JP2009062599A5 - - Google Patents
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- Publication number
- JP2009062599A5 JP2009062599A5 JP2007233533A JP2007233533A JP2009062599A5 JP 2009062599 A5 JP2009062599 A5 JP 2009062599A5 JP 2007233533 A JP2007233533 A JP 2007233533A JP 2007233533 A JP2007233533 A JP 2007233533A JP 2009062599 A5 JP2009062599 A5 JP 2009062599A5
- Authority
- JP
- Japan
- Prior art keywords
- exhaust
- exhaust pipe
- gas
- film forming
- exhaust gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007800 oxidant agent Substances 0.000 claims description 24
- 230000001590 oxidative effect Effects 0.000 claims description 24
- 150000001875 compounds Chemical class 0.000 claims description 20
- 239000006227 byproduct Substances 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 12
- 239000000047 product Substances 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 6
- 238000001784 detoxification Methods 0.000 claims description 4
- 239000002994 raw material Substances 0.000 claims description 2
- 238000011144 upstream manufacturing Methods 0.000 claims 6
- 230000008021 deposition Effects 0.000 claims 1
- 238000007599 discharging Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 1
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007233533A JP5133013B2 (ja) | 2007-09-10 | 2007-09-10 | 成膜装置の排気系構造、成膜装置、および排ガスの処理方法 |
| US12/677,417 US20110020544A1 (en) | 2007-09-10 | 2008-09-01 | Exhaust system structure of film formation apparatus, film formation apparatus, and exhaust gas processing method |
| CN200880106461XA CN101802256B (zh) | 2007-09-10 | 2008-09-01 | 成膜装置的排气系统结构、成膜装置和排出气体的处理方法 |
| KR1020127003984A KR101209997B1 (ko) | 2007-09-10 | 2008-09-01 | 성막 장치의 배기계 구조, 성막 장치 및 배기 가스의 처리 방법 |
| PCT/JP2008/065661 WO2009034865A1 (ja) | 2007-09-10 | 2008-09-01 | 成膜装置の排気系構造、成膜装置、および排ガスの処理方法 |
| KR1020107005256A KR101151513B1 (ko) | 2007-09-10 | 2008-09-01 | 성막 장치의 배기계 구조, 성막 장치 및 배기 가스의 처리 방법 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007233533A JP5133013B2 (ja) | 2007-09-10 | 2007-09-10 | 成膜装置の排気系構造、成膜装置、および排ガスの処理方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009062599A JP2009062599A (ja) | 2009-03-26 |
| JP2009062599A5 true JP2009062599A5 (enExample) | 2010-07-01 |
| JP5133013B2 JP5133013B2 (ja) | 2013-01-30 |
Family
ID=40451874
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007233533A Expired - Fee Related JP5133013B2 (ja) | 2007-09-10 | 2007-09-10 | 成膜装置の排気系構造、成膜装置、および排ガスの処理方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20110020544A1 (enExample) |
| JP (1) | JP5133013B2 (enExample) |
| KR (2) | KR101209997B1 (enExample) |
| CN (1) | CN101802256B (enExample) |
| WO (1) | WO2009034865A1 (enExample) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090014423A1 (en) * | 2007-07-10 | 2009-01-15 | Xuegeng Li | Concentric flow-through plasma reactor and methods therefor |
| US8968438B2 (en) | 2007-07-10 | 2015-03-03 | Innovalight, Inc. | Methods and apparatus for the in situ collection of nucleated particles |
| US8471170B2 (en) | 2007-07-10 | 2013-06-25 | Innovalight, Inc. | Methods and apparatus for the production of group IV nanoparticles in a flow-through plasma reactor |
| JP5277784B2 (ja) | 2008-08-07 | 2013-08-28 | 東京エレクトロン株式会社 | 原料回収方法、トラップ機構、排気系及びこれを用いた成膜装置 |
| JP5696348B2 (ja) | 2008-08-09 | 2015-04-08 | 東京エレクトロン株式会社 | 金属回収方法、金属回収装置、排気系及びこれを用いた成膜装置 |
| US20110195202A1 (en) * | 2010-02-11 | 2011-08-11 | Applied Materials, Inc. | Oxygen pump purge to prevent reactive powder explosion |
| JP2012117127A (ja) * | 2010-12-02 | 2012-06-21 | Sumitomo Heavy Ind Ltd | 成膜装置、成膜基板製造方法、および成膜基板 |
| US10954594B2 (en) * | 2015-09-30 | 2021-03-23 | Applied Materials, Inc. | High temperature vapor delivery system and method |
| JP6602709B2 (ja) * | 2016-03-23 | 2019-11-06 | 大陽日酸株式会社 | 排ガス処理装置、及び排ガス処理方法 |
| JP6559618B2 (ja) * | 2016-06-23 | 2019-08-14 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置、およびプログラム |
| JP6828674B2 (ja) * | 2017-12-20 | 2021-02-10 | 株式会社Sumco | クリーニング方法、シリコン単結晶の製造方法、および、クリーニング装置 |
| US11236021B2 (en) * | 2017-12-22 | 2022-02-01 | Goodrich Corporation | Mitigating pyrophoric deposits in exhaust piping during SIC CVI/CVD processes by introducing water vapor into an outlet portion of a reaction chamber |
| KR102078584B1 (ko) * | 2017-12-28 | 2020-02-19 | (주) 엔피홀딩스 | 배기유체 처리장치 및 기판 처리 시스템 |
| KR102054411B1 (ko) * | 2017-12-28 | 2019-12-10 | (주) 엔피홀딩스 | 배기유체 처리장치 및 기판 처리 시스템 |
| JP7175782B2 (ja) * | 2019-01-25 | 2022-11-21 | 株式会社東芝 | ケイ素含有物質形成装置 |
| JP6900412B2 (ja) * | 2019-03-20 | 2021-07-07 | 株式会社Kokusai Electric | 基板処理装置及び半導体装置の製造方法及びプログラム |
| CN111013303A (zh) * | 2019-12-09 | 2020-04-17 | 木昇半导体科技(苏州)有限公司 | 氮化镓颗粒回收清扫真空系统 |
| KR102250066B1 (ko) * | 2020-02-17 | 2021-05-10 | 김홍석 | 반도체 및 에프피디의 공정챔버 배기관 내벽에 생성되는 불순물 감소 장치 |
| TWI783382B (zh) * | 2020-03-18 | 2022-11-11 | 日商國際電氣股份有限公司 | 基板處理裝置,排氣裝置及半導體裝置的製造方法 |
| KR20220091744A (ko) | 2020-12-24 | 2022-07-01 | 삼성전자주식회사 | 파우더 부산물 억제를 위해 흡착제를 포함하는 배기 가스 처리 시스템 |
| KR102800611B1 (ko) * | 2020-12-30 | 2025-04-29 | 세메스 주식회사 | 기판 처리 장치 및 이를 운용하는 방법 |
| KR102521535B1 (ko) * | 2021-09-02 | 2023-04-13 | 삼성전자주식회사 | 기판 처리 공정의 배출 물질 포집 장치 및 방법, 및 이 포집 장치를 포함하는 기판 처리 장치 |
| WO2024039512A1 (en) * | 2022-08-16 | 2024-02-22 | Kulicke And Soffa Industries, Inc. | Bonding systems for bonding a semiconductor element to a substrate, and related methods |
Family Cites Families (46)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4940213A (en) * | 1987-08-24 | 1990-07-10 | Kabushiki Kaisha Toshiba | Exhaust processing apparatus |
| TW241375B (enExample) * | 1993-07-26 | 1995-02-21 | Air Prod & Chem | |
| JP3287730B2 (ja) * | 1995-04-20 | 2002-06-04 | 東京エレクトロン株式会社 | 混入物の除去装置、これを用いた処理装置の真空排気系及びそのメンテナンス方法 |
| JPH09232296A (ja) * | 1996-02-23 | 1997-09-05 | Mitsubishi Electric Corp | 半導体装置の製造装置および製造方法 |
| US5895530A (en) * | 1996-02-26 | 1999-04-20 | Applied Materials, Inc. | Method and apparatus for directing fluid through a semiconductor processing chamber |
| JP3544604B2 (ja) * | 1996-12-16 | 2004-07-21 | 株式会社荏原製作所 | 切替式トラップ装置 |
| US5993916A (en) * | 1996-07-12 | 1999-11-30 | Applied Materials, Inc. | Method for substrate processing with improved throughput and yield |
| US5928426A (en) * | 1996-08-08 | 1999-07-27 | Novellus Systems, Inc. | Method and apparatus for treating exhaust gases from CVD, PECVD or plasma etch reactors |
| US5827370A (en) * | 1997-01-13 | 1998-10-27 | Mks Instruments, Inc. | Method and apparatus for reducing build-up of material on inner surface of tube downstream from a reaction furnace |
| US6673673B1 (en) * | 1997-04-22 | 2004-01-06 | Samsung Electronics Co., Ltd. | Method for manufacturing a semiconductor device having hemispherical grains |
| US6149729A (en) * | 1997-05-22 | 2000-11-21 | Tokyo Electron Limited | Film forming apparatus and method |
| US6099649A (en) * | 1997-12-23 | 2000-08-08 | Applied Materials, Inc. | Chemical vapor deposition hot-trap for unreacted precursor conversion and effluent removal |
| JP3567070B2 (ja) * | 1997-12-27 | 2004-09-15 | 東京エレクトロン株式会社 | 熱処理装置及び熱処理方法 |
| US20030101938A1 (en) * | 1998-10-27 | 2003-06-05 | Applied Materials, Inc. | Apparatus for the deposition of high dielectric constant films |
| US6383300B1 (en) * | 1998-11-27 | 2002-05-07 | Tokyo Electron Ltd. | Heat treatment apparatus and cleaning method of the same |
| US6238514B1 (en) * | 1999-02-18 | 2001-05-29 | Mks Instruments, Inc. | Apparatus and method for removing condensable aluminum vapor from aluminum etch effluent |
| JP2000256856A (ja) * | 1999-03-11 | 2000-09-19 | Tokyo Electron Ltd | 処理装置及び処理装置用真空排気システム及び減圧cvd装置及び減圧cvd装置用真空排気システム及びトラップ装置 |
| JP4487338B2 (ja) * | 1999-08-31 | 2010-06-23 | 東京エレクトロン株式会社 | 成膜処理装置及び成膜処理方法 |
| US6500487B1 (en) * | 1999-10-18 | 2002-12-31 | Advanced Technology Materials, Inc | Abatement of effluent from chemical vapor deposition processes using ligand exchange resistant metal-organic precursor solutions |
| US6773687B1 (en) * | 1999-11-24 | 2004-08-10 | Tokyo Electron Limited | Exhaust apparatus for process apparatus and method of removing impurity gas |
| JP4599701B2 (ja) * | 1999-11-24 | 2010-12-15 | 東京エレクトロン株式会社 | 成膜装置の排気系構造及び不純物ガスの除去方法 |
| JP4162366B2 (ja) * | 2000-03-31 | 2008-10-08 | 田中貴金属工業株式会社 | Cvd薄膜形成プロセス及びcvd薄膜製造装置 |
| JP2001293332A (ja) | 2000-04-11 | 2001-10-23 | Nippon Sanso Corp | Cvd排ガスの処理回収方法及び装置 |
| US6800254B1 (en) * | 2000-06-07 | 2004-10-05 | Tegal Corporation | Visual indicator cold trapping system |
| US6998097B1 (en) * | 2000-06-07 | 2006-02-14 | Tegal Corporation | High pressure chemical vapor trapping system |
| JP2002025909A (ja) * | 2000-06-30 | 2002-01-25 | Sony Corp | 成膜装置用除害装置及びこれを用いた成膜装置における除害方法 |
| US6844273B2 (en) * | 2001-02-07 | 2005-01-18 | Tokyo Electron Limited | Precleaning method of precleaning a silicon nitride film forming system |
| FR2825295B1 (fr) * | 2001-05-31 | 2004-05-28 | Air Liquide | Application des plasmas denses crees a pression atmospherique au traitement d'effluents gazeux |
| US7060234B2 (en) * | 2001-07-18 | 2006-06-13 | Applied Materials | Process and apparatus for abatement of by products generated from deposition processes and cleaning of deposition chambers |
| US6528420B1 (en) * | 2002-01-18 | 2003-03-04 | Chartered Semiconductor Manufacturing Ltd. | Double acting cold trap |
| JP4074461B2 (ja) * | 2002-02-06 | 2008-04-09 | 東京エレクトロン株式会社 | 成膜方法および成膜装置、半導体装置の製造方法 |
| JP2003245520A (ja) * | 2002-02-26 | 2003-09-02 | Seiko Epson Corp | Pfc分解方法、pfc分解装置及び半導体装置の製造方法 |
| KR100505670B1 (ko) * | 2003-02-05 | 2005-08-03 | 삼성전자주식회사 | 부산물 제거용 고온 유체 공급 장치를 구비한 반도체 소자제조 장치 |
| US20050161158A1 (en) * | 2003-12-23 | 2005-07-28 | Schumacher John C. | Exhaust conditioning system for semiconductor reactor |
| JP2005340283A (ja) * | 2004-05-24 | 2005-12-08 | Hitachi Kokusai Electric Inc | 基板処理装置 |
| US20060021571A1 (en) * | 2004-07-28 | 2006-02-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Vacuum pump line with nickel-chromium heater layer |
| TWI279260B (en) * | 2004-10-12 | 2007-04-21 | Applied Materials Inc | Endpoint detector and particle monitor |
| JP4236201B2 (ja) * | 2005-08-30 | 2009-03-11 | 富士通マイクロエレクトロニクス株式会社 | 半導体装置の製造方法 |
| JP5036354B2 (ja) * | 2006-04-04 | 2012-09-26 | 東京エレクトロン株式会社 | 成膜装置の排気系構造、成膜装置、および排ガスの処理方法 |
| JP2009016782A (ja) * | 2007-06-04 | 2009-01-22 | Tokyo Electron Ltd | 成膜方法及び成膜装置 |
| WO2009038168A1 (ja) * | 2007-09-21 | 2009-03-26 | Tokyo Electron Limited | 成膜装置および成膜方法 |
| JP5366235B2 (ja) * | 2008-01-28 | 2013-12-11 | 東京エレクトロン株式会社 | 半導体装置の製造方法、半導体製造装置及び記憶媒体 |
| JP5417754B2 (ja) * | 2008-07-11 | 2014-02-19 | 東京エレクトロン株式会社 | 成膜方法及び処理システム |
| JP2010212492A (ja) * | 2009-03-11 | 2010-09-24 | Tokyo Electron Ltd | 半導体装置の製造方法 |
| US8531033B2 (en) * | 2009-09-07 | 2013-09-10 | Advanced Interconnect Materials, Llc | Contact plug structure, semiconductor device, and method for forming contact plug |
| US9029264B2 (en) * | 2012-03-14 | 2015-05-12 | Applied Materials, Inc. | Methods for depositing a tin-containing layer on a substrate |
-
2007
- 2007-09-10 JP JP2007233533A patent/JP5133013B2/ja not_active Expired - Fee Related
-
2008
- 2008-09-01 KR KR1020127003984A patent/KR101209997B1/ko not_active Expired - Fee Related
- 2008-09-01 CN CN200880106461XA patent/CN101802256B/zh not_active Expired - Fee Related
- 2008-09-01 KR KR1020107005256A patent/KR101151513B1/ko not_active Expired - Fee Related
- 2008-09-01 WO PCT/JP2008/065661 patent/WO2009034865A1/ja not_active Ceased
- 2008-09-01 US US12/677,417 patent/US20110020544A1/en not_active Abandoned
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