CN102292798A - 氟碳化合物膜的表面处理 - Google Patents

氟碳化合物膜的表面处理 Download PDF

Info

Publication number
CN102292798A
CN102292798A CN2010800052966A CN201080005296A CN102292798A CN 102292798 A CN102292798 A CN 102292798A CN 2010800052966 A CN2010800052966 A CN 2010800052966A CN 201080005296 A CN201080005296 A CN 201080005296A CN 102292798 A CN102292798 A CN 102292798A
Authority
CN
China
Prior art keywords
insulating barrier
accordance
cfx
described insulating
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2010800052966A
Other languages
English (en)
Chinese (zh)
Inventor
堀込正弘
黑鸟讬也
小林保男
松冈孝明
野泽俊久
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN102292798A publication Critical patent/CN102292798A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/32051—Deposition of metallic or metal-silicide layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02115—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material being carbon, e.g. alpha-C, diamond or hydrogen doped carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76814—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
    • H01L21/76826—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by contacting the layer with gases, liquids or plasmas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
    • H01L21/76861—Post-treatment or after-treatment not introducing additional chemical elements into the layer
    • H01L21/76864—Thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • H01L21/0212—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC the material being fluoro carbon compounds, e.g.(CFx) n, (CHxFy) n or polytetrafluoroethylene

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
CN2010800052966A 2009-01-22 2010-01-22 氟碳化合物膜的表面处理 Pending CN102292798A (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US20575209P 2009-01-22 2009-01-22
US61/205,752 2009-01-22
US20797109P 2009-02-17 2009-02-17
US61/207,971 2009-02-17
PCT/JP2010/000347 WO2010084759A1 (en) 2009-01-22 2010-01-22 Surface treatment for a fluorocarbon film

Publications (1)

Publication Number Publication Date
CN102292798A true CN102292798A (zh) 2011-12-21

Family

ID=42355815

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2010800052966A Pending CN102292798A (zh) 2009-01-22 2010-01-22 氟碳化合物膜的表面处理

Country Status (6)

Country Link
US (1) US8765605B2 (enExample)
JP (1) JP5271426B2 (enExample)
KR (1) KR101269925B1 (enExample)
CN (1) CN102292798A (enExample)
TW (1) TW201044462A (enExample)
WO (1) WO2010084759A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104078344A (zh) * 2014-07-11 2014-10-01 上海华力微电子有限公司 减少自对准硅化镍尖峰缺陷和管道缺陷的方法

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5710606B2 (ja) * 2009-06-26 2015-04-30 東京エレクトロン株式会社 アモルファスカーボンのドーピングによるフルオロカーボン（ＣＦｘ）の接合の改善
AU2012229325B2 (en) 2011-03-11 2015-07-09 Intercontinental Great Brands Llc System and method of forming multilayer confectionery
CN103857292A (zh) 2011-07-21 2014-06-11 洲际大品牌有限责任公司 用于形成和冷却咀嚼型胶基糖的系统和方法
US8691709B2 (en) * 2011-09-24 2014-04-08 Tokyo Electron Limited Method of forming metal carbide barrier layers for fluorocarbon films
JP5807511B2 (ja) * 2011-10-27 2015-11-10 東京エレクトロン株式会社 成膜装置及びその運用方法
KR101319929B1 (ko) * 2011-11-03 2013-10-18 주식회사 우신산업 차량용 사이드 리피터의 제조방법
US9111939B2 (en) * 2012-07-27 2015-08-18 Intel Corporation Metallization of fluorocarbon-based dielectric for interconnects
JP2014103165A (ja) * 2012-11-16 2014-06-05 Tokyo Electron Ltd 半導体素子の製造方法、および半導体素子の製造装置
US9865501B2 (en) * 2013-03-06 2018-01-09 Lam Research Corporation Method and apparatus for remote plasma treatment for reducing metal oxides on a metal seed layer
CN106061280A (zh) 2014-03-03 2016-10-26 洲际大品牌有限责任公司 制造食品的方法
KR102378538B1 (ko) * 2015-08-11 2022-03-25 삼성디스플레이 주식회사 표시 장치의 제조 방법
KR102361083B1 (ko) * 2015-09-01 2022-02-11 한국화학연구원 탄화불소 박막의 제조방법 및 이의 제조장치
WO2017039339A1 (ko) * 2015-09-01 2017-03-09 한국화학연구원 탄화불소 박막의 제조방법
US10443146B2 (en) 2017-03-30 2019-10-15 Lam Research Corporation Monitoring surface oxide on seed layers during electroplating
US12230539B2 (en) * 2018-08-01 2025-02-18 Texas Instruments Incorporated Wafer chip scale packaging with ball attach before repassivation
US11527413B2 (en) * 2021-01-29 2022-12-13 Tokyo Electron Limited Cyclic plasma etch process
US12317554B2 (en) * 2021-04-09 2025-05-27 Taiwan Semiconductor Manufacturing Company, Ltd. Contact structures for semiconductor devices
TW202503924A (zh) * 2023-07-10 2025-01-16 美商應用材料股份有限公司 形成互連結構的方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001284358A (ja) * 2000-03-31 2001-10-12 Fujitsu Ltd 半導体装置の製造方法及び半導体装置
CN1624895A (zh) * 2003-09-19 2005-06-08 国际商业机器公司 在互连结构中低电阻通道接触的形成
JP2007067336A (ja) * 2005-09-02 2007-03-15 Matsushita Electric Ind Co Ltd 半導体装置の製造方法及び半導体装置
CN1943021A (zh) * 2004-05-11 2007-04-04 东京毅力科创株式会社 电子装置用基板及其处理方法
CN101238555A (zh) * 2005-06-20 2008-08-06 国立大学法人东北大学 层间绝缘膜、布线结构以及它们的制造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100379308B1 (ko) * 1998-01-10 2003-04-10 동경 엘렉트론 주식회사 불소 첨가 탄소막으로 이루어지는 절연막을 구비하는반도체 디바이스 및 그 제조 방법
JP3189781B2 (ja) * 1998-04-08 2001-07-16 日本電気株式会社 半導体装置の製造方法
US7776736B2 (en) 2004-05-11 2010-08-17 Tokyo Electron Limited Substrate for electronic device capable of suppressing fluorine atoms exposed at the surface of insulating film from reacting with water and method for processing same
US7902641B2 (en) * 2008-07-24 2011-03-08 Tokyo Electron Limited Semiconductor device and manufacturing method therefor

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001284358A (ja) * 2000-03-31 2001-10-12 Fujitsu Ltd 半導体装置の製造方法及び半導体装置
CN1624895A (zh) * 2003-09-19 2005-06-08 国际商业机器公司 在互连结构中低电阻通道接触的形成
CN1943021A (zh) * 2004-05-11 2007-04-04 东京毅力科创株式会社 电子装置用基板及其处理方法
CN101238555A (zh) * 2005-06-20 2008-08-06 国立大学法人东北大学 层间绝缘膜、布线结构以及它们的制造方法
JP2007067336A (ja) * 2005-09-02 2007-03-15 Matsushita Electric Ind Co Ltd 半導体装置の製造方法及び半導体装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104078344A (zh) * 2014-07-11 2014-10-01 上海华力微电子有限公司 减少自对准硅化镍尖峰缺陷和管道缺陷的方法

Also Published As

Publication number Publication date
KR20110105847A (ko) 2011-09-27
JP2012516065A (ja) 2012-07-12
JP5271426B2 (ja) 2013-08-21
US8765605B2 (en) 2014-07-01
KR101269925B1 (ko) 2013-05-31
WO2010084759A1 (en) 2010-07-29
US20110318919A1 (en) 2011-12-29
TW201044462A (en) 2010-12-16

Similar Documents

Publication Publication Date Title
CN102292798A (zh) 氟碳化合物膜的表面处理
CN101569003B (zh) 半导体装置及其制造方法
CN100477158C (zh) 半导体器件的制造方法以及半导体器件
JP5392628B2 (ja) 層間絶縁膜および配線構造と、それらの製造方法
JP5522979B2 (ja) 成膜方法及び処理システム
TWI374482B (enExample)
TW200836294A (en) Method for fabricating semiconductor device
KR100332937B1 (ko) 반도체 장치 및 그 제조 방법
JPH10125782A (ja) 半導体装置の製造方法
JP5093479B2 (ja) 多孔質絶縁膜の形成方法
CN101425503B (zh) 半导体器件及其制造方法
Mori et al. Self‐Formation of a Ru/ZnO Multifunctional Bilayer for the Next‐Generation Interconnect Technology via Area‐Selective Atomic Layer Deposition
US20050277292A1 (en) Method for fabricating low resistivity barrier for copper interconnect
WO2007148535A1 (ja) 半導体装置及び半導体装置の製造方法
JP2011124472A (ja) 半導体装置の製造方法
JP5082411B2 (ja) 成膜方法
US20070269977A1 (en) Method of forming a multilayer wiring by the use of copper damascene technique
JP2002118112A (ja) 埋め込み配線構造を有する半導体装置の製法
CN101091001B (zh) 钽氮化物膜的形成方法
TW471112B (en) Method for forming silicon carbon nitride layer on low-k material
JP2006294679A (ja) 半導体装置とその製造方法
JP2006147895A (ja) 半導体装置の製造方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20111221

WD01 Invention patent application deemed withdrawn after publication