JP5638238B2 JP2009502775A JP2009502775A JP5638238B2 JP 5638238 B2 JP5638238 B2 JP 5638238B2 JP 2009502775 A JP2009502775 A JP 2009502775A JP 2009502775 A JP2009502775 A JP 2009502775A JP 5638238 B2 JP5638238 B2 JP 5638238B2
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Prior art keywords
substrate
film
oxide layer
temperature
gas
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Expired - Fee Related
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JP2009502775A
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Japanese (ja)
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JP2009532860A5 (https=
JP2009532860A (ja
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ディップ，アンソニー
リース，アレン，ジョン
オー，ソンホ
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/12—Cleaning before device manufacture, i.e. Begin-Of-Line process by dry cleaning only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H10P14/271—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials characterised by the preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/36—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done before the formation of the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials
    • H10P70/234—Cleaning during device manufacture during, before or after processing of insulating materials the processing being the formation of vias or contact holes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection

Landscapes

  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
JP2009502775A 2006-03-31 2007-01-30 フッ素及び水素を使用する順次の酸化物の取り除き Expired - Fee Related JP5638238B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/393,736 2006-03-31
US11/393,736 US7501349B2 (en) 2006-03-31 2006-03-31 Sequential oxide removal using fluorine and hydrogen
PCT/US2007/002373 WO2007126460A1 (en) 2006-03-31 2007-01-30 Sequential oxide removal using fluorine and hydrogen

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2013252742A Division JP2014053643A (ja) 2006-03-31 2013-12-06 フッ素及び水素を使用する順次の酸化物の取り除き

Publications (3)

Publication Number Publication Date
JP2009532860A JP2009532860A (ja) 2009-09-10
JP2009532860A5 JP2009532860A5 (https=) 2010-03-18
JP5638238B2 true JP5638238B2 (ja) 2014-12-10

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Family Applications (2)

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JP2009502775A Expired - Fee Related JP5638238B2 (ja) 2006-03-31 2007-01-30 フッ素及び水素を使用する順次の酸化物の取り除き
JP2013252742A Pending JP2014053643A (ja) 2006-03-31 2013-12-06 フッ素及び水素を使用する順次の酸化物の取り除き

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2013252742A Pending JP2014053643A (ja) 2006-03-31 2013-12-06 フッ素及び水素を使用する順次の酸化物の取り除き

Country Status (4)

Country Link
US (1) US7501349B2 (https=)
JP (2) JP5638238B2 (https=)
TW (1) TWI343079B (https=)
WO (1) WO2007126460A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08593B2 (ja) 1988-07-07 1996-01-10 ウイルキンソン・スウオード・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフトウング かみそり刃単位体の供給装置

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US7780862B2 (en) * 2006-03-21 2010-08-24 Applied Materials, Inc. Device and method for etching flash memory gate stacks comprising high-k dielectric
US8722547B2 (en) * 2006-04-20 2014-05-13 Applied Materials, Inc. Etching high K dielectrics with high selectivity to oxide containing layers at elevated temperatures with BC13 based etch chemistries
US7628866B2 (en) * 2006-11-23 2009-12-08 United Microelectronics Corp. Method of cleaning wafer after etching process
JP2008258349A (ja) * 2007-04-04 2008-10-23 Nec Electronics Corp 半導体装置の製造方法
KR20130092574A (ko) * 2010-08-04 2013-08-20 어플라이드 머티어리얼스, 인코포레이티드 기판 표면으로부터 오염물들 및 자연 산화물들을 제거하는 방법
US9437449B2 (en) * 2012-12-31 2016-09-06 Texas Instruments Incorporated Uniform, damage free nitride etch
US20140186544A1 (en) * 2013-01-02 2014-07-03 Applied Materials, Inc. Metal processing using high density plasma
JP2014189442A (ja) * 2013-03-27 2014-10-06 Sumitomo Electric Ind Ltd 炭化珪素半導体基板の製造方法
US8975706B2 (en) 2013-08-06 2015-03-10 Intermolecular, Inc. Gate stacks including TaXSiYO for MOSFETS
KR102245729B1 (ko) 2013-08-09 2021-04-28 어플라이드 머티어리얼스, 인코포레이티드 에피택셜 성장 이전에 기판 표면을 사전 세정하기 위한 방법 및 장치
US8945414B1 (en) 2013-11-13 2015-02-03 Intermolecular, Inc. Oxide removal by remote plasma treatment with fluorine and oxygen radicals
US9653291B2 (en) * 2014-11-13 2017-05-16 Applied Materials, Inc. Method for removing native oxide and residue from a III-V group containing surface
WO2018052477A2 (en) * 2016-09-15 2018-03-22 Applied Materials, Inc. An integrated method for wafer outgassing reduction
JP7373302B2 (ja) * 2019-05-15 2023-11-02 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
US12272558B2 (en) * 2022-05-09 2025-04-08 Tokyo Electron Limited Selective and isotropic etch of silicon over silicon-germanium alloys and dielectrics; via new chemistry and surface modification
CN115458409A (zh) * 2022-08-25 2022-12-09 上海华力集成电路制造有限公司 一种SiGe沟道的形成方法
CN117802582B (zh) * 2024-03-01 2024-08-06 浙江求是半导体设备有限公司 外延炉清洗方法和N型SiC的制备方法
CN120977894A (zh) * 2024-05-15 2025-11-18 盛美半导体设备(上海)股份有限公司 种子层预处理装置及方法、基板处理设备

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JPH03288432A (ja) * 1990-04-04 1991-12-18 Nippon Telegr & Teleph Corp <Ntt> 表面清浄化法
JPH042125A (ja) * 1990-04-19 1992-01-07 Fujitsu Ltd シリコンの表面処理方法
JPH0496226A (ja) * 1990-08-03 1992-03-27 Fujitsu Ltd 半導体装置の製造方法
JPH07263672A (ja) * 1991-10-17 1995-10-13 Nec Corp 半導体装置の製造方法および製造装置
JPH0737823A (ja) * 1993-07-21 1995-02-07 Oki Electric Ind Co Ltd 半導体膜形成方法及び半導体膜形成装置
JPH0786240A (ja) * 1993-09-10 1995-03-31 Hitachi Ltd 表面処理装置
WO1997015069A1 (en) * 1995-10-19 1997-04-24 Massachusetts Institute Of Technology Metals removal process
US5869405A (en) * 1996-01-03 1999-02-09 Micron Technology, Inc. In situ rapid thermal etch and rapid thermal oxidation
EP1048064A1 (en) 1998-01-13 2000-11-02 Applied Materials, Inc. Etching methods for anisotropic platinum profile
US6703290B2 (en) 1999-07-14 2004-03-09 Seh America, Inc. Growth of epitaxial semiconductor material with improved crystallographic properties
JP4910231B2 (ja) * 2000-10-25 2012-04-04 ソニー株式会社 半導体装置の製造方法
JP4060580B2 (ja) 2001-11-29 2008-03-12 株式会社ルネサステクノロジ ヘテロ接合バイポーラトランジスタ
JP2004128281A (ja) * 2002-10-03 2004-04-22 Tokyo Electron Ltd 基板処理方法および基板処理装置
US6774000B2 (en) * 2002-11-20 2004-08-10 International Business Machines Corporation Method of manufacture of MOSFET device with in-situ doped, raised source and drain structures
US6949451B2 (en) 2003-03-10 2005-09-27 Taiwan Semiconductor Manufacturing Company, Ltd. SOI chip with recess-resistant buried insulator and method of manufacturing the same
JP2005019463A (ja) * 2003-06-23 2005-01-20 Toshiba Corp 半導体装置
JP3929939B2 (ja) * 2003-06-25 2007-06-13 株式会社東芝 処理装置、製造装置、処理方法及び電子装置の製造方法
US20050048742A1 (en) * 2003-08-26 2005-03-03 Tokyo Electron Limited Multiple grow-etch cyclic surface treatment for substrate preparation
US7037816B2 (en) 2004-01-23 2006-05-02 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for integration of HfO2 and RTCVD poly-silicon

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08593B2 (ja) 1988-07-07 1996-01-10 ウイルキンソン・スウオード・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフトウング かみそり刃単位体の供給装置

Also Published As

Publication number Publication date
TW200737346A (en) 2007-10-01
WO2007126460A1 (en) 2007-11-08
JP2014053643A (ja) 2014-03-20
JP2009532860A (ja) 2009-09-10
TWI343079B (en) 2011-06-01
US7501349B2 (en) 2009-03-10
US20070238302A1 (en) 2007-10-11

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