JP2009062599A5 - - Google Patents

Download PDF

Info

Publication number
JP2009062599A5
JP2009062599A5 JP2007233533A JP2007233533A JP2009062599A5 JP 2009062599 A5 JP2009062599 A5 JP 2009062599A5 JP 2007233533 A JP2007233533 A JP 2007233533A JP 2007233533 A JP2007233533 A JP 2007233533A JP 2009062599 A5 JP2009062599 A5 JP 2009062599A5
Authority
JP
Japan
Prior art keywords
exhaust
exhaust pipe
gas
film forming
exhaust gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2007233533A
Other languages
English (en)
Japanese (ja)
Other versions
JP5133013B2 (ja
JP2009062599A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2007233533A external-priority patent/JP5133013B2/ja
Priority to JP2007233533A priority Critical patent/JP5133013B2/ja
Priority to PCT/JP2008/065661 priority patent/WO2009034865A1/ja
Priority to CN200880106461XA priority patent/CN101802256B/zh
Priority to KR1020127003984A priority patent/KR101209997B1/ko
Priority to US12/677,417 priority patent/US20110020544A1/en
Priority to KR1020107005256A priority patent/KR101151513B1/ko
Publication of JP2009062599A publication Critical patent/JP2009062599A/ja
Publication of JP2009062599A5 publication Critical patent/JP2009062599A5/ja
Publication of JP5133013B2 publication Critical patent/JP5133013B2/ja
Application granted granted Critical
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2007233533A 2007-09-10 2007-09-10 成膜装置の排気系構造、成膜装置、および排ガスの処理方法 Expired - Fee Related JP5133013B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2007233533A JP5133013B2 (ja) 2007-09-10 2007-09-10 成膜装置の排気系構造、成膜装置、および排ガスの処理方法
US12/677,417 US20110020544A1 (en) 2007-09-10 2008-09-01 Exhaust system structure of film formation apparatus, film formation apparatus, and exhaust gas processing method
CN200880106461XA CN101802256B (zh) 2007-09-10 2008-09-01 成膜装置的排气系统结构、成膜装置和排出气体的处理方法
KR1020127003984A KR101209997B1 (ko) 2007-09-10 2008-09-01 성막 장치의 배기계 구조, 성막 장치 및 배기 가스의 처리 방법
PCT/JP2008/065661 WO2009034865A1 (ja) 2007-09-10 2008-09-01 成膜装置の排気系構造、成膜装置、および排ガスの処理方法
KR1020107005256A KR101151513B1 (ko) 2007-09-10 2008-09-01 성막 장치의 배기계 구조, 성막 장치 및 배기 가스의 처리 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007233533A JP5133013B2 (ja) 2007-09-10 2007-09-10 成膜装置の排気系構造、成膜装置、および排ガスの処理方法

Publications (3)

Publication Number Publication Date
JP2009062599A JP2009062599A (ja) 2009-03-26
JP2009062599A5 true JP2009062599A5 (enExample) 2010-07-01
JP5133013B2 JP5133013B2 (ja) 2013-01-30

Family

ID=40451874

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007233533A Expired - Fee Related JP5133013B2 (ja) 2007-09-10 2007-09-10 成膜装置の排気系構造、成膜装置、および排ガスの処理方法

Country Status (5)

Country Link
US (1) US20110020544A1 (enExample)
JP (1) JP5133013B2 (enExample)
KR (2) KR101209997B1 (enExample)
CN (1) CN101802256B (enExample)
WO (1) WO2009034865A1 (enExample)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090014423A1 (en) * 2007-07-10 2009-01-15 Xuegeng Li Concentric flow-through plasma reactor and methods therefor
US8968438B2 (en) 2007-07-10 2015-03-03 Innovalight, Inc. Methods and apparatus for the in situ collection of nucleated particles
US8471170B2 (en) 2007-07-10 2013-06-25 Innovalight, Inc. Methods and apparatus for the production of group IV nanoparticles in a flow-through plasma reactor
JP5277784B2 (ja) 2008-08-07 2013-08-28 東京エレクトロン株式会社 原料回収方法、トラップ機構、排気系及びこれを用いた成膜装置
JP5696348B2 (ja) 2008-08-09 2015-04-08 東京エレクトロン株式会社 金属回収方法、金属回収装置、排気系及びこれを用いた成膜装置
US20110195202A1 (en) * 2010-02-11 2011-08-11 Applied Materials, Inc. Oxygen pump purge to prevent reactive powder explosion
JP2012117127A (ja) * 2010-12-02 2012-06-21 Sumitomo Heavy Ind Ltd 成膜装置、成膜基板製造方法、および成膜基板
US10954594B2 (en) * 2015-09-30 2021-03-23 Applied Materials, Inc. High temperature vapor delivery system and method
JP6602709B2 (ja) * 2016-03-23 2019-11-06 大陽日酸株式会社 排ガス処理装置、及び排ガス処理方法
JP6559618B2 (ja) * 2016-06-23 2019-08-14 株式会社Kokusai Electric 半導体装置の製造方法、基板処理装置、およびプログラム
JP6828674B2 (ja) * 2017-12-20 2021-02-10 株式会社Sumco クリーニング方法、シリコン単結晶の製造方法、および、クリーニング装置
US11236021B2 (en) * 2017-12-22 2022-02-01 Goodrich Corporation Mitigating pyrophoric deposits in exhaust piping during SIC CVI/CVD processes by introducing water vapor into an outlet portion of a reaction chamber
KR102078584B1 (ko) * 2017-12-28 2020-02-19 (주) 엔피홀딩스 배기유체 처리장치 및 기판 처리 시스템
KR102054411B1 (ko) * 2017-12-28 2019-12-10 (주) 엔피홀딩스 배기유체 처리장치 및 기판 처리 시스템
JP7175782B2 (ja) * 2019-01-25 2022-11-21 株式会社東芝 ケイ素含有物質形成装置
JP6900412B2 (ja) * 2019-03-20 2021-07-07 株式会社Kokusai Electric 基板処理装置及び半導体装置の製造方法及びプログラム
CN111013303A (zh) * 2019-12-09 2020-04-17 木昇半导体科技(苏州)有限公司 氮化镓颗粒回收清扫真空系统
KR102250066B1 (ko) * 2020-02-17 2021-05-10 김홍석 반도체 및 에프피디의 공정챔버 배기관 내벽에 생성되는 불순물 감소 장치
TWI783382B (zh) * 2020-03-18 2022-11-11 日商國際電氣股份有限公司 基板處理裝置,排氣裝置及半導體裝置的製造方法
KR20220091744A (ko) 2020-12-24 2022-07-01 삼성전자주식회사 파우더 부산물 억제를 위해 흡착제를 포함하는 배기 가스 처리 시스템
KR102800611B1 (ko) * 2020-12-30 2025-04-29 세메스 주식회사 기판 처리 장치 및 이를 운용하는 방법
KR102521535B1 (ko) * 2021-09-02 2023-04-13 삼성전자주식회사 기판 처리 공정의 배출 물질 포집 장치 및 방법, 및 이 포집 장치를 포함하는 기판 처리 장치
WO2024039512A1 (en) * 2022-08-16 2024-02-22 Kulicke And Soffa Industries, Inc. Bonding systems for bonding a semiconductor element to a substrate, and related methods

Family Cites Families (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4940213A (en) * 1987-08-24 1990-07-10 Kabushiki Kaisha Toshiba Exhaust processing apparatus
TW241375B (enExample) * 1993-07-26 1995-02-21 Air Prod & Chem
JP3287730B2 (ja) * 1995-04-20 2002-06-04 東京エレクトロン株式会社 混入物の除去装置、これを用いた処理装置の真空排気系及びそのメンテナンス方法
JPH09232296A (ja) * 1996-02-23 1997-09-05 Mitsubishi Electric Corp 半導体装置の製造装置および製造方法
US5895530A (en) * 1996-02-26 1999-04-20 Applied Materials, Inc. Method and apparatus for directing fluid through a semiconductor processing chamber
JP3544604B2 (ja) * 1996-12-16 2004-07-21 株式会社荏原製作所 切替式トラップ装置
US5993916A (en) * 1996-07-12 1999-11-30 Applied Materials, Inc. Method for substrate processing with improved throughput and yield
US5928426A (en) * 1996-08-08 1999-07-27 Novellus Systems, Inc. Method and apparatus for treating exhaust gases from CVD, PECVD or plasma etch reactors
US5827370A (en) * 1997-01-13 1998-10-27 Mks Instruments, Inc. Method and apparatus for reducing build-up of material on inner surface of tube downstream from a reaction furnace
US6673673B1 (en) * 1997-04-22 2004-01-06 Samsung Electronics Co., Ltd. Method for manufacturing a semiconductor device having hemispherical grains
US6149729A (en) * 1997-05-22 2000-11-21 Tokyo Electron Limited Film forming apparatus and method
US6099649A (en) * 1997-12-23 2000-08-08 Applied Materials, Inc. Chemical vapor deposition hot-trap for unreacted precursor conversion and effluent removal
JP3567070B2 (ja) * 1997-12-27 2004-09-15 東京エレクトロン株式会社 熱処理装置及び熱処理方法
US20030101938A1 (en) * 1998-10-27 2003-06-05 Applied Materials, Inc. Apparatus for the deposition of high dielectric constant films
US6383300B1 (en) * 1998-11-27 2002-05-07 Tokyo Electron Ltd. Heat treatment apparatus and cleaning method of the same
US6238514B1 (en) * 1999-02-18 2001-05-29 Mks Instruments, Inc. Apparatus and method for removing condensable aluminum vapor from aluminum etch effluent
JP2000256856A (ja) * 1999-03-11 2000-09-19 Tokyo Electron Ltd 処理装置及び処理装置用真空排気システム及び減圧cvd装置及び減圧cvd装置用真空排気システム及びトラップ装置
JP4487338B2 (ja) * 1999-08-31 2010-06-23 東京エレクトロン株式会社 成膜処理装置及び成膜処理方法
US6500487B1 (en) * 1999-10-18 2002-12-31 Advanced Technology Materials, Inc Abatement of effluent from chemical vapor deposition processes using ligand exchange resistant metal-organic precursor solutions
US6773687B1 (en) * 1999-11-24 2004-08-10 Tokyo Electron Limited Exhaust apparatus for process apparatus and method of removing impurity gas
JP4599701B2 (ja) * 1999-11-24 2010-12-15 東京エレクトロン株式会社 成膜装置の排気系構造及び不純物ガスの除去方法
JP4162366B2 (ja) * 2000-03-31 2008-10-08 田中貴金属工業株式会社 Cvd薄膜形成プロセス及びcvd薄膜製造装置
JP2001293332A (ja) 2000-04-11 2001-10-23 Nippon Sanso Corp Cvd排ガスの処理回収方法及び装置
US6800254B1 (en) * 2000-06-07 2004-10-05 Tegal Corporation Visual indicator cold trapping system
US6998097B1 (en) * 2000-06-07 2006-02-14 Tegal Corporation High pressure chemical vapor trapping system
JP2002025909A (ja) * 2000-06-30 2002-01-25 Sony Corp 成膜装置用除害装置及びこれを用いた成膜装置における除害方法
US6844273B2 (en) * 2001-02-07 2005-01-18 Tokyo Electron Limited Precleaning method of precleaning a silicon nitride film forming system
FR2825295B1 (fr) * 2001-05-31 2004-05-28 Air Liquide Application des plasmas denses crees a pression atmospherique au traitement d'effluents gazeux
US7060234B2 (en) * 2001-07-18 2006-06-13 Applied Materials Process and apparatus for abatement of by products generated from deposition processes and cleaning of deposition chambers
US6528420B1 (en) * 2002-01-18 2003-03-04 Chartered Semiconductor Manufacturing Ltd. Double acting cold trap
JP4074461B2 (ja) * 2002-02-06 2008-04-09 東京エレクトロン株式会社 成膜方法および成膜装置、半導体装置の製造方法
JP2003245520A (ja) * 2002-02-26 2003-09-02 Seiko Epson Corp Pfc分解方法、pfc分解装置及び半導体装置の製造方法
KR100505670B1 (ko) * 2003-02-05 2005-08-03 삼성전자주식회사 부산물 제거용 고온 유체 공급 장치를 구비한 반도체 소자제조 장치
US20050161158A1 (en) * 2003-12-23 2005-07-28 Schumacher John C. Exhaust conditioning system for semiconductor reactor
JP2005340283A (ja) * 2004-05-24 2005-12-08 Hitachi Kokusai Electric Inc 基板処理装置
US20060021571A1 (en) * 2004-07-28 2006-02-02 Taiwan Semiconductor Manufacturing Co., Ltd. Vacuum pump line with nickel-chromium heater layer
TWI279260B (en) * 2004-10-12 2007-04-21 Applied Materials Inc Endpoint detector and particle monitor
JP4236201B2 (ja) * 2005-08-30 2009-03-11 富士通マイクロエレクトロニクス株式会社 半導体装置の製造方法
JP5036354B2 (ja) * 2006-04-04 2012-09-26 東京エレクトロン株式会社 成膜装置の排気系構造、成膜装置、および排ガスの処理方法
JP2009016782A (ja) * 2007-06-04 2009-01-22 Tokyo Electron Ltd 成膜方法及び成膜装置
WO2009038168A1 (ja) * 2007-09-21 2009-03-26 Tokyo Electron Limited 成膜装置および成膜方法
JP5366235B2 (ja) * 2008-01-28 2013-12-11 東京エレクトロン株式会社 半導体装置の製造方法、半導体製造装置及び記憶媒体
JP5417754B2 (ja) * 2008-07-11 2014-02-19 東京エレクトロン株式会社 成膜方法及び処理システム
JP2010212492A (ja) * 2009-03-11 2010-09-24 Tokyo Electron Ltd 半導体装置の製造方法
US8531033B2 (en) * 2009-09-07 2013-09-10 Advanced Interconnect Materials, Llc Contact plug structure, semiconductor device, and method for forming contact plug
US9029264B2 (en) * 2012-03-14 2015-05-12 Applied Materials, Inc. Methods for depositing a tin-containing layer on a substrate

Similar Documents

Publication Publication Date Title
JP2009062599A5 (enExample)
TWI470108B (zh) The system of the exhaust system of the film forming device and the film forming device
CN101802256A (zh) 成膜装置的排气系统结构、成膜装置和排出气体的处理方法
JP2016216817A5 (enExample)
CN101399182B (zh) 基板处理装置及基板处理方法
JP2020522882A5 (enExample)
KR20200139273A (ko) 가스 부산물 저감 및 포어라인 세정을 위한 장치
WO2010047970A3 (en) Method and apparatus for removing photoresist
WO2005102545A3 (en) System and method of removing chamber residues from a plasma processing system in a dry cleaning process
KR101923212B1 (ko) 암모니아 제거 장치 및 제거 방법
JP2009094115A5 (enExample)
CN109155233B (zh) 利用氧等离子体清洁循环的等离子体减量固体回避法
TWI456085B (zh) 成膜裝置及成膜方法
TW200609032A (en) Exhaust gas decomposition processor
TW200535911A (en) Method for cleaning film-forming apparatuses
JP2010219308A5 (ja) 半導体装置の製造方法、基板処理方法及び基板処理装置
JP2009154091A (ja) 排ガス処理装置および排ガス処理方法、ならびに薄膜形成装置
JP2006210948A5 (enExample)
JP2010119935A (ja) 排ガス処理装置及び半導体装置の製造方法
JP2007142237A5 (enExample)
KR101666069B1 (ko) 반도체 폐가스 처리용 스크러버의 출력 저감방법 및 장치
JP4584121B2 (ja) アルカリ賦活の排ガスの処理方法
KR20140010686A (ko) 반도체 공정 펌프 및 배기라인의 부산물 제어 방법
JP5498752B2 (ja) 排ガス処理方法及び排ガス処理装置
JP2010111888A5 (enExample)