JP2009278132A - 配線構造の製造方法 - Google Patents
配線構造の製造方法 Download PDFInfo
- Publication number
- JP2009278132A JP2009278132A JP2009190454A JP2009190454A JP2009278132A JP 2009278132 A JP2009278132 A JP 2009278132A JP 2009190454 A JP2009190454 A JP 2009190454A JP 2009190454 A JP2009190454 A JP 2009190454A JP 2009278132 A JP2009278132 A JP 2009278132A
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- Prior art keywords
- conductor
- cobalt
- dielectric layer
- recessed
- copper
- Prior art date
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- Granted
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 8
- 239000004020 conductor Substances 0.000 claims abstract description 45
- 229910052802 copper Inorganic materials 0.000 claims abstract description 36
- 239000010949 copper Substances 0.000 claims abstract description 36
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 35
- 238000000034 method Methods 0.000 claims abstract description 28
- 229910017052 cobalt Inorganic materials 0.000 claims abstract description 14
- 239000010941 cobalt Substances 0.000 claims abstract description 14
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims abstract description 14
- JPNWDVUTVSTKMV-UHFFFAOYSA-N cobalt tungsten Chemical compound [Co].[W] JPNWDVUTVSTKMV-UHFFFAOYSA-N 0.000 claims abstract description 12
- 238000004140 cleaning Methods 0.000 claims abstract description 8
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 claims abstract description 7
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 claims abstract description 7
- QWPPOHNGKGFGJK-UHFFFAOYSA-N hypochlorous acid Chemical compound ClO QWPPOHNGKGFGJK-UHFFFAOYSA-N 0.000 claims abstract description 7
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 6
- 229910000881 Cu alloy Inorganic materials 0.000 claims abstract description 4
- 238000005530 etching Methods 0.000 claims abstract description 4
- 230000004888 barrier function Effects 0.000 claims description 11
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 4
- 230000002378 acidificating effect Effects 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 2
- 229910021529 ammonia Inorganic materials 0.000 claims description 2
- 150000003863 ammonium salts Chemical class 0.000 claims description 2
- 239000007800 oxidant agent Substances 0.000 claims description 2
- 239000002002 slurry Substances 0.000 claims description 2
- 238000007517 polishing process Methods 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 abstract description 11
- 239000002184 metal Substances 0.000 abstract description 11
- 239000002253 acid Substances 0.000 abstract description 4
- 238000005498 polishing Methods 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 2
- 239000012964 benzotriazole Substances 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- -1 for example Chemical compound 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
- H01L21/76849—Barrier, adhesion or liner layers formed in openings in a dielectric the layer being positioned on top of the main fill metal
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76883—Post-treatment or after-treatment of the conductive material
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
【解決手段】本発明の製造方法は、誘電体層30にダマシン構造を形成する工程と、導体50’として銅または銅合金によりダマシン構造を充填する工程と、導体50’の上表面を誘電体層30の上表面よりも低くするために、硝酸,次亜塩酸,或いはクロム酸からなる酸性の環境内で行われる洗浄処理により、導体50’の表面を陥凹させる工程と、導体50’の表面を陥凹させた後に、金属コバルト,コバルトタングステン,コバルトタングステンリン化物またはコバルトタングステンホウ化物からなるコバルト含有キャップ54を、凹んだ導体50’上に選択的成長によって形成する工程と、コバルト含有キャップ54と誘電体層30を覆ってエッチング停止層56を形成する工程と、からなる。
【選択図】図1H
Description
42 導電バリア層
44 シード層
50’ 導体
52 凹部
54 コバルト含有キャップ
56 エッチング停止層
60 ダマシン構造
Claims (4)
- 誘電体層にダマシン構造を形成する工程と、
導体として銅または銅合金により前記ダマシン構造を充填する工程と、
前記導体の上表面を前記誘電体層の上表面よりも低くするために、硝酸,次亜塩酸,或いはクロム酸からなる酸性の環境内で行われる洗浄処理により、前記導体の表面を陥凹させる工程と、
前記導体の表面を陥凹させた後に、金属コバルト(Co),コバルトタングステン(CoW),コバルトタングステンリン化物(CoWP),またはコバルトタングステンホウ化物(CoWB)からなるコバルト含有キャップを、凹んだ導体上に選択的成長によって形成する工程と、
前記コバルト含有キャップと前記誘電体層を覆ってエッチング停止層を形成する工程と、からなることを特徴とする配線構造の製造方法。 - 過酸化水素(H2O2)の酸化剤,硝酸,次亜塩素酸,クロム酸,アンモニア,アンモニウム塩,および研磨剤スラリーによるCMP処理により、前記導体が陥凹されることを特徴とする請求項1記載の配線構造の製造方法。
- 前記銅または銅合金の充填前に、前記ダマシン構造の内側を覆って導電バリア層および/またはシード層を形成する工程と、
前記導体の上表面を、前記誘電体層上の前記導電バリア層および/または前記シード層の上表面とほぼ同一平面に形成するために、化学的機械研磨処理を実施する工程と、
前記導体の表面を陥凹させる前に、前記誘電体層上の前記導電バリア層および/または前記シード層を除去する工程と、をさらに含むことを特徴とする請求項1記載の配線構造の製造方法。 - 前記コバルト含有キャップは、前記凹んだ導体に過剰に充填することなく、当該凹んだ導体上に形成されることを特徴とする請求項1記載の配線構造の製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/209,891 | 2005-08-23 | ||
US11/209,891 US20070048991A1 (en) | 2005-08-23 | 2005-08-23 | Copper interconnect structures and fabrication method thereof |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006216248A Division JP2007059901A (ja) | 2005-08-23 | 2006-08-08 | 配線構造およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009278132A true JP2009278132A (ja) | 2009-11-26 |
JP5528027B2 JP5528027B2 (ja) | 2014-06-25 |
Family
ID=37735055
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006216248A Pending JP2007059901A (ja) | 2005-08-23 | 2006-08-08 | 配線構造およびその製造方法 |
JP2009190454A Active JP5528027B2 (ja) | 2005-08-23 | 2009-08-19 | 配線構造の製造方法 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006216248A Pending JP2007059901A (ja) | 2005-08-23 | 2006-08-08 | 配線構造およびその製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20070048991A1 (ja) |
JP (2) | JP2007059901A (ja) |
CN (1) | CN1921102A (ja) |
FR (1) | FR2890238B1 (ja) |
TW (1) | TWI368294B (ja) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070048991A1 (en) * | 2005-08-23 | 2007-03-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Copper interconnect structures and fabrication method thereof |
US7777344B2 (en) | 2007-04-11 | 2010-08-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Transitional interface between metal and dielectric in interconnect structures |
US20090269507A1 (en) * | 2008-04-29 | 2009-10-29 | Sang-Ho Yu | Selective cobalt deposition on copper surfaces |
JP5507909B2 (ja) * | 2009-07-14 | 2014-05-28 | 東京エレクトロン株式会社 | 成膜方法 |
US8298948B2 (en) * | 2009-11-06 | 2012-10-30 | International Business Machines Corporation | Capping of copper interconnect lines in integrated circuit devices |
CN113725156A (zh) | 2011-11-04 | 2021-11-30 | 英特尔公司 | 形成自对准帽的方法和设备 |
CN114093809A (zh) * | 2011-11-04 | 2022-02-25 | 英特尔公司 | 形成自对准帽的方法和设备 |
CN103390607B (zh) * | 2012-05-09 | 2015-12-16 | 中芯国际集成电路制造(上海)有限公司 | 铜互连结构及其形成方法 |
CN102881647B (zh) * | 2012-10-12 | 2015-09-30 | 上海华力微电子有限公司 | 铜金属覆盖层的制备方法 |
CN103972156B (zh) * | 2013-02-06 | 2016-09-14 | 中芯国际集成电路制造(上海)有限公司 | 半导体互连结构及其制作方法 |
US8951909B2 (en) * | 2013-03-13 | 2015-02-10 | Taiwan Semiconductor Manufacturing Company Limited | Integrated circuit structure and formation |
US9583359B2 (en) | 2014-04-04 | 2017-02-28 | Fujifilm Planar Solutions, LLC | Polishing compositions and methods for selectively polishing silicon nitride over silicon oxide films |
US20150380296A1 (en) * | 2014-06-25 | 2015-12-31 | Lam Research Corporation | Cleaning of carbon-based contaminants in metal interconnects for interconnect capping applications |
DE102018102685A1 (de) * | 2017-11-30 | 2019-06-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Kontaktbildungsverfahren und zugehörige Struktur |
Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0521459A (ja) * | 1990-11-26 | 1993-01-29 | Seiko Epson Corp | 半導体装置の製造方法 |
JPH08264538A (ja) * | 1995-03-28 | 1996-10-11 | Sumitomo Metal Ind Ltd | 配線の形成方法 |
JP2000150522A (ja) * | 1998-01-12 | 2000-05-30 | Matsushita Electronics Industry Corp | 半導体装置の製造方法 |
JP2000243777A (ja) * | 1999-02-23 | 2000-09-08 | Lucent Technol Inc | Icチップを基板に接合する方法 |
JP2001351940A (ja) * | 2000-04-10 | 2001-12-21 | Agere Systems Guardian Corp | Icチップにおいて銅相互接続配線 |
JP2002110676A (ja) * | 2000-09-26 | 2002-04-12 | Toshiba Corp | 多層配線を有する半導体装置 |
JP2003124189A (ja) * | 2001-10-10 | 2003-04-25 | Fujitsu Ltd | 半導体装置の製造方法 |
JP2004015028A (ja) * | 2002-06-11 | 2004-01-15 | Ebara Corp | 基板処理方法及び半導体装置 |
JP2005039180A (ja) * | 2003-07-18 | 2005-02-10 | Hynix Semiconductor Inc | 半導体素子の金属配線の形成方法 |
JP2005217371A (ja) * | 2004-02-02 | 2005-08-11 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
JP2007059901A (ja) * | 2005-08-23 | 2007-03-08 | Taiwan Semiconductor Manufacturing Co Ltd | 配線構造およびその製造方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
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US6046108A (en) * | 1999-06-25 | 2000-04-04 | Taiwan Semiconductor Manufacturing Company | Method for selective growth of Cu3 Ge or Cu5 Si for passivation of damascene copper structures and device manufactured thereby |
US6734559B1 (en) * | 1999-09-17 | 2004-05-11 | Advanced Micro Devices, Inc. | Self-aligned semiconductor interconnect barrier and manufacturing method therefor |
US6977224B2 (en) * | 2000-12-28 | 2005-12-20 | Intel Corporation | Method of electroless introduction of interconnect structures |
CN1329972C (zh) * | 2001-08-13 | 2007-08-01 | 株式会社荏原制作所 | 半导体器件及其制造方法 |
JP2004095865A (ja) * | 2002-08-30 | 2004-03-25 | Nec Electronics Corp | 半導体装置およびその製造方法 |
JP2005044910A (ja) * | 2003-07-24 | 2005-02-17 | Ebara Corp | 配線形成方法及び配線形成装置 |
KR20070071020A (ko) * | 2005-12-29 | 2007-07-04 | 동부일렉트로닉스 주식회사 | 캐핑 금속층에 의해 보호된 구리 금속 배선 및 그 제조방법 |
-
2005
- 2005-08-23 US US11/209,891 patent/US20070048991A1/en not_active Abandoned
-
2006
- 2006-07-14 TW TW095125785A patent/TWI368294B/zh active
- 2006-08-08 JP JP2006216248A patent/JP2007059901A/ja active Pending
- 2006-08-10 FR FR0607252A patent/FR2890238B1/fr active Active
- 2006-08-22 CN CNA2006101214272A patent/CN1921102A/zh active Pending
-
2009
- 2009-08-19 JP JP2009190454A patent/JP5528027B2/ja active Active
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0521459A (ja) * | 1990-11-26 | 1993-01-29 | Seiko Epson Corp | 半導体装置の製造方法 |
JPH08264538A (ja) * | 1995-03-28 | 1996-10-11 | Sumitomo Metal Ind Ltd | 配線の形成方法 |
JP2000150522A (ja) * | 1998-01-12 | 2000-05-30 | Matsushita Electronics Industry Corp | 半導体装置の製造方法 |
JP2000243777A (ja) * | 1999-02-23 | 2000-09-08 | Lucent Technol Inc | Icチップを基板に接合する方法 |
JP2001351940A (ja) * | 2000-04-10 | 2001-12-21 | Agere Systems Guardian Corp | Icチップにおいて銅相互接続配線 |
JP2002110676A (ja) * | 2000-09-26 | 2002-04-12 | Toshiba Corp | 多層配線を有する半導体装置 |
JP2003124189A (ja) * | 2001-10-10 | 2003-04-25 | Fujitsu Ltd | 半導体装置の製造方法 |
JP2004015028A (ja) * | 2002-06-11 | 2004-01-15 | Ebara Corp | 基板処理方法及び半導体装置 |
JP2005039180A (ja) * | 2003-07-18 | 2005-02-10 | Hynix Semiconductor Inc | 半導体素子の金属配線の形成方法 |
JP2005217371A (ja) * | 2004-02-02 | 2005-08-11 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
JP2007059901A (ja) * | 2005-08-23 | 2007-03-08 | Taiwan Semiconductor Manufacturing Co Ltd | 配線構造およびその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
TW200723448A (en) | 2007-06-16 |
JP2007059901A (ja) | 2007-03-08 |
TWI368294B (en) | 2012-07-11 |
JP5528027B2 (ja) | 2014-06-25 |
FR2890238A1 (fr) | 2007-03-02 |
FR2890238B1 (fr) | 2017-02-24 |
CN1921102A (zh) | 2007-02-28 |
US20070048991A1 (en) | 2007-03-01 |
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