JP2012516065A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2012516065A5 JP2012516065A5 JP2011554343A JP2011554343A JP2012516065A5 JP 2012516065 A5 JP2012516065 A5 JP 2012516065A5 JP 2011554343 A JP2011554343 A JP 2011554343A JP 2011554343 A JP2011554343 A JP 2011554343A JP 2012516065 A5 JP2012516065 A5 JP 2012516065A5
- Authority
- JP
- Japan
- Prior art keywords
- insulating layer
- annealing
- gas
- sputtering process
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims 54
- 238000000137 annealing Methods 0.000 claims 13
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 10
- 239000011737 fluorine Substances 0.000 claims 10
- 229910052731 fluorine Inorganic materials 0.000 claims 10
- 239000007789 gas Substances 0.000 claims 10
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims 9
- 238000004544 sputter deposition Methods 0.000 claims 9
- 230000004888 barrier function Effects 0.000 claims 8
- 229910052751 metal Inorganic materials 0.000 claims 7
- 239000002184 metal Substances 0.000 claims 7
- 239000011261 inert gas Substances 0.000 claims 6
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 5
- 229910052786 argon Inorganic materials 0.000 claims 5
- 229910052799 carbon Inorganic materials 0.000 claims 5
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims 5
- 230000000694 effects Effects 0.000 claims 4
- 239000011572 manganese Substances 0.000 claims 4
- 229910001512 metal fluoride Inorganic materials 0.000 claims 4
- 239000000758 substrate Substances 0.000 claims 4
- 239000010936 titanium Substances 0.000 claims 4
- 238000001704 evaporation Methods 0.000 claims 3
- 238000004519 manufacturing process Methods 0.000 claims 3
- 239000004065 semiconductor Substances 0.000 claims 3
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 2
- 239000011575 calcium Substances 0.000 claims 2
- 125000004432 carbon atom Chemical group C* 0.000 claims 2
- 229910002091 carbon monoxide Inorganic materials 0.000 claims 2
- 229910017052 cobalt Inorganic materials 0.000 claims 2
- 239000010941 cobalt Substances 0.000 claims 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims 2
- 239000011777 magnesium Substances 0.000 claims 2
- 229910052748 manganese Inorganic materials 0.000 claims 2
- 238000009832 plasma treatment Methods 0.000 claims 2
- 229910052707 ruthenium Inorganic materials 0.000 claims 2
- 239000011734 sodium Substances 0.000 claims 2
- 229910052715 tantalum Inorganic materials 0.000 claims 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 2
- 229910052719 titanium Inorganic materials 0.000 claims 2
- 238000005406 washing Methods 0.000 claims 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims 1
- 229910052788 barium Inorganic materials 0.000 claims 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims 1
- 229910052791 calcium Inorganic materials 0.000 claims 1
- 238000001035 drying Methods 0.000 claims 1
- 230000005284 excitation Effects 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 claims 1
- 238000007654 immersion Methods 0.000 claims 1
- 238000009413 insulation Methods 0.000 claims 1
- 229910052749 magnesium Inorganic materials 0.000 claims 1
- 239000011591 potassium Substances 0.000 claims 1
- 229910052700 potassium Inorganic materials 0.000 claims 1
- 229910000077 silane Inorganic materials 0.000 claims 1
- 229910052708 sodium Inorganic materials 0.000 claims 1
- 229910052712 strontium Inorganic materials 0.000 claims 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US20575209P | 2009-01-22 | 2009-01-22 | |
| US61/205,752 | 2009-01-22 | ||
| US20797109P | 2009-02-17 | 2009-02-17 | |
| US61/207,971 | 2009-02-17 | ||
| PCT/JP2010/000347 WO2010084759A1 (en) | 2009-01-22 | 2010-01-22 | Surface treatment for a fluorocarbon film |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012516065A JP2012516065A (ja) | 2012-07-12 |
| JP2012516065A5 true JP2012516065A5 (enExample) | 2012-11-29 |
| JP5271426B2 JP5271426B2 (ja) | 2013-08-21 |
Family
ID=42355815
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011554343A Expired - Fee Related JP5271426B2 (ja) | 2009-01-22 | 2010-01-22 | フッ化炭素膜の表面処理 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8765605B2 (enExample) |
| JP (1) | JP5271426B2 (enExample) |
| KR (1) | KR101269925B1 (enExample) |
| CN (1) | CN102292798A (enExample) |
| TW (1) | TW201044462A (enExample) |
| WO (1) | WO2010084759A1 (enExample) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5710606B2 (ja) * | 2009-06-26 | 2015-04-30 | 東京エレクトロン株式会社 | アモルファスカーボンのドーピングによるフルオロカーボン（ＣＦｘ）の接合の改善 |
| AU2012229325B2 (en) | 2011-03-11 | 2015-07-09 | Intercontinental Great Brands Llc | System and method of forming multilayer confectionery |
| CN103857292A (zh) | 2011-07-21 | 2014-06-11 | 洲际大品牌有限责任公司 | 用于形成和冷却咀嚼型胶基糖的系统和方法 |
| US8691709B2 (en) * | 2011-09-24 | 2014-04-08 | Tokyo Electron Limited | Method of forming metal carbide barrier layers for fluorocarbon films |
| JP5807511B2 (ja) * | 2011-10-27 | 2015-11-10 | 東京エレクトロン株式会社 | 成膜装置及びその運用方法 |
| KR101319929B1 (ko) * | 2011-11-03 | 2013-10-18 | 주식회사 우신산업 | 차량용 사이드 리피터의 제조방법 |
| US9111939B2 (en) * | 2012-07-27 | 2015-08-18 | Intel Corporation | Metallization of fluorocarbon-based dielectric for interconnects |
| JP2014103165A (ja) * | 2012-11-16 | 2014-06-05 | Tokyo Electron Ltd | 半導体素子の製造方法、および半導体素子の製造装置 |
| US9865501B2 (en) * | 2013-03-06 | 2018-01-09 | Lam Research Corporation | Method and apparatus for remote plasma treatment for reducing metal oxides on a metal seed layer |
| CN106061280A (zh) | 2014-03-03 | 2016-10-26 | 洲际大品牌有限责任公司 | 制造食品的方法 |
| CN104078344B (zh) * | 2014-07-11 | 2017-04-05 | 上海华力微电子有限公司 | 减少自对准硅化镍尖峰缺陷和管道缺陷的方法 |
| KR102378538B1 (ko) * | 2015-08-11 | 2022-03-25 | 삼성디스플레이 주식회사 | 표시 장치의 제조 방법 |
| KR102361083B1 (ko) * | 2015-09-01 | 2022-02-11 | 한국화학연구원 | 탄화불소 박막의 제조방법 및 이의 제조장치 |
| WO2017039339A1 (ko) * | 2015-09-01 | 2017-03-09 | 한국화학연구원 | 탄화불소 박막의 제조방법 |
| US10443146B2 (en) | 2017-03-30 | 2019-10-15 | Lam Research Corporation | Monitoring surface oxide on seed layers during electroplating |
| US12230539B2 (en) * | 2018-08-01 | 2025-02-18 | Texas Instruments Incorporated | Wafer chip scale packaging with ball attach before repassivation |
| US11527413B2 (en) * | 2021-01-29 | 2022-12-13 | Tokyo Electron Limited | Cyclic plasma etch process |
| US12317554B2 (en) * | 2021-04-09 | 2025-05-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Contact structures for semiconductor devices |
| TW202503924A (zh) * | 2023-07-10 | 2025-01-16 | 美商應用材料股份有限公司 | 形成互連結構的方法 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100379308B1 (ko) * | 1998-01-10 | 2003-04-10 | 동경 엘렉트론 주식회사 | 불소 첨가 탄소막으로 이루어지는 절연막을 구비하는반도체 디바이스 및 그 제조 방법 |
| JP3189781B2 (ja) * | 1998-04-08 | 2001-07-16 | 日本電気株式会社 | 半導体装置の製造方法 |
| JP4005295B2 (ja) * | 2000-03-31 | 2007-11-07 | 富士通株式会社 | 半導体装置の製造方法 |
| US20050064701A1 (en) * | 2003-09-19 | 2005-03-24 | International Business Machines Corporation | Formation of low resistance via contacts in interconnect structures |
| US7776736B2 (en) | 2004-05-11 | 2010-08-17 | Tokyo Electron Limited | Substrate for electronic device capable of suppressing fluorine atoms exposed at the surface of insulating film from reacting with water and method for processing same |
| JP4555143B2 (ja) | 2004-05-11 | 2010-09-29 | 東京エレクトロン株式会社 | 基板の処理方法 |
| KR101256035B1 (ko) | 2005-06-20 | 2013-04-18 | 고에키자이단호진 고쿠사이카가쿠 신고우자이단 | 층간 절연막 및 배선 구조와 그것들의 제조 방법 |
| JP2007067336A (ja) * | 2005-09-02 | 2007-03-15 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法及び半導体装置 |
| US7902641B2 (en) * | 2008-07-24 | 2011-03-08 | Tokyo Electron Limited | Semiconductor device and manufacturing method therefor |
-
2010
- 2010-01-21 TW TW099101690A patent/TW201044462A/zh unknown
- 2010-01-22 KR KR1020117017379A patent/KR101269925B1/ko not_active Expired - Fee Related
- 2010-01-22 US US13/138,242 patent/US8765605B2/en not_active Expired - Fee Related
- 2010-01-22 JP JP2011554343A patent/JP5271426B2/ja not_active Expired - Fee Related
- 2010-01-22 CN CN2010800052966A patent/CN102292798A/zh active Pending
- 2010-01-22 WO PCT/JP2010/000347 patent/WO2010084759A1/en not_active Ceased
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2012516065A5 (enExample) | ||
| JP5271426B2 (ja) | フッ化炭素膜の表面処理 | |
| TWI278023B (en) | Method for forming a high density dielectric film by chemical vapor deposition | |
| US9105695B2 (en) | Cobalt selectivity improvement in selective cobalt process sequence | |
| JP2009158918A5 (enExample) | ||
| TW200818306A (en) | Etch method in the manufacture of an integrated circuit | |
| TW201131005A (en) | Process for production of ni film | |
| JP2011517848A5 (enExample) | ||
| TW201214561A (en) | Method of manufacturing semiconductor device and substrate processing apparatus | |
| Valtiner et al. | Hydrogen adsorption on polar ZnO (0001)-Zn: Extending equilibrium surface phase diagrams to kinetically stabilized structures | |
| JP2018528610A (ja) | プラズマ原子層蒸着法を用いたシリコン窒化薄膜の製造方法 | |
| WO2011097178A3 (en) | Methods for nitridation and oxidation | |
| JP2018198318A (ja) | 半導体基板のための反応性硬化プロセス | |
| JP5942985B2 (ja) | プラズマエッチングガス及びプラズマエッチング方法 | |
| JP2007051327A5 (enExample) | ||
| JPWO2015093389A1 (ja) | 酸化物薄膜の形成方法および装置 | |
| JP5178511B2 (ja) | 絶縁膜のダメージ回復方法 | |
| JP5493343B2 (ja) | 貼り合わせウェーハの製造方法 | |
| US20130078797A1 (en) | Method for manufacturing a copper-diffusion barrier layer used in nano integrated circuit | |
| JP2010033889A5 (enExample) | ||
| TWI625412B (zh) | 沉積ｃｖｄ釕之方法 | |
| CN103681480A (zh) | 远程氢等离子体表面处理制备超薄铜籽晶层的方法及其应用 | |
| CN103426819A (zh) | 一种金属硬掩膜层及铜互连结构的制备方法 | |
| CN104835778A (zh) | 一种半导体器件的制作方法 | |
| TWI448576B (zh) | 低介電材料及其薄膜之製備方法 |