JP2009084625A - 原料ガスの供給システム及び成膜装置 - Google Patents

原料ガスの供給システム及び成膜装置 Download PDF

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Publication number
JP2009084625A
JP2009084625A JP2007255059A JP2007255059A JP2009084625A JP 2009084625 A JP2009084625 A JP 2009084625A JP 2007255059 A JP2007255059 A JP 2007255059A JP 2007255059 A JP2007255059 A JP 2007255059A JP 2009084625 A JP2009084625 A JP 2009084625A
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Japan
Prior art keywords
raw material
gas
valve
supply system
gas supply
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Pending
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JP2007255059A
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Japanese (ja)
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JP2009084625A5 (https=
Inventor
Masamichi Hara
正道 原
Jun Gomi
淳 五味
Shinji Maekawa
伸次 前川
Kaoru Yamamoto
薫 山本
Satoshi Taga
敏 多賀
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2007255059A priority Critical patent/JP2009084625A/ja
Priority to US12/680,041 priority patent/US20100236480A1/en
Priority to CN200880100433A priority patent/CN101772590A/zh
Priority to KR1020107000890A priority patent/KR20100063694A/ko
Priority to PCT/JP2008/067118 priority patent/WO2009041397A1/ja
Priority to TW97137043A priority patent/TW200932943A/zh
Publication of JP2009084625A publication Critical patent/JP2009084625A/ja
Publication of JP2009084625A5 publication Critical patent/JP2009084625A5/ja
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/8158—With indicator, register, recorder, alarm or inspection means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/8376—Combined

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2007255059A 2007-09-28 2007-09-28 原料ガスの供給システム及び成膜装置 Pending JP2009084625A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2007255059A JP2009084625A (ja) 2007-09-28 2007-09-28 原料ガスの供給システム及び成膜装置
US12/680,041 US20100236480A1 (en) 2007-09-28 2008-09-22 Raw material gas supply system and film forming apparatus
CN200880100433A CN101772590A (zh) 2007-09-28 2008-09-22 原料气体的供给系统以及成膜装置
KR1020107000890A KR20100063694A (ko) 2007-09-28 2008-09-22 원료 가스의 공급 시스템 및 성막 장치
PCT/JP2008/067118 WO2009041397A1 (ja) 2007-09-28 2008-09-22 原料ガスの供給システム及び成膜装置
TW97137043A TW200932943A (en) 2007-09-28 2008-09-26 Raw material gas supply system and film deposition apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007255059A JP2009084625A (ja) 2007-09-28 2007-09-28 原料ガスの供給システム及び成膜装置

Publications (2)

Publication Number Publication Date
JP2009084625A true JP2009084625A (ja) 2009-04-23
JP2009084625A5 JP2009084625A5 (https=) 2010-09-02

Family

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Family Applications (1)

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JP2007255059A Pending JP2009084625A (ja) 2007-09-28 2007-09-28 原料ガスの供給システム及び成膜装置

Country Status (6)

Country Link
US (1) US20100236480A1 (https=)
JP (1) JP2009084625A (https=)
KR (1) KR20100063694A (https=)
CN (1) CN101772590A (https=)
TW (1) TW200932943A (https=)
WO (1) WO2009041397A1 (https=)

Cited By (12)

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JP2012172251A (ja) * 2011-02-24 2012-09-10 Tokyo Electron Ltd 成膜方法および記憶媒体
KR101214051B1 (ko) 2012-08-24 2012-12-20 한국세라믹기술원 전계방출용 ｃｎｔ-금속 혼합막 제조 방법 및 에어로졸 증착장치
CN103415911A (zh) * 2011-03-03 2013-11-27 三洋电机株式会社 催化化学气相成膜装置、使用该装置的成膜方法和催化剂体的表面处理方法
JP2015160963A (ja) * 2014-02-26 2015-09-07 東京エレクトロン株式会社 ルテニウム膜の成膜方法および成膜装置、ならびに半導体装置の製造方法
JP2019094561A (ja) * 2017-11-22 2019-06-20 日本エア・リキード株式会社 固体材料容器およびその固体材料容器に固体材料が充填されている固体材料製品
JP2020002426A (ja) * 2018-06-28 2020-01-09 信越化学工業株式会社 成膜装置及び成膜方法
JP2020013966A (ja) * 2018-07-20 2020-01-23 東京エレクトロン株式会社 成膜装置、原料供給装置及び成膜方法
WO2020162500A1 (ja) * 2019-02-07 2020-08-13 株式会社高純度化学研究所 薄膜形成用金属ハロゲン化合物の固体気化供給システム
WO2020162499A1 (ja) * 2019-02-07 2020-08-13 株式会社高純度化学研究所 蒸発原料用容器、及びその蒸発原料用容器を用いた固体気化供給システム
JP2021119614A (ja) * 2018-08-27 2021-08-12 信越化学工業株式会社 成膜装置、成膜基体の製造方法、半導体膜の製造装置及び半導体膜の製造方法
WO2021256308A1 (ja) * 2020-06-19 2021-12-23 東京エレクトロン株式会社 成膜方法およびプラズマ処理装置
JP2023523945A (ja) * 2020-04-30 2023-06-08 ラム リサーチ コーポレーション 化学物質送達システム用のヒーター設計ソリューション

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DE112010001483T5 (de) * 2009-04-03 2012-09-13 Tokyo Electron Limited Abscheidungskopf und Filmbildungsvorrichtung
CN102312222A (zh) * 2011-09-30 2012-01-11 上海宏力半导体制造有限公司 输气装置
JP2013115208A (ja) * 2011-11-28 2013-06-10 Tokyo Electron Ltd 気化原料供給装置、これを備える基板処理装置、及び気化原料供給方法
JP5766647B2 (ja) * 2012-03-28 2015-08-19 東京エレクトロン株式会社 熱処理システム、熱処理方法、及び、プログラム
US20130312663A1 (en) * 2012-05-22 2013-11-28 Applied Microstructures, Inc. Vapor Delivery Apparatus
JP5837869B2 (ja) * 2012-12-06 2015-12-24 株式会社フジキン 原料気化供給装置
KR101412507B1 (ko) * 2013-02-06 2014-06-26 공주대학교 산학협력단 유기금속화합물 가스 공급 장치
US9431238B2 (en) * 2014-06-05 2016-08-30 Asm Ip Holding B.V. Reactive curing process for semiconductor substrates
JP6409021B2 (ja) * 2016-05-20 2018-10-17 日本エア・リキード株式会社 昇華ガス供給システムおよび昇華ガス供給方法
KR102344996B1 (ko) 2017-08-18 2021-12-30 삼성전자주식회사 전구체 공급 유닛, 기판 처리 장치 및 그를 이용한 반도체 소자의 제조방법
US11162174B2 (en) * 2018-09-20 2021-11-02 Taiwan Semiconductor Manufacturing Co, Ltd. Liquid delivery and vaporization apparatus and method
JP7493389B2 (ja) * 2020-06-10 2024-05-31 東京エレクトロン株式会社 成膜装置および成膜方法
US12209303B2 (en) * 2021-01-15 2025-01-28 Applied Materials, Inc. Apparatus for providing a liquefied material, dosage system and method for dosing a liquefied material
US12494347B2 (en) * 2021-06-21 2025-12-09 Hitachi High-Tech Corporation Plasma processing apparatus
TWI877569B (zh) * 2022-04-28 2025-03-21 日商國際電氣股份有限公司 氣體供給系統，基板處理裝置及半導體裝置的製造方法
CN116978814A (zh) * 2022-04-28 2023-10-31 株式会社国际电气 气体供给系统、基板处理装置以及半导体装置的制造方法

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Cited By (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012172251A (ja) * 2011-02-24 2012-09-10 Tokyo Electron Ltd 成膜方法および記憶媒体
CN103415911A (zh) * 2011-03-03 2013-11-27 三洋电机株式会社 催化化学气相成膜装置、使用该装置的成膜方法和催化剂体的表面处理方法
KR101214051B1 (ko) 2012-08-24 2012-12-20 한국세라믹기술원 전계방출용 ｃｎｔ-금속 혼합막 제조 방법 및 에어로졸 증착장치
JP2015160963A (ja) * 2014-02-26 2015-09-07 東京エレクトロン株式会社 ルテニウム膜の成膜方法および成膜装置、ならびに半導体装置の製造方法
JP2019094561A (ja) * 2017-11-22 2019-06-20 日本エア・リキード株式会社 固体材料容器およびその固体材料容器に固体材料が充填されている固体材料製品
JP7080115B2 (ja) 2018-06-28 2022-06-03 信越化学工業株式会社 成膜装置及び成膜方法
JP2020002426A (ja) * 2018-06-28 2020-01-09 信越化学工業株式会社 成膜装置及び成膜方法
KR20200010059A (ko) 2018-07-20 2020-01-30 도쿄엘렉트론가부시키가이샤 성막 장치, 원료 공급 장치 및 성막 방법
US11753720B2 (en) 2018-07-20 2023-09-12 Tokyo Electron Limited Film forming apparatus, source supply apparatus, and film forming method
JP7094172B2 (ja) 2018-07-20 2022-07-01 東京エレクトロン株式会社 成膜装置、原料供給装置及び成膜方法
JP2020013966A (ja) * 2018-07-20 2020-01-23 東京エレクトロン株式会社 成膜装置、原料供給装置及び成膜方法
JP7075525B2 (ja) 2018-08-27 2022-05-25 信越化学工業株式会社 成膜装置、成膜基体の製造方法、半導体膜の製造装置及び半導体膜の製造方法
JP2021119614A (ja) * 2018-08-27 2021-08-12 信越化学工業株式会社 成膜装置、成膜基体の製造方法、半導体膜の製造装置及び半導体膜の製造方法
JP2020128565A (ja) * 2019-02-07 2020-08-27 株式会社高純度化学研究所 蒸発原料用容器、及びその蒸発原料用容器を用いた固体気化供給システム
JP2020128566A (ja) * 2019-02-07 2020-08-27 株式会社高純度化学研究所 薄膜形成用金属ハロゲン化合物の固体気化供給システム。
WO2020162499A1 (ja) * 2019-02-07 2020-08-13 株式会社高純度化学研究所 蒸発原料用容器、及びその蒸発原料用容器を用いた固体気化供給システム
US11566326B2 (en) 2019-02-07 2023-01-31 Kojundo Chemical Laboratory Co., Ltd. Vaporizable source material container and solid vaporization/supply system using the same
US11613809B2 (en) 2019-02-07 2023-03-28 Kojundo Chemical Laboratory Co., Ltd. Solid vaporization/supply system of metal halide for thin film deposition
WO2020162500A1 (ja) * 2019-02-07 2020-08-13 株式会社高純度化学研究所 薄膜形成用金属ハロゲン化合物の固体気化供給システム
JP2023523945A (ja) * 2020-04-30 2023-06-08 ラム リサーチ コーポレーション 化学物質送達システム用のヒーター設計ソリューション
JP7691439B2 (ja) 2020-04-30 2025-06-11 ラム リサーチ コーポレーション 化学物質送達システム用のヒーター設計ソリューション
US12460294B2 (en) 2020-04-30 2025-11-04 Lam Research Corporation Heater design solutions for chemical delivery systems
WO2021256308A1 (ja) * 2020-06-19 2021-12-23 東京エレクトロン株式会社 成膜方法およびプラズマ処理装置

Also Published As

Publication number Publication date
TW200932943A (en) 2009-08-01
US20100236480A1 (en) 2010-09-23
WO2009041397A1 (ja) 2009-04-02
KR20100063694A (ko) 2010-06-11
CN101772590A (zh) 2010-07-07

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