JP2008509541A - 化学的に向上させたパッケージシンギュレーション法 - Google Patents
化学的に向上させたパッケージシンギュレーション法 Download PDFInfo
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Abstract
Description
共通の基材の一部として作製された個々の電子パッケージのシンギュレーションは、マスクパターニングおよび化学曝露を物理的ソーイングと組み合わせることによって達成される。本発明のシンギュレーション法の一つの態様では、基材のパッケージ間部分への最初の浅いソーカットが、下にある金属を後続の化学エッチング工程のために露出させる。他の態様では、別個のフォトレジストマスクを基材上にパターニングして、パッケージ間領域の金属を化学エッチングのために選択的に露出させることもできる。
大きめの基材の一部として作製された個々の電子パッケージの物理的シンギュレーションは、ソーイングを化学曝露およびマスクのパターニングと組み合わせることによって達成される。本発明のシンギュレーション法の一つの態様では、基材のパッケージ間部分への最初の浅いソーカットが、下にある金属を後続の化学エッチング工程のために露出させる。本発明のシンギュレーション法の他の態様では、別個のフォトレジストマスクを基材上にパターニングして、パッケージ間領域の金属を化学エッチングのために選択的に露出させてもよい。
Cu+(NH4)2S2O8 → CuSO4+(NH4)S2O4
Cu+H2O2+H2SO4 → Cu2SO4+2H2O
(図1B)図1AのパッケージをB−B'線から見た断面図である。
(図1C)シンギュレーション前のパッケージ基材の略平面図である。
(図1D)図1Cの1D−1D'線から見た略断面図である。
(図1E〜H)従来のパッケージシンギュレーション法の様々な連続段階を示す、図1Cの1E−1E'線から見た略断面図である。
(図2A〜C)本発明のパッケージシンギュレーション法の一態様の様々な連続段階を示す、図1Cの1E−1E'線から見た略断面図である。
(図3A)従来のパッケージの他の形態の略断面図である。
(図3B〜3E)図3Aのパッケージのシンギュレーションのための、本発明の方法の一態様の様々な連続段階を示す略断面図である。
(図4A〜F)本発明のパッケージシンギュレーション法の他の態様の連続段階を示す略断面図である。
Claims (18)
- マスクをパターニングして、作製された共通のパッケージ基材のパッケージ間領域を露出させる工程と、
パッケージ間領域の金属を化学曝露によって除去する工程と、
その後、物理的ソーイングによってパッケージ間領域中に残存する材料を除去する工程とを含む、
パッケージシンギュレーション法。 - マスクをパターニングする工程が、最初にパッケージ間領域にソーイングを行い金属を露出させることを含む、請求項1記載の方法。
- 露出される金属が銅を含む、請求項2記載の方法。
- 過硫酸イオンおよび触媒の水溶液、ならびに硫酸および過酸化水素とリン酸との混合物からなる群より選択される化学エッチング液への曝露によって金属を除去する、請求項3記載の方法。
- マスクがプラスチック成形物および第二の金属を含む、請求項2記載の方法。
- 第二の金属が、はんだおよびNi−Pd−Au積層膜からなる群より選択される、請求項5記載の方法。
- 残存する材料がプラスチック成形物を含む、請求項5記載の方法。
- 残存する材料をソーイングする前にパッケージにストリップテストを行う工程をさらに含む、請求項7記載の方法。
- 残存する材料がプラスチック成形物上に位置する第二の金属をさらに含み、第二の金属が銀およびNi−Pd−Au積層膜からなる群より選択される、請求項7記載の方法。
- 第二の金属をソーイングした後かつプラスチック成形物をソーイングする前にパッケージにストリップテストを行う工程をさらに含む、請求項9記載の方法。
- 最初のソーイング工程の前に基材上にフォトレジスト層を形成する工程をさらに含む、請求項2記載の方法。
- 残存する材料がプラスチック成形物上に位置する第二の金属をさらに含み、プラスチック成形物をソーイングする前にパッケージ間領域内の第二の金属を化学エッチングする工程をさらに含む、請求項11記載の方法。
- マスクをパターニングする工程が、フォトレジスト層を露光および現像することを含む、請求項1記載の方法。
- 金属を除去する工程が、表面金属を第一の化学エッチング液に曝露したのち、下にある金属を第二の化学エッチング液に曝露することを含む、請求項13記載の方法。
- 下にある金属が銅を含み、
第二の化学エッチング液が、過硫酸イオンおよび触媒の水溶液、ならびに硫酸および過酸化水素とリン酸との混合物からなる群より選択される、請求項14記載の方法。 - 表面金属が、はんだおよびNi−Pd−Au積層膜からなる群より選択される、請求項14記載の方法。
- 現像および露光したフォトレジストを除去する工程をさらに含む、請求項13記載の方法。
- ウェット有機洗浄剤への曝露によってフォトレジストを除去する、請求項17記載の方法。
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US10/843,867 US7553700B2 (en) | 2004-05-11 | 2004-05-11 | Chemical-enhanced package singulation process |
PCT/US2005/016482 WO2005112102A2 (en) | 2004-05-11 | 2005-05-10 | Chemical-enhanced package singulation process |
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JP2008218469A (ja) * | 2007-02-28 | 2008-09-18 | Rohm Co Ltd | 半導体装置の製造方法 |
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JP4643464B2 (ja) * | 2006-02-13 | 2011-03-02 | 株式会社ディスコ | パッケージ基板の分割方法および分割装置 |
US7932587B2 (en) * | 2007-09-07 | 2011-04-26 | Infineon Technologies Ag | Singulated semiconductor package |
TWI601242B (zh) * | 2010-01-18 | 2017-10-01 | 半導體組件工業公司 | 半導體晶片分割方法 |
KR20200053096A (ko) * | 2018-11-08 | 2020-05-18 | 삼성전자주식회사 | 반도체 칩의 세정 방법 및 이를 수행하기 위한 장치 |
US10937709B2 (en) | 2019-01-11 | 2021-03-02 | Infineon Technologies Ag | Substrates for semiconductor packages |
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WO2005112102A2 (en) | 2005-11-24 |
CN101292330A (zh) | 2008-10-22 |
JP4599399B2 (ja) | 2010-12-15 |
US7553700B2 (en) | 2009-06-30 |
WO2005112102A3 (en) | 2007-12-06 |
CN101292330B (zh) | 2010-06-02 |
US20050255634A1 (en) | 2005-11-17 |
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