JP2009164339A - 電界効果トランジスタ - Google Patents
電界効果トランジスタ Download PDFInfo
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- JP2009164339A JP2009164339A JP2008000470A JP2008000470A JP2009164339A JP 2009164339 A JP2009164339 A JP 2009164339A JP 2008000470 A JP2008000470 A JP 2008000470A JP 2008000470 A JP2008000470 A JP 2008000470A JP 2009164339 A JP2009164339 A JP 2009164339A
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- 230000005669 field effect Effects 0.000 title claims abstract description 71
- 239000000758 substrate Substances 0.000 claims abstract description 46
- 230000005684 electric field Effects 0.000 claims abstract description 41
- 239000004065 semiconductor Substances 0.000 claims abstract description 26
- 239000010410 layer Substances 0.000 claims description 54
- 229910003070 TaOx Inorganic materials 0.000 claims description 11
- 229910004205 SiNX Inorganic materials 0.000 claims description 10
- 239000002344 surface layer Substances 0.000 claims description 10
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 6
- 239000002356 single layer Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 description 45
- 238000004519 manufacturing process Methods 0.000 description 28
- 229910052751 metal Inorganic materials 0.000 description 25
- 239000002184 metal Substances 0.000 description 25
- 230000008569 process Effects 0.000 description 25
- 230000015572 biosynthetic process Effects 0.000 description 21
- 238000005530 etching Methods 0.000 description 17
- 238000004544 sputter deposition Methods 0.000 description 12
- 230000015556 catabolic process Effects 0.000 description 11
- 238000001312 dry etching Methods 0.000 description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 10
- 238000005229 chemical vapour deposition Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 238000001020 plasma etching Methods 0.000 description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- 238000001771 vacuum deposition Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 229910002704 AlGaN Inorganic materials 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000012141 concentrate Substances 0.000 description 3
- 238000010030 laminating Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- VYRNMWDESIRGOS-UHFFFAOYSA-N [Mo].[Au] Chemical compound [Mo].[Au] VYRNMWDESIRGOS-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000003353 gold alloy Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
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- H01—ELECTRIC ELEMENTS
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/66848—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET
- H01L29/66856—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET with an active layer made of a group 13/15 material
- H01L29/66863—Lateral single gate transistors
- H01L29/66871—Processes wherein the final gate is made after the formation of the source and drain regions in the active layer, e.g. dummy-gate processes
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/76—Unipolar devices, e.g. field effect transistors
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- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
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- H01L29/2003—Nitride compounds
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- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
【解決手段】 本電界効果トランジスタ30は、GaN系エピタキシャル基板32の電子走行層上に、ゲート電極38を挟んで所定の間隔を隔てて配されたソース電極34及びドレイン電極36を備え、ゲート電極38の上部に、ドレイン電極36側に庇状に突き出したフィールドプレート40が形成され、ソース電極34及びドレイン電極36がオーミック接触するエピタキシャル基板32の電子走行層とフィールドプレート40との間に、誘電体膜46が形成され、誘電体膜46は、フィールドプレート40の直下領域においてフィールドプレート終端面と面一状態で切れ込み50が形成されその下端からドレイン電極36にオーバーラップするようにドレイン電極36に向かって延びる。
【選択図】 図1
Description
図1は本発明の第1の実施の形態に係る電界効果トランジスタ30の構成を簡略化して示す図である。
図4は本発明の第2の実施の形態に係る電界効果トランジスタ30の構成を簡略化して示す図である。
図7は本発明の第3の実施の形態に係る電界効果トランジスタ30の構成を簡略化して示す断面図である。
図11は本発明の第4の実施の形態に係る電界効果トランジスタ30の構成を簡略化して示す図である。
図15は本発明の第5の実施の形態に係る電界効果トランジスタ30の構成を簡略化して示す断面図である。
図19は本発明の第6の実施の形態に係る電界効果トランジスタ30の平面図、図20は図19のX−X線に沿う断面図である。
32 GaN系エピタキシャル基板
34 ソース電極
36 ドレイン電極
38 ゲート電極
40,170 フィールドプレート
46 誘電体膜
50,176 切れ込み
80,130 リセス
100 第1の誘電体膜
102 第2の誘電体膜
Claims (8)
- 半導体基板の表面層上に、ゲート電極を挟んで所定の間隔を隔てて配置されたソース電極及びドレイン電極を備えている電界効果トランジスタであって、
前記ゲート電極の上部に、前記ドレイン電極側に庇状に突き出したフィールドプレートが形成され、
前記ソース電極及び前記ドレイン電極がオーミック接触する前記半導体基板の表面層と前記フィールドプレートとの間に、誘電体膜が形成され、
前記誘電体膜は、前記フィールドプレートの直下領域において当該フィールドプレートの終端面と面一状態となるように切れ込み且つ当該切れ込みの下端から前記ドレイン電極に接続するように当該ドレイン電極に向かって延びていることを特徴とする電界効果トランジスタ。 - 半導体基板の表面層上に、ゲート電極を挟んで所定の間隔を隔てて配置されたソース電極及びドレイン電極を備えている電界効果トランジスタであって、
前記ソース電極の上部に、前記ゲート電極の上方を通過して前記ドレイン電極側に庇状に突き出したフィールドプレートが形成され、
前記ソース電極及び前記ドレイン電極がオーミック接触する前記半導体基板の表面層と前記フィールドプレートとの間に、誘電体膜が形成され、
前記誘電体膜は、前記フィールドプレートの直下領域において当該フィールドプレートの終端面と面一状態となるように切れ込み且つ当該切れ込みの下端から前記ドレイン電極に接続するように当該ドレイン電極に向かって延びていることを特徴とする電界効果トランジスタ。 - 前記誘電体膜の切れ込みは、
前記ソース電極に対する印加電圧を接地電位として前記ゲート電極に所定のゲート電圧を印加すると共に前記ドレイン電極に所定のドレイン電圧を印加したときの、前記フィールドプレートの終端との境界をなす上端部での電界強度と下端部での電界強度とが等しくなるように、その深さ寸法が設定されていることを特徴とする請求項1又は請求項2の何れか1項に記載の電界効果トランジスタ。 - 前記ドレイン電極と前記フィールドプレートの終端面との間に、リセスが形成されていることを特徴とする請求項1〜請求項3の何れか1項に記載の電界効果トランジスタ。
- 前記誘電体膜は、TaOx、SiNx、SiO2又はHfOxからなる1層構造を有していることを特徴とする請求項1〜請求項4の何れか1項に記載の電界効果トランジスタ。
- 前記誘電体膜は、2層構造を有し、
上層の第1の誘電体膜の誘電率は、下層の第2の誘電体膜の誘電率よりも高く設定されていることを特徴とする請求項1〜請求項4の何れか1項に記載の電界効果トランジスタ。 - 前記第2の誘電体膜は、前記ゲート電極と前記半導体基板の表面層との間に介在していることを特徴とする請求項6に記載の電界効果トランジスタ。
- 前記第1の誘電体膜は、TaOx、SiNx、SiO2又はHfOxからなり、
前記第2の誘電体膜は、SiNxからなることを請求項6又は請求項7に記載の電界効果トランジスタ。
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JP2008000470A JP5134378B2 (ja) | 2008-01-07 | 2008-01-07 | 電界効果トランジスタ |
US12/348,927 US8004022B2 (en) | 2008-01-07 | 2009-01-06 | Field effect transistor |
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JP2008000470A JP5134378B2 (ja) | 2008-01-07 | 2008-01-07 | 電界効果トランジスタ |
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JP2011156754A Division JP5596636B2 (ja) | 2011-07-15 | 2011-07-15 | 電界効果トランジスタ |
JP2011156753A Division JP2012004573A (ja) | 2011-07-15 | 2011-07-15 | 電界効果トランジスタ |
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Cited By (7)
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JP2011142182A (ja) * | 2010-01-06 | 2011-07-21 | Sharp Corp | 電界効果トランジスタ |
JP2011204780A (ja) * | 2010-03-24 | 2011-10-13 | Toshiba Corp | 半導体装置 |
JP2012018972A (ja) * | 2010-07-06 | 2012-01-26 | Sanken Electric Co Ltd | 半導体装置 |
JP2014072360A (ja) * | 2012-09-28 | 2014-04-21 | Fujitsu Ltd | 化合物半導体装置及びその製造方法 |
JP2015056457A (ja) * | 2013-09-10 | 2015-03-23 | 株式会社東芝 | 半導体装置 |
CN110998860A (zh) * | 2017-09-25 | 2020-04-10 | 雷声公司 | 用于场效应晶体管的电极结构 |
JP2021500744A (ja) * | 2017-10-24 | 2021-01-07 | レイセオン カンパニー | 低キャパシタンスフィールドプレート構造を有するトランジスタ |
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US20140264588A1 (en) * | 2013-03-14 | 2014-09-18 | Taiwan Semiconductor Manufacturing Co. Ltd. | Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) with Step Oxide |
US20140319586A1 (en) * | 2013-04-26 | 2014-10-30 | Raytheon Company | Photolithographic, thickness non-uniformity, compensation features for optical photolithographic semiconductor structure formation |
CN103779410B (zh) * | 2014-01-22 | 2018-02-27 | 西安电子科技大学 | 基于超结漏场板的槽栅高压器件及其制作方法 |
CN103779411B (zh) * | 2014-01-22 | 2017-01-25 | 西安电子科技大学 | 基于超结槽栅的高压器件及其制作方法 |
CN103762234B (zh) * | 2014-01-22 | 2016-03-02 | 西安电子科技大学 | 基于超结漏场板的AlGaN/GaN MISHEMT高压器件及其制作方法 |
CN112864015B (zh) * | 2021-01-27 | 2022-07-05 | 浙江集迈科微电子有限公司 | GaN器件及制备方法 |
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JP2015056457A (ja) * | 2013-09-10 | 2015-03-23 | 株式会社東芝 | 半導体装置 |
US9209255B2 (en) | 2013-09-10 | 2015-12-08 | Kabushiki Kaisha Toshiba | Semiconductor device including an electrode structure formed on nitride semiconductor layers |
CN110998860A (zh) * | 2017-09-25 | 2020-04-10 | 雷声公司 | 用于场效应晶体管的电极结构 |
JP2021500744A (ja) * | 2017-10-24 | 2021-01-07 | レイセオン カンパニー | 低キャパシタンスフィールドプレート構造を有するトランジスタ |
JP7069308B2 (ja) | 2017-10-24 | 2022-05-17 | レイセオン カンパニー | 低キャパシタンスフィールドプレート構造を有するトランジスタ |
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US20090206373A1 (en) | 2009-08-20 |
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