JP2009158918A5 - - Google Patents
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- Publication number
- JP2009158918A5 JP2009158918A5 JP2008244684A JP2008244684A JP2009158918A5 JP 2009158918 A5 JP2009158918 A5 JP 2009158918A5 JP 2008244684 A JP2008244684 A JP 2008244684A JP 2008244684 A JP2008244684 A JP 2008244684A JP 2009158918 A5 JP2009158918 A5 JP 2009158918A5
- Authority
- JP
- Japan
- Prior art keywords
- gas
- chamber
- hydrogen
- amount
- containing gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000007789 gas Substances 0.000 claims 28
- 238000000034 method Methods 0.000 claims 16
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 12
- 239000001257 hydrogen Substances 0.000 claims 12
- 229910052739 hydrogen Inorganic materials 0.000 claims 12
- 239000000203 mixture Substances 0.000 claims 10
- 239000000758 substrate Substances 0.000 claims 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 7
- 239000001301 oxygen Substances 0.000 claims 7
- 229910052760 oxygen Inorganic materials 0.000 claims 7
- 239000002131 composite material Substances 0.000 claims 5
- 230000001590 oxidative effect Effects 0.000 claims 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 4
- 239000000463 material Substances 0.000 claims 4
- 229910052710 silicon Inorganic materials 0.000 claims 4
- 239000010703 silicon Substances 0.000 claims 4
- 229910052751 metal Inorganic materials 0.000 claims 3
- 239000002184 metal Substances 0.000 claims 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 2
- 238000010438 heat treatment Methods 0.000 claims 2
- 150000002431 hydrogen Chemical class 0.000 claims 2
- 239000010936 titanium Substances 0.000 claims 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims 1
- 229910052786 argon Inorganic materials 0.000 claims 1
- IVHJCRXBQPGLOV-UHFFFAOYSA-N azanylidynetungsten Chemical compound [W]#N IVHJCRXBQPGLOV-UHFFFAOYSA-N 0.000 claims 1
- 239000010941 cobalt Substances 0.000 claims 1
- 229910017052 cobalt Inorganic materials 0.000 claims 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 1
- 229910001873 dinitrogen Inorganic materials 0.000 claims 1
- 239000001307 helium Substances 0.000 claims 1
- 229910052734 helium Inorganic materials 0.000 claims 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims 1
- 229910052754 neon Inorganic materials 0.000 claims 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
- 229910052724 xenon Inorganic materials 0.000 claims 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/860,161 US7951728B2 (en) | 2007-09-24 | 2007-09-24 | Method of improving oxide growth rate of selective oxidation processes |
| US11/860,161 | 2007-09-24 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011201340A Division JP2012044192A (ja) | 2007-09-24 | 2011-09-15 | 選択的酸化プロセスの酸化物成長速度の改良方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009158918A JP2009158918A (ja) | 2009-07-16 |
| JP2009158918A5 true JP2009158918A5 (enExample) | 2011-11-04 |
| JP5451018B2 JP5451018B2 (ja) | 2014-03-26 |
Family
ID=40297951
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008244684A Active JP5451018B2 (ja) | 2007-09-24 | 2008-09-24 | 選択的酸化プロセスの酸化物成長速度の改良方法 |
| JP2011201340A Pending JP2012044192A (ja) | 2007-09-24 | 2011-09-15 | 選択的酸化プロセスの酸化物成長速度の改良方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011201340A Pending JP2012044192A (ja) | 2007-09-24 | 2011-09-15 | 選択的酸化プロセスの酸化物成長速度の改良方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (3) | US7951728B2 (enExample) |
| EP (2) | EP3540763A1 (enExample) |
| JP (2) | JP5451018B2 (enExample) |
| KR (1) | KR101028441B1 (enExample) |
| CN (2) | CN101404253A (enExample) |
| SG (1) | SG151226A1 (enExample) |
| TW (2) | TWI436425B (enExample) |
Families Citing this family (41)
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| JP5211464B2 (ja) * | 2006-10-20 | 2013-06-12 | 東京エレクトロン株式会社 | 被処理体の酸化装置 |
| US7951728B2 (en) * | 2007-09-24 | 2011-05-31 | Applied Materials, Inc. | Method of improving oxide growth rate of selective oxidation processes |
| WO2010147937A2 (en) * | 2009-06-15 | 2010-12-23 | Applied Materials, Inc. | Enhancing nand flash floating gate performance |
| JP5396180B2 (ja) * | 2009-07-27 | 2014-01-22 | 東京エレクトロン株式会社 | 選択酸化処理方法、選択酸化処理装置およびコンピュータ読み取り可能な記憶媒体 |
| KR102028779B1 (ko) * | 2012-02-13 | 2019-10-04 | 어플라이드 머티어리얼스, 인코포레이티드 | 기판의 선택적 산화를 위한 방법 및 장치 |
| US20140015031A1 (en) * | 2012-07-12 | 2014-01-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus and Method for Memory Device |
| CN103165432B (zh) * | 2013-03-15 | 2016-08-03 | 上海华力微电子有限公司 | 一种栅氧化层的制备方法 |
| JP5636575B2 (ja) * | 2013-08-28 | 2014-12-10 | 株式会社ユーテック | 水蒸気加圧急速加熱装置及び酸化物材料膜の製造方法 |
| US20160254145A1 (en) * | 2015-02-27 | 2016-09-01 | Globalfoundries Inc. | Methods for fabricating semiconductor structure with condensed silicon germanium layer |
| WO2018052476A1 (en) | 2016-09-14 | 2018-03-22 | Applied Materials, Inc. | Steam oxidation initiation for high aspect ratio conformal radical oxidation |
| US10224224B2 (en) | 2017-03-10 | 2019-03-05 | Micromaterials, LLC | High pressure wafer processing systems and related methods |
| US10847360B2 (en) | 2017-05-25 | 2020-11-24 | Applied Materials, Inc. | High pressure treatment of silicon nitride film |
| US10622214B2 (en) | 2017-05-25 | 2020-04-14 | Applied Materials, Inc. | Tungsten defluorination by high pressure treatment |
| KR102574914B1 (ko) | 2017-06-02 | 2023-09-04 | 어플라이드 머티어리얼스, 인코포레이티드 | 보론 카바이드 하드마스크의 건식 스트리핑 |
| KR102405723B1 (ko) | 2017-08-18 | 2022-06-07 | 어플라이드 머티어리얼스, 인코포레이티드 | 고압 및 고온 어닐링 챔버 |
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| CN111095524B (zh) | 2017-09-12 | 2023-10-03 | 应用材料公司 | 用于使用保护阻挡物层制造半导体结构的设备和方法 |
| US10643867B2 (en) | 2017-11-03 | 2020-05-05 | Applied Materials, Inc. | Annealing system and method |
| CN111357090B (zh) | 2017-11-11 | 2024-01-05 | 微材料有限责任公司 | 用于高压处理腔室的气体输送系统 |
| KR102622303B1 (ko) | 2017-11-16 | 2024-01-05 | 어플라이드 머티어리얼스, 인코포레이티드 | 고압 스팀 어닐링 프로세싱 장치 |
| KR20200075892A (ko) | 2017-11-17 | 2020-06-26 | 어플라이드 머티어리얼스, 인코포레이티드 | 고압 처리 시스템을 위한 컨덴서 시스템 |
| TWI794363B (zh) | 2017-12-20 | 2023-03-01 | 美商應用材料股份有限公司 | 金屬薄膜之高壓氧化 |
| CN111699549B (zh) | 2018-01-24 | 2025-03-28 | 应用材料公司 | 使用高压退火的接缝弥合 |
| KR102702244B1 (ko) | 2018-03-09 | 2024-09-03 | 어플라이드 머티어리얼스, 인코포레이티드 | 금속 함유 재료들을 위한 고압 어닐링 프로세스 |
| US10714331B2 (en) | 2018-04-04 | 2020-07-14 | Applied Materials, Inc. | Method to fabricate thermally stable low K-FinFET spacer |
| US10950429B2 (en) | 2018-05-08 | 2021-03-16 | Applied Materials, Inc. | Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom |
| US10566188B2 (en) | 2018-05-17 | 2020-02-18 | Applied Materials, Inc. | Method to improve film stability |
| US10704141B2 (en) | 2018-06-01 | 2020-07-07 | Applied Materials, Inc. | In-situ CVD and ALD coating of chamber to control metal contamination |
| US10748783B2 (en) | 2018-07-25 | 2020-08-18 | Applied Materials, Inc. | Gas delivery module |
| US10675581B2 (en) | 2018-08-06 | 2020-06-09 | Applied Materials, Inc. | Gas abatement apparatus |
| WO2020092002A1 (en) | 2018-10-30 | 2020-05-07 | Applied Materials, Inc. | Methods for etching a structure for semiconductor applications |
| CN112996950B (zh) | 2018-11-16 | 2024-04-05 | 应用材料公司 | 使用增强扩散工艺的膜沉积 |
| WO2020117462A1 (en) | 2018-12-07 | 2020-06-11 | Applied Materials, Inc. | Semiconductor processing system |
| US11322347B2 (en) | 2018-12-14 | 2022-05-03 | Applied Materials, Inc. | Conformal oxidation processes for 3D NAND |
| EP3942596A4 (en) * | 2019-03-20 | 2022-12-07 | Applied Materials, Inc. | THERMAL OXIDE GRADE LOW TEMPERATURE THICK OXIDE FILM GROWTH METHOD |
| TW202107528A (zh) * | 2019-04-30 | 2021-02-16 | 美商得昇科技股份有限公司 | 氫氣輔助的大氣自由基氧化 |
| US11901222B2 (en) | 2020-02-17 | 2024-02-13 | Applied Materials, Inc. | Multi-step process for flowable gap-fill film |
| US11569245B2 (en) * | 2020-10-22 | 2023-01-31 | Applied Materials, Inc. | Growth of thin oxide layer with amorphous silicon and oxidation |
| US11610776B2 (en) | 2021-02-08 | 2023-03-21 | Applied Materials, Inc. | Method of linearized film oxidation growth |
| US11996305B2 (en) | 2021-06-29 | 2024-05-28 | Applied Materials, Inc. | Selective oxidation on rapid thermal processing (RTP) chamber with active steam generation |
| JP2025504485A (ja) * | 2022-01-24 | 2025-02-12 | エイチピエスピ カンパニー リミテッド | 半導体工程の絶縁膜製造方法 |
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-
2007
- 2007-09-24 US US11/860,161 patent/US7951728B2/en active Active
-
2008
- 2008-09-19 EP EP19170626.6A patent/EP3540763A1/en not_active Withdrawn
- 2008-09-19 EP EP08164739.8A patent/EP2040287B1/en active Active
- 2008-09-23 SG SG200807086-4A patent/SG151226A1/en unknown
- 2008-09-24 TW TW100132118A patent/TWI436425B/zh active
- 2008-09-24 TW TW97136758A patent/TWI389206B/zh active
- 2008-09-24 KR KR20080093627A patent/KR101028441B1/ko active Active
- 2008-09-24 JP JP2008244684A patent/JP5451018B2/ja active Active
- 2008-09-24 CN CNA2008101612480A patent/CN101404253A/zh active Pending
- 2008-09-24 CN CN201410386390.0A patent/CN104269343A/zh active Pending
-
2011
- 2011-05-27 US US13/117,931 patent/US8546271B2/en active Active
- 2011-09-15 JP JP2011201340A patent/JP2012044192A/ja active Pending
-
2013
- 2013-10-01 US US14/043,505 patent/US9117661B2/en not_active Expired - Fee Related
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