JP2009516859A5 - - Google Patents

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Publication number
JP2009516859A5
JP2009516859A5 JP2008540550A JP2008540550A JP2009516859A5 JP 2009516859 A5 JP2009516859 A5 JP 2009516859A5 JP 2008540550 A JP2008540550 A JP 2008540550A JP 2008540550 A JP2008540550 A JP 2008540550A JP 2009516859 A5 JP2009516859 A5 JP 2009516859A5
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JP
Japan
Prior art keywords
layer
coated substrate
polymer
photoresist layer
material layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2008540550A
Other languages
English (en)
Japanese (ja)
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JP2009516859A (ja
Filing date
Publication date
Priority claimed from US11/284,358 external-priority patent/US20070117040A1/en
Application filed filed Critical
Publication of JP2009516859A publication Critical patent/JP2009516859A/ja
Publication of JP2009516859A5 publication Critical patent/JP2009516859A5/ja
Pending legal-status Critical Current

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JP2008540550A 2005-11-21 2006-10-13 １９３ｎｍ浸漬リソグラフィのための水でキャスト可能で水で剥離可能なトップコート Pending JP2009516859A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/284,358 US20070117040A1 (en) 2005-11-21 2005-11-21 Water castable-water strippable top coats for 193 nm immersion lithography
PCT/EP2006/067371 WO2007057263A1 (en) 2005-11-21 2006-10-13 Water castable - water strippable top coats for 193 nm immersion lithography

Publications (2)

Publication Number Publication Date
JP2009516859A JP2009516859A (ja) 2009-04-23
JP2009516859A5 true JP2009516859A5 (enExample) 2010-04-08

Family

ID=37507847

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008540550A Pending JP2009516859A (ja) 2005-11-21 2006-10-13 １９３ｎｍ浸漬リソグラフィのための水でキャスト可能で水で剥離可能なトップコート

Country Status (9)

Country Link
US (1) US20070117040A1 (enExample)
EP (1) EP1951829B1 (enExample)
JP (1) JP2009516859A (enExample)
KR (1) KR101013051B1 (enExample)
CN (1) CN101300317B (enExample)
AT (1) ATE451433T1 (enExample)
DE (1) DE602006011049D1 (enExample)
TW (1) TW200732850A (enExample)
WO (1) WO2007057263A1 (enExample)

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US20080047930A1 (en) * 2006-08-23 2008-02-28 Graciela Beatriz Blanchet Method to form a pattern of functional material on a substrate
US20090042148A1 (en) * 2007-08-06 2009-02-12 Munirathna Padmanaban Photoresist Composition for Deep UV and Process Thereof
US8163468B2 (en) * 2008-03-10 2012-04-24 Micron Technology, Inc. Method of reducing photoresist defects during fabrication of a semiconductor device
US8097401B2 (en) 2009-03-24 2012-01-17 International Business Machines Corporation Self-forming top anti-reflective coating compositions and, photoresist mixtures and method of imaging using same
US8889341B2 (en) * 2012-08-22 2014-11-18 Eastman Kodak Company Negative-working lithographic printing plate precursors and use
TWI639179B (zh) 2014-01-31 2018-10-21 美商蘭姆研究公司 真空整合硬遮罩製程及設備
US10566212B2 (en) 2016-12-19 2020-02-18 Lam Research Corporation Designer atomic layer etching
US10276440B2 (en) 2017-01-19 2019-04-30 Honeywell International Inc. Removable temporary protective layers for use in semiconductor manufacturing
US10796912B2 (en) * 2017-05-16 2020-10-06 Lam Research Corporation Eliminating yield impact of stochastics in lithography
CN113039486B (zh) 2018-11-14 2024-11-12 朗姆研究公司 可用于下一代光刻法中的硬掩模制作方法
CN113227909B (zh) 2018-12-20 2025-07-04 朗姆研究公司 抗蚀剂的干式显影
TW202514246A (zh) 2019-03-18 2025-04-01 美商蘭姆研究公司 基板處理方法與設備
US12062538B2 (en) 2019-04-30 2024-08-13 Lam Research Corporation Atomic layer etch and selective deposition process for extreme ultraviolet lithography resist improvement
TWI869221B (zh) 2019-06-26 2025-01-01 美商蘭姆研究公司 利用鹵化物化學品的光阻顯影
KR20250007037A (ko) 2020-01-15 2025-01-13 램 리써치 코포레이션 포토레지스트 부착 및 선량 감소를 위한 하부층
WO2021173557A1 (en) 2020-02-28 2021-09-02 Lam Research Corporation Multi-layer hardmask for defect reduction in euv patterning
TWI876020B (zh) 2020-04-03 2025-03-11 美商蘭姆研究公司 處理光阻的方法、以及用於沉積薄膜的設備
CN116626993A (zh) 2020-07-07 2023-08-22 朗姆研究公司 用于图案化辐射光致抗蚀剂图案化的集成干燥工艺
JP7562696B2 (ja) 2020-11-13 2024-10-07 ラム リサーチ コーポレーション フォトレジストのドライ除去用プロセスツール
CN116003665B (zh) * 2021-10-22 2024-03-29 上海芯刻微材料技术有限责任公司 一种聚合物及含其的193nm光刻用顶涂层膜的制备方法

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JP4551701B2 (ja) * 2004-06-14 2010-09-29 富士フイルム株式会社 液浸露光用保護膜形成組成物及びそれを用いたパターン形成方法
US7049047B2 (en) * 2004-08-10 2006-05-23 Eastman Kodak Company Imageable element with masking layer comprising sulfated polymer
US7183036B2 (en) * 2004-11-12 2007-02-27 International Business Machines Corporation Low activation energy positive resist
US7288362B2 (en) * 2005-02-23 2007-10-30 International Business Machines Corporation Immersion topcoat materials with improved performance

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