JP2008530802A5 - - Google Patents

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JP2008530802A5
JP2008530802A5 JP2007555341A JP2007555341A JP2008530802A5 JP 2008530802 A5 JP2008530802 A5 JP 2008530802A5 JP 2007555341 A JP2007555341 A JP 2007555341A JP 2007555341 A JP2007555341 A JP 2007555341A JP 2008530802 A5 JP2008530802 A5 JP 2008530802A5
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transport layer
emitting device
light emitting
charge transport
semiconductor
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JP2007555341A
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JP2008530802A (ja
JP5528672B2 (ja
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Priority claimed from PCT/US2006/005184 external-priority patent/WO2006088877A1/en
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JP2007555341A 2005-02-16 2006-02-15 半導体ナノクリスタルを含む発光デバイス Active JP5528672B2 (ja)

Applications Claiming Priority (3)

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US65309405P 2005-02-16 2005-02-16
US60/653,094 2005-02-16
PCT/US2006/005184 WO2006088877A1 (en) 2005-02-16 2006-02-15 Light emitting device including semiconductor nanocrystals

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JP2011204274A Division JP5806895B2 (ja) 2005-02-16 2011-09-20 半導体ナノクリスタルを含む発光デバイス

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JP2008530802A JP2008530802A (ja) 2008-08-07
JP2008530802A5 true JP2008530802A5 (zh) 2013-03-14
JP5528672B2 JP5528672B2 (ja) 2014-06-25

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JP2011204274A Active JP5806895B2 (ja) 2005-02-16 2011-09-20 半導体ナノクリスタルを含む発光デバイス

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US (4) US8232722B2 (zh)
EP (2) EP1864341B1 (zh)
JP (2) JP5528672B2 (zh)
KR (2) KR20130007649A (zh)
CN (2) CN101213681A (zh)
MY (1) MY168191A (zh)
PL (1) PL2546192T3 (zh)
TW (1) TWI440206B (zh)
WO (1) WO2006088877A1 (zh)

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