JP2008517743A - パターン物質を転写するための方法及びシステム - Google Patents
パターン物質を転写するための方法及びシステム Download PDFInfo
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- JP2008517743A JP2008517743A JP2007538031A JP2007538031A JP2008517743A JP 2008517743 A JP2008517743 A JP 2008517743A JP 2007538031 A JP2007538031 A JP 2007538031A JP 2007538031 A JP2007538031 A JP 2007538031A JP 2008517743 A JP2008517743 A JP 2008517743A
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- HRHKULZDDYWVBE-UHFFFAOYSA-N indium;oxozinc;tin Chemical compound [In].[Sn].[Zn]=O HRHKULZDDYWVBE-UHFFFAOYSA-N 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
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- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical group [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
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- VMDCDZDSJKQVBK-UHFFFAOYSA-N trimethyl(trimethylsilyltellanyl)silane Chemical compound C[Si](C)(C)[Te][Si](C)(C)C VMDCDZDSJKQVBK-UHFFFAOYSA-N 0.000 description 1
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- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/0057—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material where an intermediate transfer member receives the ink before transferring it on the printing material
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
- B41M3/00—Printing processes to produce particular kinds of printed work, e.g. patterns
- B41M3/003—Printing processes to produce particular kinds of printed work, e.g. patterns on optical devices, e.g. lens elements; for the production of optical devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
- B41M5/00—Duplicating or marking methods; Sheet materials for use therein
- B41M5/025—Duplicating or marking methods; Sheet materials for use therein by transferring ink from the master sheet
- B41M5/0256—Duplicating or marking methods; Sheet materials for use therein by transferring ink from the master sheet the transferable ink pattern being obtained by means of a computer driven printer, e.g. an ink jet or laser printer, or by electrographic means
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
- H05B33/145—Arrangements of the electroluminescent material
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
Abstract
【選択図】 なし
Description
本出願は、2004年10月22日出願の米国仮特許出願第60/620,967号、及び2004年11月22日出願の米国仮特許出願第60/629,579号に対する優先権を主張するものである。各仮特許出願の全体を引用により取り込む。
本発明は、パターン物質を転写するための方法及びシステムに関するものである。
(連邦政府による資金提供を受けた開発研究)
米国政府は、全米科学財団(National Science Foundation)からのGrant No. 6896872に従って、本発明において特定の権利を有することがある。
一般に、コンタクト印刷は、パターンモールドを形成することから始まる。モールドは、隆起部と窪み部のパターンを有する表面を有する。パターンモールド表面に接触しながら硬化される液体ポリマー前駆体で、モールドのパターン表面を被覆することによって、隆起部と窪み部の相補パターンを有するスタンプが形成される。次いで、スタンプに一様にインク付けすることができる。即ち、スタンプが、基板上に堆積すべき物質に接触され、物質は、隆起部と窪み部のパターンを覆う。物質は、スタンプに可逆に接着される。次いで、インク付きスタンプが、基板に接触される。スタンプの隆起領域は、基板に接触することができ、スタンプの窪み領域は、基板から離すことができる。インク付きスタンプが基板に接触するとき、インク物質(又は少なくともその一部)が、スタンプから基板に転写される。このようにして、隆起部と窪み部のパターンが、基板上で物質を含む領域と物質を含まない領域として、スタンプから基板に転写される。
物質は、コンタクト印刷を使用して基板に堆積することができる。テクスチャスタンプを使用するコンタクト印刷は、基板上へのフィーチャのミクロンスケール(例えば1mm未満、500μm未満、200μm未満、又は100μm未満)パターニングを可能にする。この手法は、基板へのパターン物質の乾燥(即ち無溶媒)塗布を可能にし、したがって、基板は、可溶性及び表面化学要件を受けない。例えば、半導体ナノクリスタルの単層をコンタクト印刷によって堆積することができる。コンタクト印刷の例に関しては、全体を引用により組み込む2004年10月22日出願の米国特許出願第60/620,967号を参照のこと。
パターンがフィーチャレススタンプ上に形成されるとき、パターンスタンプコンタクト印刷に対する機械的な制限を克服することができる。テクスチャスタンプが基板に接触するとき、(物質転写を実現するのに必要な)任意の印加圧力が、予測可能に、しかし非一様に分布される。これにより誘発される応力が、基板表面に接触しない部分でのスタンプの撓み(sagging)を引き起こすことがある。印加圧力が十分に大きい場合、撓み部分が基板表面に接触して、望ましくない領域での物質転写をもたらすことがある。対照的に、隆起部及び窪み部を実質的に有しないスタンプに印加される圧力は、スタンプ範囲にわたって一様に分布された力をもたらし、したがって撓み及び他の非一様プロセスを減少する、又はなくすことができる。
別の態様では、基板に複数の物質を転写する方法が、アプリケータの表面上に第一物質を選択的に堆積するステップと、該アプリケータの表面上に第二物質を選択的に堆積するステップと、該アプリケータの表面を該基板に接触させるステップとを含む。
該システムは、アプリケータの表面に接触するように配置された基板を含むことができる。アプリケータは、インクジェットプリントヘッドに関してアプリケータの表面を移動させるように構成することができる。アプリケータは、ドラムに取り付けることができ、ドラムは、回転するように構成される。アプリケータの表面は、基板上を転がるように構成することができる。アプリケータの表面は、隆起部又は窪み部を含み、或いはアプリケータは、隆起部及び窪み部を実質的に有しないこともある。アプリケータの表面は、基板と連続的に接触するように構成することができる。
本発明の他の特徴、目的、及び利点は、説明及び図面から、且つ特許請求の範囲から明らかになろう。
一般に、発光デバイスは、複数の半導体ナノクリスタルを含むことができる。半導体ナノクリスタルは、典型的には有機配位子の層で修飾された、ナノメートルスケール無機半導体粒子である。これらのゼロ次元半導体構造は、強い量子閉じ込め効果を示し、この効果は、ナノクリスタルのサイズ及び組成で調整可能な電子的及び光学的特性を有する複合へテロ構造を作り出すボトムアップ化学的手法を設計する際に利用され得る。
コンタクト印刷及び関連の技法は、例えば米国特許第5,512,131号、第6,180,239号、第6,518,168号に記載されており、各特許文献の全体を引用により取り込む。
適切な配位子を、商業的に購入することができ、又は、例えばAdvanced Organic Chemistry, J. March(その全体を引用により取り込む)に記載されている通常の合成有機技法によって調製することができる。
赤色、緑色、及び青色発光デバイスのエレクトロルミネッセンス(EL)スペクトルを記録し、個々の赤色、緑色、及び青色デバイスのデジタル写真を撮影した。外部量子効率及び電流電圧曲線も測定した。
より大きな色飽和は、CBPの使用と共にここで利用可能な、より大きなダウンヒルエネルギー移動プロセス(downhill energy transfer process)に起因させることができ、これは、有機発光の強度の減少、及び半導体ナノクリスタル発光の強度の増加をもたらし、半導体ナノクリスタルELと有機ELとの間でのより大きな比率をもたらす。
他の実施態様は、添付の特許請求の範囲の範囲内にある。
Claims (44)
- 基板に物質を転写する方法であって、
アプリケータの表面上に物質を選択的に堆積するステップと、
前記アプリケータの前記表面を前記基板に接触させるステップと
を含む、前記方法。 - 前記物質が、接触前に、溶媒を実質的に有しない、請求項1記載の方法。
- 前記物質を選択的に堆積するステップが、前記アプリケータの前記表面上に前記物質を含むパターンを形成するステップを含む、請求項1記載の方法。
- 前記パターンのフィーチャが、1000マイクロメートル未満の寸法を有する、請求項3記載の方法。
- 前記パターンのフィーチャが、100マイクロメートル未満の寸法を有する、請求項3記載の方法。
- 前記パターンのフィーチャが、10マイクロメートル未満の寸法を有する、請求項3記載の方法。
- 前記パターンを形成するステップが、前記物質をインクジェット印刷するステップを含む、請求項1記載の方法。
- 前記アプリケータの前記表面が、隆起部又は窪み部を含む、請求項1記載の方法。
- 前記アプリケータの前記表面が、隆起部及び窪み部を実質的に有しない、請求項1記載の方法。
- 前記アプリケータが、エラストマー物質を含む、請求項1記載の方法。
- さらに、前記アプリケータの前記表面上に前記物質を選択的に堆積する前に、前記アプリケータの前記表面を改質するステップを含む、請求項1記載の方法。
- 前記アプリケータの前記表面を改質するステップが、前記アプリケータの前記表面を、基板との接触時に前記アプリケータから前記物質の少なくとも一部を解放するように選択される組成物と接触させるステップを含む、請求項11記載の方法。
- 前記組成物が、芳香族有機ポリマーを含む、請求項12記載の方法。
- さらに、前記アプリケータの前記表面上に第二物質を選択的に堆積するステップを含む、請求項1記載の方法。
- 前記第二物質を選択的に堆積するステップが、前記アプリケータの前記表面上にパターンを形成するステップを含む、請求項14記載の方法。
- 前記第二物質を堆積するステップが、インクジェット印刷するステップを含む、請求項14記載の方法。
- 前記アプリケータの前記表面が、前記基板と連続的に接触する、請求項1記載の方法。
- 前記物質が、ナノ物質を含む、請求項1記載の方法。
- 前記ナノ物質が、半導体ナノクリスタルを含む、請求項18記載の方法。
- 基板に複数の物質を転写する方法であって、
アプリケータの表面上に第一物質を選択的に堆積するステップと、
前記アプリケータの前記表面上に第二物質を選択的に堆積するステップと、
前記アプリケータの前記表面を前記基板に接触させるステップと
を含む、前記方法。 - 前記第一物質が、接触前に、溶媒を実質的に有しない、請求項20記載の方法。
- 前記第二物質が、接触前に、溶媒を実質的に有しない、請求項21記載の方法。
- 前記第一物質を堆積するステップが、前記アプリケータの前記表面上にパターンを形成するステップを含む、請求項20記載の方法。
- 前記第二物質を堆積するステップが、前記アプリケータの前記表面上にパターンを形成するステップを含む、請求項23記載の方法。
- 前記第一物質を堆積するステップが、インクジェット印刷するステップを含む、請求項24記載の方法。
- 前記第二物質を堆積するステップが、インクジェット印刷するステップを含む、請求項25記載の方法。
- 基板に物質を転写するためのシステムであって、
前記物質を収容するリザーバを含むインクジェットプリントヘッドと、
前記インクジェットプリントヘッドから前記物質を受け取るように配置された表面を有するアプリケータと
を含む、前記システム。 - さらに、前記アプリケータの前記表面に接触するように配置された基板を含む、請求項27記載のシステム。
- 前記アプリケータの前記表面が、前記基板と連続的に接触するように構成された、請求項28記載のシステム。
- 前記アプリケータが、前記インクジェットプリントヘッドに対して前記アプリケータの前記表面を移動させるように構成された、請求項28記載のシステム。
- 前記アプリケータが、ドラムに取り付けられ、前記ドラムが、回転するように構成された、請求項28記載のシステム。
- 前記アプリケータの前記表面が、前記基板上を転がるように構成された、請求項31記載のシステム。
- 前記アプリケータの前記表面が、隆起部又は窪み部を含む、請求項27記載のシステム。
- 前記アプリケータの前記表面が、隆起部及び窪み部を実質的に有しない、請求項27記載のシステム。
- 発光デバイスを製造する方法であって、
アプリケータの表面上に物質をインクジェット印刷するステップと、
前記アプリケータの前記表面を基板に接触させるステップと
を含む、前記方法。 - 前記物質をインクジェット印刷するステップが、前記アプリケータの前記表面上にパターンを形成するステップを含む、請求項35記載の方法。
- 前記物質が、発光物質を含む、請求項35記載の方法。
- 前記発光物質が、半導体ナノクリスタルを含む、請求項37記載の方法。
- 前記基板が、電極、正孔輸送物質、電子輸送物質、正孔注入物質、電子注入物質、又はそれらの組合せを含む、請求項35記載の方法。
- アプリケータと、前記アプリケータの表面上にパターンを形成する物質とを含む、物質を塗布するためのデバイス。
- 前記アプリケータの前記表面が、隆起部又は窪み部を含む、請求項40記載のデバイス。
- 前記アプリケータの前記表面が、隆起部又は窪み部を実質的に有しない、請求項40記載のデバイス。
- 前記アプリケータが、エラストマー物質を含む、請求項40記載のデバイス。
- さらに、アプリケータの前記表面上にパターンを形成する第二物質を含む、請求項40記載のデバイス。
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013080741A1 (ja) * | 2011-11-30 | 2013-06-06 | セントラル硝子株式会社 | 光重合性組成物並びにそれを用いたパターン形成方法 |
Families Citing this family (97)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10225906B2 (en) * | 2004-10-22 | 2019-03-05 | Massachusetts Institute Of Technology | Light emitting device including semiconductor nanocrystals |
WO2006137924A2 (en) | 2004-11-03 | 2006-12-28 | Massachusetts Institute Of Technology | Light emitting device |
US7799422B2 (en) * | 2004-11-03 | 2010-09-21 | Massachusetts Institute Of Technology | Absorbing film |
US8891575B2 (en) * | 2004-11-30 | 2014-11-18 | Massachusetts Institute Of Technology | Optical feedback structures and methods of making |
US20070153362A1 (en) * | 2004-12-27 | 2007-07-05 | Regents Of The University Of California | Fabric having nanostructured thin-film networks |
PL2546192T3 (pl) | 2005-02-16 | 2020-05-18 | Massachusetts Institute Of Technology | Urządzenie emitujące światło, zawierające nanokryształy półprzewodnikowe |
US9297092B2 (en) | 2005-06-05 | 2016-03-29 | Qd Vision, Inc. | Compositions, optical component, system including an optical component, devices, and other products |
US8718437B2 (en) * | 2006-03-07 | 2014-05-06 | Qd Vision, Inc. | Compositions, optical component, system including an optical component, devices, and other products |
US8845927B2 (en) * | 2006-06-02 | 2014-09-30 | Qd Vision, Inc. | Functionalized nanoparticles and method |
US20080023067A1 (en) * | 2005-12-27 | 2008-01-31 | Liangbing Hu | Solar cell with nanostructure electrode |
US20070236138A1 (en) * | 2005-12-27 | 2007-10-11 | Liangbing Hu | Organic light-emitting diodes with nanostructure film electrode(s) |
US8138075B1 (en) | 2006-02-06 | 2012-03-20 | Eberlein Dietmar C | Systems and methods for the manufacture of flat panel devices |
US8835941B2 (en) * | 2006-02-09 | 2014-09-16 | Qd Vision, Inc. | Displays including semiconductor nanocrystals and methods of making same |
JP2009526370A (ja) * | 2006-02-09 | 2009-07-16 | キユーデイー・ビジヨン・インコーポレーテツド | 半導体ナノ結晶およびドープされた有機材料を含む層を含むデバイスおよび方法 |
KR20080103527A (ko) | 2006-02-14 | 2008-11-27 | 메사츄세츠 인스티튜트 어브 테크놀로지 | 백색 발광 장치들 |
US9874674B2 (en) | 2006-03-07 | 2018-01-23 | Samsung Electronics Co., Ltd. | Compositions, optical component, system including an optical component, devices, and other products |
US9951438B2 (en) | 2006-03-07 | 2018-04-24 | Samsung Electronics Co., Ltd. | Compositions, optical component, system including an optical component, devices, and other products |
WO2007143197A2 (en) * | 2006-06-02 | 2007-12-13 | Qd Vision, Inc. | Light-emitting devices and displays with improved performance |
WO2008070028A2 (en) * | 2006-12-01 | 2008-06-12 | Qd Vision, Inc. | Improved composites and devices including nanoparticles |
US8849087B2 (en) | 2006-03-07 | 2014-09-30 | Qd Vision, Inc. | Compositions, optical component, system including an optical component, devices, and other products |
EP2041478B1 (en) | 2006-03-07 | 2014-08-06 | QD Vision, Inc. | An article including semiconductor nanocrystals |
WO2007112088A2 (en) * | 2006-03-24 | 2007-10-04 | Qd Vision, Inc. | Hyperspectral imaging device |
WO2007117668A2 (en) * | 2006-04-07 | 2007-10-18 | Qd Vision, Inc. | Methods and articles including nanomaterial |
WO2007120877A2 (en) * | 2006-04-14 | 2007-10-25 | Qd Vision, Inc. | Transfer surface for manufacturing a light emitting device |
US8941299B2 (en) * | 2006-05-21 | 2015-01-27 | Massachusetts Institute Of Technology | Light emitting device including semiconductor nanocrystals |
US9212056B2 (en) * | 2006-06-02 | 2015-12-15 | Qd Vision, Inc. | Nanoparticle including multi-functional ligand and method |
WO2007143227A2 (en) * | 2006-06-10 | 2007-12-13 | Qd Vision, Inc. | Materials,thin films,optical filters, and devices including same |
WO2008111947A1 (en) | 2006-06-24 | 2008-09-18 | Qd Vision, Inc. | Methods and articles including nanomaterial |
WO2008105792A2 (en) | 2006-06-24 | 2008-09-04 | Qd Vision, Inc. | Methods for depositing nanomaterial, methods for fabricating a device, methods for fabricating an array of devices and compositions |
WO2008108798A2 (en) | 2006-06-24 | 2008-09-12 | Qd Vision, Inc. | Methods for depositing nanomaterial, methods for fabricating a device, and methods for fabricating an array of devices |
US8643058B2 (en) * | 2006-07-31 | 2014-02-04 | Massachusetts Institute Of Technology | Electro-optical device including nanocrystals |
US8084101B2 (en) * | 2006-08-01 | 2011-12-27 | The Board of Regents of the Nevada Systems of Higher Education on behalf of the University of Nevada, Las Vegas | Fabrication of patterned and ordered nanoparticles |
US20080047930A1 (en) * | 2006-08-23 | 2008-02-28 | Graciela Beatriz Blanchet | Method to form a pattern of functional material on a substrate |
WO2008033388A2 (en) * | 2006-09-12 | 2008-03-20 | Qd Vision, Inc. | A composite including nanoparticles, methods, and products including a composite |
JP2010508620A (ja) * | 2006-09-12 | 2010-03-18 | キユーデイー・ビジヨン・インコーポレーテツド | 所定のパターンを表示するために有用なエレクトロルミネセントディスプレイ |
US8219170B2 (en) * | 2006-09-20 | 2012-07-10 | Nellcor Puritan Bennett Llc | System and method for practicing spectrophotometry using light emitting nanostructure devices |
US20080083484A1 (en) * | 2006-09-28 | 2008-04-10 | Graciela Beatriz Blanchet | Method to form a pattern of functional material on a substrate |
US20080110363A1 (en) * | 2006-11-14 | 2008-05-15 | National Chung Cheng University | Physisorption-based microcontact printing process capable of controlling film thickness |
WO2008063652A1 (en) | 2006-11-21 | 2008-05-29 | Qd Vision, Inc. | Blue emitting semiconductor nanocrystals and compositions and devices including same |
WO2008133660A2 (en) | 2006-11-21 | 2008-11-06 | Qd Vision, Inc. | Nanocrystals including a group iiia element and a group va element, method, composition, device and other prodcucts |
WO2008063658A2 (en) | 2006-11-21 | 2008-05-29 | Qd Vision, Inc. | Semiconductor nanocrystals and compositions and devices including same |
WO2008063653A1 (en) | 2006-11-21 | 2008-05-29 | Qd Vision, Inc. | Semiconductor nanocrystals and compositions and devices including same |
WO2008063657A2 (en) * | 2006-11-21 | 2008-05-29 | Qd Vision, Inc. | Light emitting devices and displays with improved performance |
KR100850717B1 (ko) * | 2006-12-06 | 2008-08-06 | 삼성전자주식회사 | 이미지형성체와 그 제조장치 및 방법 |
KR101391807B1 (ko) * | 2007-01-03 | 2014-05-08 | 삼성디스플레이 주식회사 | 잉크젯 프린팅과 나노 임프린팅을 이용한 패턴 형성 방법 |
US20080172197A1 (en) * | 2007-01-11 | 2008-07-17 | Motorola, Inc. | Single laser multi-color projection display with quantum dot screen |
US8836212B2 (en) | 2007-01-11 | 2014-09-16 | Qd Vision, Inc. | Light emissive printed article printed with quantum dot ink |
US20080233489A1 (en) * | 2007-03-22 | 2008-09-25 | Graciela Beatriz Blanchet | Method to form a pattern of functional material on a substrate using a stamp having a surface modifying material |
US8222061B2 (en) * | 2007-03-30 | 2012-07-17 | The Penn State Research Foundation | Mist fabrication of quantum dot devices |
US7875313B2 (en) * | 2007-04-05 | 2011-01-25 | E. I. Du Pont De Nemours And Company | Method to form a pattern of functional material on a substrate using a mask material |
US10043993B2 (en) * | 2007-06-25 | 2018-08-07 | Massachusetts Institute Of Technology | Electro-optical device |
JP5773646B2 (ja) | 2007-06-25 | 2015-09-02 | キユーデイー・ビジヨン・インコーポレーテツド | ナノ材料を被着させることを含む組成物および方法 |
WO2009002551A1 (en) * | 2007-06-26 | 2008-12-31 | Qd Vision, Inc. | Photovoltaic devices including quantum dot down-conversion materials useful for solar cells and materials including quantum dots |
US7989153B2 (en) * | 2007-07-11 | 2011-08-02 | Qd Vision, Inc. | Method and apparatus for selectively patterning free standing quantum DOT (FSQDT) polymer composites |
WO2009014707A2 (en) | 2007-07-23 | 2009-01-29 | Qd Vision, Inc. | Quantum dot light enhancement substrate and lighting device including same |
WO2009089472A2 (en) * | 2008-01-10 | 2009-07-16 | Massachusetts Institute Of Technology | Photovoltaic devices |
WO2009089470A2 (en) * | 2008-01-11 | 2009-07-16 | Massachusetts Institute Of Technology | Photovoltaic devices |
WO2009099425A2 (en) * | 2008-02-07 | 2009-08-13 | Qd Vision, Inc. | Flexible devices including semiconductor nanocrystals, arrays, and methods |
KR101995371B1 (ko) | 2008-04-03 | 2019-07-02 | 삼성 리서치 아메리카 인코포레이티드 | 양자점들을 포함하는 발광 소자 |
US9525148B2 (en) | 2008-04-03 | 2016-12-20 | Qd Vision, Inc. | Device including quantum dots |
US9207385B2 (en) | 2008-05-06 | 2015-12-08 | Qd Vision, Inc. | Lighting systems and devices including same |
WO2009137053A1 (en) | 2008-05-06 | 2009-11-12 | Qd Vision, Inc. | Optical components, systems including an optical component, and devices |
JP2011524064A (ja) | 2008-05-06 | 2011-08-25 | キユーデイー・ビジヨン・インコーポレーテツド | 量子閉じ込め半導体ナノ粒子を含有する固体照明装置 |
US8765223B2 (en) * | 2008-05-08 | 2014-07-01 | Air Products And Chemicals, Inc. | Binary and ternary metal chalcogenide materials and method of making and using same |
US8507040B2 (en) | 2008-05-08 | 2013-08-13 | Air Products And Chemicals, Inc. | Binary and ternary metal chalcogenide materials and method of making and using same |
US8269985B2 (en) * | 2009-05-26 | 2012-09-18 | Zena Technologies, Inc. | Determination of optimal diameters for nanowires |
US20100330367A1 (en) * | 2009-02-03 | 2010-12-30 | Ut-Battelle, Llc | Microbially-mediated method for synthesis of non-oxide semiconductor nanoparticles |
WO2010129374A2 (en) | 2009-04-28 | 2010-11-11 | Qd Vision, Inc. | Optical materials, optical components, and methods |
US9574134B2 (en) * | 2009-05-07 | 2017-02-21 | Massachusetts Institute Of Technology | Light emitting device including semiconductor nanocrystals |
WO2010129887A2 (en) | 2009-05-07 | 2010-11-11 | Massachusetts Institute Of Technology | Light emitting device including semiconductor nanocrystals |
US8106420B2 (en) | 2009-06-05 | 2012-01-31 | Massachusetts Institute Of Technology | Light emitting device including semiconductor nanocrystals |
US9340697B2 (en) * | 2009-08-14 | 2016-05-17 | Nano-C, Inc. | Solvent-based and water-based carbon nanotube inks with removable additives |
EP2465147B1 (en) | 2009-08-14 | 2019-02-27 | Samsung Electronics Co., Ltd. | Lighting devices, an optical component for a lighting device, and methods |
CN102482457B (zh) | 2009-09-09 | 2015-04-15 | Qd视光有限公司 | 包含纳米颗粒的颗粒、其应用和方法 |
WO2011031876A1 (en) | 2009-09-09 | 2011-03-17 | Qd Vision, Inc. | Formulations including nanoparticles |
JP2013508895A (ja) | 2009-10-17 | 2013-03-07 | キユーデイー・ビジヨン・インコーポレーテツド | 光学部品、これを含む製品およびこれを作製する方法 |
KR101924080B1 (ko) | 2009-11-11 | 2018-11-30 | 삼성 리서치 아메리카 인코포레이티드 | 양자점을 포함하는 디바이스 |
US8475869B2 (en) * | 2010-04-02 | 2013-07-02 | Rhodia Operations | Selective nanoparticle assembly systems and methods |
TW201225370A (en) * | 2010-12-15 | 2012-06-16 | Nat Univ Tsing Hua | Method for manufacturing high-quality organic light-emitting diode (OLED) |
WO2012134629A1 (en) | 2011-04-01 | 2012-10-04 | Qd Vision, Inc. | Quantum dots, method, and devices |
WO2013019299A2 (en) | 2011-05-11 | 2013-02-07 | Qd Vision, Inc. | Method for processing devices including quantum dots and devices |
WO2012158252A1 (en) | 2011-05-16 | 2012-11-22 | Qd Vision, Inc. | Device including quantum dots and method for making same |
WO2012158832A2 (en) | 2011-05-16 | 2012-11-22 | Qd Vision, Inc. | Method for preparing semiconductor nanocrystals |
WO2013028253A1 (en) | 2011-08-19 | 2013-02-28 | Qd Vision, Inc. | Semiconductor nanocrystals and methods |
KR101678286B1 (ko) * | 2011-09-21 | 2016-11-21 | 에베 그룹 에. 탈너 게엠베하 | 폴리크로머타이징층 및 기판의 제조 방법과 폴리크로머타이징층을 구비한 발광 다이오드 |
WO2013103440A1 (en) | 2012-01-06 | 2013-07-11 | Qd Vision, Inc. | Light emitting device including blue emitting quantum dots and method |
US9929325B2 (en) | 2012-06-05 | 2018-03-27 | Samsung Electronics Co., Ltd. | Lighting device including quantum dots |
WO2014088667A2 (en) | 2012-09-14 | 2014-06-12 | Qd Vision, Inc. | Light emitting device including tandem structure |
KR101429118B1 (ko) * | 2013-02-04 | 2014-08-14 | 한국과학기술연구원 | 자기조립 나노 구조물을 이용한 반사 방지막 및 그 제조방법 |
US9574135B2 (en) * | 2013-08-22 | 2017-02-21 | Nanoco Technologies Ltd. | Gas phase enhancement of emission color quality in solid state LEDs |
US20160365478A1 (en) | 2013-12-27 | 2016-12-15 | The Board Of Trustee Of The University Of Illinois | Nanostructure material stack-transfer methods and devices |
KR101651872B1 (ko) * | 2015-04-23 | 2016-08-29 | 경북대학교 산학협력단 | 나노 결정 발광 다이오드 및 그 제조 방법 |
CN108400251A (zh) * | 2018-04-23 | 2018-08-14 | 华南理工大学 | 一种高分辨率的钙钛矿电致发光器件及其制备方法 |
US11152536B2 (en) | 2018-09-17 | 2021-10-19 | The Board Of Trustees Of The University Of Illinois | Photoresist contact patterning of quantum dot films |
CN109301093A (zh) * | 2018-09-30 | 2019-02-01 | 华南理工大学 | 一种导电可透光钙钛矿量子点薄膜的制备方法 |
US20220407024A1 (en) * | 2019-10-28 | 2022-12-22 | Fraunhofer-Gesellischaft Zur Forderung Der Angewandten Forschung E.V. | Method for producing a light-emitting diode having polarized emission |
IT201900020138A1 (it) * | 2019-10-31 | 2021-05-01 | Fabio Fontana | Dispositivo terapeutico per patologia infiammatoria, dolorosa e una rimodulazione neuro-muscolare e posturale |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0834116A (ja) * | 1994-07-22 | 1996-02-06 | Fuji Xerox Co Ltd | インクジェット記録装置 |
JP2002060979A (ja) * | 2000-04-18 | 2002-02-28 | Internatl Business Mach Corp <Ibm> | マイクロコンタクト・プリンティングによるパターン化されたインジウム亜鉛酸化物フィルムおよびインジウムすず酸化物フィルムの形成方法 |
JP2002540591A (ja) * | 1998-12-15 | 2002-11-26 | イー−インク コーポレイション | プラスチック基板へのトランジスタアレイの印刷方法 |
JP2005534190A (ja) * | 2002-07-26 | 2005-11-10 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | マイクロコンタクトプリント法 |
Family Cites Families (104)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US400908A (en) | 1889-04-09 | Gustav fuchs | ||
US550314A (en) | 1895-11-26 | Combined ferrule and bushing | ||
US3998573A (en) * | 1972-01-17 | 1976-12-21 | Abex Corporation | Manufacture of friction elements |
DE3830775A1 (de) * | 1987-09-11 | 1989-03-23 | Ricoh Kk | Thermisches mimeograph-schablonenpapier |
KR920007701A (ko) * | 1990-10-05 | 1992-05-27 | 이시다 아키라 | 균일한 두께의 박막을 형성하기 위한 롤 코팅장치 |
US5099256A (en) * | 1990-11-23 | 1992-03-24 | Xerox Corporation | Ink jet printer with intermediate drum |
JP3125332B2 (ja) * | 1991-06-21 | 2001-01-15 | ソニー株式会社 | 量子ドットトンネル素子とそれを用いた情報処理装置及び情報処理方法 |
JPH05116475A (ja) | 1991-10-29 | 1993-05-14 | Kimoto & Co Ltd | 表面改質孔版およびその表面改質方法 |
US5505928A (en) * | 1991-11-22 | 1996-04-09 | The Regents Of University Of California | Preparation of III-V semiconductor nanocrystals |
EP0613585A4 (en) * | 1991-11-22 | 1995-06-21 | Univ California | SEMICONDUCTOR NANOCRYSTALS COVALENTLY LINKED TO SOLID INORGANIC SURFACES USING SELF-ASSEMBLED MONO-LAYERS. |
US5260957A (en) * | 1992-10-29 | 1993-11-09 | The Charles Stark Draper Laboratory, Inc. | Quantum dot Laser |
US5293050A (en) * | 1993-03-25 | 1994-03-08 | International Business Machines Corporation | Semiconductor quantum dot light emitting/detecting devices |
US6048616A (en) * | 1993-04-21 | 2000-04-11 | Philips Electronics N.A. Corp. | Encapsulated quantum sized doped semiconductor particles and method of manufacturing same |
US5900160A (en) * | 1993-10-04 | 1999-05-04 | President And Fellows Of Harvard College | Methods of etching articles via microcontact printing |
US5512131A (en) * | 1993-10-04 | 1996-04-30 | President And Fellows Of Harvard College | Formation of microstamped patterns on surfaces and derivative articles |
US6180239B1 (en) * | 1993-10-04 | 2001-01-30 | President And Fellows Of Harvard College | Microcontact printing on surfaces and derivative articles |
US5422489A (en) * | 1994-01-24 | 1995-06-06 | Bhargava; Rameshwar N. | Light emitting device |
US5537000A (en) * | 1994-04-29 | 1996-07-16 | The Regents, University Of California | Electroluminescent devices formed using semiconductor nanocrystals as an electron transport media and method of making such electroluminescent devices |
US5677545A (en) * | 1994-09-12 | 1997-10-14 | Motorola | Organic light emitting diodes with molecular alignment and method of fabrication |
US5881200A (en) | 1994-09-29 | 1999-03-09 | British Telecommunications Public Limited Company | Optical fibre with quantum dots |
FR2726185B1 (fr) * | 1994-11-02 | 1997-04-25 | Oreal | Composition tinctoriale a base de colorants d'oxydation et procede de teinture mettant en oeuvre cette composition |
US5585640A (en) * | 1995-01-11 | 1996-12-17 | Huston; Alan L. | Glass matrix doped with activated luminescent nanocrystalline particles |
WO1997007429A1 (en) * | 1995-08-18 | 1997-02-27 | President And Fellows Of Harvard College | Self-assembled monolayer directed patterning of surfaces |
GB9518910D0 (en) * | 1995-09-15 | 1995-11-15 | Imperial College | Process |
US5853446A (en) * | 1996-04-16 | 1998-12-29 | Corning Incorporated | Method for forming glass rib structures |
AU4749997A (en) * | 1996-10-10 | 1998-05-05 | Rjr Polymers, Inc. | Inverted stamping process |
US6103868A (en) * | 1996-12-27 | 2000-08-15 | The Regents Of The University Of California | Organically-functionalized monodisperse nanocrystals of metals |
US5958573A (en) | 1997-02-10 | 1999-09-28 | Quantum Energy Technologies | Electroluminescent device having a structured particle electron conductor |
JP4071360B2 (ja) * | 1997-08-29 | 2008-04-02 | 株式会社東芝 | 半導体装置 |
JPH11135838A (ja) * | 1997-10-20 | 1999-05-21 | Ind Technol Res Inst | 白色発光ダイオード及びその製造方法 |
US6322901B1 (en) | 1997-11-13 | 2001-11-27 | Massachusetts Institute Of Technology | Highly luminescent color-selective nano-crystalline materials |
US6607829B1 (en) * | 1997-11-13 | 2003-08-19 | Massachusetts Institute Of Technology | Tellurium-containing nanocrystalline materials |
US6236060B1 (en) * | 1997-11-19 | 2001-05-22 | International Business Machines Corporation | Light emitting structures in back-end of line silicon technology |
DE19812258A1 (de) * | 1998-03-20 | 1999-09-23 | Bayer Ag | Elektrolumineszierende Anordnungen unter Verwendung von Blendsystemen |
JPH11273859A (ja) * | 1998-03-24 | 1999-10-08 | Sony Corp | 有機電界発光素子及びその製造方法 |
US6501091B1 (en) * | 1998-04-01 | 2002-12-31 | Massachusetts Institute Of Technology | Quantum dot white and colored light emitting diodes |
JP4126751B2 (ja) | 1998-05-26 | 2008-07-30 | ソニー株式会社 | 表示装置および照明装置 |
US6864626B1 (en) * | 1998-06-03 | 2005-03-08 | The Regents Of The University Of California | Electronic displays using optically pumped luminescent semiconductor nanocrystals |
ES2186393T3 (es) | 1998-07-29 | 2003-05-01 | Sanders W A Papier | Papel de transferencia para impresora de chorro de tinta. |
US6294401B1 (en) | 1998-08-19 | 2001-09-25 | Massachusetts Institute Of Technology | Nanoparticle-based electrical, chemical, and mechanical structures and methods of making same |
US6251303B1 (en) * | 1998-09-18 | 2001-06-26 | Massachusetts Institute Of Technology | Water-soluble fluorescent nanocrystals |
US6617583B1 (en) * | 1998-09-18 | 2003-09-09 | Massachusetts Institute Of Technology | Inventory control |
US6608439B1 (en) * | 1998-09-22 | 2003-08-19 | Emagin Corporation | Inorganic-based color conversion matrix element for organic color display devices and method of fabrication |
JP2000104058A (ja) * | 1998-09-28 | 2000-04-11 | Sony Corp | 発光体の製造方法 |
JP3988309B2 (ja) * | 1999-01-14 | 2007-10-10 | ソニー株式会社 | 蛍光体及びその製造方法 |
US6348295B1 (en) * | 1999-03-26 | 2002-02-19 | Massachusetts Institute Of Technology | Methods for manufacturing electronic and electromechanical elements and devices by thin-film deposition and imaging |
JP4877675B2 (ja) * | 1999-06-28 | 2012-02-15 | 株式会社半導体エネルギー研究所 | 電気光学装置の作製方法 |
TW556357B (en) | 1999-06-28 | 2003-10-01 | Semiconductor Energy Lab | Method of manufacturing an electro-optical device |
US6249104B1 (en) * | 1999-07-01 | 2001-06-19 | General Electric Company | Cutout start switch heating |
JP2001113772A (ja) * | 1999-08-11 | 2001-04-24 | Canon Inc | 画像形成装置 |
JP2001274528A (ja) * | 2000-01-21 | 2001-10-05 | Fujitsu Ltd | 薄膜デバイスの基板間転写方法 |
US6797412B1 (en) * | 2000-04-11 | 2004-09-28 | University Of Connecticut | Full color display structures using pseudomorphic cladded quantum dot nanophosphor thin films |
US6887332B1 (en) * | 2000-04-21 | 2005-05-03 | International Business Machines Corporation | Patterning solution deposited thin films with self-assembled monolayers |
US7491286B2 (en) * | 2000-04-21 | 2009-02-17 | International Business Machines Corporation | Patterning solution deposited thin films with self-assembled monolayers |
US7323143B2 (en) * | 2000-05-25 | 2008-01-29 | President And Fellows Of Harvard College | Microfluidic systems including three-dimensionally arrayed channel networks |
US7517546B2 (en) * | 2000-09-05 | 2009-04-14 | Bayer Technology Services Gmbh | Method for precipitating mono and multiple layers of organophosphoric and organophosphonic acids and the salts thereof in addition to use thereof |
US6576291B2 (en) * | 2000-12-08 | 2003-06-10 | Massachusetts Institute Of Technology | Preparation of nanocrystallites |
JP2002192540A (ja) * | 2000-12-22 | 2002-07-10 | Mitsubishi Rayon Co Ltd | 転写ロールおよびその加工方法、それを用いた光学シートの製造方法 |
EP1386523A1 (en) | 2001-05-09 | 2004-02-04 | Gakoreatech | Manufacturing process of self-luminous and flexible fabric |
US6896872B2 (en) | 2001-06-27 | 2005-05-24 | Svetlana A. Dambinova | Rapid multiple panel of biomarkers in laboratory blood tests for TIA/stroke |
US6846565B2 (en) * | 2001-07-02 | 2005-01-25 | Board Of Regents, The University Of Texas System | Light-emitting nanoparticles and method of making same |
US7276184B2 (en) * | 2001-07-12 | 2007-10-02 | Eastman Kodak Company | Surfactant assisted nanomaterial generation process |
EP1409240B1 (en) * | 2001-07-20 | 2012-05-09 | Life Technologies Corporation | Luminescent nanoparticles and methods for their preparation |
JP5055672B2 (ja) | 2001-07-31 | 2012-10-24 | 大日本印刷株式会社 | 薄膜パターン形成用スタンプ |
JP4340405B2 (ja) * | 2001-08-09 | 2009-10-07 | 富士フイルム株式会社 | 有機el素子の製造方法及び有機el素子 |
JP2005502176A (ja) * | 2001-09-04 | 2005-01-20 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 量子ドットを有するエレクトロルミネセント装置 |
AU2002337793A1 (en) * | 2001-10-02 | 2003-05-12 | Northwestern University | Protein and peptide nanoarrays |
US6682189B2 (en) * | 2001-10-09 | 2004-01-27 | Nexpress Solutions Llc | Ink jet imaging via coagulation on an intermediate member |
US20030152703A1 (en) * | 2001-10-31 | 2003-08-14 | Hammond Paula T. | Production of chemically patterned surfaces using polymer-on-polymer stamping |
US7220452B2 (en) * | 2001-10-31 | 2007-05-22 | Massachusetts Institute Of Technology | Multilayer transfer patterning using polymer-on-polymer stamping |
KR100492729B1 (ko) * | 2001-11-07 | 2005-06-07 | 엘지.필립스 엘시디 주식회사 | 인쇄방식에 의한 패턴형성방법 |
US6639527B2 (en) * | 2001-11-19 | 2003-10-28 | Hewlett-Packard Development Company, L.P. | Inkjet printing system with an intermediate transfer member between the print engine and print medium |
US6494570B1 (en) * | 2001-12-04 | 2002-12-17 | Xerox Corporation | Controlling gloss in an offset ink jet printer |
US20030103123A1 (en) * | 2001-12-04 | 2003-06-05 | Xerox Corporation | Continuous transfer and fusing application system |
JP2003173878A (ja) * | 2001-12-05 | 2003-06-20 | Mitsubishi Chemicals Corp | 交流印可型エレクトロルミネッセンス素子 |
US6682872B2 (en) * | 2002-01-22 | 2004-01-27 | International Business Machines Corporation | UV-curable compositions and method of use thereof in microelectronics |
JP3962862B2 (ja) * | 2002-02-27 | 2007-08-22 | 日立造船株式会社 | カーボンナノチューブを用いた導電性材料およびその製造方法 |
FI20020614A (fi) * | 2002-03-28 | 2003-09-29 | Nokia Corp | Henkilökohtainen viestinlaite, jossa on kaksi osaa ja korostuneet mahdollisuudet itseilmaisuun |
EP2902464B1 (en) * | 2002-03-29 | 2019-09-18 | Massachusetts Institute Of Technology | Light emitting device including semiconductor nanocrystals |
US6972516B2 (en) * | 2002-06-14 | 2005-12-06 | University Of Cincinnati | Photopump-enhanced electroluminescent devices |
KR100864758B1 (ko) * | 2002-06-19 | 2008-10-22 | 오리온오엘이디 주식회사 | 풀 컬러 유기 전기 발광 소자 |
DE10229118A1 (de) * | 2002-06-28 | 2004-01-29 | Infineon Technologies Ag | Verfahren zur kostengünstigen Strukturierung von leitfähigen Polymeren mittels Definition von hydrophilen und hydrophoben Bereichen |
US7319709B2 (en) * | 2002-07-23 | 2008-01-15 | Massachusetts Institute Of Technology | Creating photon atoms |
AU2003304433A1 (en) | 2002-08-02 | 2005-03-07 | Ultradots, Inc. | Quantum dots, nanocomposite materials with quantum dots, optical devices with quantum dots, and related fabrication methods |
JP4197109B2 (ja) | 2002-08-06 | 2008-12-17 | 静雄 藤田 | 照明装置 |
US7332369B2 (en) * | 2002-08-06 | 2008-02-19 | Merck Patent Gmbh | Organic electronic devices |
CA2495309C (en) * | 2002-08-13 | 2011-11-08 | Massachusetts Institute Of Technology | Semiconductor nanocrystal heterostructures |
JP2004178930A (ja) * | 2002-11-26 | 2004-06-24 | Sony Corp | 発光素子およびこれを用いた表示装置 |
US6902269B2 (en) * | 2002-12-09 | 2005-06-07 | Xerox Corporation | Process for curing marking component with nano-size zinc oxide filler |
US7183146B2 (en) * | 2003-01-17 | 2007-02-27 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
US6918338B2 (en) * | 2003-01-30 | 2005-07-19 | Hewlett-Packard Development Company, L.P. | Printing system |
JP2004237545A (ja) * | 2003-02-05 | 2004-08-26 | Komuratekku:Kk | 層形成用凸版 |
JP2004253175A (ja) * | 2003-02-18 | 2004-09-09 | Mitsubishi Chemicals Corp | 電界発光素子 |
US20050118338A1 (en) * | 2003-05-02 | 2005-06-02 | Johns Hopkins University | Control of the spatial distribution and sorting of micro-or nano-meter or molecular scale objects on patterned surfaces |
US7265037B2 (en) * | 2003-06-20 | 2007-09-04 | The Regents Of The University Of California | Nanowire array and nanowire solar cells and methods for forming the same |
US20040265622A1 (en) * | 2003-06-24 | 2004-12-30 | Eastman Kodak Company | Light emitting display |
US6998008B2 (en) * | 2003-07-15 | 2006-02-14 | Lexmark International, Inc. | Method and apparatus for attaching an ink jet filter to an ink cartridge |
US7065285B2 (en) * | 2003-12-01 | 2006-06-20 | Lucent Technologies Inc. | Polymeric compositions comprising quantum dots, optical devices comprising these compositions and methods for preparing same |
US7253452B2 (en) * | 2004-03-08 | 2007-08-07 | Massachusetts Institute Of Technology | Blue light emitting semiconductor nanocrystal materials |
US20060081557A1 (en) * | 2004-10-18 | 2006-04-20 | Molecular Imprints, Inc. | Low-k dielectric functional imprinting materials |
US10225906B2 (en) | 2004-10-22 | 2019-03-05 | Massachusetts Institute Of Technology | Light emitting device including semiconductor nanocrystals |
US7799422B2 (en) * | 2004-11-03 | 2010-09-21 | Massachusetts Institute Of Technology | Absorbing film |
PL2546192T3 (pl) | 2005-02-16 | 2020-05-18 | Massachusetts Institute Of Technology | Urządzenie emitujące światło, zawierające nanokryształy półprzewodnikowe |
ITUB20152644A1 (it) | 2015-07-30 | 2017-01-30 | Metal Work Spa | Sistema di elettrovalvole a portata maggiorata. |
-
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0834116A (ja) * | 1994-07-22 | 1996-02-06 | Fuji Xerox Co Ltd | インクジェット記録装置 |
JP2002540591A (ja) * | 1998-12-15 | 2002-11-26 | イー−インク コーポレイション | プラスチック基板へのトランジスタアレイの印刷方法 |
JP2002060979A (ja) * | 2000-04-18 | 2002-02-28 | Internatl Business Mach Corp <Ibm> | マイクロコンタクト・プリンティングによるパターン化されたインジウム亜鉛酸化物フィルムおよびインジウムすず酸化物フィルムの形成方法 |
JP2005534190A (ja) * | 2002-07-26 | 2005-11-10 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | マイクロコンタクトプリント法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013080741A1 (ja) * | 2011-11-30 | 2013-06-06 | セントラル硝子株式会社 | 光重合性組成物並びにそれを用いたパターン形成方法 |
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EP2498274A1 (en) | 2012-09-12 |
KR101184300B1 (ko) | 2012-09-21 |
JP2008518401A (ja) | 2008-05-29 |
KR20070085282A (ko) | 2007-08-27 |
KR20070088623A (ko) | 2007-08-29 |
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US20060196375A1 (en) | 2006-09-07 |
WO2006047215A2 (en) | 2006-05-04 |
WO2006135435A2 (en) | 2006-12-21 |
TWI462781B (zh) | 2014-12-01 |
JP5491698B2 (ja) | 2014-05-14 |
JP2012134506A (ja) | 2012-07-12 |
US10225906B2 (en) | 2019-03-05 |
ATE470959T1 (de) | 2010-06-15 |
EP1803174B1 (en) | 2010-06-09 |
KR20130133081A (ko) | 2013-12-05 |
EP2254393B1 (en) | 2016-05-11 |
KR101369205B1 (ko) | 2014-03-04 |
WO2006135435A3 (en) | 2007-02-08 |
TWI440205B (zh) | 2014-06-01 |
EP2498274B1 (en) | 2014-09-17 |
DE602005021808D1 (de) | 2010-07-22 |
EP1807863A2 (en) | 2007-07-18 |
EP2254393A1 (en) | 2010-11-24 |
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