JP2009200270A - 半導体装置および半導体装置の製造方法 - Google Patents
半導体装置および半導体装置の製造方法 Download PDFInfo
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Abstract
【解決手段】基板1に半導体チップ2をフリップチップ実装して半導体装置を製造する際に、半導体チップ2の多重の環状に形成されたパッド4の最内周パッド以外のパッド4間に突出部9を設け、基板1上の最内周パッドの内側に対応する部分に固定用樹脂体3を載置し、加圧,加温することにより基板1と半導体チップ2との間全面に固定用樹脂体3を広げ、基板1と半導体チップ2とを固定用樹脂体3により固定することにより、最内周パッドの外側にボイド等が形成されることを抑制し、半導体チップ2と基板1との電気的接続状態を安定化することができる。
【選択図】図1
Description
そして、これら内、外多重状態で、断続的環状配列の接続端子と、内、外多重状態で、断続的環状配列のパッド間を、内、外多重状態で、断続的環状配列のバンプを介して接続した構成となっていた。
すなわち、上記従来例の構造においては、バンプ接続後に、基板と半導体チップ間に、固定用樹脂体を、半導体チップの外側から内側へと毛細管作用により流入させ、これにより半導体チップ下面と基板の上面間を、この固定用樹脂体により固定するようになっているが、固定用樹脂体の流入がスムーズに進行しない部分では、所謂空気の巻き込みによるボイドが形成されてしまう。
しかしながら、製造方法として、突起を形成するための工程を設ける必要が有り、コストアップになるという問題点があった。また、半導体チップと樹脂体の界面では最も密着強度が弱くなるため、界面に発生するボイドを抑制することが難しく、このボイドにより電気的接続状態が不安定になるという問題点があった。
請求項6記載の半導体装置は、請求項1〜請求項5のいずれかに記載の半導体装置において、前記突出部が形成される周辺の前記半導体チップ表面に凹凸を備えることを特徴とする。
請求項8記載の半導体装置は、請求項6または請求項7のいずれかに記載の半導体装置において、前記凹凸を前記半導体チップ表面の下層部分にダミーメタルを設けることにより形成することを特徴とする。
図1は本発明の半導体装置の断面図であり、図3におけるA−A部分に相当する断面図である。図2は本発明の半導体装置における固定用樹脂体挿入工程を説明する断面図、図3は本発明の半導体装置における半導体チップの裏面図である。図3においては表現保護膜7を省略している。また、図4は本発明の半導体装置における半導体チップの要部拡大図であり、パッドと突出部の構成を示す図である。図5は複数列の突出部を示す要部拡大図、図6は台形形状の突出部を示す断面図、図7は複数列の台形形状に形成された突出部を示す断面図、図8は底部に表面保護膜の凹凸が形成された突出部を示す断面図、図9は先端部に凹部が設けられた突出部を示す断面図である。
また、半導体チップ2の下面で、パッド4が形成される領域より内側の部分とパッド4の外周部分とは表面保護膜7により覆われており、さらに図1、図3に示すようにパッド4の内方部分の表面保護膜7部分は保護膜8により覆われている。
そして、この保護膜8形成時に、図3、図4に示す突出部9も同時に半導体チップ2の下面側に形成する。
また、図5は本発明の他の実施形態を示し、この実施形態では、突出部として複数列に形成される突出部9Aを設けたものである。1または複数のスリット10で突出部9Aが分割されることにより、ポリイミド樹脂の流れがよりスムーズになるとともに、硬化後はこのスリット10への樹脂の食いつき状態が、より固定強度を高めることになる。
2 半導体チップ
3 固定用樹脂体
4 パッド
5 接続端子
6 バンプ
7 表面保護膜
8 保護膜
9 突出部
9A 突出部
9B 突出部
9C 突出部
9D 突出部
9E 突出部
10 スリット
11 スリット
12 スリット
13 ダミーメタル
14 凹部
Claims (10)
- 基板上に半導体チップをフリップチップ実装した構造体であって、
前記半導体チップの実装面に配列されたパッドと、
内周より外周に環状配列される前記パッド間に前記パッドより前記基板方向に突出する突出部と、
前記半導体チップの各パッドとバンプを介して接続されるように前記基板上に形成される複数の接続端子と、
前記基板と前記半導体チップとを固定する絶縁体と
を有し、前記突出部の前記半導体チップ中心方向の端部が前記パッド間の領域より前記半導体チップ中心方向に形成され、前記突出部と前記基板との間に間隔があることを特徴とする半導体装置。 - 前記パッドが2重環状で千鳥配置させており、前記突出部が外周のパッド間に形成されることを特徴とする請求項1記載の半導体装置。
- 前記突出部が、隣接する前記パッドの隣接面に平行な方向の1または複数のスリットにより分割されることを特徴とする請求項1または請求項2のいずれかに記載の半導体装置。
- 前記突出部が、前記基板に近づく程細くなるように断面形状が台形であることを特徴とする請求項1〜請求項3のいずれかに記載の半導体装置。
- 前記突出部の先端部分に凹部を備えることを特徴とする請求項1〜請求項4のいずれかに記載の半導体装置。
- 前記突出部が形成される周辺の前記半導体チップ表面に凹凸を備えることを特徴とする請求項1〜請求項5のいずれかに記載の半導体装置。
- 前記凹凸を備える半導体チップ表面が表面保護膜であることを特徴とする請求項6記載の半導体装置。
- 前記凹凸を前記半導体チップ表面の下層部分にダミーメタルを設けることにより形成することを特徴とする請求項6または請求項7のいずれかに記載の半導体装置。
- 請求項1〜請求項8のいずれかに記載の半導体装置の製造方法であって、樹脂の形成に際し、
前記基板の前記半導体チップ搭載領域の中央部に前記固定用樹脂体を載置する工程と、
前記各パッドと前記接続端子がバンプを介して1対1で接続されるように前記半導体チップを前記基板に加熱,加圧接続させる工程と
を有し、前記固定用樹脂体が前記半導体チップ下部の中央部から周辺部に流動することを特徴とする半導体装置の製造方法。 - 前記半導体チップが、前記パッドが形成される領域の内側の表面に保護膜を備え、前記突出部が前記保護膜と同時に形成されることを特徴とする請求項9記載の半導体装置の製造方法。
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JP2008040749A JP4693852B2 (ja) | 2008-02-22 | 2008-02-22 | 半導体装置および半導体装置の製造方法 |
US12/372,760 US7977790B2 (en) | 2008-02-22 | 2009-02-18 | Semiconductor device and method of manufacturing the same |
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WO2015146328A1 (ja) * | 2014-03-26 | 2015-10-01 | ソニー株式会社 | 半導体デバイス、表示パネル、表示装置、電子装置、および、半導体デバイスの製造方法 |
JP2015213194A (ja) * | 2009-12-23 | 2015-11-26 | コミサリア ア レネルジー アトミック エ オ ゼネルジー アルテルナティブCommissariat Al’Energie Atomique Et Aux Energiesalternatives | 少なくとも1つのチップとワイヤ要素をアセンブルする方法、変形する接続要素を有する電子チップ、複数のチップを製造する方法、及び、少なくとも1つのチップとワイヤ要素のアセンブリ |
JP2022537295A (ja) * | 2020-03-13 | 2022-08-25 | チップモア テクノロジー コーポレーション リミテッド | ボール植え付け構造および製造プロセス |
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DE102005009358B4 (de) * | 2005-03-01 | 2021-02-04 | Snaptrack, Inc. | Lötfähiger Kontakt und ein Verfahren zur Herstellung |
US8476768B2 (en) * | 2011-06-28 | 2013-07-02 | Freescale Semiconductor, Inc. | System on a chip with interleaved sets of pads |
DE102012001346A1 (de) * | 2012-01-24 | 2013-07-25 | Giesecke & Devrient Gmbh | Verfahren zum Herstellen eines Datenträgers |
CN110211935A (zh) * | 2019-05-08 | 2019-09-06 | 华为技术有限公司 | 一种防止分层窜锡的封装及制造方法 |
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US20090212406A1 (en) | 2009-08-27 |
US7977790B2 (en) | 2011-07-12 |
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