JP2008530802A5 - - Google Patents

Download PDF

Info

Publication number
JP2008530802A5
JP2008530802A5 JP2007555341A JP2007555341A JP2008530802A5 JP 2008530802 A5 JP2008530802 A5 JP 2008530802A5 JP 2007555341 A JP2007555341 A JP 2007555341A JP 2007555341 A JP2007555341 A JP 2007555341A JP 2008530802 A5 JP2008530802 A5 JP 2008530802A5
Authority
JP
Japan
Prior art keywords
transport layer
emitting device
light emitting
charge transport
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2007555341A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008530802A (ja
JP5528672B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US2006/005184 external-priority patent/WO2006088877A1/en
Publication of JP2008530802A publication Critical patent/JP2008530802A/ja
Publication of JP2008530802A5 publication Critical patent/JP2008530802A5/ja
Application granted granted Critical
Publication of JP5528672B2 publication Critical patent/JP5528672B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

JP2007555341A 2005-02-16 2006-02-15 半導体ナノクリスタルを含む発光デバイス Expired - Lifetime JP5528672B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US65309405P 2005-02-16 2005-02-16
US60/653,094 2005-02-16
PCT/US2006/005184 WO2006088877A1 (en) 2005-02-16 2006-02-15 Light emitting device including semiconductor nanocrystals

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011204274A Division JP5806895B2 (ja) 2005-02-16 2011-09-20 半導体ナノクリスタルを含む発光デバイス

Publications (3)

Publication Number Publication Date
JP2008530802A JP2008530802A (ja) 2008-08-07
JP2008530802A5 true JP2008530802A5 (https=) 2013-03-14
JP5528672B2 JP5528672B2 (ja) 2014-06-25

Family

ID=36577480

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2007555341A Expired - Lifetime JP5528672B2 (ja) 2005-02-16 2006-02-15 半導体ナノクリスタルを含む発光デバイス
JP2011204274A Expired - Lifetime JP5806895B2 (ja) 2005-02-16 2011-09-20 半導体ナノクリスタルを含む発光デバイス

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2011204274A Expired - Lifetime JP5806895B2 (ja) 2005-02-16 2011-09-20 半導体ナノクリスタルを含む発光デバイス

Country Status (9)

Country Link
US (4) US8232722B2 (https=)
EP (2) EP1864341B1 (https=)
JP (2) JP5528672B2 (https=)
KR (2) KR20130007649A (https=)
CN (2) CN107507895B (https=)
MY (1) MY168191A (https=)
PL (1) PL2546192T3 (https=)
TW (1) TWI440206B (https=)
WO (1) WO2006088877A1 (https=)

Families Citing this family (131)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100360721C (zh) * 2001-04-04 2008-01-09 日矿金属株式会社 ZnTe系化合物半导体单晶的制造方法和ZnTe系化合物半导体单晶及半导体器件
US8007332B2 (en) * 2004-03-15 2011-08-30 Sharp Laboratories Of America, Inc. Fabrication of a semiconductor nanoparticle embedded insulating film electroluminescence device
US8349745B2 (en) * 2004-03-15 2013-01-08 Sharp Laboratory of America, Inc. Fabrication of a semiconductor nanoparticle embedded insulating film luminescence device
US10225906B2 (en) * 2004-10-22 2019-03-05 Massachusetts Institute Of Technology Light emitting device including semiconductor nanocrystals
US20090039764A1 (en) * 2005-03-17 2009-02-12 Cho Kyung Sang Quantum Dot Light-Emitting Diode Comprising Inorganic Electron Transport Layer
US9297092B2 (en) * 2005-06-05 2016-03-29 Qd Vision, Inc. Compositions, optical component, system including an optical component, devices, and other products
US8845927B2 (en) * 2006-06-02 2014-09-30 Qd Vision, Inc. Functionalized nanoparticles and method
US8718437B2 (en) 2006-03-07 2014-05-06 Qd Vision, Inc. Compositions, optical component, system including an optical component, devices, and other products
US7927948B2 (en) 2005-07-20 2011-04-19 Micron Technology, Inc. Devices with nanocrystals and methods of formation
US7989290B2 (en) 2005-08-04 2011-08-02 Micron Technology, Inc. Methods for forming rhodium-based charge traps and apparatus including rhodium-based charge traps
KR101304635B1 (ko) * 2006-01-09 2013-09-05 삼성전자주식회사 무기물 발광 다이오드 및 그의 제조방법
US8835941B2 (en) * 2006-02-09 2014-09-16 Qd Vision, Inc. Displays including semiconductor nanocrystals and methods of making same
WO2007095061A2 (en) * 2006-02-09 2007-08-23 Qd Vision, Inc. Device including semiconductor nanocrystals and a layer including a doped organic material and methods
EP1989725B1 (en) 2006-02-14 2019-06-05 Massachusetts Institute of Technology White light emitting devices
US9951438B2 (en) 2006-03-07 2018-04-24 Samsung Electronics Co., Ltd. Compositions, optical component, system including an optical component, devices, and other products
US8849087B2 (en) 2006-03-07 2014-09-30 Qd Vision, Inc. Compositions, optical component, system including an optical component, devices, and other products
WO2008070028A2 (en) * 2006-12-01 2008-06-12 Qd Vision, Inc. Improved composites and devices including nanoparticles
US9874674B2 (en) 2006-03-07 2018-01-23 Samsung Electronics Co., Ltd. Compositions, optical component, system including an optical component, devices, and other products
WO2007143197A2 (en) * 2006-06-02 2007-12-13 Qd Vision, Inc. Light-emitting devices and displays with improved performance
WO2007112088A2 (en) * 2006-03-24 2007-10-04 Qd Vision, Inc. Hyperspectral imaging device
WO2007117698A2 (en) * 2006-04-07 2007-10-18 Qd Vision, Inc. Composition including material, methods of depositing material, articles including same and systems for depositing material
WO2007120877A2 (en) * 2006-04-14 2007-10-25 Qd Vision, Inc. Transfer surface for manufacturing a light emitting device
US8941299B2 (en) * 2006-05-21 2015-01-27 Massachusetts Institute Of Technology Light emitting device including semiconductor nanocrystals
US9212056B2 (en) 2006-06-02 2015-12-15 Qd Vision, Inc. Nanoparticle including multi-functional ligand and method
WO2008105792A2 (en) * 2006-06-24 2008-09-04 Qd Vision, Inc. Methods for depositing nanomaterial, methods for fabricating a device, methods for fabricating an array of devices and compositions
WO2008111947A1 (en) 2006-06-24 2008-09-18 Qd Vision, Inc. Methods and articles including nanomaterial
WO2008108798A2 (en) * 2006-06-24 2008-09-12 Qd Vision, Inc. Methods for depositing nanomaterial, methods for fabricating a device, and methods for fabricating an array of devices
WO2008085210A2 (en) * 2006-09-12 2008-07-17 Qd Vision, Inc. Electroluminescent display useful for displaying a predetermined pattern
WO2008033388A2 (en) * 2006-09-12 2008-03-20 Qd Vision, Inc. A composite including nanoparticles, methods, and products including a composite
WO2008063658A2 (en) 2006-11-21 2008-05-29 Qd Vision, Inc. Semiconductor nanocrystals and compositions and devices including same
WO2008063652A1 (en) 2006-11-21 2008-05-29 Qd Vision, Inc. Blue emitting semiconductor nanocrystals and compositions and devices including same
WO2008133660A2 (en) 2006-11-21 2008-11-06 Qd Vision, Inc. Nanocrystals including a group iiia element and a group va element, method, composition, device and other prodcucts
WO2008063653A1 (en) 2006-11-21 2008-05-29 Qd Vision, Inc. Semiconductor nanocrystals and compositions and devices including same
WO2008121793A1 (en) * 2007-03-30 2008-10-09 The Penn State Research Foundation Mist fabrication of quantum dot devices
WO2008148031A2 (en) 2007-05-23 2008-12-04 University Of Florida Research Foundation, Inc Method and apparatus for light absorption and charged carrier transport
US10043993B2 (en) * 2007-06-25 2018-08-07 Massachusetts Institute Of Technology Electro-optical device
EP2165354B1 (en) * 2007-06-25 2018-05-30 Massachusetts Institute of Technology Photovoltaic device including semiconductor nanocrystals
KR101672553B1 (ko) 2007-06-25 2016-11-03 큐디 비젼, 인크. 조성물 및 나노물질의 침착을 포함하는 방법
WO2009002551A1 (en) * 2007-06-26 2008-12-31 Qd Vision, Inc. Photovoltaic devices including quantum dot down-conversion materials useful for solar cells and materials including quantum dots
US9136498B2 (en) * 2007-06-27 2015-09-15 Qd Vision, Inc. Apparatus and method for modulating photon output of a quantum dot light emitting device
WO2009014707A2 (en) 2007-07-23 2009-01-29 Qd Vision, Inc. Quantum dot light enhancement substrate and lighting device including same
WO2009057317A1 (ja) * 2007-11-01 2009-05-07 Panasonic Corporation 発光素子、及び、表示装置
US8304979B2 (en) * 2007-12-06 2012-11-06 Panasonic Corporation Light emitting device having inorganic luminescent particles in inorganic hole transport material
US20100283045A1 (en) * 2007-12-28 2010-11-11 Hideki Uchida Organic electroluminescent element
US20110079273A1 (en) * 2008-01-10 2011-04-07 Massachusetts Institute Of Technology Photovoltaic devices
WO2009099425A2 (en) * 2008-02-07 2009-08-13 Qd Vision, Inc. Flexible devices including semiconductor nanocrystals, arrays, and methods
WO2009103124A1 (en) * 2008-02-22 2009-08-27 The University Of Melbourne Semiconductor device including nanocrystals and methods of manufacturing the same
GB2458443A (en) * 2008-02-29 2009-09-23 Univ Dublin City Electroluminescent device
WO2011044391A1 (en) * 2009-10-07 2011-04-14 Qd Vision, Inc. Device including quantum dots
CN102047098B (zh) * 2008-04-03 2016-05-04 Qd视光有限公司 包括量子点的发光器件
US9525148B2 (en) 2008-04-03 2016-12-20 Qd Vision, Inc. Device including quantum dots
WO2009151515A1 (en) 2008-05-06 2009-12-17 Qd Vision, Inc. Solid state lighting devices including quantum confined semiconductor nanoparticles
US9207385B2 (en) 2008-05-06 2015-12-08 Qd Vision, Inc. Lighting systems and devices including same
WO2009137053A1 (en) 2008-05-06 2009-11-12 Qd Vision, Inc. Optical components, systems including an optical component, and devices
US8507040B2 (en) 2008-05-08 2013-08-13 Air Products And Chemicals, Inc. Binary and ternary metal chalcogenide materials and method of making and using same
US8765223B2 (en) * 2008-05-08 2014-07-01 Air Products And Chemicals, Inc. Binary and ternary metal chalcogenide materials and method of making and using same
US8030843B2 (en) * 2008-07-14 2011-10-04 Wisys Technology Foundation Quantum dot phosphors for solid-state lighting devices
JP2010103500A (ja) * 2008-09-26 2010-05-06 Toppan Printing Co Ltd 有機電界発光素子及びその製造方法、画像表示装置、照明装置
KR101652789B1 (ko) * 2009-02-23 2016-09-01 삼성전자주식회사 다중 양자점층을 가지는 양자점 발광소자
JP5710597B2 (ja) 2009-04-28 2015-04-30 キユーデイー・ビジヨン・インコーポレーテツド 光学材料、光学部品および方法
KR20120062773A (ko) 2009-08-14 2012-06-14 큐디 비젼, 인크. 조명 장치, 조명 장치용 광학 요소, 및 방법
US8120134B2 (en) 2009-10-15 2012-02-21 Micron Technology, Inc. High-performance diode device structure and materials used for the same
KR101924080B1 (ko) 2009-11-11 2018-11-30 삼성 리서치 아메리카 인코포레이티드 양자점을 포함하는 디바이스
US9011818B2 (en) * 2009-11-30 2015-04-21 Massachusetts Institute Of Technology Materials and methods for biological imaging
GB201012483D0 (en) * 2010-07-26 2010-09-08 Seren Photonics Ltd Light emitting diodes
CN103283044A (zh) 2010-09-09 2013-09-04 法国电力公司 包括六边形晶体的纳米结构的光电器件
WO2012071107A1 (en) * 2010-11-23 2012-05-31 Qd Vision, Inc. Device including semiconductor nanocrystals & method
WO2012134629A1 (en) 2011-04-01 2012-10-04 Qd Vision, Inc. Quantum dots, method, and devices
WO2012138410A1 (en) * 2011-04-02 2012-10-11 Qd Vision, Inc. Device including quantum dots
WO2013019299A2 (en) 2011-05-11 2013-02-07 Qd Vision, Inc. Method for processing devices including quantum dots and devices
WO2012158252A1 (en) 2011-05-16 2012-11-22 Qd Vision, Inc. Device including quantum dots and method for making same
WO2012158832A2 (en) 2011-05-16 2012-11-22 Qd Vision, Inc. Method for preparing semiconductor nanocrystals
WO2013028253A1 (en) 2011-08-19 2013-02-28 Qd Vision, Inc. Semiconductor nanocrystals and methods
US9330911B2 (en) * 2011-08-22 2016-05-03 Invenlux Limited Light emitting device having group III-nitride current spreading layer doped with transition metal or comprising transition metal nitride
CN104185907B (zh) * 2011-09-21 2017-11-24 Ev集团E·索尔纳有限责任公司 制造多色化层用的方法和衬底以及带有多色化层的发光二极管
WO2013085611A1 (en) 2011-12-08 2013-06-13 Qd Vision, Inc. Solution-processed sol-gel films, devices including same, and methods
KR20130070892A (ko) * 2011-12-20 2013-06-28 한국전자통신연구원 광 검출기 소자
WO2013103440A1 (en) 2012-01-06 2013-07-11 Qd Vision, Inc. Light emitting device including blue emitting quantum dots and method
CN103311442A (zh) * 2012-03-06 2013-09-18 海洋王照明科技股份有限公司 电致发光器件及其制备方法
CN102610725B (zh) * 2012-03-29 2015-01-07 华北电力大学 一种半导体量子点发光二极管及其制备方法
US9929325B2 (en) 2012-06-05 2018-03-27 Samsung Electronics Co., Ltd. Lighting device including quantum dots
CN102820391B (zh) * 2012-08-27 2014-12-03 中国科学院半导体研究所 硅基上的近红外量子点电致发光的器件及制备方法
US8969856B2 (en) 2012-08-29 2015-03-03 General Electric Company OLED devices with internal outcoupling
KR20140032811A (ko) * 2012-09-07 2014-03-17 삼성전자주식회사 백라이트 유닛 및 이를 구비한 액정 디스플레이 장치
WO2014088667A2 (en) 2012-09-14 2014-06-12 Qd Vision, Inc. Light emitting device including tandem structure
WO2014085469A1 (en) * 2012-11-27 2014-06-05 Massachusetts Institute Of Technology Deposition of semiconductor nanocrystals for light emitting devices
WO2014093322A1 (en) * 2012-12-10 2014-06-19 Massachusetts Institute Of Technology Near-infrared light emitting device using semiconductor nanocrystals
US8941111B2 (en) 2012-12-21 2015-01-27 Invensas Corporation Non-crystalline inorganic light emitting diode
CN103117361A (zh) * 2013-02-28 2013-05-22 中国科学院合肥物质科学研究院 基于氧化镍阳极界面层的有机半导体薄膜太阳能电池的制备方法
KR102100370B1 (ko) * 2013-04-26 2020-04-14 삼성디스플레이 주식회사 나노 결정 형성 방법 및 나노 결정의 형성된 박막을 포함한 유기 발광 표시 장치의 제조 방법
US9574135B2 (en) * 2013-08-22 2017-02-21 Nanoco Technologies Ltd. Gas phase enhancement of emission color quality in solid state LEDs
WO2015031835A1 (en) * 2013-08-29 2015-03-05 University Of Florida Research Foundation, Inc. Air stable infrared photodetectors from solution-processed inorganic semiconductors
CN105960700B (zh) * 2014-02-17 2020-11-20 三菱瓦斯化学株式会社 包含铟、锌、锡及氧的氧化物的蚀刻用液体组合物及蚀刻方法
CN105206757B (zh) * 2015-11-05 2016-09-07 京东方科技集团股份有限公司 有机发光二极管及其制作方法、显示基板和显示装置
KR102447310B1 (ko) * 2015-12-28 2022-09-26 삼성디스플레이 주식회사 유기 발광 소자 및 이를 포함하는 유기 발광 표시 장치
KR101717623B1 (ko) * 2016-03-17 2017-03-17 연세대학교 산학협력단 초박막 다성분계 이종접합 소재를 이용한 초고속 led 소자
JP2017182892A (ja) 2016-03-28 2017-10-05 セイコーエプソン株式会社 発光素子、発光装置、及び電子機器
US9956055B2 (en) * 2016-05-17 2018-05-01 Eli Halpert Marking device with metallic element for use in X-ray guided surgery
JP2018014396A (ja) * 2016-07-20 2018-01-25 ソニーセミコンダクタソリューションズ株式会社 光電変換素子および固体撮像装置
DK3516710T3 (da) * 2016-09-20 2023-07-24 Inuru Gmbh Diffusionsbegrænsende elektroaktivt barrierelag til en optoelektronisk komponent
CN106450013B (zh) * 2016-10-11 2019-11-26 Tcl集团股份有限公司 Qled器件
US10021761B2 (en) * 2016-10-21 2018-07-10 AhuraTech LLC System and method for producing light in a liquid media
US10532927B2 (en) * 2017-01-09 2020-01-14 Alliance For Sustainable Energy, Llc Graded catalytic-protective layer for an efficient and stable water-splitting photocathode
US10593902B2 (en) 2017-09-29 2020-03-17 University Of Central Florida Research Foundation, Inc. Quantum dot light emitting devices (QLEDs) and method of manufacture
WO2019078235A1 (ja) * 2017-10-19 2019-04-25 Ｎｓマテリアルズ株式会社 発光素子、及び照明装置
WO2019159236A1 (ja) 2018-02-13 2019-08-22 シャープ株式会社 発光素子、発光デバイス、発光素子の製造装置
WO2019159216A1 (ja) 2018-02-13 2019-08-22 シャープ株式会社 発光デバイス
WO2019187064A1 (ja) 2018-03-30 2019-10-03 シャープ株式会社 発光素子、発光デバイス、発光素子の製造装置
US11121339B2 (en) * 2018-05-11 2021-09-14 Nanosys, Inc. Quantum dot LED design based on resonant energy transfer
US10851298B2 (en) 2018-08-30 2020-12-01 Samsung Electronics Co., Ltd. Electronic device including quantum dots
WO2020065944A1 (ja) 2018-09-28 2020-04-02 シャープ株式会社 発光デバイス、発光デバイスの製造方法
CN110970534A (zh) * 2018-09-29 2020-04-07 Tcl集团股份有限公司 一种氧化镍薄膜及其制备方法、量子点发光二极管
CN113196880B (zh) * 2018-12-10 2024-09-17 夏普株式会社 发光元件、发光设备
US11996501B2 (en) * 2019-02-20 2024-05-28 Sharp Kabushiki Kaisha Method for manufacturing light-emitting device
CN113647199B (zh) * 2019-04-12 2024-04-05 夏普株式会社 发光元件的制造方法
CN110102457A (zh) * 2019-04-19 2019-08-09 东北大学秦皇岛分校 一种在低温下制备氧化镍纳米晶电致变色薄膜的方法
US12193250B2 (en) 2019-05-31 2025-01-07 Sharp Kabushiki Kaisha Light emitting element and display device including an electron transport layer containing at least one of RH and IR
WO2020261347A1 (ja) 2019-06-24 2020-12-30 シャープ株式会社 発光素子
WO2021033257A1 (ja) * 2019-08-20 2021-02-25 シャープ株式会社 発光素子および発光デバイス
US12289944B2 (en) 2019-09-02 2025-04-29 Sharp Kabushiki Kaisha Light-emitting element and display device
US12284860B2 (en) 2019-09-19 2025-04-22 Sharp Kabushiki Kaisha Light-emitting element having a p-type hole transport layer with n-type nanoparticles dispersed therein and a display device thereof
WO2021064822A1 (ja) 2019-09-30 2021-04-08 シャープ株式会社 発光素子、発光デバイス
WO2021144892A1 (ja) 2020-01-15 2021-07-22 シャープ株式会社 発光素子、発光デバイス
CN113611805B (zh) * 2020-08-14 2022-12-27 广东聚华印刷显示技术有限公司 发光器件及其制备方法和发光装置
JP7162647B2 (ja) * 2020-09-15 2022-10-28 Ｊｘ金属株式会社 Ｃｕ－Ｗ－Ｏスパッタリングターゲット及び酸化物薄膜
KR102914549B1 (ko) 2020-10-15 2026-01-20 삼성디스플레이 주식회사 표시 장치 및 이의 제조 방법
CN112103397A (zh) * 2020-10-16 2020-12-18 京东方科技集团股份有限公司 量子点发光二极管及其制备方法、显示面板和显示装置
CN113140681B (zh) * 2021-03-03 2022-03-18 重庆文理学院 一种含氧化铁界面层的有机光伏器件及其制备方法
CN113809253A (zh) * 2021-09-06 2021-12-17 深圳市华星光电半导体显示技术有限公司 有机电致发光器件及其制备方法
WO2024201993A1 (ja) * 2023-03-31 2024-10-03 シャープディスプレイテクノロジー株式会社 発光素子、表示装置、および発光素子の製造方法
WO2025262739A1 (ja) * 2024-06-17 2025-12-26 シャープディスプレイテクノロジー株式会社 発光素子、表示装置、発光素子の製造方法

Family Cites Families (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3216305A (en) 1964-04-23 1965-11-09 Kaplan Stanley Hammerable anchor bolt with deformable serrated apertures
JP2895868B2 (ja) * 1989-08-21 1999-05-24 出光興産株式会社 有機エレクトロルミネッセンス素子
US5262357A (en) * 1991-11-22 1993-11-16 The Regents Of The University Of California Low temperature thin films formed from nanocrystal precursors
US6180239B1 (en) 1993-10-04 2001-01-30 President And Fellows Of Harvard College Microcontact printing on surfaces and derivative articles
US5512131A (en) 1993-10-04 1996-04-30 President And Fellows Of Harvard College Formation of microstamped patterns on surfaces and derivative articles
US5537000A (en) * 1994-04-29 1996-07-16 The Regents, University Of California Electroluminescent devices formed using semiconductor nanocrystals as an electron transport media and method of making such electroluminescent devices
US6518168B1 (en) 1995-08-18 2003-02-11 President And Fellows Of Harvard College Self-assembled monolayer directed patterning of surfaces
DE69710787T2 (de) * 1996-05-22 2002-11-21 Moltech Corp., Tucson Komposit-kathoden, elektrochemische zellen mit komposit-kathoden und verfahren zur herstellung
JP4071360B2 (ja) * 1997-08-29 2008-04-02 株式会社東芝 半導体装置
US6459331B1 (en) * 1997-09-02 2002-10-01 Kabushiki Kaisha Toshiba Noise suppression circuit, ASIC, navigation apparatus communication circuit, and communication apparatus having the same
US6322901B1 (en) 1997-11-13 2001-11-27 Massachusetts Institute Of Technology Highly luminescent color-selective nano-crystalline materials
US6251303B1 (en) 1998-09-18 2001-06-26 Massachusetts Institute Of Technology Water-soluble fluorescent nanocrystals
JP2001043973A (ja) * 1999-07-29 2001-02-16 Matsushita Electric Ind Co Ltd 有機発光素子及びその製造方法
JP2000268971A (ja) * 1999-03-16 2000-09-29 Tdk Corp 有機ｅｌ素子
JP2000340366A (ja) * 1999-05-27 2000-12-08 Tdk Corp 発光ダイオード
US6797412B1 (en) 2000-04-11 2004-09-28 University Of Connecticut Full color display structures using pseudomorphic cladded quantum dot nanophosphor thin films
US20010052752A1 (en) * 2000-04-25 2001-12-20 Ghosh Amalkumar P. Thin film encapsulation of organic light emitting diode devices
US20020121638A1 (en) * 2000-06-30 2002-09-05 Vladimir Grushin Electroluminescent iridium compounds with fluorinated phenylpyridines, phenylpyrimidines, and phenylquinolines and devices made with such compounds
EP1307919A4 (en) * 2000-07-12 2009-04-15 California Inst Of Techn ELECTRICAL PASSIVATION OF SILIC-SIZED SURFACES USING ORGANIC LAYERS
US6576291B2 (en) * 2000-12-08 2003-06-10 Massachusetts Institute Of Technology Preparation of nanocrystallites
US6518117B2 (en) * 2001-03-29 2003-02-11 Micron Technology, Inc. Methods of forming nitrogen-containing masses, silicon nitride layers, and capacitor constructions
US8058797B2 (en) * 2001-05-18 2011-11-15 Cambridge University Technical Services Limited Electroluminescent device
US6773949B2 (en) * 2001-07-31 2004-08-10 The Board Of Trustees Of The University Of Illinois Semiconductor devices and methods
WO2003021694A2 (en) 2001-09-04 2003-03-13 Koninklijke Philips Electronics N.V. Electroluminescent device comprising quantum dots
US6632694B2 (en) * 2001-10-17 2003-10-14 Astralux, Inc. Double heterojunction light emitting diodes and laser diodes having quantum dot silicon light emitters
JPWO2003037836A1 (ja) * 2001-10-31 2005-02-17 出光興産株式会社 新規可溶性化合物及び有機エレクトロルミネッセンス素子
JP2003217861A (ja) * 2002-01-22 2003-07-31 Matsushita Electric Ind Co Ltd 電界発光素子
US7700200B2 (en) 2002-03-29 2010-04-20 Massachusetts Institute Of Technology Light emitting device including semiconductor nanocrystals
US7332211B1 (en) 2002-11-07 2008-02-19 Massachusetts Institute Of Technology Layered materials including nanoparticles
TWI265750B (en) * 2003-02-27 2006-11-01 Toyota Jidoshokki Kk Organic electro-luminescence devices
JP2004296950A (ja) 2003-03-27 2004-10-21 Quantum 14:Kk 発光素子と発光装置並びに情報ディスプレイ装置
JP2004303592A (ja) * 2003-03-31 2004-10-28 Mitsubishi Chemicals Corp 電界発光素子及び電界発光素子の製造方法
JP2005038634A (ja) * 2003-07-16 2005-02-10 Matsushita Electric Ind Co Ltd 電流注入型発光素子
US7605534B2 (en) * 2003-12-02 2009-10-20 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element having metal oxide and light-emitting device using the same
KR100708644B1 (ko) * 2004-02-26 2007-04-17 삼성에스디아이 주식회사 박막 트랜지스터, 이를 구비한 평판 표시장치, 박막트랜지스터의 제조방법, 평판 표시장치의 제조방법, 및도너 시트의 제조방법
US7253452B2 (en) * 2004-03-08 2007-08-07 Massachusetts Institute Of Technology Blue light emitting semiconductor nanocrystal materials
WO2005094271A2 (en) * 2004-03-25 2005-10-13 The Regents Of The University Of California Colloidal quantum dot light emitting diodes
KR100632632B1 (ko) * 2004-05-28 2006-10-12 삼성전자주식회사 나노 결정의 다층 박막 제조 방법 및 이를 이용한유·무기 하이브리드 전기 발광 소자
US10225906B2 (en) * 2004-10-22 2019-03-05 Massachusetts Institute Of Technology Light emitting device including semiconductor nanocrystals
US8134175B2 (en) * 2005-01-11 2012-03-13 Massachusetts Institute Of Technology Nanocrystals including III-V semiconductors
US20090039764A1 (en) * 2005-03-17 2009-02-12 Cho Kyung Sang Quantum Dot Light-Emitting Diode Comprising Inorganic Electron Transport Layer
US20070001581A1 (en) * 2005-06-29 2007-01-04 Stasiak James W Nanostructure based light emitting devices and associated methods
US7615800B2 (en) * 2005-09-14 2009-11-10 Eastman Kodak Company Quantum dot light emitting layer
KR101304635B1 (ko) * 2006-01-09 2013-09-05 삼성전자주식회사 무기물 발광 다이오드 및 그의 제조방법
KR100789559B1 (ko) * 2006-12-20 2007-12-28 삼성전자주식회사 절연층을 포함하는 무기 전계발광 소자, 그의 제조방법 및이를 포함하는 전자소자

Similar Documents

Publication Publication Date Title
JP2008530802A5 (https=)
US9081460B2 (en) Electronic device, method for manufacturing the same and touch panel including the same
CN103000813B (zh) 发光二极管及其制备方法
CN105679806B (zh) 柔性显示基板及其母板、制备方法、柔性显示面板及其母板
CN105453292B (zh) 光电子器件基板以及包括该光电子器件基板的光电子器件
US20240415002A1 (en) Materials for forming a nucleation-inhibiting coating and devices incorporating same
CN108886101A (zh) 量子点发光二极管及其制造方法、显示面板和显示装置
CN101908489A (zh) 氧化物薄膜晶体管的制造方法
CN104157675A (zh) 一种oled显示器件及其制作方法、显示装置
KR101654360B1 (ko) 유기 발광소자용 기판 및 그 제조방법
CN108807720A (zh) 功能化阴极、qled及制备方法、发光模组与显示装置
WO2008097365A3 (en) Photoconductive devices with enhanced efficiency from group iv nanoparticle materials and methods thereof
CN109119450A (zh) 显示基板及其制作方法、显示面板、显示装置
CN103594528B (zh) 金属氧化物薄膜基板、其制造方法、光伏电池和oled
US20240097078A1 (en) uLED LIGHT-EMITTING AND DISPLAY DEVICE WITHOUT ELECTRICAL CONTACT, EXTERNAL CARRIER INJECTION AND MASS TRANSFER AND PREPARATION METHOD THEREOF
KR20080074548A (ko) 양자점 발광 소자 및 이의 제조 방법
CN110335960B (zh) Oled显示面板及其制备方法、显示装置
Lee et al. Large‐Scale Highly Aligned Nanowire Printing
Hussain et al. Engineering architecture of quantum dot-based light-emitting diode for high device performance with double-sided emission fabricated by nonvacuum technique
CN205194746U (zh) 有机发光二极管器件及具有其的显示面板
Choi et al. Ag fiber/IZO composite electrodes: Improved chemical and thermal stability and uniform light emission in flexible organic light-emitting diodes
Xu et al. Improved efficiency of all-inorganic quantum-dot light-emitting diodes via interface engineering
Sun et al. Large-area tunable red/green/blue tri-stacked quantum dot light-emitting diode using sandwich-structured transparent silver nanowires electrodes
CN104157698A (zh) 一种薄膜晶体管及其制作方法
CN104157674A (zh) 具触摸功能的有机发光显示器件及其制作方法、显示装置