TWI358835B - Schottky device and method of forming - Google Patents

Schottky device and method of forming Download PDF

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Publication number
TWI358835B
TWI358835B TW094119834A TW94119834A TWI358835B TW I358835 B TWI358835 B TW I358835B TW 094119834 A TW094119834 A TW 094119834A TW 94119834 A TW94119834 A TW 94119834A TW I358835 B TWI358835 B TW I358835B
Authority
TW
Taiwan
Prior art keywords
region
conductive layer
conductivity type
electrically connected
directly
Prior art date
Application number
TW094119834A
Other languages
English (en)
Chinese (zh)
Other versions
TW200614520A (en
Inventor
Vishnu K Khemka
Vijay Parthasarathy
Ronghua Zhu
Amitava Bose
Original Assignee
Freescale Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Freescale Semiconductor Inc filed Critical Freescale Semiconductor Inc
Publication of TW200614520A publication Critical patent/TW200614520A/zh
Application granted granted Critical
Publication of TWI358835B publication Critical patent/TWI358835B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/051—Manufacture or treatment of Schottky diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 

Landscapes

  • Electrodes Of Semiconductors (AREA)
TW094119834A 2004-06-30 2005-06-15 Schottky device and method of forming TWI358835B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/881,678 US7355260B2 (en) 2004-06-30 2004-06-30 Schottky device and method of forming

Publications (2)

Publication Number Publication Date
TW200614520A TW200614520A (en) 2006-05-01
TWI358835B true TWI358835B (en) 2012-02-21

Family

ID=35512975

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094119834A TWI358835B (en) 2004-06-30 2005-06-15 Schottky device and method of forming

Country Status (6)

Country Link
US (1) US7355260B2 (enExample)
JP (1) JP4975618B2 (enExample)
KR (1) KR20070026690A (enExample)
CN (1) CN100576569C (enExample)
TW (1) TWI358835B (enExample)
WO (1) WO2006007143A2 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6704143B1 (en) 2000-10-23 2004-03-09 Adc Telecommunications, Inc. Method and apparatus for adjusting an optical element to achieve a precise length
US7550804B2 (en) * 2006-03-27 2009-06-23 Freescale Semiconductor, Inc. Semiconductor device and method for forming the same
US7777257B2 (en) * 2007-02-14 2010-08-17 Freescale Semiconductor, Inc. Bipolar Schottky diode and method
US8168466B2 (en) * 2007-06-01 2012-05-01 Semiconductor Components Industries, Llc Schottky diode and method therefor
US7781859B2 (en) * 2008-03-24 2010-08-24 Taiwan Semiconductor Manufacturing Company, Ltd. Schottky diode structures having deep wells for improving breakdown voltages
US8324705B2 (en) * 2008-05-27 2012-12-04 Taiwan Semiconductor Manufacturing Company, Ltd. Schottky diodes having low-voltage and high-concentration rings
US7915704B2 (en) * 2009-01-26 2011-03-29 Freescale Semiconductor, Inc. Schottky diode
US7972913B2 (en) * 2009-05-28 2011-07-05 Freescale Semiconductor, Inc. Method for forming a Schottky diode
CN102347373B (zh) * 2010-08-03 2013-04-17 旺宏电子股份有限公司 肖特基二极管
US8878329B2 (en) * 2010-09-17 2014-11-04 United Microelectronics Corp. High voltage device having Schottky diode
CN102842596B (zh) * 2011-06-22 2015-05-20 旺宏电子股份有限公司 半导体结构及其制造方法
JP6087520B2 (ja) * 2011-07-13 2017-03-01 キヤノン株式会社 ダイオード素子及び検出素子
US8592274B2 (en) * 2012-03-27 2013-11-26 Alpha And Omega Semiconductor Incorporated LDMOS with accumulation enhancement implant
EP3460856B1 (en) * 2017-09-26 2020-12-02 ams AG Schottky barrier diode with improved schottky contact for high voltages

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6050062B2 (ja) * 1982-03-19 1985-11-06 三菱電機株式会社 半導体集積回路装置
JPS5936264U (ja) * 1982-07-27 1984-03-07 サンケン電気株式会社 シヨツトキバリア半導体装置
JPS61296760A (ja) * 1985-06-26 1986-12-27 Hitachi Ltd 半導体装置
US4989058A (en) 1985-11-27 1991-01-29 North American Philips Corp. Fast switching lateral insulated gate transistors
US5614755A (en) 1993-04-30 1997-03-25 Texas Instruments Incorporated High voltage Shottky diode
US5483087A (en) 1994-07-08 1996-01-09 International Rectifier Corporation Bidirectional thyristor with MOS turn-off capability with a single gate
US5818084A (en) 1996-05-15 1998-10-06 Siliconix Incorporated Pseudo-Schottky diode
US6784489B1 (en) * 1997-03-28 2004-08-31 Stmicroelectronics, Inc. Method of operating a vertical DMOS transistor with schottky diode body structure
JP2001185740A (ja) * 1999-12-24 2001-07-06 Sanyo Electric Co Ltd 半導体装置とその製造方法
US6617642B1 (en) * 2000-02-23 2003-09-09 Tripath Technology, Inc. Field effect transistor structure for driving inductive loads
US6552406B1 (en) 2000-10-03 2003-04-22 International Business Machines Corporation SiGe transistor, varactor and p-i-n velocity saturated ballasting element for BiCMOS peripheral circuits and ESD networks
JP4097417B2 (ja) 2001-10-26 2008-06-11 株式会社ルネサステクノロジ 半導体装置
JP4277496B2 (ja) * 2001-11-21 2009-06-10 富士電機デバイステクノロジー株式会社 半導体装置

Also Published As

Publication number Publication date
KR20070026690A (ko) 2007-03-08
JP2008505487A (ja) 2008-02-21
US20060001057A1 (en) 2006-01-05
WO2006007143A3 (en) 2006-04-06
JP4975618B2 (ja) 2012-07-11
CN1977389A (zh) 2007-06-06
TW200614520A (en) 2006-05-01
WO2006007143A2 (en) 2006-01-19
CN100576569C (zh) 2009-12-30
US7355260B2 (en) 2008-04-08

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MM4A Annulment or lapse of patent due to non-payment of fees