KR20070026690A - 쇼트키 소자와 형성 방법 - Google Patents

쇼트키 소자와 형성 방법 Download PDF

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Publication number
KR20070026690A
KR20070026690A KR1020067027790A KR20067027790A KR20070026690A KR 20070026690 A KR20070026690 A KR 20070026690A KR 1020067027790 A KR1020067027790 A KR 1020067027790A KR 20067027790 A KR20067027790 A KR 20067027790A KR 20070026690 A KR20070026690 A KR 20070026690A
Authority
KR
South Korea
Prior art keywords
region
schottky
conductivity type
interleaved
conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020067027790A
Other languages
English (en)
Korean (ko)
Inventor
비쉬누 케이. 켐카
비자이 파르타사라티
롱화 주
아미타바 보세
Original Assignee
프리스케일 세미컨덕터, 인크.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 프리스케일 세미컨덕터, 인크. filed Critical 프리스케일 세미컨덕터, 인크.
Publication of KR20070026690A publication Critical patent/KR20070026690A/ko
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/051—Manufacture or treatment of Schottky diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 

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  • Electrodes Of Semiconductors (AREA)
KR1020067027790A 2004-06-30 2005-05-19 쇼트키 소자와 형성 방법 Withdrawn KR20070026690A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/881,678 US7355260B2 (en) 2004-06-30 2004-06-30 Schottky device and method of forming
US10/881,678 2004-06-30

Publications (1)

Publication Number Publication Date
KR20070026690A true KR20070026690A (ko) 2007-03-08

Family

ID=35512975

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020067027790A Withdrawn KR20070026690A (ko) 2004-06-30 2005-05-19 쇼트키 소자와 형성 방법

Country Status (6)

Country Link
US (1) US7355260B2 (enExample)
JP (1) JP4975618B2 (enExample)
KR (1) KR20070026690A (enExample)
CN (1) CN100576569C (enExample)
TW (1) TWI358835B (enExample)
WO (1) WO2006007143A2 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6704143B1 (en) 2000-10-23 2004-03-09 Adc Telecommunications, Inc. Method and apparatus for adjusting an optical element to achieve a precise length
US7550804B2 (en) * 2006-03-27 2009-06-23 Freescale Semiconductor, Inc. Semiconductor device and method for forming the same
US7777257B2 (en) * 2007-02-14 2010-08-17 Freescale Semiconductor, Inc. Bipolar Schottky diode and method
US8168466B2 (en) * 2007-06-01 2012-05-01 Semiconductor Components Industries, Llc Schottky diode and method therefor
US7781859B2 (en) * 2008-03-24 2010-08-24 Taiwan Semiconductor Manufacturing Company, Ltd. Schottky diode structures having deep wells for improving breakdown voltages
US8324705B2 (en) * 2008-05-27 2012-12-04 Taiwan Semiconductor Manufacturing Company, Ltd. Schottky diodes having low-voltage and high-concentration rings
US7915704B2 (en) * 2009-01-26 2011-03-29 Freescale Semiconductor, Inc. Schottky diode
US7972913B2 (en) * 2009-05-28 2011-07-05 Freescale Semiconductor, Inc. Method for forming a Schottky diode
CN102347373B (zh) * 2010-08-03 2013-04-17 旺宏电子股份有限公司 肖特基二极管
US8878329B2 (en) * 2010-09-17 2014-11-04 United Microelectronics Corp. High voltage device having Schottky diode
CN102842596B (zh) * 2011-06-22 2015-05-20 旺宏电子股份有限公司 半导体结构及其制造方法
JP6087520B2 (ja) * 2011-07-13 2017-03-01 キヤノン株式会社 ダイオード素子及び検出素子
US8592274B2 (en) * 2012-03-27 2013-11-26 Alpha And Omega Semiconductor Incorporated LDMOS with accumulation enhancement implant
EP3460856B1 (en) * 2017-09-26 2020-12-02 ams AG Schottky barrier diode with improved schottky contact for high voltages

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6050062B2 (ja) * 1982-03-19 1985-11-06 三菱電機株式会社 半導体集積回路装置
JPS5936264U (ja) * 1982-07-27 1984-03-07 サンケン電気株式会社 シヨツトキバリア半導体装置
JPS61296760A (ja) * 1985-06-26 1986-12-27 Hitachi Ltd 半導体装置
US4989058A (en) 1985-11-27 1991-01-29 North American Philips Corp. Fast switching lateral insulated gate transistors
US5614755A (en) 1993-04-30 1997-03-25 Texas Instruments Incorporated High voltage Shottky diode
US5483087A (en) 1994-07-08 1996-01-09 International Rectifier Corporation Bidirectional thyristor with MOS turn-off capability with a single gate
US5818084A (en) 1996-05-15 1998-10-06 Siliconix Incorporated Pseudo-Schottky diode
US6784489B1 (en) * 1997-03-28 2004-08-31 Stmicroelectronics, Inc. Method of operating a vertical DMOS transistor with schottky diode body structure
JP2001185740A (ja) * 1999-12-24 2001-07-06 Sanyo Electric Co Ltd 半導体装置とその製造方法
US6617642B1 (en) * 2000-02-23 2003-09-09 Tripath Technology, Inc. Field effect transistor structure for driving inductive loads
US6552406B1 (en) 2000-10-03 2003-04-22 International Business Machines Corporation SiGe transistor, varactor and p-i-n velocity saturated ballasting element for BiCMOS peripheral circuits and ESD networks
JP4097417B2 (ja) 2001-10-26 2008-06-11 株式会社ルネサステクノロジ 半導体装置
JP4277496B2 (ja) * 2001-11-21 2009-06-10 富士電機デバイステクノロジー株式会社 半導体装置

Also Published As

Publication number Publication date
CN100576569C (zh) 2009-12-30
TWI358835B (en) 2012-02-21
CN1977389A (zh) 2007-06-06
WO2006007143A2 (en) 2006-01-19
WO2006007143A3 (en) 2006-04-06
US7355260B2 (en) 2008-04-08
JP2008505487A (ja) 2008-02-21
JP4975618B2 (ja) 2012-07-11
US20060001057A1 (en) 2006-01-05
TW200614520A (en) 2006-05-01

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Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20061229

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid