CN100593249C - 制造具有介电层表面处理的电子器件的方法 - Google Patents

制造具有介电层表面处理的电子器件的方法 Download PDF

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Publication number
CN100593249C
CN100593249C CN200580039067A CN200580039067A CN100593249C CN 100593249 C CN100593249 C CN 100593249C CN 200580039067 A CN200580039067 A CN 200580039067A CN 200580039067 A CN200580039067 A CN 200580039067A CN 100593249 C CN100593249 C CN 100593249C
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China
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plasma
polymeric layer
layer
dielectric
monomer
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Expired - Fee Related
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CN200580039067A
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Chinese (zh)
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CN101057346A (zh
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蒂莫西·D·邓巴
托米·W·凯利
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3M Innovative Properties Co
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3M Innovative Properties Co
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
    • H10P14/687—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC the materials being fluorocarbon compounds, e.g. (CHxFy) n or polytetrafluoroethylene

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  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
CN200580039067A 2004-09-30 2005-08-26 制造具有介电层表面处理的电子器件的方法 Expired - Fee Related CN100593249C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/954,413 2004-09-30
US10/954,413 US7399668B2 (en) 2004-09-30 2004-09-30 Method for making electronic devices having a dielectric layer surface treatment

Publications (2)

Publication Number Publication Date
CN101057346A CN101057346A (zh) 2007-10-17
CN100593249C true CN100593249C (zh) 2010-03-03

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CN200580039067A Expired - Fee Related CN100593249C (zh) 2004-09-30 2005-08-26 制造具有介电层表面处理的电子器件的方法

Country Status (7)

Country Link
US (2) US7399668B2 (https=)
EP (1) EP1800358A1 (https=)
JP (1) JP2008515222A (https=)
KR (1) KR20070072897A (https=)
CN (1) CN100593249C (https=)
CA (1) CA2582332A1 (https=)
WO (1) WO2006039019A1 (https=)

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US8851012B2 (en) * 2008-09-17 2014-10-07 Veeco Ald Inc. Vapor deposition reactor using plasma and method for forming thin film using the same
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US8871628B2 (en) * 2009-01-21 2014-10-28 Veeco Ald Inc. Electrode structure, device comprising the same and method for forming electrode structure
KR101172147B1 (ko) 2009-02-23 2012-08-07 시너스 테크놀리지, 인코포레이티드 플라즈마에 의한 라디칼을 이용한 박막 형성 방법
JP2010244868A (ja) * 2009-04-07 2010-10-28 Sony Corp 有機電界発光素子および表示装置
US8758512B2 (en) * 2009-06-08 2014-06-24 Veeco Ald Inc. Vapor deposition reactor and method for forming thin film
KR200448504Y1 (ko) * 2009-07-14 2010-04-21 주식회사 협진아이엔씨 휴대폰용 접속단자
TWI394305B (zh) * 2009-10-08 2013-04-21 Nat Univ Tsing Hua 有機薄膜電晶體之製備方法以及有機薄膜電晶體之閘極介電層表面處理方法
US8637123B2 (en) * 2009-12-29 2014-01-28 Lotus Applied Technology, Llc Oxygen radical generation for radical-enhanced thin film deposition
US8771791B2 (en) 2010-10-18 2014-07-08 Veeco Ald Inc. Deposition of layer using depositing apparatus with reciprocating susceptor
US8877300B2 (en) 2011-02-16 2014-11-04 Veeco Ald Inc. Atomic layer deposition using radicals of gas mixture
US9163310B2 (en) * 2011-02-18 2015-10-20 Veeco Ald Inc. Enhanced deposition of layer on substrate using radicals
KR102046130B1 (ko) * 2012-03-06 2019-11-18 셈블란트 리미티드 코팅된 전기 어셈블리
BE1023998B1 (nl) 2015-06-09 2017-10-26 P2I Ltd Coatings
GB201621177D0 (en) 2016-12-13 2017-01-25 Semblant Ltd Protective coating
TWI805162B (zh) * 2017-04-18 2023-06-11 日商東京威力科創股份有限公司 被處理體之處理裝置
CN111372692A (zh) * 2018-05-04 2020-07-03 美商菲沃泰科技公司 电子设备的纳米涂层保护方法
GB201814231D0 (en) * 2018-08-31 2018-10-17 Univ Surrey Apparatus for forming a poly(p-xylylene) film on a component
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Also Published As

Publication number Publication date
US20060068519A1 (en) 2006-03-30
CN101057346A (zh) 2007-10-17
JP2008515222A (ja) 2008-05-08
US7399668B2 (en) 2008-07-15
WO2006039019A1 (en) 2006-04-13
EP1800358A1 (en) 2007-06-27
CA2582332A1 (en) 2006-04-13
KR20070072897A (ko) 2007-07-06
US20080145701A1 (en) 2008-06-19

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