TW200732850A - Water castable-water strippable top coats for 193 nm immersion lithography - Google Patents

Water castable-water strippable top coats for 193 nm immersion lithography

Info

Publication number
TW200732850A
TW200732850A TW095141318A TW95141318A TW200732850A TW 200732850 A TW200732850 A TW 200732850A TW 095141318 A TW095141318 A TW 095141318A TW 95141318 A TW95141318 A TW 95141318A TW 200732850 A TW200732850 A TW 200732850A
Authority
TW
Taiwan
Prior art keywords
water
topcoat
immersion lithography
topcoat material
poly vinyl
Prior art date
Application number
TW095141318A
Other languages
English (en)
Inventor
Phillip J Brock
Jennifer N Cha
Dario Gil
Carl E Larson
Linda K Sundberg
Gregory M Wallraff
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of TW200732850A publication Critical patent/TW200732850A/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D129/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal, or ketal radical; Coating compositions based on hydrolysed polymers of esters of unsaturated alcohols with saturated carboxylic acids; Coating compositions based on derivatives of such polymers
    • C09D129/02—Homopolymers or copolymers of unsaturated alcohols
    • C09D129/04—Polyvinyl alcohol; Partially hydrolysed homopolymers or copolymers of esters of unsaturated alcohols with saturated carboxylic acids
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D131/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an acyloxy radical of a saturated carboxylic acid, of carbonic acid, or of a haloformic acid; Coating compositions based on derivatives of such polymers
    • C09D131/02—Homopolymers or copolymers of esters of monocarboxylic acids
    • C09D131/04—Homopolymers or copolymers of vinyl acetate
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Structural Engineering (AREA)
  • Architecture (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Paints Or Removers (AREA)
TW095141318A 2005-11-21 2006-11-08 Water castable-water strippable top coats for 193 nm immersion lithography TW200732850A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/284,358 US20070117040A1 (en) 2005-11-21 2005-11-21 Water castable-water strippable top coats for 193 nm immersion lithography

Publications (1)

Publication Number Publication Date
TW200732850A true TW200732850A (en) 2007-09-01

Family

ID=37507847

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095141318A TW200732850A (en) 2005-11-21 2006-11-08 Water castable-water strippable top coats for 193 nm immersion lithography

Country Status (9)

Country Link
US (1) US20070117040A1 (zh)
EP (1) EP1951829B1 (zh)
JP (1) JP2009516859A (zh)
KR (1) KR101013051B1 (zh)
CN (1) CN101300317B (zh)
AT (1) ATE451433T1 (zh)
DE (1) DE602006011049D1 (zh)
TW (1) TW200732850A (zh)
WO (1) WO2007057263A1 (zh)

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US20090042148A1 (en) * 2007-08-06 2009-02-12 Munirathna Padmanaban Photoresist Composition for Deep UV and Process Thereof
US8163468B2 (en) * 2008-03-10 2012-04-24 Micron Technology, Inc. Method of reducing photoresist defects during fabrication of a semiconductor device
US8097401B2 (en) 2009-03-24 2012-01-17 International Business Machines Corporation Self-forming top anti-reflective coating compositions and, photoresist mixtures and method of imaging using same
US8889341B2 (en) 2012-08-22 2014-11-18 Eastman Kodak Company Negative-working lithographic printing plate precursors and use
KR102306612B1 (ko) 2014-01-31 2021-09-29 램 리써치 코포레이션 진공-통합된 하드마스크 프로세스 및 장치
US10566212B2 (en) 2016-12-19 2020-02-18 Lam Research Corporation Designer atomic layer etching
US10276440B2 (en) 2017-01-19 2019-04-30 Honeywell International Inc. Removable temporary protective layers for use in semiconductor manufacturing
US10796912B2 (en) * 2017-05-16 2020-10-06 Lam Research Corporation Eliminating yield impact of stochastics in lithography
JP2022507368A (ja) 2018-11-14 2022-01-18 ラム リサーチ コーポレーション 次世代リソグラフィにおいて有用なハードマスクを作製する方法
WO2021146138A1 (en) 2020-01-15 2021-07-22 Lam Research Corporation Underlayer for photoresist adhesion and dose reduction
CN116003665B (zh) * 2021-10-22 2024-03-29 上海芯刻微材料技术有限责任公司 一种聚合物及含其的193nm光刻用顶涂层膜的制备方法

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DE69214035T2 (de) * 1991-06-28 1997-04-10 Ibm Reflexionsverminderde Überzüge
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JP4551701B2 (ja) * 2004-06-14 2010-09-29 富士フイルム株式会社 液浸露光用保護膜形成組成物及びそれを用いたパターン形成方法
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Also Published As

Publication number Publication date
KR101013051B1 (ko) 2011-02-14
CN101300317B (zh) 2012-02-01
WO2007057263A1 (en) 2007-05-24
JP2009516859A (ja) 2009-04-23
DE602006011049D1 (de) 2010-01-21
US20070117040A1 (en) 2007-05-24
ATE451433T1 (de) 2009-12-15
EP1951829A1 (en) 2008-08-06
CN101300317A (zh) 2008-11-05
KR20080068692A (ko) 2008-07-23
EP1951829B1 (en) 2009-12-09

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