JP2009283455A - 蒸着用基板の作製方法、および発光装置の作製方法 - Google Patents
蒸着用基板の作製方法、および発光装置の作製方法 Download PDFInfo
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- JP2009283455A JP2009283455A JP2009102825A JP2009102825A JP2009283455A JP 2009283455 A JP2009283455 A JP 2009283455A JP 2009102825 A JP2009102825 A JP 2009102825A JP 2009102825 A JP2009102825 A JP 2009102825A JP 2009283455 A JP2009283455 A JP 2009283455A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/048—Coating on selected surface areas, e.g. using masks using irradiation by energy or particles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/18—Deposition of organic active material using non-liquid printing techniques, e.g. thermal transfer printing from a donor sheet
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
- H10K71/421—Thermal treatment, e.g. annealing in the presence of a solvent vapour using coherent electromagnetic radiation, e.g. laser annealing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
- Electromagnetism (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Electroluminescent Light Sources (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009102825A JP2009283455A (ja) | 2008-04-24 | 2009-04-21 | 蒸着用基板の作製方法、および発光装置の作製方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008113764 | 2008-04-24 | ||
| JP2009102825A JP2009283455A (ja) | 2008-04-24 | 2009-04-21 | 蒸着用基板の作製方法、および発光装置の作製方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2009283455A true JP2009283455A (ja) | 2009-12-03 |
| JP2009283455A5 JP2009283455A5 (https=) | 2012-06-07 |
Family
ID=41215287
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009102825A Withdrawn JP2009283455A (ja) | 2008-04-24 | 2009-04-21 | 蒸着用基板の作製方法、および発光装置の作製方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US8409672B2 (https=) |
| JP (1) | JP2009283455A (https=) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20140129679A (ko) * | 2013-04-30 | 2014-11-07 | 삼성디스플레이 주식회사 | 열 전사 방법 및 이를 이용한 유기 발광 표시 장치의 제조 방법 |
| KR101849580B1 (ko) * | 2011-10-11 | 2018-04-18 | 엘지디스플레이 주식회사 | 유기 발광 표시장치의 제조방법 |
| KR101849579B1 (ko) * | 2011-10-11 | 2018-04-18 | 엘지디스플레이 주식회사 | 유기 발광 표시 장치의 제조 방법 |
| KR20200028839A (ko) * | 2018-09-07 | 2020-03-17 | 도쿄엘렉트론가부시키가이샤 | 기판 처리 장치 및 기판 처리 방법 |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8486736B2 (en) * | 2008-10-20 | 2013-07-16 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing light-emitting device |
| JP5292263B2 (ja) * | 2008-12-05 | 2013-09-18 | 株式会社半導体エネルギー研究所 | 成膜方法及び発光素子の作製方法 |
| KR20150012530A (ko) * | 2013-07-25 | 2015-02-04 | 삼성디스플레이 주식회사 | 전사용 도너 기판 및 유기 발광 표시 장치의 제조 방법 |
| KR20150056112A (ko) * | 2013-11-14 | 2015-05-26 | 삼성디스플레이 주식회사 | 막 형성용 마스크, 이를 이용한 막 형성 방법 및 유기 발광 표시 장치의 제조 방법 |
| KR20150109013A (ko) * | 2014-03-18 | 2015-10-01 | 삼성디스플레이 주식회사 | 유기막 패턴 형성용 마스크, 이를 이용한 유기막 패턴 형성 방법 및 유기 발광 표시 장치의 제조 방법 |
| EP3387882B1 (en) | 2015-12-07 | 2021-05-12 | Glo Ab | Laser lift-off on isolated iii-nitride light islands for inter-substrate led transfer |
| CN109411603A (zh) * | 2018-10-17 | 2019-03-01 | 武汉华星光电技术有限公司 | 显示面板、发光材料蒸镀方法以及装置 |
| KR102704013B1 (ko) * | 2019-04-11 | 2024-09-10 | 삼성디스플레이 주식회사 | 표시 모듈, 표시 모듈 제조 방법, 및 레이저 가공 방법 |
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| JPH0615472A (ja) * | 1992-07-06 | 1994-01-25 | Fujitsu Ltd | レーザアブレーションによるビア穴形成方法 |
| JPH0976087A (ja) * | 1995-09-14 | 1997-03-25 | Fujitsu Ltd | レーザ加工方法 |
| JPH10137953A (ja) * | 1996-11-08 | 1998-05-26 | Sharp Corp | 透明薄膜除去装置、透明薄膜除去方法および薄膜エレクトロルミネッセント素子 |
| JPH11274733A (ja) * | 1998-03-18 | 1999-10-08 | Toshiba Corp | インターコネクタおよび液晶表示装置 |
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| JP2005158750A (ja) * | 2003-11-25 | 2005-06-16 | Samsung Sdi Co Ltd | フルカラー有機電界発光素子用ドナー基板、ドナー基板の製造方法及びこのドナー基板を用いたフルカラー有機電界発光素子 |
| US6919162B1 (en) * | 1998-08-28 | 2005-07-19 | Agilent Technologies, Inc. | Method for producing high-structure area texturing of a substrate, substrates prepared thereby and masks for use therein |
| JP2007515756A (ja) * | 2003-12-12 | 2007-06-14 | ゼネラル・エレクトリック・カンパニイ | パターン化被覆フィルムの形成方法及び装置 |
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| JP2008052951A (ja) * | 2006-08-23 | 2008-03-06 | Sony Corp | 表示装置の製造方法および表示装置 |
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-
2009
- 2009-04-16 US US12/425,081 patent/US8409672B2/en not_active Expired - Fee Related
- 2009-04-21 JP JP2009102825A patent/JP2009283455A/ja not_active Withdrawn
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01124856A (ja) * | 1988-09-30 | 1989-05-17 | Hitachi Ltd | マスクの欠陥修正方法 |
| JPH0615472A (ja) * | 1992-07-06 | 1994-01-25 | Fujitsu Ltd | レーザアブレーションによるビア穴形成方法 |
| JPH0976087A (ja) * | 1995-09-14 | 1997-03-25 | Fujitsu Ltd | レーザ加工方法 |
| JPH10137953A (ja) * | 1996-11-08 | 1998-05-26 | Sharp Corp | 透明薄膜除去装置、透明薄膜除去方法および薄膜エレクトロルミネッセント素子 |
| JPH11274733A (ja) * | 1998-03-18 | 1999-10-08 | Toshiba Corp | インターコネクタおよび液晶表示装置 |
| US6919162B1 (en) * | 1998-08-28 | 2005-07-19 | Agilent Technologies, Inc. | Method for producing high-structure area texturing of a substrate, substrates prepared thereby and masks for use therein |
| JP2004119380A (ja) * | 2002-09-23 | 2004-04-15 | Eastman Kodak Co | 粘性流れによる有機発光ダイオードデバイスの層の付着方法 |
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| US20090269509A1 (en) | 2009-10-29 |
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