TWI343079B - Sequential oxide removal using fluorine and hydrogen - Google Patents

Sequential oxide removal using fluorine and hydrogen Download PDF

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Publication number
TWI343079B
TWI343079B TW096110752A TW96110752A TWI343079B TW I343079 B TWI343079 B TW I343079B TW 096110752 A TW096110752 A TW 096110752A TW 96110752 A TW96110752 A TW 96110752A TW I343079 B TWI343079 B TW I343079B
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TW
Taiwan
Prior art keywords
substrate
processing
temperature
film
gas
Prior art date
Application number
TW096110752A
Other languages
English (en)
Chinese (zh)
Other versions
TW200737346A (en
Inventor
Anthony Dip
Allen J Leith
Seungho Oh
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200737346A publication Critical patent/TW200737346A/zh
Application granted granted Critical
Publication of TWI343079B publication Critical patent/TWI343079B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/12—Cleaning before device manufacture, i.e. Begin-Of-Line process by dry cleaning only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H10P14/271—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials characterised by the preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/36—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done before the formation of the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials
    • H10P70/234—Cleaning during device manufacture during, before or after processing of insulating materials the processing being the formation of vias or contact holes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection

Landscapes

  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
TW096110752A 2006-03-31 2007-03-28 Sequential oxide removal using fluorine and hydrogen TWI343079B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/393,736 US7501349B2 (en) 2006-03-31 2006-03-31 Sequential oxide removal using fluorine and hydrogen

Publications (2)

Publication Number Publication Date
TW200737346A TW200737346A (en) 2007-10-01
TWI343079B true TWI343079B (en) 2011-06-01

Family

ID=38575877

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096110752A TWI343079B (en) 2006-03-31 2007-03-28 Sequential oxide removal using fluorine and hydrogen

Country Status (4)

Country Link
US (1) US7501349B2 (https=)
JP (2) JP5638238B2 (https=)
TW (1) TWI343079B (https=)
WO (1) WO2007126460A1 (https=)

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US7780862B2 (en) * 2006-03-21 2010-08-24 Applied Materials, Inc. Device and method for etching flash memory gate stacks comprising high-k dielectric
US8722547B2 (en) * 2006-04-20 2014-05-13 Applied Materials, Inc. Etching high K dielectrics with high selectivity to oxide containing layers at elevated temperatures with BC13 based etch chemistries
US7628866B2 (en) * 2006-11-23 2009-12-08 United Microelectronics Corp. Method of cleaning wafer after etching process
JP2008258349A (ja) * 2007-04-04 2008-10-23 Nec Electronics Corp 半導体装置の製造方法
KR20130092574A (ko) * 2010-08-04 2013-08-20 어플라이드 머티어리얼스, 인코포레이티드 기판 표면으로부터 오염물들 및 자연 산화물들을 제거하는 방법
US9437449B2 (en) * 2012-12-31 2016-09-06 Texas Instruments Incorporated Uniform, damage free nitride etch
US20140186544A1 (en) * 2013-01-02 2014-07-03 Applied Materials, Inc. Metal processing using high density plasma
JP2014189442A (ja) * 2013-03-27 2014-10-06 Sumitomo Electric Ind Ltd 炭化珪素半導体基板の製造方法
US8975706B2 (en) 2013-08-06 2015-03-10 Intermolecular, Inc. Gate stacks including TaXSiYO for MOSFETS
KR102245729B1 (ko) 2013-08-09 2021-04-28 어플라이드 머티어리얼스, 인코포레이티드 에피택셜 성장 이전에 기판 표면을 사전 세정하기 위한 방법 및 장치
US8945414B1 (en) 2013-11-13 2015-02-03 Intermolecular, Inc. Oxide removal by remote plasma treatment with fluorine and oxygen radicals
US9653291B2 (en) * 2014-11-13 2017-05-16 Applied Materials, Inc. Method for removing native oxide and residue from a III-V group containing surface
WO2018052477A2 (en) * 2016-09-15 2018-03-22 Applied Materials, Inc. An integrated method for wafer outgassing reduction
JP7373302B2 (ja) * 2019-05-15 2023-11-02 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
US12272558B2 (en) * 2022-05-09 2025-04-08 Tokyo Electron Limited Selective and isotropic etch of silicon over silicon-germanium alloys and dielectrics; via new chemistry and surface modification
CN115458409A (zh) * 2022-08-25 2022-12-09 上海华力集成电路制造有限公司 一种SiGe沟道的形成方法
CN117802582B (zh) * 2024-03-01 2024-08-06 浙江求是半导体设备有限公司 外延炉清洗方法和N型SiC的制备方法
CN120977894A (zh) * 2024-05-15 2025-11-18 盛美半导体设备(上海)股份有限公司 种子层预处理装置及方法、基板处理设备

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JPH042125A (ja) * 1990-04-19 1992-01-07 Fujitsu Ltd シリコンの表面処理方法
JPH0496226A (ja) * 1990-08-03 1992-03-27 Fujitsu Ltd 半導体装置の製造方法
JPH07263672A (ja) * 1991-10-17 1995-10-13 Nec Corp 半導体装置の製造方法および製造装置
JPH0737823A (ja) * 1993-07-21 1995-02-07 Oki Electric Ind Co Ltd 半導体膜形成方法及び半導体膜形成装置
JPH0786240A (ja) * 1993-09-10 1995-03-31 Hitachi Ltd 表面処理装置
WO1997015069A1 (en) * 1995-10-19 1997-04-24 Massachusetts Institute Of Technology Metals removal process
US5869405A (en) * 1996-01-03 1999-02-09 Micron Technology, Inc. In situ rapid thermal etch and rapid thermal oxidation
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Also Published As

Publication number Publication date
JP5638238B2 (ja) 2014-12-10
TW200737346A (en) 2007-10-01
WO2007126460A1 (en) 2007-11-08
JP2014053643A (ja) 2014-03-20
JP2009532860A (ja) 2009-09-10
US7501349B2 (en) 2009-03-10
US20070238302A1 (en) 2007-10-11

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