DE602006011049D1 - Wässrige sowohl auftrag- als auch wiederabziehbare deckschichten für die immersionslithographie bei 193 nm - Google Patents

Wässrige sowohl auftrag- als auch wiederabziehbare deckschichten für die immersionslithographie bei 193 nm

Info

Publication number
DE602006011049D1
DE602006011049D1 DE602006011049T DE602006011049T DE602006011049D1 DE 602006011049 D1 DE602006011049 D1 DE 602006011049D1 DE 602006011049 T DE602006011049 T DE 602006011049T DE 602006011049 T DE602006011049 T DE 602006011049T DE 602006011049 D1 DE602006011049 D1 DE 602006011049D1
Authority
DE
Germany
Prior art keywords
topcoat material
immersion
water
poly vinyl
slithography
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602006011049T
Other languages
German (de)
English (en)
Inventor
Philip Joe Brock
Jennifer Cha
Dario Gil
Carl Eric Larson
Linda Karin Sundberg
Gregory Wallraff
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE602006011049D1 publication Critical patent/DE602006011049D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D129/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal, or ketal radical; Coating compositions based on hydrolysed polymers of esters of unsaturated alcohols with saturated carboxylic acids; Coating compositions based on derivatives of such polymers
    • C09D129/02—Homopolymers or copolymers of unsaturated alcohols
    • C09D129/04—Polyvinyl alcohol; Partially hydrolysed homopolymers or copolymers of esters of unsaturated alcohols with saturated carboxylic acids
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D131/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an acyloxy radical of a saturated carboxylic acid, of carbonic acid, or of a haloformic acid; Coating compositions based on derivatives of such polymers
    • C09D131/02—Homopolymers or copolymers of esters of monocarboxylic acids
    • C09D131/04—Homopolymers or copolymers of vinyl acetate
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Structural Engineering (AREA)
  • Architecture (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Paints Or Removers (AREA)
DE602006011049T 2005-11-21 2006-10-13 Wässrige sowohl auftrag- als auch wiederabziehbare deckschichten für die immersionslithographie bei 193 nm Active DE602006011049D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/284,358 US20070117040A1 (en) 2005-11-21 2005-11-21 Water castable-water strippable top coats for 193 nm immersion lithography
PCT/EP2006/067371 WO2007057263A1 (en) 2005-11-21 2006-10-13 Water castable - water strippable top coats for 193 nm immersion lithography

Publications (1)

Publication Number Publication Date
DE602006011049D1 true DE602006011049D1 (de) 2010-01-21

Family

ID=37507847

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602006011049T Active DE602006011049D1 (de) 2005-11-21 2006-10-13 Wässrige sowohl auftrag- als auch wiederabziehbare deckschichten für die immersionslithographie bei 193 nm

Country Status (9)

Country Link
US (1) US20070117040A1 (enExample)
EP (1) EP1951829B1 (enExample)
JP (1) JP2009516859A (enExample)
KR (1) KR101013051B1 (enExample)
CN (1) CN101300317B (enExample)
AT (1) ATE451433T1 (enExample)
DE (1) DE602006011049D1 (enExample)
TW (1) TW200732850A (enExample)
WO (1) WO2007057263A1 (enExample)

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US8889341B2 (en) * 2012-08-22 2014-11-18 Eastman Kodak Company Negative-working lithographic printing plate precursors and use
TWI639179B (zh) 2014-01-31 2018-10-21 美商蘭姆研究公司 真空整合硬遮罩製程及設備
US10566212B2 (en) 2016-12-19 2020-02-18 Lam Research Corporation Designer atomic layer etching
US10276440B2 (en) 2017-01-19 2019-04-30 Honeywell International Inc. Removable temporary protective layers for use in semiconductor manufacturing
US10796912B2 (en) * 2017-05-16 2020-10-06 Lam Research Corporation Eliminating yield impact of stochastics in lithography
CN113039486B (zh) 2018-11-14 2024-11-12 朗姆研究公司 可用于下一代光刻法中的硬掩模制作方法
CN113227909B (zh) 2018-12-20 2025-07-04 朗姆研究公司 抗蚀剂的干式显影
TW202514246A (zh) 2019-03-18 2025-04-01 美商蘭姆研究公司 基板處理方法與設備
US12062538B2 (en) 2019-04-30 2024-08-13 Lam Research Corporation Atomic layer etch and selective deposition process for extreme ultraviolet lithography resist improvement
TWI869221B (zh) 2019-06-26 2025-01-01 美商蘭姆研究公司 利用鹵化物化學品的光阻顯影
KR20250007037A (ko) 2020-01-15 2025-01-13 램 리써치 코포레이션 포토레지스트 부착 및 선량 감소를 위한 하부층
WO2021173557A1 (en) 2020-02-28 2021-09-02 Lam Research Corporation Multi-layer hardmask for defect reduction in euv patterning
TWI876020B (zh) 2020-04-03 2025-03-11 美商蘭姆研究公司 處理光阻的方法、以及用於沉積薄膜的設備
CN116626993A (zh) 2020-07-07 2023-08-22 朗姆研究公司 用于图案化辐射光致抗蚀剂图案化的集成干燥工艺
JP7562696B2 (ja) 2020-11-13 2024-10-07 ラム リサーチ コーポレーション フォトレジストのドライ除去用プロセスツール
CN116003665B (zh) * 2021-10-22 2024-03-29 上海芯刻微材料技术有限责任公司 一种聚合物及含其的193nm光刻用顶涂层膜的制备方法

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Also Published As

Publication number Publication date
ATE451433T1 (de) 2009-12-15
EP1951829B1 (en) 2009-12-09
TW200732850A (en) 2007-09-01
CN101300317A (zh) 2008-11-05
JP2009516859A (ja) 2009-04-23
KR101013051B1 (ko) 2011-02-14
EP1951829A1 (en) 2008-08-06
KR20080068692A (ko) 2008-07-23
WO2007057263A1 (en) 2007-05-24
US20070117040A1 (en) 2007-05-24
CN101300317B (zh) 2012-02-01

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