JP2009177046A - プラズマ処理方法及びプラズマ処理装置 - Google Patents
プラズマ処理方法及びプラズマ処理装置 Download PDFInfo
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- 238000003672 processing method Methods 0.000 title claims abstract description 28
- 238000012545 processing Methods 0.000 title claims abstract description 23
- 239000007789 gas Substances 0.000 claims abstract description 52
- 239000000758 substrate Substances 0.000 claims abstract description 47
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000001257 hydrogen Substances 0.000 claims abstract description 7
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 7
- 239000010703 silicon Substances 0.000 claims abstract description 7
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 17
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 3
- 239000002994 raw material Substances 0.000 abstract description 4
- 230000008878 coupling Effects 0.000 abstract description 3
- 238000010168 coupling process Methods 0.000 abstract description 3
- 238000005859 coupling reaction Methods 0.000 abstract description 3
- 230000006835 compression Effects 0.000 abstract description 2
- 238000007906 compression Methods 0.000 abstract description 2
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 abstract 1
- 239000000243 solution Substances 0.000 abstract 1
- 238000002474 experimental method Methods 0.000 description 30
- 230000015572 biosynthetic process Effects 0.000 description 27
- 238000000034 method Methods 0.000 description 10
- 238000000151 deposition Methods 0.000 description 7
- 230000008021 deposition Effects 0.000 description 7
- 230000007423 decrease Effects 0.000 description 6
- 239000012528 membrane Substances 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000005259 measurement Methods 0.000 description 3
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000001000 micrograph Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32697—Electrostatic control
- H01J37/32706—Polarising the substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/318—Inorganic layers composed of nitrides
- H01L21/3185—Inorganic layers composed of nitrides of siliconnitrides
Abstract
【解決手段】シリコン及び水素を含有する原料ガスと窒素を含有するガスとのプラズマにより、プラズマ処理対象の基板21に対して窒化シリコン膜を成長させるプラズマ処理方法において、前記基板21にイオン入射させるバイアスパワーを閾値以上にすることでSi−H結合量を増加させて圧縮応力を低減させた。
【選択図】図1
Description
真空容器の内部に供給するシリコン及び水素を含有する原料ガスと窒素を含有するガスのガス供給量を制御するガス供給量制御手段と、
前記真空容器の内部の圧力を制御する圧力制御手段と、
前記真空容器の内部の前記原料ガスと前記窒素ガスにRFパワーを印加してプラズマを発生させるプラズマ発生手段と、
前記真空容器の内部で、プラズマ処理対象となる基板を保持する基板保持手段と、
前記基板のプラズマ処理時の温度を制御する温度制御手段と、
前記基板にバイアスパワーを印加するバイアスパワー印加手段と、
前記基板にイオン入射させるバイアスパワーを閾値以上にすることでSi−H結合量を増加させて圧縮応力を低減させるパラメータ制御手段と
を備えた
ことを特徴とする。
図1は本発明の一実施形態に係るプラズマ処理装置の構成図である。図1に示すように、プラズマ処理装置1は、高い真空度を維持できる真空容器10を備えている。この真空容器10は、筒状容器11と天井板12からなり、筒状容器11の上部に天井板12を取り付けることで外気から密閉された空間を形成している。
第1の実験として、SiN膜成膜時において、バイアスパワーを変化させたときの、SiN膜の圧縮応力、Si−H結合量及びN−H結合量を測定する実験を行った。ここで、成膜処理対象の基板21(図1参照)は、200mm径のウェハとする。SiN膜成膜時のプロセス条件として、RFパワー(13.56MHz)は2kW、SiH4とN2とArの流量はそれぞれ50sccm、圧力は25mTorr、成膜温度は250℃、成膜するSiN膜の膜厚は350nmと設定した。
10 真空容器
11 筒状容器
12 天井板
13 真空装置
14 プラズマ
15 RFアンテナ
16 整合器
17 RF電源
18 原料ガス供給管
18a 原料ガス供給量制御バルブ
19 N2ガス供給管
19a N2ガス供給量制御バルブ
20 Arガス供給管
20a Arガス供給量制御バルブ
21 基板
22 基板支持台
23 基板保持部
24 支持軸
25 ヒータ
26 ヒータ制御装置
27 コンデンサ
28 整合器
29 バイアス電源
30 静電電源
31 ローパスフィルター(LPF)
32 パラメータ制御装置
Claims (6)
- シリコン及び水素を含有する原料ガスと窒素を含有するガスとのプラズマにより、プラズマ処理対象の基板に対して窒化シリコン膜を成長させるプラズマ処理方法において、
前記基板にイオン入射させるバイアスパワーを閾値以上にすることでSi−H結合量を増加させて圧縮応力を低減させる
ことを特徴とするプラズマ処理方法。 - 請求項1に記載のプラズマ処理方法において、
プラズマを生成するために印加するRFパワーを減少させることでSi−H結合量を増加させて圧縮応力を低減させる
ことを特徴とするプラズマ処理方法。 - 請求項1又は請求項2に記載のプラズマ処理方法において、
圧力を高くすることでSi−H結合量を増加させて圧縮応力を低減させる
ことを特徴とするプラズマ処理方法。 - 請求項1から請求項3のいずれか1項に記載のプラズマ処理方法において、
前記原料ガスと窒素を含有するガスの供給量を増加させることでSi−H結合量を増加させて圧縮応力を低減させる
ことを特徴とするプラズマ処理方法。 - 請求項1から請求項4のいずれか1項に記載のプラズマ処理方法において、
プラズマ処理温度を低下させることでSi−H結合量を増加させて圧縮応力を低減させる
ことを特徴とするプラズマ処理方法。 - 真空容器の内部に供給するシリコン及び水素を含有する原料ガスと窒素を含有するガスのガス供給量を制御するガス供給量制御手段と、
前記真空容器の内部の圧力を制御する圧力制御手段と、
前記真空容器の内部の前記原料ガスと前記窒素ガスにRFパワーを印加してプラズマを発生させるプラズマ発生手段と、
前記真空容器の内部で、プラズマ処理対象となる基板を保持する基板保持手段と、
前記基板のプラズマ処理時の温度を制御する温度制御手段と、
前記基板にバイアスパワーを印加するバイアスパワー印加手段と、
前記基板にイオン入射させるバイアスパワーを閾値以上にすることでSi−H結合量を増加させて圧縮応力を低減させるパラメータ制御手段と
を備えた
ことを特徴とするプラズマ処理装置。
Priority Applications (7)
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JP2008015894A JP5297048B2 (ja) | 2008-01-28 | 2008-01-28 | プラズマ処理方法及びプラズマ処理装置 |
US12/812,653 US20100310791A1 (en) | 2008-01-28 | 2009-01-20 | Plasma processing method and plasma processing system |
EP09705243.5A EP2242092A4 (en) | 2008-01-28 | 2009-01-20 | METHOD AND SYSTEM FOR PLASMA PROCESSING |
PCT/JP2009/050703 WO2009096259A1 (ja) | 2008-01-28 | 2009-01-20 | プラズマ処理方法及びプラズマ処理装置 |
KR1020107016842A KR101158377B1 (ko) | 2008-01-28 | 2009-01-20 | 플라즈마 처리 방법 및 플라즈마 처리 시스템 |
TW098102593A TW200947551A (en) | 2008-01-28 | 2009-01-22 | Plasma processing method and plasma processing system |
US14/059,502 US20140057459A1 (en) | 2008-01-28 | 2013-10-22 | Plasma processing method and plasma processing system |
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JP2008015894A JP5297048B2 (ja) | 2008-01-28 | 2008-01-28 | プラズマ処理方法及びプラズマ処理装置 |
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JP5297048B2 JP5297048B2 (ja) | 2013-09-25 |
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US (2) | US20100310791A1 (ja) |
EP (1) | EP2242092A4 (ja) |
JP (1) | JP5297048B2 (ja) |
KR (1) | KR101158377B1 (ja) |
TW (1) | TW200947551A (ja) |
WO (1) | WO2009096259A1 (ja) |
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JP2009235504A (ja) * | 2008-03-27 | 2009-10-15 | Fujifilm Corp | 窒化珪素膜の成膜方法、ガスバリアフィルムの製造方法、および、ガスバリアフィルム |
WO2011145489A1 (ja) | 2010-05-21 | 2011-11-24 | 三菱重工業株式会社 | 半導体素子の窒化珪素膜、窒化珪素膜の製造方法及び装置 |
WO2011148831A1 (ja) | 2010-05-28 | 2011-12-01 | 三菱重工業株式会社 | 窒化珪素膜の製造方法及び装置 |
WO2011148830A1 (ja) | 2010-05-28 | 2011-12-01 | 三菱重工業株式会社 | 半導体素子の窒化珪素膜、窒化珪素膜の製造方法及び装置 |
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TWI633569B (zh) * | 2016-07-28 | 2018-08-21 | 大陸商中微半導體設備(上海)有限公司 | 用於電漿處理器的射頻電源控制裝置及其控制方法 |
WO2021053987A1 (ja) * | 2019-09-20 | 2021-03-25 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置、およびプログラム |
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JPWO2021053987A1 (ja) * | 2019-09-20 | 2021-03-25 | ||
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JP7240517B2 (ja) | 2019-09-20 | 2023-03-15 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理方法、プログラム、および基板処理装置 |
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KR20100098575A (ko) | 2010-09-07 |
TW200947551A (en) | 2009-11-16 |
US20100310791A1 (en) | 2010-12-09 |
EP2242092A4 (en) | 2014-02-05 |
KR101158377B1 (ko) | 2012-06-25 |
EP2242092A1 (en) | 2010-10-20 |
WO2009096259A1 (ja) | 2009-08-06 |
JP5297048B2 (ja) | 2013-09-25 |
US20140057459A1 (en) | 2014-02-27 |
TWI373807B (ja) | 2012-10-01 |
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