JP2009218556A - リソグラフィパターンの形成方法 - Google Patents
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- 238000000034 method Methods 0.000 title claims abstract description 149
- 238000001459 lithography Methods 0.000 title claims abstract description 93
- 238000000059 patterning Methods 0.000 title claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 67
- 229920002120 photoresistant polymer Polymers 0.000 claims description 116
- 239000000463 material Substances 0.000 claims description 89
- 230000008569 process Effects 0.000 claims description 56
- 238000005530 etching Methods 0.000 claims description 43
- 239000004065 semiconductor Substances 0.000 claims description 34
- 239000003989 dielectric material Substances 0.000 claims description 16
- 239000002904 solvent Substances 0.000 claims description 15
- 238000004528 spin coating Methods 0.000 claims description 11
- 238000007796 conventional method Methods 0.000 abstract 1
- 230000007547 defect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 144
- 230000015572 biosynthetic process Effects 0.000 description 16
- 238000004519 manufacturing process Methods 0.000 description 7
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000002253 acid Substances 0.000 description 4
- 239000006117 anti-reflective coating Substances 0.000 description 4
- 238000001723 curing Methods 0.000 description 4
- 230000018109 developmental process Effects 0.000 description 4
- 230000007261 regionalization Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910000673 Indium arsenide Inorganic materials 0.000 description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 229910003481 amorphous carbon Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 2
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- LXEXBJXDGVGRAR-UHFFFAOYSA-N trichloro(trichlorosilyl)silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl LXEXBJXDGVGRAR-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910003811 SiGeC Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000004964 aerogel Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- ISQINHMJILFLAQ-UHFFFAOYSA-N argon hydrofluoride Chemical compound F.[Ar] ISQINHMJILFLAQ-UHFFFAOYSA-N 0.000 description 1
- 239000003849 aromatic solvent Substances 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- URQUNWYOBNUYJQ-UHFFFAOYSA-N diazonaphthoquinone Chemical compound C1=CC=C2C(=O)C(=[N]=[N])C=CC2=C1 URQUNWYOBNUYJQ-UHFFFAOYSA-N 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007687 exposure technique Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- ZIUHHBKFKCYYJD-UHFFFAOYSA-N n,n'-methylenebisacrylamide Chemical compound C=CC(=O)NCNC(=O)C=C ZIUHHBKFKCYYJD-UHFFFAOYSA-N 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000003504 photosensitizing agent Substances 0.000 description 1
- 229920000052 poly(p-xylylene) Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000009993 protective function Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229920003051 synthetic elastomer Polymers 0.000 description 1
- 239000005061 synthetic rubber Substances 0.000 description 1
- 238000001029 thermal curing Methods 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
Abstract
【解決手段】リソグラフィパターンの形成方法は、複数の開口を含む第1のレジストパターンを基板110上に形成する工程と、第1のレジストパターンの複数の開口の間に、少なくとも1つの開口を含む第2のレジストパターンを形成する工程と、第1のレジストパターンを除去し、第1のレジストパターンで覆われている基板110の一部を露出させる工程と、を含む。
【選択図】図8
Description
図1〜図8は、本発明の第1実施形態によるリソグラフィパターンの形成方法の各工程における半導体デバイス100を示す断面図である。図9は、本発明の第1実施形態によるリソグラフィパターンの形成方法200を示す流れ図である。以下、図1〜図9を基に、リソグラフィパターンの形成方法200および半導体デバイス100を同時に説明する。
以下、図9〜図13を基に、本発明の第2実施形態によるリソグラフィパターンの形成方法200を説明する。第2実施形態では、基板110上にアンダー材料層を形成する工程202から開始し、第1実施形態と同様に、工程204においてポジ型レジストパターン118をアンダー材料層上に形成する。
110 基板
112 材料層
114 マスク層
116 材料層
118 ポジ型レジストパターン
120 ネガ型レジストパターン
121 開口
122 アンダー材料層
130 半導体デバイス
Claims (15)
- 複数の開口を含む第1のレジストパターンを基板上に形成する工程と、
前記第1のレジストパターンの前記複数の開口の間に、少なくとも1つの開口を含む第2のレジストパターンを形成する工程と、
前記第1のレジストパターンを除去し、前記第1のレジストパターンで覆われている前記基板の一部を露出させる工程と、を含むことを特徴とするリソグラフィパターンの形成方法。 - 前記第1のレジストパターンはポジ型レジスト材料を含み、
前記第2のレジストパターンはネガ型レジスト材料を含むことを特徴とする請求項1に記載のリソグラフィパターンの形成方法。 - 前記第1のレジストパターンは、前記第2のレジストパターンよりも高いエッチングレートを有することを特徴とする請求項1に記載のリソグラフィパターンの形成方法。
- 前記第1のレジストパターンを除去する工程は、
エッチング工程を行い、前記第2のレジストパターンに対し、前記第1のレジストパターンを選択的に除去する工程を含むことを特徴とする請求項1に記載のリソグラフィパターンの形成方法。 - 前記第1のレジストパターンを除去する工程は、
前記第1のレジストパターンは溶解可能であるが、前記第2のレジストパターンは溶解不能である溶剤を施し、前記第1のレジストパターンを溶解させる工程を含むことを特徴とする請求項1に記載のリソグラフィパターンの形成方法。 - 前記第1のレジストパターンを除去する工程を行った後に、
前記第2のレジストパターンに対応した前記基板の前記少なくとも1つの開口の部分にエッチングを行い、前記基板上に複数のコンタクトホールを形成する工程をさらに行うことを特徴とする請求項1に記載のリソグラフィパターンの形成方法。 - 前記第1のレジストパターンを除去する工程を行った後に、
前記第2のレジストパターンの前記少なくとも1つの開口の部分に対し、前記基板をエッチングし、前記基板上に複数のトレンチを形成する工程をさらに行うことを特徴とする請求項1に記載のリソグラフィパターンの形成方法。 - 複数のポジ型レジスト材料を含むポジ型レジストパターンを基板上に形成する工程と、
ネガ型レジスト層により覆われていない頂面を含んだ前記複数のポジ型レジスト材料の間に形成した前記ネガ型レジスト層を前記基板上に形成する工程と、
前記ネガ型レジスト層に対して露光を行い、前記基板上に複数の露光されていないネガ型レジスト材料を画定させる工程と、
溶剤を施し、前記ポジ型レジストパターンを除去する工程と、を含むことを特徴とするリソグラフィパターンの形成方法。 - 前記溶剤を施し、前記ポジ型レジストパターンを除去する工程は、
現像液を施し、前記ポジ型レジストパターンおよび前記複数の露光されていないネガ型レジスト材料を除去する工程を含むことを特徴とする請求項8に記載のリソグラフィパターンの形成方法。 - 前記ネガ型レジスト層は、回転速度を調整し、第1のポジ型レジストパターンよりも薄い前記ネガ型レジスト層を形成することが可能なスピンコーティング方法を用いて形成されることを特徴とする請求項8に記載のリソグラフィパターンの形成方法。
- 前記ネガ型レジスト層は、前記ネガ型レジスト層の表面張力を調整し、第1のポジ型レジストパターンよりも薄い前記ネガ型レジスト層を形成するスピンコーティング方法を用いて形成されることを特徴とする請求項8に記載のリソグラフィパターンの形成方法。
- ポジ型レジストパターンを基板上に形成する工程と、
前記基板上および前記ポジ型レジストパターン上にネガ型レジスト層を形成する工程と、
前記ネガ型レジスト層に対してパターニングを行い、前記基板上にネガ型レジストパターンを形成する工程と、
エッチング工程により前記ポジ型レジストパターンを選択的に除去し、前記ネガ型レジストパターンにより画定される複数の開口を形成する工程と、を含むことを特徴とするリソグラフィパターンの形成方法。 - 前記ネガ型レジスト層は、前記ポジ型レジストパターンよりも高い頂面を有することを特徴とする請求項12に記載のリソグラフィパターンの形成方法。
- 前記基板は、半導体材料層と、前記半導体材料層上に形成された誘電体材料層とを含むことを特徴とする請求項12に記載のリソグラフィパターンの形成方法。
- 前記ネガ型レジストパターンにより画定された前記複数の開口に対応し、前記基板をエッチングする工程をさらに含むことを特徴とする請求項12に記載のリソグラフィパターンの形成方法。
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US12/047,086 | 2008-03-12 | ||
US12/047,086 US8048616B2 (en) | 2008-03-12 | 2008-03-12 | Double patterning strategy for contact hole and trench in photolithography |
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JP2009218556A true JP2009218556A (ja) | 2009-09-24 |
JP4890524B2 JP4890524B2 (ja) | 2012-03-07 |
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US (2) | US8048616B2 (ja) |
JP (1) | JP4890524B2 (ja) |
KR (1) | KR101079014B1 (ja) |
CN (1) | CN101533218B (ja) |
TW (1) | TWI380350B (ja) |
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JP2014130364A (ja) * | 2014-02-12 | 2014-07-10 | Hoya Corp | 光学素子の製造方法、光学素子 |
JP2015146031A (ja) * | 2015-03-23 | 2015-08-13 | Hoya株式会社 | 光学素子の製造方法、光学素子 |
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JP2012174976A (ja) * | 2011-02-23 | 2012-09-10 | Tokyo Electron Ltd | パターンの形成方法 |
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JP2014130364A (ja) * | 2014-02-12 | 2014-07-10 | Hoya Corp | 光学素子の製造方法、光学素子 |
JP2015146031A (ja) * | 2015-03-23 | 2015-08-13 | Hoya株式会社 | 光学素子の製造方法、光学素子 |
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CN101533218A (zh) | 2009-09-16 |
KR20090097765A (ko) | 2009-09-16 |
TWI380350B (en) | 2012-12-21 |
US20120034778A1 (en) | 2012-02-09 |
CN101533218B (zh) | 2012-05-30 |
TW200939300A (en) | 2009-09-16 |
US8450052B2 (en) | 2013-05-28 |
JP4890524B2 (ja) | 2012-03-07 |
KR101079014B1 (ko) | 2011-11-01 |
US8048616B2 (en) | 2011-11-01 |
US20090233238A1 (en) | 2009-09-17 |
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