CN101300317B - 用于193nm沉浸平版印刷的水可浇铸-水可剥离的面涂层 - Google Patents

用于193nm沉浸平版印刷的水可浇铸-水可剥离的面涂层 Download PDF

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Publication number
CN101300317B
CN101300317B CN2006800412452A CN200680041245A CN101300317B CN 101300317 B CN101300317 B CN 101300317B CN 2006800412452 A CN2006800412452 A CN 2006800412452A CN 200680041245 A CN200680041245 A CN 200680041245A CN 101300317 B CN101300317 B CN 101300317B
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China
Prior art keywords
water
soluble
polymer
topcoat
layer
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Expired - Fee Related
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CN2006800412452A
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English (en)
Chinese (zh)
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CN101300317A (zh
Inventor
P·J·布罗克
J·查
D·吉尔
C·E·拉尔森
L·K·森德伯格
G·沃尔拉夫
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International Business Machines Corp
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International Business Machines Corp
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Publication of CN101300317A publication Critical patent/CN101300317A/zh
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D129/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal, or ketal radical; Coating compositions based on hydrolysed polymers of esters of unsaturated alcohols with saturated carboxylic acids; Coating compositions based on derivatives of such polymers
    • C09D129/02—Homopolymers or copolymers of unsaturated alcohols
    • C09D129/04—Polyvinyl alcohol; Partially hydrolysed homopolymers or copolymers of esters of unsaturated alcohols with saturated carboxylic acids
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D131/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an acyloxy radical of a saturated carboxylic acid, of carbonic acid, or of a haloformic acid; Coating compositions based on derivatives of such polymers
    • C09D131/02—Homopolymers or copolymers of esters of monocarboxylic acids
    • C09D131/04—Homopolymers or copolymers of vinyl acetate
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Structural Engineering (AREA)
  • Architecture (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Paints Or Removers (AREA)
CN2006800412452A 2005-11-21 2006-10-13 用于193nm沉浸平版印刷的水可浇铸-水可剥离的面涂层 Expired - Fee Related CN101300317B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/284,358 2005-11-21
US11/284,358 US20070117040A1 (en) 2005-11-21 2005-11-21 Water castable-water strippable top coats for 193 nm immersion lithography
PCT/EP2006/067371 WO2007057263A1 (en) 2005-11-21 2006-10-13 Water castable - water strippable top coats for 193 nm immersion lithography

Publications (2)

Publication Number Publication Date
CN101300317A CN101300317A (zh) 2008-11-05
CN101300317B true CN101300317B (zh) 2012-02-01

Family

ID=37507847

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2006800412452A Expired - Fee Related CN101300317B (zh) 2005-11-21 2006-10-13 用于193nm沉浸平版印刷的水可浇铸-水可剥离的面涂层

Country Status (9)

Country Link
US (1) US20070117040A1 (enExample)
EP (1) EP1951829B1 (enExample)
JP (1) JP2009516859A (enExample)
KR (1) KR101013051B1 (enExample)
CN (1) CN101300317B (enExample)
AT (1) ATE451433T1 (enExample)
DE (1) DE602006011049D1 (enExample)
TW (1) TW200732850A (enExample)
WO (1) WO2007057263A1 (enExample)

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US20080047930A1 (en) * 2006-08-23 2008-02-28 Graciela Beatriz Blanchet Method to form a pattern of functional material on a substrate
US20090042148A1 (en) * 2007-08-06 2009-02-12 Munirathna Padmanaban Photoresist Composition for Deep UV and Process Thereof
US8163468B2 (en) * 2008-03-10 2012-04-24 Micron Technology, Inc. Method of reducing photoresist defects during fabrication of a semiconductor device
US8097401B2 (en) 2009-03-24 2012-01-17 International Business Machines Corporation Self-forming top anti-reflective coating compositions and, photoresist mixtures and method of imaging using same
US8889341B2 (en) * 2012-08-22 2014-11-18 Eastman Kodak Company Negative-working lithographic printing plate precursors and use
TWI639179B (zh) 2014-01-31 2018-10-21 美商蘭姆研究公司 真空整合硬遮罩製程及設備
US10566212B2 (en) 2016-12-19 2020-02-18 Lam Research Corporation Designer atomic layer etching
US10276440B2 (en) 2017-01-19 2019-04-30 Honeywell International Inc. Removable temporary protective layers for use in semiconductor manufacturing
US10796912B2 (en) * 2017-05-16 2020-10-06 Lam Research Corporation Eliminating yield impact of stochastics in lithography
CN113039486B (zh) 2018-11-14 2024-11-12 朗姆研究公司 可用于下一代光刻法中的硬掩模制作方法
CN113227909B (zh) 2018-12-20 2025-07-04 朗姆研究公司 抗蚀剂的干式显影
TW202514246A (zh) 2019-03-18 2025-04-01 美商蘭姆研究公司 基板處理方法與設備
US12062538B2 (en) 2019-04-30 2024-08-13 Lam Research Corporation Atomic layer etch and selective deposition process for extreme ultraviolet lithography resist improvement
TWI869221B (zh) 2019-06-26 2025-01-01 美商蘭姆研究公司 利用鹵化物化學品的光阻顯影
KR20250007037A (ko) 2020-01-15 2025-01-13 램 리써치 코포레이션 포토레지스트 부착 및 선량 감소를 위한 하부층
WO2021173557A1 (en) 2020-02-28 2021-09-02 Lam Research Corporation Multi-layer hardmask for defect reduction in euv patterning
TWI876020B (zh) 2020-04-03 2025-03-11 美商蘭姆研究公司 處理光阻的方法、以及用於沉積薄膜的設備
CN116626993A (zh) 2020-07-07 2023-08-22 朗姆研究公司 用于图案化辐射光致抗蚀剂图案化的集成干燥工艺
JP7562696B2 (ja) 2020-11-13 2024-10-07 ラム リサーチ コーポレーション フォトレジストのドライ除去用プロセスツール
CN116003665B (zh) * 2021-10-22 2024-03-29 上海芯刻微材料技术有限责任公司 一种聚合物及含其的193nm光刻用顶涂层膜的制备方法

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US5273862A (en) * 1988-07-29 1993-12-28 Hoechst Aktiengesellschaft Photopolymerizable recording material comprising a cover layer substantially impermeable to oxygen, binds oxygen and is soluble in water at 20°C.
CN1267000A (zh) * 1999-03-11 2000-09-20 国际商业机器公司 环状烯烃聚合物和添加剂的光刻胶组合物
CN1322967A (zh) * 2000-05-05 2001-11-21 国际商业机器公司 包括含有内酯部分的环烯聚合物的光致抗蚀剂组合物
CN1690098A (zh) * 2004-04-27 2005-11-02 海力士半导体有限公司 顶端抗反射涂料聚合物、制法及顶端抗反射涂料组合物

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US5273862A (en) * 1988-07-29 1993-12-28 Hoechst Aktiengesellschaft Photopolymerizable recording material comprising a cover layer substantially impermeable to oxygen, binds oxygen and is soluble in water at 20°C.
CN1267000A (zh) * 1999-03-11 2000-09-20 国际商业机器公司 环状烯烃聚合物和添加剂的光刻胶组合物
CN1322967A (zh) * 2000-05-05 2001-11-21 国际商业机器公司 包括含有内酯部分的环烯聚合物的光致抗蚀剂组合物
CN1690098A (zh) * 2004-04-27 2005-11-02 海力士半导体有限公司 顶端抗反射涂料聚合物、制法及顶端抗反射涂料组合物

Also Published As

Publication number Publication date
DE602006011049D1 (de) 2010-01-21
ATE451433T1 (de) 2009-12-15
EP1951829B1 (en) 2009-12-09
TW200732850A (en) 2007-09-01
CN101300317A (zh) 2008-11-05
JP2009516859A (ja) 2009-04-23
KR101013051B1 (ko) 2011-02-14
EP1951829A1 (en) 2008-08-06
KR20080068692A (ko) 2008-07-23
WO2007057263A1 (en) 2007-05-24
US20070117040A1 (en) 2007-05-24

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