JP2009516859A - １９３ｎｍ浸漬リソグラフィのための水でキャスト可能で水で剥離可能なトップコート - Google Patents

１９３ｎｍ浸漬リソグラフィのための水でキャスト可能で水で剥離可能なトップコート Download PDF

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Publication number
JP2009516859A
JP2009516859A JP2008540550A JP2008540550A JP2009516859A JP 2009516859 A JP2009516859 A JP 2009516859A JP 2008540550 A JP2008540550 A JP 2008540550A JP 2008540550 A JP2008540550 A JP 2008540550A JP 2009516859 A JP2009516859 A JP 2009516859A
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JP
Japan
Prior art keywords
water
topcoat
polymer
photoresist
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
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JP2008540550A
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English (en)
Japanese (ja)
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JP2009516859A5 (enExample
Inventor
ブロック、フィリップ、ジョー
チャ、ジェニファー
ギル、ダリオ
ラーソン、カール、エリック
サンドバーグ、リンダ、カーリン
ワルラフ、グレゴリー
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International Business Machines Corp
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International Business Machines Corp
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Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JP2009516859A publication Critical patent/JP2009516859A/ja
Publication of JP2009516859A5 publication Critical patent/JP2009516859A5/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D129/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal, or ketal radical; Coating compositions based on hydrolysed polymers of esters of unsaturated alcohols with saturated carboxylic acids; Coating compositions based on derivatives of such polymers
    • C09D129/02—Homopolymers or copolymers of unsaturated alcohols
    • C09D129/04—Polyvinyl alcohol; Partially hydrolysed homopolymers or copolymers of esters of unsaturated alcohols with saturated carboxylic acids
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D131/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an acyloxy radical of a saturated carboxylic acid, of carbonic acid, or of a haloformic acid; Coating compositions based on derivatives of such polymers
    • C09D131/02—Homopolymers or copolymers of esters of monocarboxylic acids
    • C09D131/04—Homopolymers or copolymers of vinyl acetate
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Structural Engineering (AREA)
  • Architecture (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Paints Or Removers (AREA)
JP2008540550A 2005-11-21 2006-10-13 １９３ｎｍ浸漬リソグラフィのための水でキャスト可能で水で剥離可能なトップコート Pending JP2009516859A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/284,358 US20070117040A1 (en) 2005-11-21 2005-11-21 Water castable-water strippable top coats for 193 nm immersion lithography
PCT/EP2006/067371 WO2007057263A1 (en) 2005-11-21 2006-10-13 Water castable - water strippable top coats for 193 nm immersion lithography

Publications (2)

Publication Number Publication Date
JP2009516859A true JP2009516859A (ja) 2009-04-23
JP2009516859A5 JP2009516859A5 (enExample) 2010-04-08

Family

ID=37507847

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008540550A Pending JP2009516859A (ja) 2005-11-21 2006-10-13 １９３ｎｍ浸漬リソグラフィのための水でキャスト可能で水で剥離可能なトップコート

Country Status (9)

Country Link
US (1) US20070117040A1 (enExample)
EP (1) EP1951829B1 (enExample)
JP (1) JP2009516859A (enExample)
KR (1) KR101013051B1 (enExample)
CN (1) CN101300317B (enExample)
AT (1) ATE451433T1 (enExample)
DE (1) DE602006011049D1 (enExample)
TW (1) TW200732850A (enExample)
WO (1) WO2007057263A1 (enExample)

Cited By (1)

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Publication number Priority date Publication date Assignee Title
CN116003665A (zh) * 2021-10-22 2023-04-25 上海芯刻微材料技术有限责任公司 一种聚合物及含其的193nm光刻用顶涂层膜的制备方法

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US20080047930A1 (en) * 2006-08-23 2008-02-28 Graciela Beatriz Blanchet Method to form a pattern of functional material on a substrate
US20090042148A1 (en) * 2007-08-06 2009-02-12 Munirathna Padmanaban Photoresist Composition for Deep UV and Process Thereof
US8163468B2 (en) * 2008-03-10 2012-04-24 Micron Technology, Inc. Method of reducing photoresist defects during fabrication of a semiconductor device
US8097401B2 (en) 2009-03-24 2012-01-17 International Business Machines Corporation Self-forming top anti-reflective coating compositions and, photoresist mixtures and method of imaging using same
US8889341B2 (en) * 2012-08-22 2014-11-18 Eastman Kodak Company Negative-working lithographic printing plate precursors and use
TWI639179B (zh) 2014-01-31 2018-10-21 美商蘭姆研究公司 真空整合硬遮罩製程及設備
US10566212B2 (en) 2016-12-19 2020-02-18 Lam Research Corporation Designer atomic layer etching
US10276440B2 (en) 2017-01-19 2019-04-30 Honeywell International Inc. Removable temporary protective layers for use in semiconductor manufacturing
US10796912B2 (en) * 2017-05-16 2020-10-06 Lam Research Corporation Eliminating yield impact of stochastics in lithography
CN113039486B (zh) 2018-11-14 2024-11-12 朗姆研究公司 可用于下一代光刻法中的硬掩模制作方法
CN113227909B (zh) 2018-12-20 2025-07-04 朗姆研究公司 抗蚀剂的干式显影
TW202514246A (zh) 2019-03-18 2025-04-01 美商蘭姆研究公司 基板處理方法與設備
US12062538B2 (en) 2019-04-30 2024-08-13 Lam Research Corporation Atomic layer etch and selective deposition process for extreme ultraviolet lithography resist improvement
TWI869221B (zh) 2019-06-26 2025-01-01 美商蘭姆研究公司 利用鹵化物化學品的光阻顯影
KR20250007037A (ko) 2020-01-15 2025-01-13 램 리써치 코포레이션 포토레지스트 부착 및 선량 감소를 위한 하부층
WO2021173557A1 (en) 2020-02-28 2021-09-02 Lam Research Corporation Multi-layer hardmask for defect reduction in euv patterning
TWI876020B (zh) 2020-04-03 2025-03-11 美商蘭姆研究公司 處理光阻的方法、以及用於沉積薄膜的設備
CN116626993A (zh) 2020-07-07 2023-08-22 朗姆研究公司 用于图案化辐射光致抗蚀剂图案化的集成干燥工艺
JP7562696B2 (ja) 2020-11-13 2024-10-07 ラム リサーチ コーポレーション フォトレジストのドライ除去用プロセスツール

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JPH0737793A (ja) * 1993-07-23 1995-02-07 Sanyo Electric Co Ltd 半導体装置の製造方法
JPH08305031A (ja) * 1995-04-28 1996-11-22 Shin Etsu Chem Co Ltd 化学増幅型レジスト用保護膜材料
JPH09139343A (ja) * 1995-09-12 1997-05-27 Toshiba Corp 基板処理装置及びパターン形成方法
JP2005316387A (ja) * 2004-04-27 2005-11-10 Hynix Semiconductor Inc 上部反射防止膜（ＴｏｐＡｎｔｉ−ＲｅｆｌｅｃｔｉｖｅＣｏａｔｉｎｇ；ＴＡＲＣ）の重合体およびこの製造方法、並びにこれを含む上部反射防止膜の組成物

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JPH0737793A (ja) * 1993-07-23 1995-02-07 Sanyo Electric Co Ltd 半導体装置の製造方法
JPH08305031A (ja) * 1995-04-28 1996-11-22 Shin Etsu Chem Co Ltd 化学増幅型レジスト用保護膜材料
JPH09139343A (ja) * 1995-09-12 1997-05-27 Toshiba Corp 基板処理装置及びパターン形成方法
JP2005316387A (ja) * 2004-04-27 2005-11-10 Hynix Semiconductor Inc 上部反射防止膜（ＴｏｐＡｎｔｉ−ＲｅｆｌｅｃｔｉｖｅＣｏａｔｉｎｇ；ＴＡＲＣ）の重合体およびこの製造方法、並びにこれを含む上部反射防止膜の組成物

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116003665A (zh) * 2021-10-22 2023-04-25 上海芯刻微材料技术有限责任公司 一种聚合物及含其的193nm光刻用顶涂层膜的制备方法
CN116003665B (zh) * 2021-10-22 2024-03-29 上海芯刻微材料技术有限责任公司 一种聚合物及含其的193nm光刻用顶涂层膜的制备方法

Also Published As

Publication number Publication date
DE602006011049D1 (de) 2010-01-21
ATE451433T1 (de) 2009-12-15
EP1951829B1 (en) 2009-12-09
TW200732850A (en) 2007-09-01
CN101300317A (zh) 2008-11-05
KR101013051B1 (ko) 2011-02-14
EP1951829A1 (en) 2008-08-06
KR20080068692A (ko) 2008-07-23
WO2007057263A1 (en) 2007-05-24
US20070117040A1 (en) 2007-05-24
CN101300317B (zh) 2012-02-01

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