JPS5936264U - シヨツトキバリア半導体装置 - Google Patents
シヨツトキバリア半導体装置Info
- Publication number
- JPS5936264U JPS5936264U JP1982113716U JP11371682U JPS5936264U JP S5936264 U JPS5936264 U JP S5936264U JP 1982113716 U JP1982113716 U JP 1982113716U JP 11371682 U JP11371682 U JP 11371682U JP S5936264 U JPS5936264 U JP S5936264U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- semiconductor
- semiconductor device
- layer
- impurity concentration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 23
- 230000004888 barrier function Effects 0.000 title claims description 5
- 230000035939 shock Effects 0.000 title 1
- 239000002184 metal Substances 0.000 claims description 2
- 239000012535 impurity Substances 0.000 claims 3
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
め要約のデータは記録されません。
Description
第1図は本考案の実施例に係わるショットキバリア半導
体装置の一部を示す断面図、第2図は第1図の装置の半
導体部分の表面を示す平面図である。第3図及び第4図
は本考案の変形例に係わるショットキバリア半導体装置
を示す平面図である。 尚図面に用いられている符号に於いて、1は第1の半導
体層、2は第2の半導体層、3は第3の半導体層、4は
第4の半導体層、5は金属層である。 第2図 ′ 第4図
体装置の一部を示す断面図、第2図は第1図の装置の半
導体部分の表面を示す平面図である。第3図及び第4図
は本考案の変形例に係わるショットキバリア半導体装置
を示す平面図である。 尚図面に用いられている符号に於いて、1は第1の半導
体層、2は第2の半導体層、3は第3の半導体層、4は
第4の半導体層、5は金属層である。 第2図 ′ 第4図
Claims (1)
- 【実用新案登録請求の範囲】 n型又はp型の第1の導電型を有すると共に高不純物濃
度を有する第1の半導体層と、前記第1の導電型を有す
ると共に前記第1の半導体層の不純物濃度よりも低い不
純物濃度を有して前記第1の半導体層の上に形成された
第、29半導体層と、 前記第1の導電型を有すると共に前記第2の半導体層の
不純物濃度よりも低い不純物濃度を有して前記第2の半
導体層の上に形成された第3の半導体層と、 前記第8の半導体層又は前記第2及び第3の半導体層に
よって囲まれるように形成され且つ半導体表面に前記第
3の半導体層と交互に露呈するように形成された前記第
1の導電型と反対の第2の一導電型の第4の半導体層と
、 前記第3の半導体層とショットキバリアを形成し且つ前
記第4の半導体層とオーミックコンタクトを形成する金
属層と を具備していることを特徴とするショットキバリア半導
体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1982113716U JPS5936264U (ja) | 1982-07-27 | 1982-07-27 | シヨツトキバリア半導体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1982113716U JPS5936264U (ja) | 1982-07-27 | 1982-07-27 | シヨツトキバリア半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5936264U true JPS5936264U (ja) | 1984-03-07 |
JPH0229729Y2 JPH0229729Y2 (ja) | 1990-08-09 |
Family
ID=30263134
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1982113716U Granted JPS5936264U (ja) | 1982-07-27 | 1982-07-27 | シヨツトキバリア半導体装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5936264U (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03105975A (ja) * | 1989-09-20 | 1991-05-02 | Hitachi Ltd | 半導体整流ダイオード及びそれを使つた電源装置並びに電子計算機 |
JP2008505487A (ja) * | 2004-06-30 | 2008-02-21 | フリースケール セミコンダクター インコーポレイテッド | ショットキー素子及びその形成方法 |
JP2009535849A (ja) * | 2006-04-29 | 2009-10-01 | アルファ アンド オメガ セミコンダクター,リミテッド | 集積化mosfet−ショットキーデバイスのレイアウトに影響を与えずにショットキーブレークダウン電圧(bv)を高める |
JP2018074170A (ja) * | 2011-05-18 | 2018-05-10 | ローム株式会社 | 半導体装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS522446A (en) * | 1975-06-24 | 1977-01-10 | Ushio Inc | Information reading apparatus |
JPS528781A (en) * | 1975-07-10 | 1977-01-22 | Mitsubishi Electric Corp | Schottky barrier diode |
JPS5224465A (en) * | 1975-08-20 | 1977-02-23 | Sanken Electric Co Ltd | Schottky barrier semiconductor device |
JPS5737886A (en) * | 1980-08-20 | 1982-03-02 | Hitachi Ltd | Semiconductor device |
-
1982
- 1982-07-27 JP JP1982113716U patent/JPS5936264U/ja active Granted
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS522446A (en) * | 1975-06-24 | 1977-01-10 | Ushio Inc | Information reading apparatus |
JPS528781A (en) * | 1975-07-10 | 1977-01-22 | Mitsubishi Electric Corp | Schottky barrier diode |
JPS5224465A (en) * | 1975-08-20 | 1977-02-23 | Sanken Electric Co Ltd | Schottky barrier semiconductor device |
JPS5737886A (en) * | 1980-08-20 | 1982-03-02 | Hitachi Ltd | Semiconductor device |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03105975A (ja) * | 1989-09-20 | 1991-05-02 | Hitachi Ltd | 半導体整流ダイオード及びそれを使つた電源装置並びに電子計算機 |
JP2008505487A (ja) * | 2004-06-30 | 2008-02-21 | フリースケール セミコンダクター インコーポレイテッド | ショットキー素子及びその形成方法 |
JP2009535849A (ja) * | 2006-04-29 | 2009-10-01 | アルファ アンド オメガ セミコンダクター,リミテッド | 集積化mosfet−ショットキーデバイスのレイアウトに影響を与えずにショットキーブレークダウン電圧(bv)を高める |
JP2018074170A (ja) * | 2011-05-18 | 2018-05-10 | ローム株式会社 | 半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
JPH0229729Y2 (ja) | 1990-08-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5936264U (ja) | シヨツトキバリア半導体装置 | |
JPS5858361U (ja) | 半導体装置 | |
JPS58106954U (ja) | ダイオ−ド | |
JPS6113955U (ja) | 集積回路に組込まれるツエナ−ダイオ−ド | |
JPS5860951U (ja) | 半導体装置 | |
JPS6078147U (ja) | コンデンサ | |
JPS60137450U (ja) | 半導体抵抗装置 | |
JPS60125747U (ja) | コンデンサ | |
JPS60153548U (ja) | ラテラル型トランジスタ | |
JPS6139959U (ja) | 半導体装置 | |
JPS58195457U (ja) | 双方向電流サ−ジ吸収用素子 | |
JPS59180453U (ja) | 半導体装置 | |
JPS60144255U (ja) | トランジスタ | |
JPS60125751U (ja) | 半導体スイツチング素子 | |
JPS58168149U (ja) | トランジスタ | |
JPS5829852U (ja) | 半導体集積回路に組み込むツエナ−ダイオ−ド | |
JPS5989556U (ja) | 半導体抵抗装置 | |
JPH0279064U (ja) | ||
JPS60125749U (ja) | 半導体スイツチング素子 | |
JPS5887363U (ja) | 半導体装置 | |
JPS5832662U (ja) | 半導体装置 | |
JPS58106953U (ja) | トランジスタ | |
JPS5974746U (ja) | ダ−リントントランジスタ | |
JPS5856459U (ja) | 半導体装置 | |
JPS5981047U (ja) | 半導体素子 |