JP2008515222A - 誘電体層表面処理を有する電子デバイスの製造方法 - Google Patents

誘電体層表面処理を有する電子デバイスの製造方法 Download PDF

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Publication number
JP2008515222A
JP2008515222A JP2007534599A JP2007534599A JP2008515222A JP 2008515222 A JP2008515222 A JP 2008515222A JP 2007534599 A JP2007534599 A JP 2007534599A JP 2007534599 A JP2007534599 A JP 2007534599A JP 2008515222 A JP2008515222 A JP 2008515222A
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Prior art keywords
layer
polymer layer
plasma
monomer
styrene
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Japanese (ja)
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JP2008515222A5 (https=
Inventor
ディー． ダンバー，ティモシー
ダブリュ． ケリー，トミー
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3M Innovative Properties Co
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3M Innovative Properties Co
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Publication of JP2008515222A publication Critical patent/JP2008515222A/ja
Publication of JP2008515222A5 publication Critical patent/JP2008515222A5/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
    • H10P14/687—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC the materials being fluorocarbon compounds, e.g. (CHxFy) n or polytetrafluoroethylene

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  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
JP2007534599A 2004-09-30 2005-08-26 誘電体層表面処理を有する電子デバイスの製造方法 Withdrawn JP2008515222A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/954,413 US7399668B2 (en) 2004-09-30 2004-09-30 Method for making electronic devices having a dielectric layer surface treatment
PCT/US2005/030412 WO2006039019A1 (en) 2004-09-30 2005-08-26 Method for making electronic devices having a dielectric layer surface treatment

Publications (2)

Publication Number Publication Date
JP2008515222A true JP2008515222A (ja) 2008-05-08
JP2008515222A5 JP2008515222A5 (https=) 2008-09-18

Family

ID=35427645

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007534599A Withdrawn JP2008515222A (ja) 2004-09-30 2005-08-26 誘電体層表面処理を有する電子デバイスの製造方法

Country Status (7)

Country Link
US (2) US7399668B2 (https=)
EP (1) EP1800358A1 (https=)
JP (1) JP2008515222A (https=)
KR (1) KR20070072897A (https=)
CN (1) CN100593249C (https=)
CA (1) CA2582332A1 (https=)
WO (1) WO2006039019A1 (https=)

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JP2022109293A (ja) * 2017-04-18 2022-07-27 東京エレクトロン株式会社 被処理体を処理する方法

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JP2012511106A (ja) * 2008-12-05 2012-05-17 ロータス アプライド テクノロジー エルエルシー 改善されたバリア層の性質を有する薄膜の高速成膜
US8871628B2 (en) * 2009-01-21 2014-10-28 Veeco Ald Inc. Electrode structure, device comprising the same and method for forming electrode structure
KR101172147B1 (ko) 2009-02-23 2012-08-07 시너스 테크놀리지, 인코포레이티드 플라즈마에 의한 라디칼을 이용한 박막 형성 방법
JP2010244868A (ja) * 2009-04-07 2010-10-28 Sony Corp 有機電界発光素子および表示装置
US8758512B2 (en) * 2009-06-08 2014-06-24 Veeco Ald Inc. Vapor deposition reactor and method for forming thin film
KR200448504Y1 (ko) * 2009-07-14 2010-04-21 주식회사 협진아이엔씨 휴대폰용 접속단자
TWI394305B (zh) * 2009-10-08 2013-04-21 Nat Univ Tsing Hua 有機薄膜電晶體之製備方法以及有機薄膜電晶體之閘極介電層表面處理方法
US8637123B2 (en) * 2009-12-29 2014-01-28 Lotus Applied Technology, Llc Oxygen radical generation for radical-enhanced thin film deposition
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US8877300B2 (en) 2011-02-16 2014-11-04 Veeco Ald Inc. Atomic layer deposition using radicals of gas mixture
US9163310B2 (en) * 2011-02-18 2015-10-20 Veeco Ald Inc. Enhanced deposition of layer on substrate using radicals
KR102046130B1 (ko) * 2012-03-06 2019-11-18 셈블란트 리미티드 코팅된 전기 어셈블리
BE1023998B1 (nl) 2015-06-09 2017-10-26 P2I Ltd Coatings
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CN111372692A (zh) * 2018-05-04 2020-07-03 美商菲沃泰科技公司 电子设备的纳米涂层保护方法
GB201814231D0 (en) * 2018-08-31 2018-10-17 Univ Surrey Apparatus for forming a poly(p-xylylene) film on a component
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Publication number Priority date Publication date Assignee Title
JP2022109293A (ja) * 2017-04-18 2022-07-27 東京エレクトロン株式会社 被処理体を処理する方法
JP7320646B2 (ja) 2017-04-18 2023-08-03 東京エレクトロン株式会社 被処理体を処理する方法

Also Published As

Publication number Publication date
CN100593249C (zh) 2010-03-03
US20060068519A1 (en) 2006-03-30
CN101057346A (zh) 2007-10-17
US7399668B2 (en) 2008-07-15
WO2006039019A1 (en) 2006-04-13
EP1800358A1 (en) 2007-06-27
CA2582332A1 (en) 2006-04-13
KR20070072897A (ko) 2007-07-06
US20080145701A1 (en) 2008-06-19

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