CA2582332A1 - Method for making electronic devices having a dielectric layer surface treatment - Google Patents

Method for making electronic devices having a dielectric layer surface treatment Download PDF

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Publication number
CA2582332A1
CA2582332A1 CA002582332A CA2582332A CA2582332A1 CA 2582332 A1 CA2582332 A1 CA 2582332A1 CA 002582332 A CA002582332 A CA 002582332A CA 2582332 A CA2582332 A CA 2582332A CA 2582332 A1 CA2582332 A1 CA 2582332A1
Authority
CA
Canada
Prior art keywords
polymeric layer
layer
plasma
monomers
dielectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA002582332A
Other languages
English (en)
French (fr)
Inventor
Timothy D. Dunbar
Tommie W. Kelley
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
3M Innovative Properties Co
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of CA2582332A1 publication Critical patent/CA2582332A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
    • H10P14/687—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC the materials being fluorocarbon compounds, e.g. (CHxFy) n or polytetrafluoroethylene

Landscapes

  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
CA002582332A 2004-09-30 2005-08-26 Method for making electronic devices having a dielectric layer surface treatment Abandoned CA2582332A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/954,413 2004-09-30
US10/954,413 US7399668B2 (en) 2004-09-30 2004-09-30 Method for making electronic devices having a dielectric layer surface treatment
PCT/US2005/030412 WO2006039019A1 (en) 2004-09-30 2005-08-26 Method for making electronic devices having a dielectric layer surface treatment

Publications (1)

Publication Number Publication Date
CA2582332A1 true CA2582332A1 (en) 2006-04-13

Family

ID=35427645

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002582332A Abandoned CA2582332A1 (en) 2004-09-30 2005-08-26 Method for making electronic devices having a dielectric layer surface treatment

Country Status (7)

Country Link
US (2) US7399668B2 (https=)
EP (1) EP1800358A1 (https=)
JP (1) JP2008515222A (https=)
KR (1) KR20070072897A (https=)
CN (1) CN100593249C (https=)
CA (1) CA2582332A1 (https=)
WO (1) WO2006039019A1 (https=)

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JP2010244868A (ja) * 2009-04-07 2010-10-28 Sony Corp 有機電界発光素子および表示装置
US8758512B2 (en) * 2009-06-08 2014-06-24 Veeco Ald Inc. Vapor deposition reactor and method for forming thin film
KR200448504Y1 (ko) * 2009-07-14 2010-04-21 주식회사 협진아이엔씨 휴대폰용 접속단자
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US8637123B2 (en) * 2009-12-29 2014-01-28 Lotus Applied Technology, Llc Oxygen radical generation for radical-enhanced thin film deposition
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US8877300B2 (en) 2011-02-16 2014-11-04 Veeco Ald Inc. Atomic layer deposition using radicals of gas mixture
US9163310B2 (en) * 2011-02-18 2015-10-20 Veeco Ald Inc. Enhanced deposition of layer on substrate using radicals
KR102046130B1 (ko) * 2012-03-06 2019-11-18 셈블란트 리미티드 코팅된 전기 어셈블리
BE1023998B1 (nl) 2015-06-09 2017-10-26 P2I Ltd Coatings
GB201621177D0 (en) 2016-12-13 2017-01-25 Semblant Ltd Protective coating
TWI805162B (zh) * 2017-04-18 2023-06-11 日商東京威力科創股份有限公司 被處理體之處理裝置
CN111372692A (zh) * 2018-05-04 2020-07-03 美商菲沃泰科技公司 电子设备的纳米涂层保护方法
GB201814231D0 (en) * 2018-08-31 2018-10-17 Univ Surrey Apparatus for forming a poly(p-xylylene) film on a component
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Also Published As

Publication number Publication date
CN100593249C (zh) 2010-03-03
US20060068519A1 (en) 2006-03-30
CN101057346A (zh) 2007-10-17
JP2008515222A (ja) 2008-05-08
US7399668B2 (en) 2008-07-15
WO2006039019A1 (en) 2006-04-13
EP1800358A1 (en) 2007-06-27
KR20070072897A (ko) 2007-07-06
US20080145701A1 (en) 2008-06-19

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Legal Events

Date Code Title Description
FZDE Discontinued
FZDE Discontinued

Effective date: 20090826