CN101772590A - 原料气体的供给系统以及成膜装置 - Google Patents

原料气体的供给系统以及成膜装置 Download PDF

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Publication number
CN101772590A
CN101772590A CN200880100433A CN200880100433A CN101772590A CN 101772590 A CN101772590 A CN 101772590A CN 200880100433 A CN200880100433 A CN 200880100433A CN 200880100433 A CN200880100433 A CN 200880100433A CN 101772590 A CN101772590 A CN 101772590A
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CN
China
Prior art keywords
raw material
mentioned
gas
valve
unstripped gas
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Pending
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CN200880100433A
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English (en)
Chinese (zh)
Inventor
原正道
五味淳
前川伸次
山本薰
多贺敏
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication of CN101772590A publication Critical patent/CN101772590A/zh
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/8158—With indicator, register, recorder, alarm or inspection means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/8376—Combined

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
CN200880100433A 2007-09-28 2008-09-22 原料气体的供给系统以及成膜装置 Pending CN101772590A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007255059A JP2009084625A (ja) 2007-09-28 2007-09-28 原料ガスの供給システム及び成膜装置
JP2007-255059 2007-09-28
PCT/JP2008/067118 WO2009041397A1 (ja) 2007-09-28 2008-09-22 原料ガスの供給システム及び成膜装置

Publications (1)

Publication Number Publication Date
CN101772590A true CN101772590A (zh) 2010-07-07

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN200880100433A Pending CN101772590A (zh) 2007-09-28 2008-09-22 原料气体的供给系统以及成膜装置

Country Status (6)

Country Link
US (1) US20100236480A1 (https=)
JP (1) JP2009084625A (https=)
KR (1) KR20100063694A (https=)
CN (1) CN101772590A (https=)
TW (1) TW200932943A (https=)
WO (1) WO2009041397A1 (https=)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102312222A (zh) * 2011-09-30 2012-01-11 上海宏力半导体制造有限公司 输气装置
CN103137525A (zh) * 2011-11-28 2013-06-05 东京毅力科创株式会社 气化原料供给装置、基板处理装置及气化原料供给方法
CN110735124A (zh) * 2018-07-20 2020-01-31 东京毅力科创株式会社 成膜装置、原料供给装置以及成膜方法
CN113366142A (zh) * 2019-02-07 2021-09-07 株式会社高纯度化学研究所 薄膜形成用金属卤化物的固体气化供给系统
CN116978814A (zh) * 2022-04-28 2023-10-31 株式会社国际电气 气体供给系统、基板处理装置以及半导体装置的制造方法

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DE112010001483T5 (de) * 2009-04-03 2012-09-13 Tokyo Electron Limited Abscheidungskopf und Filmbildungsvorrichtung
JP5659041B2 (ja) * 2011-02-24 2015-01-28 東京エレクトロン株式会社 成膜方法および記憶媒体
JP5919482B2 (ja) * 2011-03-03 2016-05-18 パナソニックＩｐマネジメント株式会社 触媒化学気相成膜装置、それを用いた成膜方法及び触媒体の表面処理方法
JP5766647B2 (ja) * 2012-03-28 2015-08-19 東京エレクトロン株式会社 熱処理システム、熱処理方法、及び、プログラム
US20130312663A1 (en) * 2012-05-22 2013-11-28 Applied Microstructures, Inc. Vapor Delivery Apparatus
KR101214051B1 (ko) 2012-08-24 2012-12-20 한국세라믹기술원 전계방출용 ｃｎｔ-금속 혼합막 제조 방법 및 에어로졸 증착장치
JP5837869B2 (ja) * 2012-12-06 2015-12-24 株式会社フジキン 原料気化供給装置
KR101412507B1 (ko) * 2013-02-06 2014-06-26 공주대학교 산학협력단 유기금속화합물 가스 공급 장치
JP2015160963A (ja) * 2014-02-26 2015-09-07 東京エレクトロン株式会社 ルテニウム膜の成膜方法および成膜装置、ならびに半導体装置の製造方法
US9431238B2 (en) * 2014-06-05 2016-08-30 Asm Ip Holding B.V. Reactive curing process for semiconductor substrates
JP6409021B2 (ja) * 2016-05-20 2018-10-17 日本エア・リキード株式会社 昇華ガス供給システムおよび昇華ガス供給方法
KR102344996B1 (ko) 2017-08-18 2021-12-30 삼성전자주식회사 전구체 공급 유닛, 기판 처리 장치 및 그를 이용한 반도체 소자의 제조방법
JP6425850B1 (ja) * 2017-11-22 2018-11-21 日本エア・リキード株式会社 固体材料容器およびその固体材料容器に固体材料が充填されている固体材料製品
JP7080115B2 (ja) * 2018-06-28 2022-06-03 信越化学工業株式会社 成膜装置及び成膜方法
JP6875336B2 (ja) * 2018-08-27 2021-05-26 信越化学工業株式会社 成膜方法
US11162174B2 (en) * 2018-09-20 2021-11-02 Taiwan Semiconductor Manufacturing Co, Ltd. Liquid delivery and vaporization apparatus and method
JP6887688B2 (ja) 2019-02-07 2021-06-16 株式会社高純度化学研究所 蒸発原料用容器、及びその蒸発原料用容器を用いた固体気化供給システム
CN115485412A (zh) 2020-04-30 2022-12-16 朗姆研究公司 用于化学品输送系统的加热器设计方案
JP7493389B2 (ja) * 2020-06-10 2024-05-31 東京エレクトロン株式会社 成膜装置および成膜方法
JP2022002246A (ja) * 2020-06-19 2022-01-06 東京エレクトロン株式会社 成膜方法およびプラズマ処理装置
US12209303B2 (en) * 2021-01-15 2025-01-28 Applied Materials, Inc. Apparatus for providing a liquefied material, dosage system and method for dosing a liquefied material
US12494347B2 (en) * 2021-06-21 2025-12-09 Hitachi High-Tech Corporation Plasma processing apparatus
TWI877569B (zh) * 2022-04-28 2025-03-21 日商國際電氣股份有限公司 氣體供給系統，基板處理裝置及半導體裝置的製造方法

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JPH09298171A (ja) * 1996-05-08 1997-11-18 Tokyo Electron Ltd 処理ガスの供給方法及びその装置
JPH11125344A (ja) * 1997-10-20 1999-05-11 Ebara Corp 弁装置
US6039809A (en) * 1998-01-27 2000-03-21 Mitsubishi Materials Silicon Corporation Method and apparatus for feeding a gas for epitaxial growth
JP2000226667A (ja) * 1998-11-30 2000-08-15 Anelva Corp Ｃｖｄ装置
US6331483B1 (en) * 1998-12-18 2001-12-18 Tokyo Electron Limited Method of film-forming of tungsten
KR100767762B1 (ko) * 2000-01-18 2007-10-17 에이에스엠 저펜 가부시기가이샤 자가 세정을 위한 원격 플라즈마 소스를 구비한 cvd 반도체 공정장치
TWI229886B (en) * 2002-07-10 2005-03-21 Tokyo Electron Ltd Filming device
WO2004111297A1 (ja) * 2003-06-10 2004-12-23 Tokyo Electron Limited 処理ガス供給機構、成膜装置および成膜方法
US7820981B2 (en) * 2003-12-12 2010-10-26 Semequip, Inc. Method and apparatus for extending equipment uptime in ion implantation
JP2005307233A (ja) * 2004-04-19 2005-11-04 Tokyo Electron Ltd 成膜装置及び成膜方法及びプロセスガスの供給方法
JP4502189B2 (ja) * 2004-06-02 2010-07-14 ルネサスエレクトロニクス株式会社 薄膜の形成方法および半導体装置の製造方法
US7651570B2 (en) * 2005-03-31 2010-01-26 Tokyo Electron Limited Solid precursor vaporization system for use in chemical vapor deposition

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102312222A (zh) * 2011-09-30 2012-01-11 上海宏力半导体制造有限公司 输气装置
CN103137525A (zh) * 2011-11-28 2013-06-05 东京毅力科创株式会社 气化原料供给装置、基板处理装置及气化原料供给方法
CN110735124A (zh) * 2018-07-20 2020-01-31 东京毅力科创株式会社 成膜装置、原料供给装置以及成膜方法
CN113366142A (zh) * 2019-02-07 2021-09-07 株式会社高纯度化学研究所 薄膜形成用金属卤化物的固体气化供给系统
CN116978814A (zh) * 2022-04-28 2023-10-31 株式会社国际电气 气体供给系统、基板处理装置以及半导体装置的制造方法

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TW200932943A (en) 2009-08-01
US20100236480A1 (en) 2010-09-23
WO2009041397A1 (ja) 2009-04-02
KR20100063694A (ko) 2010-06-11
JP2009084625A (ja) 2009-04-23

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Open date: 20100707