JP2008505487A5 - - Google Patents
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- Publication number
- JP2008505487A5 JP2008505487A5 JP2007519217A JP2007519217A JP2008505487A5 JP 2008505487 A5 JP2008505487 A5 JP 2008505487A5 JP 2007519217 A JP2007519217 A JP 2007519217A JP 2007519217 A JP2007519217 A JP 2007519217A JP 2008505487 A5 JP2008505487 A5 JP 2008505487A5
- Authority
- JP
- Japan
- Prior art keywords
- region
- conductivity type
- conductive layer
- electrically connected
- schottky junction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002019 doping agent Substances 0.000 claims 2
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/881,678 | 2004-06-30 | ||
| US10/881,678 US7355260B2 (en) | 2004-06-30 | 2004-06-30 | Schottky device and method of forming |
| PCT/US2005/017704 WO2006007143A2 (en) | 2004-06-30 | 2005-05-19 | Schottky device and method of forming |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008505487A JP2008505487A (ja) | 2008-02-21 |
| JP2008505487A5 true JP2008505487A5 (enExample) | 2008-07-10 |
| JP4975618B2 JP4975618B2 (ja) | 2012-07-11 |
Family
ID=35512975
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007519217A Expired - Lifetime JP4975618B2 (ja) | 2004-06-30 | 2005-05-19 | ショットキー接合を有するデバイス |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7355260B2 (enExample) |
| JP (1) | JP4975618B2 (enExample) |
| KR (1) | KR20070026690A (enExample) |
| CN (1) | CN100576569C (enExample) |
| TW (1) | TWI358835B (enExample) |
| WO (1) | WO2006007143A2 (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6704143B1 (en) | 2000-10-23 | 2004-03-09 | Adc Telecommunications, Inc. | Method and apparatus for adjusting an optical element to achieve a precise length |
| US7550804B2 (en) * | 2006-03-27 | 2009-06-23 | Freescale Semiconductor, Inc. | Semiconductor device and method for forming the same |
| US7777257B2 (en) * | 2007-02-14 | 2010-08-17 | Freescale Semiconductor, Inc. | Bipolar Schottky diode and method |
| US8168466B2 (en) * | 2007-06-01 | 2012-05-01 | Semiconductor Components Industries, Llc | Schottky diode and method therefor |
| US7781859B2 (en) * | 2008-03-24 | 2010-08-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Schottky diode structures having deep wells for improving breakdown voltages |
| US8324705B2 (en) * | 2008-05-27 | 2012-12-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Schottky diodes having low-voltage and high-concentration rings |
| US7915704B2 (en) * | 2009-01-26 | 2011-03-29 | Freescale Semiconductor, Inc. | Schottky diode |
| US7972913B2 (en) * | 2009-05-28 | 2011-07-05 | Freescale Semiconductor, Inc. | Method for forming a Schottky diode |
| CN102347373B (zh) * | 2010-08-03 | 2013-04-17 | 旺宏电子股份有限公司 | 肖特基二极管 |
| US8878329B2 (en) * | 2010-09-17 | 2014-11-04 | United Microelectronics Corp. | High voltage device having Schottky diode |
| CN102842596B (zh) * | 2011-06-22 | 2015-05-20 | 旺宏电子股份有限公司 | 半导体结构及其制造方法 |
| JP6087520B2 (ja) * | 2011-07-13 | 2017-03-01 | キヤノン株式会社 | ダイオード素子及び検出素子 |
| US8592274B2 (en) * | 2012-03-27 | 2013-11-26 | Alpha And Omega Semiconductor Incorporated | LDMOS with accumulation enhancement implant |
| EP3460856B1 (en) * | 2017-09-26 | 2020-12-02 | ams AG | Schottky barrier diode with improved schottky contact for high voltages |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6050062B2 (ja) * | 1982-03-19 | 1985-11-06 | 三菱電機株式会社 | 半導体集積回路装置 |
| JPS5936264U (ja) * | 1982-07-27 | 1984-03-07 | サンケン電気株式会社 | シヨツトキバリア半導体装置 |
| JPS61296760A (ja) * | 1985-06-26 | 1986-12-27 | Hitachi Ltd | 半導体装置 |
| US4989058A (en) | 1985-11-27 | 1991-01-29 | North American Philips Corp. | Fast switching lateral insulated gate transistors |
| US5614755A (en) | 1993-04-30 | 1997-03-25 | Texas Instruments Incorporated | High voltage Shottky diode |
| US5483087A (en) | 1994-07-08 | 1996-01-09 | International Rectifier Corporation | Bidirectional thyristor with MOS turn-off capability with a single gate |
| US5818084A (en) | 1996-05-15 | 1998-10-06 | Siliconix Incorporated | Pseudo-Schottky diode |
| US6784489B1 (en) * | 1997-03-28 | 2004-08-31 | Stmicroelectronics, Inc. | Method of operating a vertical DMOS transistor with schottky diode body structure |
| JP2001185740A (ja) * | 1999-12-24 | 2001-07-06 | Sanyo Electric Co Ltd | 半導体装置とその製造方法 |
| US6617642B1 (en) * | 2000-02-23 | 2003-09-09 | Tripath Technology, Inc. | Field effect transistor structure for driving inductive loads |
| US6552406B1 (en) | 2000-10-03 | 2003-04-22 | International Business Machines Corporation | SiGe transistor, varactor and p-i-n velocity saturated ballasting element for BiCMOS peripheral circuits and ESD networks |
| JP4097417B2 (ja) | 2001-10-26 | 2008-06-11 | 株式会社ルネサステクノロジ | 半導体装置 |
| JP4277496B2 (ja) * | 2001-11-21 | 2009-06-10 | 富士電機デバイステクノロジー株式会社 | 半導体装置 |
-
2004
- 2004-06-30 US US10/881,678 patent/US7355260B2/en not_active Expired - Lifetime
-
2005
- 2005-05-19 JP JP2007519217A patent/JP4975618B2/ja not_active Expired - Lifetime
- 2005-05-19 CN CN200580021992A patent/CN100576569C/zh not_active Expired - Fee Related
- 2005-05-19 KR KR1020067027790A patent/KR20070026690A/ko not_active Withdrawn
- 2005-05-19 WO PCT/US2005/017704 patent/WO2006007143A2/en not_active Ceased
- 2005-06-15 TW TW094119834A patent/TWI358835B/zh not_active IP Right Cessation