ATE451433T1 - Wässrige sowohl auftrag- als auch wiederabziehbare deckschichten für die immersionslithographie bei 193 nm - Google Patents

Wässrige sowohl auftrag- als auch wiederabziehbare deckschichten für die immersionslithographie bei 193 nm

Info

Publication number
ATE451433T1
ATE451433T1 AT06794016T AT06794016T ATE451433T1 AT E451433 T1 ATE451433 T1 AT E451433T1 AT 06794016 T AT06794016 T AT 06794016T AT 06794016 T AT06794016 T AT 06794016T AT E451433 T1 ATE451433 T1 AT E451433T1
Authority
AT
Austria
Prior art keywords
topcoat material
immersion lithography
water
poly vinyl
aqueous
Prior art date
Application number
AT06794016T
Other languages
German (de)
English (en)
Inventor
philip Brock
Jennifer Cha
Dario Gil
Carl Larson
Linda Sundberg
Gregory Wallraff
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of ATE451433T1 publication Critical patent/ATE451433T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D129/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal, or ketal radical; Coating compositions based on hydrolysed polymers of esters of unsaturated alcohols with saturated carboxylic acids; Coating compositions based on derivatives of such polymers
    • C09D129/02—Homopolymers or copolymers of unsaturated alcohols
    • C09D129/04—Polyvinyl alcohol; Partially hydrolysed homopolymers or copolymers of esters of unsaturated alcohols with saturated carboxylic acids
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D131/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an acyloxy radical of a saturated carboxylic acid, of carbonic acid, or of a haloformic acid; Coating compositions based on derivatives of such polymers
    • C09D131/02—Homopolymers or copolymers of esters of monocarboxylic acids
    • C09D131/04—Homopolymers or copolymers of vinyl acetate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Structural Engineering (AREA)
  • Architecture (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Paints Or Removers (AREA)
AT06794016T 2005-11-21 2006-10-13 Wässrige sowohl auftrag- als auch wiederabziehbare deckschichten für die immersionslithographie bei 193 nm ATE451433T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/284,358 US20070117040A1 (en) 2005-11-21 2005-11-21 Water castable-water strippable top coats for 193 nm immersion lithography
PCT/EP2006/067371 WO2007057263A1 (en) 2005-11-21 2006-10-13 Water castable - water strippable top coats for 193 nm immersion lithography

Publications (1)

Publication Number Publication Date
ATE451433T1 true ATE451433T1 (de) 2009-12-15

Family

ID=37507847

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06794016T ATE451433T1 (de) 2005-11-21 2006-10-13 Wässrige sowohl auftrag- als auch wiederabziehbare deckschichten für die immersionslithographie bei 193 nm

Country Status (9)

Country Link
US (1) US20070117040A1 (enExample)
EP (1) EP1951829B1 (enExample)
JP (1) JP2009516859A (enExample)
KR (1) KR101013051B1 (enExample)
CN (1) CN101300317B (enExample)
AT (1) ATE451433T1 (enExample)
DE (1) DE602006011049D1 (enExample)
TW (1) TW200732850A (enExample)
WO (1) WO2007057263A1 (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080047930A1 (en) * 2006-08-23 2008-02-28 Graciela Beatriz Blanchet Method to form a pattern of functional material on a substrate
US20090042148A1 (en) * 2007-08-06 2009-02-12 Munirathna Padmanaban Photoresist Composition for Deep UV and Process Thereof
US8163468B2 (en) * 2008-03-10 2012-04-24 Micron Technology, Inc. Method of reducing photoresist defects during fabrication of a semiconductor device
US8097401B2 (en) 2009-03-24 2012-01-17 International Business Machines Corporation Self-forming top anti-reflective coating compositions and, photoresist mixtures and method of imaging using same
US8889341B2 (en) * 2012-08-22 2014-11-18 Eastman Kodak Company Negative-working lithographic printing plate precursors and use
TWI639179B (zh) 2014-01-31 2018-10-21 美商蘭姆研究公司 真空整合硬遮罩製程及設備
US10566212B2 (en) 2016-12-19 2020-02-18 Lam Research Corporation Designer atomic layer etching
US10276440B2 (en) 2017-01-19 2019-04-30 Honeywell International Inc. Removable temporary protective layers for use in semiconductor manufacturing
US10796912B2 (en) * 2017-05-16 2020-10-06 Lam Research Corporation Eliminating yield impact of stochastics in lithography
CN113039486B (zh) 2018-11-14 2024-11-12 朗姆研究公司 可用于下一代光刻法中的硬掩模制作方法
CN113227909B (zh) 2018-12-20 2025-07-04 朗姆研究公司 抗蚀剂的干式显影
TW202514246A (zh) 2019-03-18 2025-04-01 美商蘭姆研究公司 基板處理方法與設備
US12062538B2 (en) 2019-04-30 2024-08-13 Lam Research Corporation Atomic layer etch and selective deposition process for extreme ultraviolet lithography resist improvement
TWI869221B (zh) 2019-06-26 2025-01-01 美商蘭姆研究公司 利用鹵化物化學品的光阻顯影
KR20250007037A (ko) 2020-01-15 2025-01-13 램 리써치 코포레이션 포토레지스트 부착 및 선량 감소를 위한 하부층
WO2021173557A1 (en) 2020-02-28 2021-09-02 Lam Research Corporation Multi-layer hardmask for defect reduction in euv patterning
TWI876020B (zh) 2020-04-03 2025-03-11 美商蘭姆研究公司 處理光阻的方法、以及用於沉積薄膜的設備
CN116626993A (zh) 2020-07-07 2023-08-22 朗姆研究公司 用于图案化辐射光致抗蚀剂图案化的集成干燥工艺
JP7562696B2 (ja) 2020-11-13 2024-10-07 ラム リサーチ コーポレーション フォトレジストのドライ除去用プロセスツール
CN116003665B (zh) * 2021-10-22 2024-03-29 上海芯刻微材料技术有限责任公司 一种聚合物及含其的193nm光刻用顶涂层膜的制备方法

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1772074C3 (de) * 1967-03-29 1975-10-02 Fuji Shashin Film K.K., Ashigara, Kanagawa (Japan) Verfahren zur Herstellung einer farbphotographisclten Silberhalogenidemulsion
DE3825836A1 (de) * 1988-07-29 1990-02-08 Hoechst Ag Photopolymerisierbares aufzeichnungsmaterial
US5273862A (en) * 1988-07-29 1993-12-28 Hoechst Aktiengesellschaft Photopolymerizable recording material comprising a cover layer substantially impermeable to oxygen, binds oxygen and is soluble in water at 20°C.
US5240812A (en) * 1990-09-18 1993-08-31 International Business Machines Corporation Top coat for acid catalyzed resists
JP2643056B2 (ja) * 1991-06-28 1997-08-20 インターナショナル・ビジネス・マシーンズ・コーポレイション 表面反射防止コーティング形成組成物及びその使用
US5330883A (en) * 1992-06-29 1994-07-19 Lsi Logic Corporation Techniques for uniformizing photoresist thickness and critical dimension of underlying features
JPH0737793A (ja) * 1993-07-23 1995-02-07 Sanyo Electric Co Ltd 半導体装置の製造方法
JP2985729B2 (ja) * 1995-04-28 1999-12-06 信越化学工業株式会社 化学増幅型レジスト用保護膜材料
JP3284056B2 (ja) * 1995-09-12 2002-05-20 株式会社東芝 基板処理装置及びパターン形成方法
US5879853A (en) * 1996-01-18 1999-03-09 Kabushiki Kaisha Toshiba Top antireflective coating material and its process for DUV and VUV lithography systems
US6274295B1 (en) * 1997-03-06 2001-08-14 Clariant Finance (Bvi) Limited Light-absorbing antireflective layers with improved performance due to refractive index optimization
JP2000089471A (ja) * 1998-09-14 2000-03-31 Sharp Corp レジストパターンの形成方法
US6232038B1 (en) * 1998-10-07 2001-05-15 Mitsubishi Chemical Corporation Photosensitive composition, image-forming material and image-forming method employing it
CN1267000A (zh) * 1999-03-11 2000-09-20 国际商业机器公司 环状烯烃聚合物和添加剂的光刻胶组合物
US6251560B1 (en) * 2000-05-05 2001-06-26 International Business Machines Corporation Photoresist compositions with cyclic olefin polymers having lactone moiety
JP3769171B2 (ja) * 2000-05-17 2006-04-19 東京応化工業株式会社 フレキソ印刷版製造用多層感光材料
US6635401B2 (en) * 2001-06-21 2003-10-21 International Business Machines Corporation Resist compositions with polymers having 2-cyano acrylic monomer
JP2003098674A (ja) * 2001-09-21 2003-04-04 Fuji Photo Film Co Ltd 光重合性平版印刷版
JP2004189600A (ja) * 2002-10-16 2004-07-08 Fuji Photo Film Co Ltd インドリルフタリド化合物及びそれを用いた感熱記録材料
US7303785B2 (en) * 2003-06-03 2007-12-04 Shin-Etsu Chemical Co., Ltd. Antireflective film material, and antireflective film and pattern formation method using the same
KR100570211B1 (ko) * 2003-12-24 2006-04-12 주식회사 하이닉스반도체 유기 반사방지막용 가교제 중합체, 이를 포함하는 유기반사 방지막 조성물 및 이를 이용한 포토레지스트의 패턴형성 방법
US20050161644A1 (en) * 2004-01-23 2005-07-28 Peng Zhang Immersion lithography fluids
JP4355944B2 (ja) * 2004-04-16 2009-11-04 信越化学工業株式会社 パターン形成方法及びこれに用いるレジスト上層膜材料
KR100574490B1 (ko) * 2004-04-27 2006-04-27 주식회사 하이닉스반도체 상부 반사방지막 중합체, 이의 제조방법 및 이를 함유하는상부 반사방지막 조성물
JP4551701B2 (ja) * 2004-06-14 2010-09-29 富士フイルム株式会社 液浸露光用保護膜形成組成物及びそれを用いたパターン形成方法
US7049047B2 (en) * 2004-08-10 2006-05-23 Eastman Kodak Company Imageable element with masking layer comprising sulfated polymer
US7183036B2 (en) * 2004-11-12 2007-02-27 International Business Machines Corporation Low activation energy positive resist
US7288362B2 (en) * 2005-02-23 2007-10-30 International Business Machines Corporation Immersion topcoat materials with improved performance

Also Published As

Publication number Publication date
DE602006011049D1 (de) 2010-01-21
EP1951829B1 (en) 2009-12-09
TW200732850A (en) 2007-09-01
CN101300317A (zh) 2008-11-05
JP2009516859A (ja) 2009-04-23
KR101013051B1 (ko) 2011-02-14
EP1951829A1 (en) 2008-08-06
KR20080068692A (ko) 2008-07-23
WO2007057263A1 (en) 2007-05-24
US20070117040A1 (en) 2007-05-24
CN101300317B (zh) 2012-02-01

Similar Documents

Publication Publication Date Title
ATE451433T1 (de) Wässrige sowohl auftrag- als auch wiederabziehbare deckschichten für die immersionslithographie bei 193 nm
ATE474249T1 (de) Deckschichtmaterialien für die immersion- lithographie
Wu et al. Formation and properties of anchored polymers with a gradual variation of grafting densities on flat substrates
Yu et al. Methods for the topographical patterning and patterned surface modification of hydrogels based on hydroxyethyl methacrylate
Shah et al. Using atom transfer radical polymerization to amplify monolayers of initiators patterned by microcontact printing into polymer brushes for pattern transfer
Zhao et al. Using two-stage chemical amplification to determine the density of defects in self-assembled monolayers of alkanethiolates on gold
Li et al. Reactive superhydrophobic surface and its photoinduced disulfide-ene and thiol-ene (bio) functionalization
Velankar et al. Swelling-induced delamination causes folding of surface-tethered polymer gels
DE602007007726D1 (de) Verfahren und Zusammensetzung zur Zonenisolierung eines Bohrlochs
Sun et al. Assembly of multilayered films using well-defined, end-labeled poly (acrylic acid): Influence of molecular weight on exponential growth in a synthetic weak polyelectrolyte system
Zhang et al. Strain-controlled switching of hierarchically wrinkled surfaces between superhydrophobicity and superhydrophilicity
DE69912921D1 (de) Lithographische druckplatten zum gebrauch in einem laser-bilderzeugungsgerät
Kaholek et al. Weak polyelectrolyte brush arrays fabricated by combining electron-beam lithography with surface-initiated photopolymerization
WO2008103776A3 (en) Thermally cured underlayer for lithographic application
JP2007523248A5 (enExample)
KR20200073235A (ko) 이온성 액체 함유 구조체의 제조 방법 및 이온성 액체 함유 구조체
Martin et al. Fabrication and application of hydrogel stampers for physisorptive microcontact printing
Chapman et al. Fabrication of two-component, brush-on-brush topographical microstructures by combination of atom-transfer radical polymerization with polymer end-functionalization and photopatterning
Müller et al. Quantifying diffuse and point inputs of perfluoroalkyl acids in a nonindustrial river catchment
WO2006011607A8 (ja) レジスト保護膜形成用材料、およびこれを用いたレジストパターン形成方法
Vandevelde et al. Direct patterning of molecularly imprinted microdot arrays for sensors and biochips
Chen et al. Morphology of nanostructured polymer brushes dependent on production and treatment
Poellmann et al. Multimaterial polyacrylamide: fabrication with electrohydrodynamic jet printing, applications, and modeling
JP2009513763A5 (enExample)
WO2011014020A3 (ko) 자가정렬 이중 패턴 형성용 포토레지스트 조성물

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties