JP2008518401A - 半導体ナノクリスタルを含む発光デバイス - Google Patents
半導体ナノクリスタルを含む発光デバイス Download PDFInfo
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- JP2008518401A JP2008518401A JP2007538032A JP2007538032A JP2008518401A JP 2008518401 A JP2008518401 A JP 2008518401A JP 2007538032 A JP2007538032 A JP 2007538032A JP 2007538032 A JP2007538032 A JP 2007538032A JP 2008518401 A JP2008518401 A JP 2008518401A
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- 125000002485 formyl group Chemical group [H]C(*)=O 0.000 description 1
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- 125000001475 halogen functional group Chemical group 0.000 description 1
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- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
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- 125000000592 heterocycloalkyl group Chemical group 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
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- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 125000002768 hydroxyalkyl group Chemical group 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
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- HRHKULZDDYWVBE-UHFFFAOYSA-N indium;oxozinc;tin Chemical compound [In].[Sn].[Zn]=O HRHKULZDDYWVBE-UHFFFAOYSA-N 0.000 description 1
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- SJCKRGFTWFGHGZ-UHFFFAOYSA-N magnesium silver Chemical compound [Mg].[Ag] SJCKRGFTWFGHGZ-UHFFFAOYSA-N 0.000 description 1
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- 125000001624 naphthyl group Chemical group 0.000 description 1
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 1
- 125000006501 nitrophenyl group Chemical group 0.000 description 1
- 230000010494 opalescence Effects 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000013110 organic ligand Substances 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- WCPAKWJPBJAGKN-UHFFFAOYSA-N oxadiazole Chemical compound C1=CON=N1 WCPAKWJPBJAGKN-UHFFFAOYSA-N 0.000 description 1
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- 238000007254 oxidation reaction Methods 0.000 description 1
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- 125000005561 phenanthryl group Chemical group 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 235000021317 phosphate Nutrition 0.000 description 1
- 150000003003 phosphines Chemical class 0.000 description 1
- 150000003013 phosphoric acid derivatives Chemical class 0.000 description 1
- 239000011574 phosphorus Chemical group 0.000 description 1
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- 238000005424 photoluminescence Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 238000000634 powder X-ray diffraction Methods 0.000 description 1
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- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
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- 229910052711 selenium Inorganic materials 0.000 description 1
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- 239000006228 supernatant Substances 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical group [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 150000003573 thiols Chemical class 0.000 description 1
- 125000003944 tolyl group Chemical group 0.000 description 1
- 238000004627 transmission electron microscopy Methods 0.000 description 1
- 150000003852 triazoles Chemical class 0.000 description 1
- TUQOTMZNTHZOKS-UHFFFAOYSA-N tributylphosphine Chemical compound CCCCP(CCCC)CCCC TUQOTMZNTHZOKS-UHFFFAOYSA-N 0.000 description 1
- FKIZDWBGWFWWOV-UHFFFAOYSA-N trimethyl(trimethylsilylselanyl)silane Chemical compound C[Si](C)(C)[Se][Si](C)(C)C FKIZDWBGWFWWOV-UHFFFAOYSA-N 0.000 description 1
- VMDCDZDSJKQVBK-UHFFFAOYSA-N trimethyl(trimethylsilyltellanyl)silane Chemical compound C[Si](C)(C)[Te][Si](C)(C)C VMDCDZDSJKQVBK-UHFFFAOYSA-N 0.000 description 1
- ZAKSIRCIOXDVPT-UHFFFAOYSA-N trioctyl(selanylidene)-$l^{5}-phosphane Chemical compound CCCCCCCCP(=[Se])(CCCCCCCC)CCCCCCCC ZAKSIRCIOXDVPT-UHFFFAOYSA-N 0.000 description 1
- PIOZWDBMINZWGJ-UHFFFAOYSA-N trioctyl(sulfanylidene)-$l^{5}-phosphane Chemical compound CCCCCCCCP(=S)(CCCCCCCC)CCCCCCCC PIOZWDBMINZWGJ-UHFFFAOYSA-N 0.000 description 1
- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical compound OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
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- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
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- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/0057—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material where an intermediate transfer member receives the ink before transferring it on the printing material
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
- B41M1/00—Inking and printing with a printer's forme
- B41M1/02—Letterpress printing, e.g. book printing
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
- B41M3/00—Printing processes to produce particular kinds of printed work, e.g. patterns
- B41M3/003—Printing processes to produce particular kinds of printed work, e.g. patterns on optical devices, e.g. lens elements; for the production of optical devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
- B41M5/00—Duplicating or marking methods; Sheet materials for use therein
- B41M5/025—Duplicating or marking methods; Sheet materials for use therein by transferring ink from the master sheet
- B41M5/0256—Duplicating or marking methods; Sheet materials for use therein by transferring ink from the master sheet the transferable ink pattern being obtained by means of a computer driven printer, e.g. an ink jet or laser printer, or by electrographic means
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
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- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
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- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
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- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
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- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
- H05B33/145—Arrangements of the electroluminescent material
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
Abstract
【選択図】 なし
Description
本出願は、2004年10月22日出願の米国仮特許出願第60/620,967号、及び2004年11月22日出願の米国仮特許出願第60/629,579号に対する優先権を主張するものである。各仮特許出願の全体を引用により取り込む。
本発明は、半導体ナノクリスタルを含む発光デバイスに関するものである。
(連邦政府による資金提供を受けた開発研究)
米国政府は、全米科学財団(National Science Foundation)からのGrant No. DMR-9808941に従って、本発明において特定の権利を有することがある。
発光デバイスは、例えば、ディスプレイ(例えば、フラットパネルディスプレイ)、スクリーン(例えば、コンピュータスクリーン)、及び照明を必要とする他の物品で使用され得る。したがって、発光デバイスの輝度は、デバイスの一つの重要な特徴である。また、低い動作電圧及び高い効率は、発光デバイスの望ましい特徴となり得る。
一般に、発光デバイスは、複数の半導体ナノクリスタルを含むことができる。半導体ナノクリスタルは、典型的には有機配位子の層で修飾された、ナノメートルスケール無機半導体粒子である。これらのゼロ次元半導体構造は、強い量子閉じ込め効果を示し、この効果は、ナノクリスタルのサイズ及び組成で調整可能な電子的及び光学的特性を有する複合へテロ構造を作り出すボトムアップ化学的手法を設計する際に利用され得る。
基板は、電極の上に正孔輸送物質を含む層を含むことができる。該方法は、ナノ物質の上に電子輸送物質を含む層を形成するステップを含むことができる。第二電極は、電子輸送物質を含む層の上に塗布され得る。
事前定義領域は、パターンを形成することができる。デバイスは、半導体ナノクリスタルの第二単層を含む第二事前定義領域を含むことができる。半導体ナノクリスタルの第一単層が、第二単層の発光波長とは異なる発光波長を有することができる。
発光デバイスは、10ミリメートル未満、1ミリメートル未満、又は100マイクロメートル未満の寸法を有することができる。ディスプレイは、バックプレーンを含むことができ、バックプレーンは、アクティブマトリックス又はパッシブマトリックス電子回路を含むことができる。
本発明の他の特徴、目的、及び利点は、説明及び図面から、且つ特許請求の範囲から明らかになろう。
発光デバイスは、デバイスの二つの電極を分離する二つの(又はそれよりも多い)層を含むことができる。一方の層の物質は、物質が正孔を輸送できる能力に基づいて選択することができ、即ち正孔輸送層(HTL)にすることができる。他方の層の物質は、物質が電子を輸送できる能力に基づいて選択することができ、即ち電子輸送層(ETL)にすることができる。通常、電子輸送層は、エレクトロルミネッセンス層を含む。電圧が印加されるとき、一方の電極は、正孔(正電荷キャリア)を正孔輸送層に注入し、他方の電極は、電子を電子輸送層に注入する。注入された正孔及び電子はそれぞれ、逆に荷電された電極に向かって移動する。電子及び正孔が同一分子に局在するとき、励起子が形成され、励起子は、再結合して光を放射することができる。
適切な配位子を、商業的に購入することができ、又は、例えばAdvanced Organic Chemistry, J. March(その全体を引用により取り込む)に記載されている通常の合成有機技法によって調製することができる。
より大きな色飽和は、CBPの使用と共にここで利用可能な、より大きなダウンヒルエネルギー移動プロセス(downhill energy transfer process)に起因させることができ、これは、有機発光の強度の減少、及び半導体ナノクリスタル発光の強度の増加をもたらし、半導体ナノクリスタルELと有機ELとの間でのより大きな比率をもたらす。
他の実施態様は、添付の特許請求の範囲の範囲内にある。
Claims (58)
- アプリケータの表面上にナノ物質を付置するステップと、
前記アプリケータの前記表面を、第一電極を含む基板に接触させ、それにより前記ナノ物質の少なくとも一部を前記基板に転写するステップと、
前記第一電極に向かい合わせて第二電極を配置するステップと
を含む、デバイス形成方法。 - 前記アプリケータの前記表面が、隆起部又は窪み部を含むパターンを含む、請求項1記載の方法。
- 前記ナノ物質が、複数の半導体ナノクリスタルを含む、請求項1記載の方法。
- 前記複数の半導体ナノクリスタルが、前記基板上に層を形成する、請求項3記載の方法。
- 前記層が、半導体ナノクリスタルの多層である、請求項4記載の方法。
- 前記層が、半導体ナノクリスタルの単層である、請求項4記載の方法。
- 前記層が、半導体ナノクリスタルの部分単層である、請求項4記載の方法。
- 前記ナノ物質が、前記基板上に層を形成する、請求項1記載の方法。
- 前記層が、前記ナノ物質の多層である、請求項8記載の方法。
- 前記層が、前記ナノ物質の単層である、請求項8記載の方法。
- 前記層が、前記ナノ物質の部分単層である、請求項8記載の方法。
- 前記ナノ物質が、前記基板上にパターンを形成する、請求項1記載の方法。
- さらに、前記アプリケータの前記表面上に前記ナノ物質を付置する前に、前記アプリケータの前記表面を改質するステップを含む、請求項1記載の方法。
- 前記アプリケータの前記表面を改質するステップが、前記アプリケータの前記表面を、基板との接触時に前記アプリケータから前記ナノ物質の少なくとも一部を解放するように選択される組成物と接触させるステップを含む、請求項13記載の方法。
- 前記組成物が、芳香族有機ポリマーを含む、請求項14記載の方法。
- さらに、第二アプリケータの表面上に第二ナノ物質を付置するステップと、
前記第二アプリケータの前記表面を前記基板に接触させ、それにより前記ナノ物質の少なくとも一部を前記基板に転写するステップと
を含む、請求項1記載の方法。 - 前記第一ナノ物質と前記第二ナノ物質とが、それぞれ独立して、複数の半導体ナノクリスタルを含む、請求項16記載の方法。
- 前記第一の複数の半導体ナノクリスタルが、前記第二の複数の半導体ナノクリスタルから区別可能な発光波長を有する、請求項17記載の方法。
- さらに、第三アプリケータの表面上に第三の複数の半導体ナノクリスタルを付置するステップと、
前記第三のアプリケータの前記表面を前記基板に接触させ、それにより前記第三の複数の半導体ナノクリスタルの少なくとも一部を前記基板に転写するステップと
を含む、請求項18記載の方法。 - 前記第三の複数の半導体ナノクリスタルが、前記第一の複数の半導体ナノクリスタルから区別可能であり、且つ前記第二の複数の半導体ナノクリスタルから区別可能である発光波長を有する、請求項19記載の方法。
- 前記第一、第二、及び第三の複数の半導体ナノクリスタルが、前記基板の重なり合わない事前定義領域内に塗布される、請求項20記載の方法。
- 前記第一、第二、及び第三の複数の半導体ナノクリスタルの発光波長が、紫外、青色、緑色、黄色、赤色、又は赤外発光波長、或いはそれらの組合せから選択される、請求項21記載の方法。
- 前記パターンのフィーチャが、10ミリメートル未満の寸法を有する、請求項2記載の方法。
- 前記パターンのフィーチャが、1ミリメートル未満の寸法を有する、請求項2記載の方法。
- 前記パターンのフィーチャが、100マイクロメートル未満の寸法を有する、請求項2記載の方法。
- 前記パターンのフィーチャが、1マイクロメートル未満の寸法を有する、請求項2記載の方法。
- 前記パターンのフィーチャが、少なくとも1センチメートルの寸法を有する、請求項2記載の方法。
- 前記パターンのフィーチャが、少なくとも10センチメートルの寸法を有する、請求項2記載の方法。
- 前記パターンのフィーチャが、少なくとも100センチメートルの寸法を有する、請求項2記載の方法。
- 前記基板が、前記第一電極の上に正孔輸送物質を含む層を含む、請求項1記載の方法。
- さらに、前記ナノ物質の上に電子輸送物質を含む層を形成するステップを含む、請求項30記載の方法。
- 前記第二電極が、前記電子輸送物質を含む前記層の上に塗布される、請求項31記載の方法。
- 前記アプリケータの表面上に前記ナノ物質を付置するステップが、スピンコーティング、ブレードコーティング、スロットコーティング、浸漬コーティング、スプレーコーティング、ロッドコーティング、リバースロールコーティング、正転ロールコーティング、エアナイフコーティング、ナイフオーバーロールコーティング、グラビア印刷、マイクログラビア印刷、押出しコーティング、スライドコーティング、カーテンコーティング、又はそれらの組合せを含む、請求項1記載の方法。
- 前記アプリケータの前記表面が、隆起部と窪み部とを実質的に有しない、請求項1記載の方法。
- アプリケータが、回転可能なドラムに取り付けられている、請求項34記載の方法。
- 第一電極と、
前記第一電極に向かい合わされた第二電極と、
前記第一電極と前記第二電極との間に配置された半導体ナノクリスタルの単層を含む事前定義領域と
を含む、発光デバイス。 - 前記事前定義領域がパターンを成す、請求項36記載のデバイス。
- さらに、半導体ナノクリスタルの第二単層を含む第二事前定義領域を含む、請求項36記載のデバイス。
- さらに、前記第一電極に近接し、かつ前記第一電極と前記第二電極との間に配置された正孔輸送物質を含む層を含む、請求項36記載のデバイス。
- さらに、前記第二電極に近接し、かつ前記第一電極と前記第二電極との間に配置された電子輸送物質を含む層を含む、請求項39記載のデバイス。
- 半導体ナノクリスタルの前記単層を含む事前定義領域が、正孔輸送物質を含む前記層と電子輸送物質を含む前記層との間に配置された、請求項40記載のデバイス。
- さらに、半導体ナノクリスタルの第二単層を含む第二事前定義領域を含む、請求項41記載のデバイス。
- 半導体ナノクリスタルの前記第一単層が、前記第二単層の発光波長とは異なる発光波長を有する、請求項42記載のデバイス。
- 第一電極と、前記第一電極に向かい合わされた第二電極と、前記第一電極と前記第二電極との間に配置された半導体ナノクリスタルの単層を含む事前定義領域とを含むデバイスを提供するステップと、
前記第一電極と前記第二電極とにわたって電圧を印加するステップと
を含む、光を発生する方法。 - 前記第一電極と前記第二電極とにわたって電圧を印加するステップが、前記第一電極と前記第二電極との間に電流を流すステップを含む、請求項45記載の方法。
- 複数の発光デバイスを含むディスプレイであって、少なくとも一つの発光デバイスが、
第一電極と、
前記第一電極に向かい合わされた第二電極と、
前記第一電極と前記第二電極との間に配置された半導体ナノクリスタルの単層を含む事前定義領域と
を含む、ディスプレイ。 - さらに、
第一電極と、
前記第一電極に向かい合わされた第二電極と、
前記第一電極と前記第二電極との間に配置された半導体ナノクリスタルの単層を含む事前定義領域と
を含む第二発光デバイスを含む、請求項46記載のディスプレイ。 - 前記第一発光デバイスが、前記第二発光デバイスの発光波長から区別可能な発光波長を有する、請求項47記載のディスプレイ。
- さらに、
第一電極と、
前記第一電極に向かい合わされた第二電極と、
前記第一電極と前記第二電極との間に配置された半導体ナノクリスタルの単層を含む事前定義領域と
を含む第三発光デバイスを含み、前記第三発光デバイスが、前記第二発光デバイスの発光波長から、且つ前記第一発光デバイスの発光波長から区別可能である発光波長を有する、請求項48記載のディスプレイ。 - さらに、
第一電極と、
前記第一電極に向かい合わされた第二電極と、
前記第一電極と前記第二電極との間に配置された半導体ナノクリスタルの単層を含む事前定義領域と
を含む第四発光デバイスを含み、前記第四発光デバイスが、前記第三発光デバイスの発光波長から、前記第二発光デバイスの発光波長から、且つ前記第一発光デバイスの発光波長から区別可能な発光波長を有する、請求項49記載のディスプレイ。 - 前記発光デバイスが、10ミリメートル未満の寸法を有する、請求項46記載のディスプレイ。
- 前記発光デバイスが、1ミリメートル未満の寸法を有する、請求項46記載のディスプレイ。
- 前記発光デバイスが、100マイクロメートル未満の寸法を有する、請求項46記載のディスプレイ。
- さらに、バックプレーンを含む、請求項46記載のディスプレイ。
- 前記バックプレーンが、アクティブマトリックス電子回路を含む請求項54記載のディスプレイ。
- 前記バックプレーンが、パッシブマトリックス電子回路を含む請求項54記載のディスプレイ。
- 第一電極と、
前記第一電極に向かい合わされた第二電極と、
前記第一電極と前記第二電極との間に配置された半導体ナノクリスタルの単層を含む事前定義領域と
を含む発光デバイスを複数含む、ディスプレイ。 - 各発光デバイスの半導体ナノクリスタルが、紫外、青色、緑色、黄色、赤色、又は赤外発光波長、或いはそれらの組合せから選択される発光波長を有する、請求項57記載のディスプレイ。
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KR101369205B1 (ko) | 2014-03-04 |
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WO2006047215A3 (en) | 2006-06-15 |
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EP2498274B1 (en) | 2014-09-17 |
KR20130133081A (ko) | 2013-12-05 |
TWI462781B (zh) | 2014-12-01 |
TW200620713A (en) | 2006-06-16 |
TW200621382A (en) | 2006-07-01 |
EP2254393B1 (en) | 2016-05-11 |
EP1803174A2 (en) | 2007-07-04 |
WO2006135435A2 (en) | 2006-12-21 |
JP5689842B2 (ja) | 2015-03-25 |
US20060196375A1 (en) | 2006-09-07 |
DE602005021808D1 (de) | 2010-07-22 |
EP1803174B1 (en) | 2010-06-09 |
ATE470959T1 (de) | 2010-06-15 |
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